JPS5788100A - Etching method for quartz substrate - Google Patents
Etching method for quartz substrateInfo
- Publication number
- JPS5788100A JPS5788100A JP16326580A JP16326580A JPS5788100A JP S5788100 A JPS5788100 A JP S5788100A JP 16326580 A JP16326580 A JP 16326580A JP 16326580 A JP16326580 A JP 16326580A JP S5788100 A JPS5788100 A JP S5788100A
- Authority
- JP
- Japan
- Prior art keywords
- quartz substrate
- etching method
- film
- reactive
- resist material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- 239000010453 quartz Substances 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 5
- 238000005530 etching Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- -1 carbon halide Chemical class 0.000 abstract 1
- JOHCVVJGGSABQY-UHFFFAOYSA-N carbon tetraiodide Chemical compound IC(I)(I)I JOHCVVJGGSABQY-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To provide selectivity and to enable the multiple working of a quartz substrate by specifying a resist material and a reactive gas in a reactive dry etching method for the substrate.
CONSTITUTION: When a quartz substrate is etched by a reactive ion beam etching method or a reactive RF sputter etching method, a thin Ti film is used as a resist material, and CF4 as a principal component is mixed with CCl4, CBr4 or CI4 as a gaseous additive and used as a reactive gas. The Ti film has superior selectivity to the quartz substrate and is applicable to all of said methods. The etching speed ratio of the quartz substrate to the Ti film, that is, the selection ratio is enhanced by adding such carbon halide to gaseous CF4. The reason is unknown, yet it is considered that the added gas is decomposed more easily on the surface of the Ti film in plasma than CF4 and protects the interior.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16326580A JPS5788100A (en) | 1980-11-21 | 1980-11-21 | Etching method for quartz substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16326580A JPS5788100A (en) | 1980-11-21 | 1980-11-21 | Etching method for quartz substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5788100A true JPS5788100A (en) | 1982-06-01 |
Family
ID=15770513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16326580A Pending JPS5788100A (en) | 1980-11-21 | 1980-11-21 | Etching method for quartz substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5788100A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951531A (en) * | 1982-09-18 | 1984-03-26 | Ulvac Corp | Dry etching method |
| WO1996039710A3 (en) * | 1995-05-30 | 1997-04-17 | Motorola Inc | Method for etching photolithographically produced quartz crystal blanks for singulation |
-
1980
- 1980-11-21 JP JP16326580A patent/JPS5788100A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951531A (en) * | 1982-09-18 | 1984-03-26 | Ulvac Corp | Dry etching method |
| WO1996039710A3 (en) * | 1995-05-30 | 1997-04-17 | Motorola Inc | Method for etching photolithographically produced quartz crystal blanks for singulation |
| US5650075A (en) * | 1995-05-30 | 1997-07-22 | Motorola, Inc. | Method for etching photolithographically produced quartz crystal blanks for singulation |
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