JPS5778166A - Silicon gate c-mos integrated circuit - Google Patents

Silicon gate c-mos integrated circuit

Info

Publication number
JPS5778166A
JPS5778166A JP55153521A JP15352180A JPS5778166A JP S5778166 A JPS5778166 A JP S5778166A JP 55153521 A JP55153521 A JP 55153521A JP 15352180 A JP15352180 A JP 15352180A JP S5778166 A JPS5778166 A JP S5778166A
Authority
JP
Japan
Prior art keywords
ions
region
injected
polycrystalline
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153521A
Other languages
Japanese (ja)
Inventor
Yasuhiko Nishikubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP55153521A priority Critical patent/JPS5778166A/en
Publication of JPS5778166A publication Critical patent/JPS5778166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the productivity of an Si-gate C-MOSIC having a main wire including bus line made of polycrystalline Si by simultaneously converting the polycrystalline Si in N type when injecting phosphorus ions to diffuse gate, source and drain in the IC. CONSTITUTION:Rightward rising oblique lines L1-L3, G1-G6 are polycrystalline Si, rightward lowering oblique line region 42 is a region injected with N<+> ions, and the other region 43 is a region injected with P<+> ions. Transistor group 501 of the region 43 is P-channel transistor, P<+> ions are injected to the sources and drains SD4, SD5, SD6, P<+> ions are simultaneously injected in polycrystalline Si G1-G3, and silicon gates and wires subsequent thereto are formed. When N<+> ions are injected to the source and drain SD1-SD3 of the N-channel transistor of the region 42, N<+> ions are simultaneously injected in polycrystalline Si G4-G6, silicon gate and wire subsequent thereto and wires as bus lines are formed.
JP55153521A 1980-10-31 1980-10-31 Silicon gate c-mos integrated circuit Pending JPS5778166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153521A JPS5778166A (en) 1980-10-31 1980-10-31 Silicon gate c-mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153521A JPS5778166A (en) 1980-10-31 1980-10-31 Silicon gate c-mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5778166A true JPS5778166A (en) 1982-05-15

Family

ID=15564347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153521A Pending JPS5778166A (en) 1980-10-31 1980-10-31 Silicon gate c-mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5778166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0389958U (en) * 1989-12-28 1991-09-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0389958U (en) * 1989-12-28 1991-09-12

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