JPS58200527A - Preparation of compound semiconductor thin film - Google Patents
Preparation of compound semiconductor thin filmInfo
- Publication number
- JPS58200527A JPS58200527A JP57082478A JP8247882A JPS58200527A JP S58200527 A JPS58200527 A JP S58200527A JP 57082478 A JP57082478 A JP 57082478A JP 8247882 A JP8247882 A JP 8247882A JP S58200527 A JPS58200527 A JP S58200527A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flow rate
- carrier gas
- impurity
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は化合物半導体薄膜の製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a compound semiconductor thin film.
ＧａＡｓ、ＡＬＡｓなどの化合物半導体薄膜のエピタキ
シャル成長法としては、気相成長法、液相成長法および
固相成長法などがある。その中でも気相成長法の一技術
としての有機金属熱分解法は、原料物質軸−送律速で°
組成および成長速度の制御が可能であること、非可逆反
応であり基板のエッチ作用の悪影響がないことなどの基
本的な特徴を持っており、光半導体デバイス、化合物半
導体超高周波・超高速デバイスのための基幹技術として
最近非常に注目されている。しかし、有機金属の熱分解
反応、成長反応の理論が未整備であり、不明瞭な事象が
多く、特に不純物濃度分布の高性能制御を必要とするエ
ピタキシャル層を実現するための成長工程の確立が大き
な課題となっている。Epitaxial growth methods for compound semiconductor thin films such as GaAs and ALAs include vapor phase growth, liquid phase growth, and solid phase growth. Among them, organometallic pyrolysis, which is one of the techniques for vapor phase growth, is based on the material axis - feeding rate.
It has basic characteristics such as being able to control the composition and growth rate, and being an irreversible reaction without the adverse effects of etching on the substrate. Recently, it has been attracting a lot of attention as a core technology for However, the theory of thermal decomposition reactions and growth reactions of organic metals is not yet developed, and many phenomena are unclear.In particular, it is difficult to establish a growth process to realize epitaxial layers that require high-performance control of impurity concentration distribution. This has become a major issue.
従来の有機金属熱分解法によるエピタキシャル成長法に
おいては、たとえば■−■族化合物半導体の場合、■族
元素成分がＧａ（ＣＨａ）ｓ 、 ＡＡ（ＣＩＥ（ｓ）
ｓなどの有機金属ガスで供給される一方、Ｖ族元素成分
がＡａＩ（ａ 、 ＰＨｓなとの水素化物ガスで供給さ
れ、さらに不純物添加用元素は、たとえばｎ形の場合、
Ｈ！Ｓｓガスで供給される。そして、これらのガスが一
定量の為キャリヤガスとともに反応管に送られることに
より、反応管内で所定の温度に設定された結晶基板上に
エピタキシャル成長がなされる。In the conventional epitaxial growth method using organometallic pyrolysis, for example, in the case of a ■-■ group compound semiconductor, the group ■ element component is Ga(CHa)s, AA(CIE(s)
The group V element component is supplied as an organometallic gas such as S, while the V group element component is supplied as a hydride gas such as AaI (a), PHs, and the impurity addition element is, for example, n-type.
H! Supplied with Ss gas. Then, by sending a certain amount of these gases together with a carrier gas to a reaction tube, epitaxial growth is performed on a crystal substrate set at a predetermined temperature within the reaction tube.
この時、成長層の不純物濃度の制御は、不純物添加用ガ
スの供給量のみを変化させ、他のすべてのガスの流量は
一定に保ったままで実施される。At this time, the impurity concentration of the growth layer is controlled by changing only the supply amount of the impurity addition gas while keeping the flow rates of all other gases constant.
しかるに、不純物添加用ガスの供給量のみを変化させて
成長層の不純物濃度の制御を行う従来の方法においては
、不純物濃度分布の厚さ方向の勾配の制御性が悪いとい
う欠点があった。However, in the conventional method of controlling the impurity concentration of the grown layer by changing only the supply amount of the impurity doping gas, there is a drawback that the gradient of the impurity concentration distribution in the thickness direction is poorly controllable.
すなわち、エピタキシャル成長層の不純物濃度としてＩ
ＱＩｍ〜１０１１Ａ−Ｉｆを得るための不純物添加用ガ
スの流量は、通常他のガス流量と比較して非常に少なく
、したがって、不純物添加用ガス配管系内でのガス流の
輸送時間および経時変化から、反応管内への急激なガス
流量の変化の制御には限界がある。また、エピタキシャ
ル成長層の不純物濃度が不純物添加用ガスの流量に近位
的に比例するため、１０ｔｓ〜１０１Ｓ〆ｆの範囲内の
広い不純物濃度勾配にわたって連続的おるいは段階的に
所定の濃度分布を得るためには相応した広い範囲にわた
って不純物添加用ガスの流量制御が必要であるが、この
制御に、装置の制約から眼界がある。これらによシ、従
゛来の方法では、不純物濃度分布の厚さ方向の勾配の制
御性に限界があシ悪かった。そして、このような不純物
濃度の制御性の限界は、すなわち実現可能なエピタキシ
ャル成長層の性能限界ともなり、近年化合物半導体デバ
イスの高性能化のために要求されている最適不純物分布
の設定を達成できない重大な障害となっている。That is, as the impurity concentration of the epitaxial growth layer, I
The flow rate of the impurity doping gas to obtain QIm ~ 1011A-If is usually very small compared to other gas flow rates, and therefore, the transport time and aging of the gas flow within the impurity gas piping system However, there are limits to the control of sudden changes in the gas flow rate into the reaction tube. Furthermore, since the impurity concentration of the epitaxially grown layer is proximately proportional to the flow rate of the impurity doping gas, a predetermined concentration distribution can be created continuously or stepwise over a wide impurity concentration gradient within the range of 10ts to 101S〆f. In order to obtain this, it is necessary to control the flow rate of the impurity-adding gas over a correspondingly wide range, but there is a limit to this control due to equipment limitations. For these reasons, conventional methods have poor controllability of the gradient of impurity concentration distribution in the thickness direction. This limit in the controllability of the impurity concentration also becomes the performance limit of the epitaxial growth layer that can be realized, and is a serious problem that prevents the setting of the optimum impurity distribution, which has been required in recent years to improve the performance of compound semiconductor devices. It has become a major obstacle.
この発明は上記の点に鑑みなされたもので、エピタキシ
ャル成長層の不純物濃度分布の厚さ方向の勾配の制御性
が良好な化合物半導体薄膜の製造方法を提供することを
目的とす゛る。The present invention has been made in view of the above points, and it is an object of the present invention to provide a method for manufacturing a compound semiconductor thin film in which the gradient in the thickness direction of the impurity concentration distribution of an epitaxially grown layer can be easily controlled.
以下この発明の実施例を第１図を参照して説明する。第
１図において、１は反応管、２はその中に設けられた基
板支持台、３は反応管１の外周に設けられた高周波誘導
加熱コイル、４は基板支持台２上に保持され九〇ａＡｓ
基板である。また、５はＧａ（ＣＨｓ）ｓを入れたバブ
ラ２０にキャリヤガスとしてＨ，ガスを流量調整器１０
およびガス弁１５を介して送るためのルガス流入口、６
はＨ２で希釈されたＡｓ１ａガスの流入口、７．９は第
１．第２のキャリヤガスとしてのＨ２ガスの流入口、８
は迅で希釈されたＨ、Ｓｅガス（不純物添加用ガス）の
流入口である。そして、流入口６〜９の各ガスは流量調
整器１１〜１４およびガス弁１６゛〜１９を介して反応
管１に送られるようになっている。ま九、反応管１には
、バプラ２０内のＧａ（ＣＨｓ）ｍガスがガス弁１５′
を介して供給されるようにもなっている。An embodiment of the present invention will be described below with reference to FIG. In FIG. 1, 1 is a reaction tube, 2 is a substrate support provided therein, 3 is a high-frequency induction heating coil provided around the outer periphery of the reaction tube 1, and 4 is a substrate held on the substrate support 2. aAs
It is a board. In addition, 5 is a bubbler 20 containing Ga(CHs)s, H as a carrier gas, and a flow rate regulator 10 of the gas.
and a gas inlet for feeding through the gas valve 15, 6
is the inlet of As1a gas diluted with H2, and 7.9 is the first inlet. inlet for H2 gas as a second carrier gas, 8
is an inlet for quickly diluted H, Se gas (impurity addition gas). The gases from the inlets 6 to 9 are sent to the reaction tube 1 via flow rate regulators 11 to 14 and gas valves 16 to 19. Nine, the Ga(CHs)m gas in the bubbler 20 is connected to the reaction tube 1 through the gas valve 15'.
It is also now supplied via.
２１は反応管１に接続された排ガス口である。21 is an exhaust gas port connected to the reaction tube 1.
さて、エピタキシャル成長を行う場合は、まず、その紡
段階として次のことを行う。すなわち、基板支持台２に
ＧａＡｓ基板４を装着し九後、流入ロアー流量調整器１
２−ガス弁１７のガス系から所定の流量の第１のキャリ
ヤガス（迅ガス）を反応管１に供給し、さらに高周波誘
導によりＧａＡ’ｓ基板４を加熱し、基板温度がはソ４
００℃に達した時点で流入口６−流量調整器１１−ガス
弁１６のガス系から所定の流量のＡｓＨ３ガス流を反応
管１に加え、基板温度を所定の温度たとえば６２５℃に
設定し、一定時間この温度に保持する。Now, when performing epitaxial growth, first, the following steps are performed as the spinning step. That is, after mounting the GaAs substrate 4 on the substrate support 2, the inflow lower flow rate regulator 1
2- A predetermined flow rate of the first carrier gas (fast gas) is supplied from the gas system of the gas valve 17 to the reaction tube 1, and the GaA's substrate 4 is further heated by high frequency induction until the temperature of the substrate increases.
When the temperature reaches 00°C, a predetermined flow rate of AsH3 gas is added to the reaction tube 1 from the gas system of the inlet 6, the flow rate regulator 11, and the gas valve 16, and the substrate temperature is set to a predetermined temperature, for example, 625°C. Hold at this temperature for a certain period of time.
しかる後、流入口５−流量調整器１０−ガス弁１５−°
ガス弁１５′のガス系から所定の流量のＧａ（ＣＨａ）
ｓガス流を反応管１に加えることにより、ＧａＡｓ基板
４上へのエピタキシャル成長が開始される。この時、エ
ピタキシャル成長層に対する不純物添加は流入口８−流
量調整器１３−ガス弁１８のガス系からＨ，Ｓｅガス流
を反応管１に加えることに二になされるが、エピタキシ
ャル成長層の厚み方向に所望の不純物濃度勾配を形成す
るために、次のような二種類のガス制御方式が実施され
る。After that, the inlet 5-flow regulator 10-gas valve 15-°
Ga (CHa) at a predetermined flow rate from the gas system of the gas valve 15'
Epitaxial growth onto the GaAs substrate 4 is initiated by adding a flow of s gas to the reaction tube 1. At this time, impurities are added to the epitaxially grown layer by adding a H, Se gas flow to the reaction tube 1 from the gas system of the inlet 8 - flow rate regulator 13 - gas valve 18. In order to form the desired impurity concentration gradient, two types of gas control schemes are implemented as follows.
第１の制御方式では、Ｇａ （ＣＨｓ ＞ｓ ＋ Ａｓ
Ｈａの原料ガス流量および不純物添加用ガスＨ，Ｓｅ
の流量を一定に保った状態で、迅キャリヤガスの流量の
みを連続的あるいは段階的に変化させる。Ｈ，キャリヤ
ガスの流ゝ率制御は、流入ロアー流量調整器１２−ガス
弁１７の第１のキャリヤガス流系の調整で、まえは第１
のキャリヤガス流系は一定に保った状態で流入口９−流
量調整器１４−ガス弁１９の第２のキャリヤガス流系の
調整で実施される。In the first control method, Ga (CHs >s + As
Ha raw material gas flow rate and impurity addition gas H, Se
While the flow rate of the carrier gas is kept constant, only the flow rate of the carrier gas is changed continuously or stepwise. H. Carrier gas flow rate control is the adjustment of the first carrier gas flow system of the inflow lower flow rate regulator 12-gas valve 17.
This is carried out by regulating the second carrier gas flow system of the inlet 9 - flow regulator 14 - gas valve 19, with the carrier gas flow system kept constant.
第２の制御方式では、Ｇａ（Ｃ）Ｉ３）、 ｌ Ａ８Ｈ
３の原料ガス流量を一定に保った状態で、不純物添加用
ガスＨ，ｓｅの流量とＨ，キャリヤガスの流量とを連続
的あるいは段階的に変化させる。Ｈ，Ｓ・ガス流量の調
整は、流入口８−流量調整器１３−ガス弁１８のＨｏ５
ｅガス系の調整に実施される。Ｈ，キャリヤガスの流量
調整は、第１の制御方式の場合と同様に、第１あるいは
第２のキャリヤガス流系の調整により実施される。In the second control method, Ga(C)I3), l A8H
The flow rates of the impurity addition gases H and se and the flow rates of H and the carrier gas are varied continuously or stepwise while the flow rate of the raw material gas No. 3 is kept constant. Adjustment of the H, S gas flow rate is done through the inlet 8 - flow rate regulator 13 - gas valve 18 Ho5.
Performed to adjust the e-gas system. Adjustment of the flow rate of the carrier gas is carried out by adjusting the first or second carrier gas flow system, as in the case of the first control method.
以上の実施例から明らかなように、この発明の方法では
、Ｈ７をキャリヤガス、Ｇａ（ＣＨ３）３などの有機金
属ガスとＡｓｈｓなどの水素化物ガスを原料ガス、［、
Ｓｅなどを不純物添加用ガスとする有機金属熱分解ＣＶ
Ｄ法によるエピタキシャル成長工程において、Ｈｔキャ
リヤガスの流量または山キャリヤガスと不純物添加用ガ
スの流量を連続的あるいは段階的に変化させることによ
り、エピタキシャル成長層の厚さ方向の不純物分布を連
続的あるいは段階的に変化させるものである。か＼るこ
の発明の方法は、次のような基本原理による。As is clear from the above examples, in the method of the present invention, H7 is used as a carrier gas, an organometallic gas such as Ga(CH3)3, and a hydride gas such as Ashs are used as source gases [,
Organometallic pyrolysis CV using Se etc. as impurity addition gas
In the epitaxial growth process using the D method, the impurity distribution in the thickness direction of the epitaxially grown layer can be changed continuously or stepwise by changing the flow rate of Ht carrier gas or the flow rates of mountain carrier gas and impurity addition gas continuously or stepwise. It changes the The method of this invention is based on the following basic principle.
第２図は、−３℃に保持されたＧａ（ＣＨｓ）ａノ（プ
ラヘの迅ガス流量をＩＱ −／ｍｉｎ 、 Ｈａで濃度
５チに希釈されたＡｓ迅ガス流量を８０４ｍＩｎ 、
Ｈｌで濃度５０ｐｐｍに希釈され九Ｈｅ Ｓ ｅガス流
量を５ ｄ／ｍｉｎ 、成長温度を６２５℃に設定した
場合について、Ｈ，キャリヤガス流量と成長層の不純物
濃度との関係を示す実験結果の一例である。Figure 2 shows the flow rate of Ga(CHs) ano(Prahe) held at -3°C at IQ -/min, the flow rate of As gas diluted with Ha to a concentration of 5T at 804 mIn,
An example of experimental results showing the relationship between H, carrier gas flow rate and impurity concentration in the growth layer when the HeSe gas flow rate was set at 5 d/min and the growth temperature was set at 625°C. It is.
有機金属熱分解ＣＶＤ法によるエピタキシャル成長にお
いては、成長層の不純物濃度が不純物添加用ガスすなわ
ちＨ，Ｓｅガスの流量に近似的に比例する性質があり、
これは公知の事実である。しかしながら、第２図の実験
結果によれば、成長層の不純物濃度は鴇キャリヤガス流
量に大きく依存しており、たとえばＨ１流量をＸｔ１分
から２１７分に変化させると成長層不純物濃度は約４．
５倍増加する。In epitaxial growth by metalorganic pyrolysis CVD, there is a property that the impurity concentration of the grown layer is approximately proportional to the flow rate of the impurity doping gas, that is, H, Se gas.
This is a known fact. However, according to the experimental results shown in FIG. 2, the impurity concentration in the growth layer is largely dependent on the carrier gas flow rate; for example, when the H1 flow rate is changed from Xt1 to 217 minutes, the growth layer impurity concentration is approximately 4.
Increase by 5 times.
か＼る成長層不純物濃度に対するＨ、キャリヤガス流量
の強い依存性は従来全く未発見の新事実であり、この発
明の方法は、この新事実の発見に立脚するものである。The strong dependence of H and carrier gas flow rates on the impurity concentration in the growth layer is a new fact that has not been discovered in the past, and the method of the present invention is based on the discovery of this new fact.
そして、成長層の不純物濃度制御の手段として迅キャリ
ヤガスの流量制御を行うこの発明の方法によれば次のよ
うな効果を有する。まず、通常のガス流量調整器の精度
のよい調整範囲は１桁の範囲内であり、不純物濃度と比
例関係にある不純物添加用ガスの流量調整による従来の
方法では不純物濃度分布の設定に限界があるが、この発
明によれば、第２図の実験結果で詳述したような成長層
不純物濃度に対する山流量の非常に強い依存性のために
、段階的あるいは連続的な広範囲にわたる不純物濃度分
布の制御が可能となる。また、不純物添加用ガスの流量
はルキャリャガスの流量と比較して非常に微量であり、
か＼る微量ガスの場合は、精密流量制御が比較的困難で
あることに加えて、ガス配管内の伝搬時間が長くなシガ
ス流量の過渡応答性が非常に悪く、急峻な不純物濃度分
布の実現が困難であるが、この発明では、流量が大きく
過渡応答性のよいＨ２キャリヤガス流を制御することに
よシ、従来不可能であった極めて急峻な不純物濃度分布
を実現でき、しかし濃度分布を高精度に制御できる。こ
のように、この発明によれば、エピタキシャル成長層の
不純物濃度分布の厚さ方向の勾配の制御性が極めて良好
になる。The method of the present invention, which controls the flow rate of a fast carrier gas as a means of controlling the impurity concentration of the grown layer, has the following effects. First, the accurate adjustment range of a normal gas flow regulator is within a single digit range, and the conventional method of adjusting the flow rate of impurity addition gas, which is proportional to the impurity concentration, has a limit in setting the impurity concentration distribution. However, according to the present invention, due to the very strong dependence of the mountain flow rate on the impurity concentration in the growth layer as detailed in the experimental results shown in FIG. Control becomes possible. In addition, the flow rate of the impurity addition gas is very small compared to the flow rate of the Lucky gas.
In the case of such trace gases, not only is it relatively difficult to precisely control the flow rate, but also the transient response of the gas flow rate is very poor due to the long propagation time in the gas pipe, making it difficult to realize a steep impurity concentration distribution. However, in this invention, by controlling the H2 carrier gas flow with a large flow rate and good transient response, it is possible to achieve an extremely steep impurity concentration distribution that was previously impossible. Can be controlled with high precision. As described above, according to the present invention, the controllability of the gradient of the impurity concentration distribution in the thickness direction of the epitaxially grown layer is extremely good.
第１図はこの発明の化合物半導体薄膜の製造方法の実施
例を説明するための構成図、第２図はＨ。
キャリヤガス流量と成長層の不純物濃度との関係を示す
特性図である。
１・・・反応管、２・・・基板支持台、３・・・高周波
誘導加熱コイル、４・・・ＧａＡｓ基板、５〜９・・・
各ガスの流入口、５〜１４・・・流量調整器、１５．１
５’、１６〜１９・・・ガス弁、２０・・・バブラ、２
１・・・排ガス口。
牙１図
才２図
Ｈ２埒ヤ・ツヤか°スｊ庇量（Ｚ／ｍ１ｎ）手続補正書
昭和５７年９月３Ｆ
特許庁長官着杉和夫 殿
１、事件の表示
昭和ｓ７年轡 許 願第 ８２４７８２、発＠Ｏ名称
化合物半導体薄属の親造方法
３、補正をする者
事件との関係 譬 許 出願人＜ｏｎｅ＞沖
電気工業株式会社
４、代理人
５、補正命令の日付 昭和 年 月 日（自発
）する。FIG. 1 is a block diagram for explaining an embodiment of the compound semiconductor thin film manufacturing method of the present invention, and FIG. 2 is a diagram H. FIG. 2 is a characteristic diagram showing the relationship between carrier gas flow rate and impurity concentration of a growth layer. DESCRIPTION OF SYMBOLS 1... Reaction tube, 2... Substrate support stand, 3... High frequency induction heating coil, 4... GaAs substrate, 5-9...
Inlet for each gas, 5 to 14...Flow rate regulator, 15.1
5', 16-19...Gas valve, 20...Bubbler, 2
1...Exhaust gas port. Fang 1 Diagram 2 Diagram H2 埒Ya/Shinka°Sj Eaves Amount (Z/m1n) Procedural Amendment September 1980 3F Director General of the Patent Office Kazuo Chikusugi 1, Indication of the Case 1952 轻语 No. 824782, Originated from @ O Name Compound Semiconductor Thin Metal Manufacturing Method 3, Relationship with the case of the person making the amendments Applicant <one> Oki Electric Industry Co., Ltd. 4, Agent 5, Date of amendment order Showa year, month, day (spontaneously) do it.
Claims (1)
からなる原料ガスさらには不純物添加用ガスを用いて行
われる有機金属熱分解ＣＶＤによるエピタキシャル成長
工程において、迅キャリヤガスの流量またはＨ，キャリ
ヤガスと不純−添加用ガスの流量を連続的あるいは段階
的に変化させることにより、エピタキシャル成長法の厚
さ方向の不純物濃度分布を連続的、あるいは段階的に変
化させるようにしたことを特徴とする化合物半導体薄膜
の製造方法。In the epitaxial growth process by organometallic pyrolysis CVD, which is carried out using a carrier gas consisting of a hydride gas, a source gas consisting of an organometallic gas and a hydride gas, and an impurity addition gas, the flow rate of the carrier gas or H, the carrier gas and impurities are - A compound semiconductor thin film characterized in that the impurity concentration distribution in the thickness direction of the epitaxial growth method is changed continuously or stepwise by changing the flow rate of the additive gas continuously or stepwise. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57082478A JPS58200527A (en) | 1982-05-18 | 1982-05-18 | Preparation of compound semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57082478A JPS58200527A (en) | 1982-05-18 | 1982-05-18 | Preparation of compound semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58200527A true JPS58200527A (en) | 1983-11-22 |
Family
ID=13775614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57082478A Pending JPS58200527A (en) | 1982-05-18 | 1982-05-18 | Preparation of compound semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58200527A (en) |
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| JP2002118287A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Gallium nitride based compound semiconductor |
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| US6472689B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Light emitting device |
| US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
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-
1982
- 1982-05-18 JP JP57082478A patent/JPS58200527A/en active Pending
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|---|---|---|---|---|
| US6472689B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Light emitting device |
| US6984536B2 (en) | 1990-02-28 | 2006-01-10 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
| US6472690B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Gallium nitride group compound semiconductor |
| JP2000091640A (en) * | 1999-10-05 | 2000-03-31 | Toyoda Gosei Co Ltd | Method of manufacturing gallium nitride based compound semiconductor light emitting device |
| JP2000091633A (en) * | 1999-10-05 | 2000-03-31 | Toyoda Gosei Co Ltd | Gallium nitride based compound semiconductor |
| JP2001185499A (en) * | 2000-10-16 | 2001-07-06 | Toyoda Gosei Co Ltd | Method for manufacturing gallium nitride-based compound semiconductor |
| JP2001168389A (en) * | 2000-10-16 | 2001-06-22 | Toyoda Gosei Co Ltd | Method of manufacturing gallium nitride based compound semiconductor light emitting device |
| JP2001168048A (en) * | 2000-10-16 | 2001-06-22 | Toyoda Gosei Co Ltd | Manufacturing method of gallium nitride semiconductor |
| JP2002118284A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Manufacturing method of gallium nitride semiconductor |
| JP2002118286A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Gallium nitride based compound semiconductor light emitting device |
| JP2002118285A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Manufacturing method of gallium nitride semiconductor |
| JP2002118287A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Gallium nitride based compound semiconductor |
| JP2002118283A (en) * | 2001-08-06 | 2002-04-19 | Toyoda Gosei Co Ltd | Manufacturing method of gallium nitride semiconductor |
| US20110052794A1 (en) * | 2008-05-12 | 2011-03-03 | Shin-Etsu Handotai Co., Ltd. | Vapor-phase growth apparatus and thin-film vapor-phase growth method |
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