JPS572586A - Modulator using laser diode - Google Patents

Modulator using laser diode

Info

Publication number
JPS572586A
JPS572586A JP7542680A JP7542680A JPS572586A JP S572586 A JPS572586 A JP S572586A JP 7542680 A JP7542680 A JP 7542680A JP 7542680 A JP7542680 A JP 7542680A JP S572586 A JPS572586 A JP S572586A
Authority
JP
Japan
Prior art keywords
waveguide
laser diode
modulator
disposed
30ghz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7542680A
Other languages
Japanese (ja)
Other versions
JPS6161558B2 (en
Inventor
Shigefumi Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7542680A priority Critical patent/JPS572586A/en
Publication of JPS572586A publication Critical patent/JPS572586A/en
Publication of JPS6161558B2 publication Critical patent/JPS6161558B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the modulation up to approx. 30GHz with a modulator using a laser diode by enclosing a part led to the exterior of a waveguide of a metallic rod extending to contact with the laser diode disposed at specific position at the center of the waveguide with a radial filter. CONSTITUTION:A laser diode 33 is disposed at the position isolated at 1/4 wavelength of modulated wave from a terminating shortcircuit plate 31 at the center of a waveguide 24. The other end of the metallic rod 21 extending to contact with the diode is let to the exterior of the waveguide, and the periphery is enclosed with a radial filter 22. A light machting unit 32 is disposed to confront the duide 33. Thus, a modulator capable of effectively modulating the light output within the frequency range of several GHz to 30GHz can be obtained.
JP7542680A 1980-06-06 1980-06-06 Modulator using laser diode Granted JPS572586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7542680A JPS572586A (en) 1980-06-06 1980-06-06 Modulator using laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7542680A JPS572586A (en) 1980-06-06 1980-06-06 Modulator using laser diode

Publications (2)

Publication Number Publication Date
JPS572586A true JPS572586A (en) 1982-01-07
JPS6161558B2 JPS6161558B2 (en) 1986-12-26

Family

ID=13575863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7542680A Granted JPS572586A (en) 1980-06-06 1980-06-06 Modulator using laser diode

Country Status (1)

Country Link
JP (1) JPS572586A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010257949A (en) * 2009-03-31 2010-11-11 Ngk Spark Plug Co Ltd Plasma jet ignition plug
US8033273B2 (en) 2007-07-02 2011-10-11 Denso Corporation Plasma ignition system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8033273B2 (en) 2007-07-02 2011-10-11 Denso Corporation Plasma ignition system
JP2010257949A (en) * 2009-03-31 2010-11-11 Ngk Spark Plug Co Ltd Plasma jet ignition plug

Also Published As

Publication number Publication date
JPS6161558B2 (en) 1986-12-26

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