JPS582045A - Wiring method - Google Patents
Wiring methodInfo
- Publication number
- JPS582045A JPS582045A JP10081181A JP10081181A JPS582045A JP S582045 A JPS582045 A JP S582045A JP 10081181 A JP10081181 A JP 10081181A JP 10081181 A JP10081181 A JP 10081181A JP S582045 A JPS582045 A JP S582045A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- contact
- substrate
- metal
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010953 base metal Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 241001092070 Eriobotrya Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
“ 不発明は來積回路の多ノー配線方沃ｖｃ関し、持
にＡｌ との′−気的接触ｔ４る方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a multi-node wiring method for an integrated circuit, and particularly to a method for making gaseous contact with Al.
Ａ１は、Ａｕに次ぐ！電導体であり、砿細〃ロエ性もよ
く、責価であるために、半導体や集積回路などの配線金
属として用いられる。Ａｔは菟気中の水分や水を用いた
処理などにより表面に数十ｎｍのアルミナ層が生じ、ア
ルミナは不導体のため、貧４ｔただ接触させただけでは
媛触抵抗が大きく、金属を擦り付けΦなり欠きψトｔな
りしてアルミナ層を破るようにし、ｉいと、嫉触砥に／
Ｌを小さくすることはできない。貞積１ｇｌ路において
は、接触部分が１００μｍ角以上と大きいときは、Ｏｒ
、Ｔｉ、Ｍ。A1 is second only to Au! It is an electrical conductor, has good fineness and low resistance, and is used as a wiring metal for semiconductors and integrated circuits. An alumina layer of several tens of nanometers is formed on the surface of At due to treatment with moisture in the air or water, and since alumina is a nonconductor, contact resistance is large when just touching the metal. Φ or notch ψ or t to break the alumina layer;
L cannot be made smaller. In a 1gl road, if the contact area is large, 100 μm square or more,
, Ti, M.
などの高融点金属ｋＡ層した後人ｔ、Ｐｔなとの低抵抗
金属を４続して蒸着すれば、接触抵抗すよ小さくて問題
はなかった。しかし、接触部分が畝μｍ角と小さくなる
と、接触抵抗が大きくなり、まったく導通しないことも
生じた。If a layer of a high melting point metal such as kA was formed and then four low resistance metals such as Pt were successively deposited, the contact resistance would be very small and there would be no problem. However, when the contact area is as small as the ridge μm square, the contact resistance becomes large, and sometimes there is no conduction at all.
不発明の目的は、媛触面棟が小さくてもＡＩ との良好
な電気的接触を得ることができる配一方法を提供するこ
とにある。An object of the present invention is to provide a distribution method that can obtain good electrical contact with the AI even if the tactile surface ridge is small.
本発明によルば、基板上にＡＩ配線を形成し、前記ＡＩ
配線上の所定の義賊に従するように高一点金ＪＩ４に下
端とした金属配線を形成した後、７１１１熱することを
待機とした配線方法が得られる。According to the present invention, an AI wiring is formed on a substrate, and the AI wiring is formed on a substrate.
A wiring method is obtained in which the metal wiring is heated at 7111 after forming the metal wiring with the lower end on high single point gold JI4 so as to follow a predetermined pattern on the wiring.
以Ｆ、本発明についての実施例を図面を用いて総明する
。Hereinafter, embodiments of the present invention will be explained with reference to the drawings.
第１凶（ａ） 、 ｌｂＪは、本発明の一実施例ｔａ明
するための図である。第１図（ａ）の１５に粕は基板上
にホトレジストを用いｉζリフトオフ法にＬり厚さ約１
、ＬｌμＩｎ ＯＡ ｌ パターン１を形成し、 ｍ
１−ｔｂ＞ｏ ｘ −５にホトレジストリフトオフ法に
よりＴｉ約α１μｍ％ＡＩ約ＯＪμ＋ｎ、Ｐｔ約０．１
μｉｎ ｔｍ４１ｇして電子統脇着機により蒸麺し°
Ｃ金属パターン２を形成し、この基板τ菫−芥曲気中で
２５０〜４５０℃に畝分閾以上保持することによりＡＩ
、４：Ｕ′４気的接触ａ−１４ゐことができ、り。Figure 1 (a) is a diagram for explaining an embodiment of the present invention. At 15 in Fig. 1(a), the lees were removed using the iζ lift-off method using a photoresist on the substrate to a thickness of approximately 1.
, LlμIn OA l pattern 1 is formed, m
1-tb>ox-5 by photoresist lift-off method: Ti about α1 μm% AI about OJμ+n, Pt about 0.1
μin tm41g and steamed noodles using an electronic side dressing machine°
By forming a C metal pattern 2 and holding this substrate at a temperature of 250 to 450°C above the ridge threshold in a τ violet-curved air, the AI
, 4: U'4 gaseous contact a-14.
嫁御パターン２にシいＣ１’Ｉ’ｉ／よ一融点金Ｍ、Ａ
ｌは＊ａｍ＊ａ４、ＰｔｔｉＡ１表面の酸化ｔ−ぐｆｃ
ｄ）のものである。そして、ム鳳パターンｌと全組パタ
ーン２の−Ｍ婦分は４μｍ角である。Wife pattern 2 C1'I'i/Yoichi melting point gold M, A
l is *am*a4, oxidized t-gfc on the surface of PttiA1
d). The -M portion of the pattern 1 and the total pattern 2 is 4 μm square.
ル成し／ＣＣ構機パターン２０両４４Ｏ）’ ｔｌ、ド
にＰｔ癲を当てて−り疋し瓦パ、ド１−孤仇から、一定
保ＮＺ一度の１−一τ第２図に示す。挾鷹抵仇は保持一
度が＾くなるＶＣつれて小さくなり、３５０℃で厳小に
なり、これ以上＾く／ぼると、また大きくなる。Rule formation / CC mechanism pattern 20 cars 44O)' tl, apply Pt wire to do - rivet tile pa, do 1 - from lone, constant maintenance NZ once 1-1 τ shown in Figure 2 . The resistance decreases as the VC increases, becomes extremely small at 350°C, and increases again if the temperature rises further.
ｍｗｔが４００℃以上で抵抗が大さくなるのは人１ と
Ｔｉが共晶反応するためと考えらｆＬる。よって熱処理
のＬ−１，持温度は２５０〜４５０℃の範囲が適当であ
る。そ゛して、３５０℃で１０分間保持したものの接触
抵抗は１．３２±０．５７ｉＩ（９５％分布限界）であ
る。The reason why the resistance becomes large when mwt is 400°C or higher is thought to be due to the eutectic reaction between Ni and Ti. Therefore, L-1, the holding temperature of the heat treatment, is suitably in the range of 250 to 450°C. Therefore, the contact resistance after being held at 350° C. for 10 minutes was 1.32±0.57 iI (95% distribution limit).
また、４００℃でピークＶＣなり３００℃間が３〜４分
になるような山伏に加熱しても、３．５２±１．７４Ｍ
になる。In addition, even if heated to a Yamabushi where the peak VC is at 400℃ and the time between 300℃ is 3 to 4 minutes, it will be 3.52±1.74M.
become.
このよ５を本発明により、Ａ１ との接触−分が数μｍ
角と小さくても接触抵抗、ユ認Ωと小さく、熱感Ｊｌ！
ｊ＃は数百Ｍであったことからも、本発明のＡＪ果は・
Ａらかである。 。According to the present invention, the contact time with A1 is several μm.
Even if the corner is small, the contact resistance is as small as Ω, and the heat sensation is high!
Since j# was several hundred M, the AJ effect of the present invention is
A. It's easy. .
実施−では、高融点貧属としＣ’ｌ’ ｉ 倉用いたが
凶のＯｒ、＋ｍＯ，Ｔａなどを用いてもムい。 。In the implementation, C'l' i was used as a high melting point poor metal, but it is also not possible to use poor metals such as Or, +mO, Ta, etc. .
ａ４１凶ｗｉ Ａ ｌ とのｍｍ的接触を得るための本
発明の＾施例ｔ’ｄ明Ｉる九めの図でめり。ｌは杷縁譲
叔上のム亀パターン、２＋１Ｔ＞／ｈｌ／Ｐ＠ ｏ積層
！ｉｌ ＠ ｌ）−らｔｌる貧旙パターン。漠２図は熱
処理の保持一度と接触抵抗の関係を示す図であ机オ １
ａ１′
（（２） ″
（ｂ）An example of the present invention for obtaining mm contact with a41 A l is illustrated in the ninth figure. l is a mukame pattern on a loquat, 2+1T>/hl/P@o lamination! il @ l)-etlru poor pattern. Figure 2 shows the relationship between heat treatment retention and contact resistance.
a1′ ((2) ″ (b)
Claims (1)
線上の所疋の領域に巌するように一融点金ｓｌを下地と
した＊属配縁を形成した後、加熱することを特徴とする
配線方法。 ２．１ＩＩＩｌ融点金属としてＬＪ を用い、２５０〜
４５０℃で加熱すること＊Ｗｔ徴とする待奸−求の範囲
第１項に記載の配線方法。 ・[Claims] 1. After forming an AI interconnection 4IIN on a substrate and forming an *metal interconnection with a single melting point gold SL as a base so as to extend over a designated area on the A1 interconnection, heating is performed. A wiring method characterized by: 2.1III Using LJ as the melting point metal, 250~
The wiring method according to item 1, which includes heating at 450° C. *Wt characteristics.・
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10081181A JPS582045A (en) | 1981-06-29 | 1981-06-29 | Wiring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10081181A JPS582045A (en) | 1981-06-29 | 1981-06-29 | Wiring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS582045A true JPS582045A (en) | 1983-01-07 |
Family
ID=14283739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10081181A Pending JPS582045A (en) | 1981-06-29 | 1981-06-29 | Wiring method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582045A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245510A (en) * | 1984-05-21 | 1985-12-05 | 株式会社 宮園製作所 | Polishing device for foundation tile |
| JPS6159010U (en) * | 1984-09-25 | 1986-04-21 |
-
1981
- 1981-06-29 JP JP10081181A patent/JPS582045A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245510A (en) * | 1984-05-21 | 1985-12-05 | 株式会社 宮園製作所 | Polishing device for foundation tile |
| JPS6159010U (en) * | 1984-09-25 | 1986-04-21 |
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