JPS5763882A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5763882A
JPS5763882A JP13959480A JP13959480A JPS5763882A JP S5763882 A JPS5763882 A JP S5763882A JP 13959480 A JP13959480 A JP 13959480A JP 13959480 A JP13959480 A JP 13959480A JP S5763882 A JPS5763882 A JP S5763882A
Authority
JP
Japan
Prior art keywords
type
layer
mesa
type inp
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13959480A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13959480A priority Critical patent/JPS5763882A/en
Publication of JPS5763882A publication Critical patent/JPS5763882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent increase of reactive current during high-temperarure operation, by forming a mesa section, which contains an active layer and has a P-N junction, on a substrate for growth which is provided with a current-narrowing diffusion layer, and then by filling the mesa section with a surrounding region. CONSTITUTION:An N type InGaAsP layer 12 and an N type InP layer are formed on an N type InP substrate 11, and after a P type region 15 is formed by removing a stripe section on the center and diffusing Cd, etc., the InP layer on the top is removed, and an N type InP 16, an N type InGaASP active layer 17 and a P type InP layer 18 are made to grow in turn, the layers 16-18 are mesa etched with SiO2 as a mask, this mesa section is surrounded by an N type InP layer 19, P type impurities are diffused from the top surface, a P type diffusion layer 20 is formed, and eledtrodes 21 and 22 are formed. It is possible, by doing so, to prevent reactive current from increasing during high-temperature operation and also to expand the range of operating temperature of a flush type semiconductor laser.
JP13959480A 1980-10-06 1980-10-06 Manufacture of semiconductor laser Pending JPS5763882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13959480A JPS5763882A (en) 1980-10-06 1980-10-06 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13959480A JPS5763882A (en) 1980-10-06 1980-10-06 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5763882A true JPS5763882A (en) 1982-04-17

Family

ID=15248898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13959480A Pending JPS5763882A (en) 1980-10-06 1980-10-06 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5763882A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200783A (en) * 1986-02-28 1987-09-04 Hitachi Ltd semiconductor equipment
EP0185854A3 (en) * 1984-09-26 1987-09-23 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
EP0610777A1 (en) * 1993-02-12 1994-08-17 ALCATEL ITALIA S.p.A. Semiconductor laser with low threshold current and related manufacturing process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0185854A3 (en) * 1984-09-26 1987-09-23 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
JPS62200783A (en) * 1986-02-28 1987-09-04 Hitachi Ltd semiconductor equipment
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
EP0610777A1 (en) * 1993-02-12 1994-08-17 ALCATEL ITALIA S.p.A. Semiconductor laser with low threshold current and related manufacturing process
US5504769A (en) * 1993-02-12 1996-04-02 Alcatel Italia S.P.A. Semiconductor laser having low current threshold

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