JPS5870592A - Laser diode - Google Patents

Laser diode

Info

Publication number
JPS5870592A
JPS5870592A JP56168714A JP16871481A JPS5870592A JP S5870592 A JPS5870592 A JP S5870592A JP 56168714 A JP56168714 A JP 56168714A JP 16871481 A JP16871481 A JP 16871481A JP S5870592 A JPS5870592 A JP S5870592A
Authority
JP
Japan
Prior art keywords
submount
chip
solder
laser light
laser diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56168714A
Other languages
Japanese (ja)
Inventor
Makoto Haneda
誠 羽田
Shigeo Sakaki
榊　重雄
Atsushi Uchiyama
淳 内山
Akira Ishii
暁 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56168714A priority Critical patent/JPS5870592A/en
Publication of JPS5870592A publication Critical patent/JPS5870592A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/02385—Positioning of the laser chips using laser light as reference

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To allow to obtain an excellent transversal mode characteristic and a far view image, by slightly projecting one end surface which emits the laser light of a chip fixed on the upper surface of a submount with a solder from the side surface of the submount. CONSTITUTION:The laser diode chip 4 is fixed on a mount 2 with the solder 5 in the state that the emitting part which emits the laser light 6 is in access to the submount 2. The end surface of this chip 4 having one side emitting surface is projected from one side surface of the submount 2 by (b). The value b is several mum-several tenmum. Thus, even when the solder 5 overflows, it is concealed under the lower surface of the chip 4 resulting in the porjection thereof to the side of emiting surface by fixing the chip 4. Thereby, since the laser light does not reflect on the solder bump and the upper surface of the mount 2, the transversal mode defective of a laser light does not generate. Further, since the laser light is not interfered by the bump, the turbulence of a far view image does not generate.

Description

【発明の詳細な説明】 本発明はレーザーダイオード、特に、レーザー光を発振
する出射部がサブマウント側に近接する構造のレーザー
ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser diode, and particularly to a laser diode having a structure in which an emission part that oscillates laser light is close to a submount side.

レーザーダイオードは、第１図に示すように、鋼のステ
ムｌの上面にサブマウント２を半田３を利用して固定す
るとともに、このサブマウント２の上面にレーザーダイ
オードチップ（チップ）４をＡｕ−８ｎあるいはＰｂ−
ａｎ（半田）等のソルダー５で固定した構造となってい
る。１＋、チップ４におけるオプチカルキャビティ（活
性層）は動作時多量の熱を発生することから、放熱効率
を高めるために、活性層はサブマウントに近くなるよう
に固定される。また、活性層の端面はレーザー光６を出
射する出射部を形作っている。そこで、出射部から出射
されたレーザー光６がサブマウント２によって干渉され
ないように、出射面を有するチップ４の一端は図のよう
にサブマウント２の側面と一致するように固定される。As shown in FIG. 1, the laser diode is constructed by fixing a submount 2 to the upper surface of a steel stem l using solder 3, and attaching a laser diode chip (chip) 4 to the upper surface of this submount 2 using Au-- 8n or Pb-
It has a structure in which it is fixed with solder 5 such as AN (solder). 1+, since the optical cavity (active layer) in the chip 4 generates a large amount of heat during operation, the active layer is fixed close to the submount in order to improve heat dissipation efficiency. Further, the end face of the active layer forms an emitting part that emits the laser beam 6. Therefore, so that the laser beam 6 emitted from the emitting section is not interfered with by the submount 2, one end of the chip 4 having the emitting surface is fixed so as to coincide with the side surface of the submount 2 as shown in the figure.

ところで、サブマウント２の側面とチップ４の一端面と
を同一面とするようにして固定する場合、第２図で示す
ような位置決め治具７を用いることが考えられる。この
位置決め治具７は一側面に平滑な基準面８を有している
。そこで、サブマウント２の一側面およびチップ４の一
面をそれぞれ前記基準面８に当接させた状態で支持台９
上に載せて固着を行なう。By the way, when fixing the side surface of the submount 2 and one end surface of the chip 4 so that they are flush with each other, it is conceivable to use a positioning jig 7 as shown in FIG. 2. This positioning jig 7 has a smooth reference surface 8 on one side. Therefore, with one side of the submount 2 and one side of the chip 4 in contact with the reference surface 8, the support stand 9
Place it on top and fix it.

しかし、組立の不均一から、第３図（ａｌに示すように
、チップ４の出射面を有する一端面がサブマラント２の
側面よりもわずかに内１１（ａｔに入った状態で固着さ
れたり、あるいは、第３図（ｂｌのようにソルダー５が
チップ４の出射面側に押し出されて盛土部１０を形放し
てしまうことがある。前者は出射面から出射されたレー
ザー光６がサブマウント２の上面で反射するため、レー
ザー光６の横モード特性を低下させる原因となる。ｔた
、ソルダー５の外み出しによる盛土部１ｏは前記同様に
レーザー光６０反射による横モード特性の低下を来たす
ばかりでなく、外装不良、さらには活性層の上層の逆導
電型層との接触によるシ璽−ト不曳を引き起こすことに
もなり、歩留を低下させてしまう。However, due to uneven assembly, as shown in FIG. , as shown in FIG. 3 (bl), the solder 5 may be pushed out to the exit surface side of the chip 4 and the embankment portion 10 may be deformed.In the former case, the laser beam 6 emitted from the exit surface is Since it is reflected on the upper surface, it causes a decrease in the transverse mode characteristics of the laser beam 6. In addition, the embankment part 1o due to the solder 5 protruding outside only causes a decrease in the transverse mode characteristics due to the reflection of the laser beam 60 as described above. Otherwise, it may cause packaging defects and furthermore, sheet failure due to contact with the layer of the opposite conductivity type above the active layer, resulting in a decrease in yield.

さらに、レーザー光路にソルダーの盛土部］０が臨むと
、遠祉野偉（ＰＰＰ）が乱れてしまう。Furthermore, if the embankment part of the solder] 0 faces the laser beam path, the PPP will be disturbed.

したがって、本発明の目的は、横モード特性および遠視
野偉の良好な特性の優れたレーザーダイオードを提供す
ることにある。Therefore, an object of the present invention is to provide a laser diode with excellent transverse mode characteristics and good far-field characteristics.

また、本発明の他の目的は備頼性が高く製造歩留の高い
レーザーダイオードを提供することにある。Another object of the present invention is to provide a laser diode with high reliability and high manufacturing yield.

このような目的を達成するために本発明は、ステムと、
このステム上に固定されたサブマウントと、サブマウン
トの上面にソルダーを介して固定されたチップと、から
なり、かつチップのレーザー光出射部（オプチカルキャ
ビティ）はサブマウントに近接しているレーザーダイオ
ードにおいて、前記チップのレーザー光を出射する一端
面はサブマウント側面よ、りも数μｍ〜数十βｍ突出し
ているものであって、以下実施例により本発明を説明す
る。In order to achieve such an object, the present invention includes a stem;
It consists of a submount fixed on the stem and a chip fixed on the top surface of the submount via solder, and the laser light emitting part (optical cavity) of the chip is a laser diode close to the submount. In this case, one end surface of the chip from which laser light is emitted protrudes from the side surface of the submount by several μm to several tens of βm.The present invention will be explained below with reference to Examples.

第４図は本発明の一実施例によるレーザーダイオードの
要部を示す正面図である。同図に示すように、レーザー
ダイオードチップ４はレーザー光６を出射する出射部を
サブマウント２に近接した状態、すなわち、サブマウン
ト２に対面するチップ４の下面から３〜５μｍ程度上部
にオプチカルキャビティ（活性Ｊｉｌｌ）１１が延在し
、その端面の出射部からレーザー光（図では一端側のみ
を示すω６を出射する状態でソルダー５を介してサブマ
ウント２に固定されている。ｔた、チップ４の一方の出
射面を有する端面はサブマウント２の一側面からｂ（た
とえば８μｍ）突出している。このチップ４の突出固定
は、第５図に示すように、支持台９上に載置した位置決
め治具７を用いて行なう。FIG. 4 is a front view showing the main parts of a laser diode according to an embodiment of the present invention. As shown in the figure, the laser diode chip 4 has an emitting part that emits laser light 6 in close proximity to the submount 2, that is, an optical cavity is located about 3 to 5 μm above the bottom surface of the chip 4 facing the submount 2. (Active Jill) 11 extends, and is fixed to the submount 2 via the solder 5 in a state in which a laser beam (ω6, only one end is shown in the figure) is emitted from the emission part of the end face. An end face having one output surface of the chip 4 protrudes b (for example, 8 μm) from one side of the submount 2.The protrusion of the chip 4 is fixed by placing it on a support base 9, as shown in FIG. This is done using a positioning jig 7.

位置決め治具７の一側面は垂直に切り立った段付の基準
面を有している。下部は平滑なサブマウント用基準面１
２となっていることから、位置決め治具７上にサブマウ
ント２を載せた後、サブマウント２の所定の一側面をこ
のサブマウント用基準面１２に押し付けて密着させる。One side of the positioning jig 7 has a vertically stepped reference surface. The lower part is a smooth reference surface 1 for submount.
2, after placing the submount 2 on the positioning jig 7, one predetermined side surface of the submount 2 is pressed against this submount reference surface 12 to bring it into close contact.

上部の基準面はサブマウント、用基準面１２からｂだけ
窪んで平滑なチップ用基準面１３となっている。また、
サブマウント用基準面１２の上端はサブマウント２の高
さく厚さ）よりも低くなり、チップ４と当接しないよう
になっている。The upper reference surface is recessed by a distance b from the submount reference surface 12 and serves as a smooth chip reference surface 13. Also,
The upper end of the submount reference surface 12 is lower than the height and thickness of the submount 2, so that it does not come into contact with the chip 4.

そこで、サブマウント２上にチップ４を載置した後、チ
ップ４の一方の出射面端を位置決め治具７のチップ用基
準面１３に押し当て、この状態で熱を加えてあらかじめ
両者の表面に設けておいたソルダー素材を溶融させて両
者の固着を行なう。Therefore, after placing the chip 4 on the submount 2, one end of the output surface of the chip 4 is pressed against the chip reference surface 13 of the positioning jig 7, and heat is applied in this state to coat both surfaces in advance. The solder material provided is melted to secure the two together.

なお、実際にはサブマウント２およびチップ４は共に基
準面に自動的に押し付けられるような一般公知のはね−
構等を用いた治具構造とする。Incidentally, in reality, both the submount 2 and the chip 4 are mounted on a generally known spring that is automatically pressed against the reference surface.
A jig structure using structures etc.

チップ４を取り付けたサブマウント２は半田３によっ１
銅のステムｌＩＣ固定される。Submount 2 with chip 4 attached is attached to 1 by solder 3.
Copper stem IC fixed.

このような実施例によれば、チップ４の出射面がサブマ
ウント２の側面よりもｂだけ突出していることから、ソ
ルダー５が外み出ても、チップ４の下面に隠れ出射面側
に突出することは防止できる。このため、外観不良とな
ることはない。ｉた、チップ４の出射面にソルダーが接
触しないのでシ璽−トも生じない。また、レーザー光が
ソルダー盛上部やサブマウント上面で反射することはな
いので、レーザー光の横モード不良は生じない。さらに
、レーザー光はソルダー盛土部１２８［）Ｋ干渉されな
いことから、遠視野儂の乱れも生じない。According to such an embodiment, since the output surface of the chip 4 protrudes from the side surface of the submount 2 by an amount b, even if the solder 5 protrudes, it is hidden behind the lower surface of the chip 4 and protrudes toward the output surface side. This can be prevented. Therefore, there is no possibility of poor appearance. In addition, since the solder does not come into contact with the output surface of the chip 4, no stamping occurs. Further, since the laser beam is not reflected by the solder embankment or the upper surface of the submount, no transverse mode failure of the laser beam occurs. Furthermore, since the laser beam is not interfered with by the solder embankment 128[)K, no disturbance occurs in the far field.

一方、ソルダー中のＳｎがホイスカとなって徐々にチッ
プ面に沿って延在して来ても、チップ４の出射面部分が
ｂだけ突出していることから、ホイスカの出射端面側と
の接触によるシ冒−ト発生までに多くの時間を要し、寿
命が長（なる。On the other hand, even if the Sn in the solder becomes a whisker and gradually extends along the chip surface, since the output surface of the chip 4 protrudes by an amount b, the contact with the output end surface of the whisker It takes a lot of time for the blast to occur and the lifespan is long.

なお、本発明は前記実施例に限定されない。−たとえば
、チップの突出長さｂは５〜２０μｍｍＫでもよい。Note that the present invention is not limited to the above embodiments. - For example, the protrusion length b of the chip may be 5 to 20 μmmK.

以上のように、本発明によれば、横モード特性。As described above, according to the present invention, transverse mode characteristics.

遠視野儂特性が優れ、外観不良、シ璽−ト不良が少ない
歩留が高く製造コストの安価なレーザーダイオードを提
供することができる。It is possible to provide a laser diode that has excellent far-field characteristics, has few appearance defects and sheet defects, has a high yield, and is inexpensive to manufacture.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のレーザーダイオードの要部を示す正面図
、第２図は想定できるサブマウントへのチップの位置決
め状態を示す説明図、第３図（ａｔ。 （ｂｌはチップの不良取付状態を示す説明図、第４図は
本発明の一実施例によるレーザーダイオードの要部を示
す正面図、第５図は同じくサブマウントへのチップの位
置決め状態を示す説明図である。 ｌ・・・ステム、２・・・サブマウント、４・・・チッ
プ、５・・・ソルダー、６・・・レーザー光、７・・・
位置決め治つント用基準面、１３・・・チップ用基準面
。 代理人　弁理士　　薄　１）利　幸Figure 1 is a front view showing the main parts of a conventional laser diode, Figure 2 is an explanatory diagram showing a possible positioning state of the chip on the submount, and Figure 3 (at. FIG. 4 is a front view showing the main parts of a laser diode according to an embodiment of the present invention, and FIG. 5 is an explanatory view showing the positioning state of the chip on the submount. l...Stem , 2... Submount, 4... Chip, 5... Solder, 6... Laser light, 7...
Reference surface for positioning tool, 13... Reference surface for chip. Agent Patent Attorney Susuki 1) Toshiyuki

Claims (1)

【特許請求の範囲】[Claims] １、　ステふと、このステム上に固定されたサブマウン
トと、サブマウントの上面にソルダーを介して固定され
たチップと、からなり、かつチップのレーザー光出射部
はサブマウンｈＨ近接しているレーザーダイオードにお
いて、前記チップのレーザー光を出射する一端面はサブ
マウント側面よりも数μｍ〜数十μｍ突出していること
を特徴とするレーザーダイオード。1. The stem consists of a submount fixed on the stem and a chip fixed to the top surface of the submount via solder, and the laser beam emitting part of the chip is a laser diode near the submount hH. A laser diode according to the invention, wherein one end surface of the chip that emits laser light protrudes from a side surface of the submount by several micrometers to several tens of micrometers.
JP56168714A 1981-10-23 1981-10-23 Laser diode Pending JPS5870592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56168714A JPS5870592A (en) 1981-10-23 1981-10-23 Laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56168714A JPS5870592A (en) 1981-10-23 1981-10-23 Laser diode

Publications (1)

Publication Number Publication Date
JPS5870592A true JPS5870592A (en) 1983-04-27

Family

ID=15873082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168714A Pending JPS5870592A (en) 1981-10-23 1981-10-23 Laser diode

Country Status (1)

Country Link
JP (1) JPS5870592A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888760A (en) * 1985-07-29 1989-12-19 Mitsubishi Denki Kabushiki Kaisha Optical head apparatus
JP2005347590A (en) * 2004-06-04 2005-12-15 Hamamatsu Photonics Kk Semiconductor laser equipment and method for manufacturing the same
JP2008282962A (en) * 2007-05-10 2008-11-20 Mitsubishi Electric Corp Die bonding apparatus and die bonding method thereof
EP2012151A3 (en) * 2007-07-05 2009-10-21 NEC Corporation Mounting structure of semiconductor optical element
JP2013505486A (en) * 2009-09-21 2013-02-14 コーニング インコーポレイテッド Method for passively aligning an optoelectronic component assembly on a substrate
JP2013225654A (en) * 2012-03-22 2013-10-31 Nichia Chem Ind Ltd Semiconductor laser device
JP2015228401A (en) * 2014-05-30 2015-12-17 日亜化学工業株式会社 Semiconductor laser device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888760A (en) * 1985-07-29 1989-12-19 Mitsubishi Denki Kabushiki Kaisha Optical head apparatus
US4987566A (en) * 1985-07-29 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Optical head apparatus
JP2005347590A (en) * 2004-06-04 2005-12-15 Hamamatsu Photonics Kk Semiconductor laser equipment and method for manufacturing the same
JP2008282962A (en) * 2007-05-10 2008-11-20 Mitsubishi Electric Corp Die bonding apparatus and die bonding method thereof
EP2012151A3 (en) * 2007-07-05 2009-10-21 NEC Corporation Mounting structure of semiconductor optical element
JP2013505486A (en) * 2009-09-21 2013-02-14 コーニング インコーポレイテッド Method for passively aligning an optoelectronic component assembly on a substrate
JP2013225654A (en) * 2012-03-22 2013-10-31 Nichia Chem Ind Ltd Semiconductor laser device
JP2015228401A (en) * 2014-05-30 2015-12-17 日亜化学工業株式会社 Semiconductor laser device

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