JPS59103249A - Scanning conversion type storage tube - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention]

TECHNICAL FIELD The present invention relates to a storage oscilloscope7. The present invention relates to scan converting storage tubes for use in A-Di exchangers and the like, and more particularly to storage tubes having improved storage targets. Prior Art A scan conversion type storage tube that applies an electrical signal to a deflection plate, writes a waveform corresponding to the signal onto a storage googet using an electron beam, and can be suspended as a stored drum-shaped electrical signal as required. Thus, scan converter tubes are known. 13 Japanese Unexamined Patent Publication No. 1066/1983 includes Figures 1 and 1. As schematically shown in Figure 2, a single collector electrode (2) is provided on an insulating single crystal substrate (1), and the accumulation layer or accumulation region made of the insulating single crystal is bombarded with an electron beam. A storage target has been disclosed that has a structure in which electron-hole pairs are generated by this, and these are used for writing to increase the writing speed. By the way, when injecting the signal g into the storage target shown in FIG. Collector t ′@! , the potential of +2+ is set to a value greater than or equal to the first crossing potential at which the secondary electron emission rate δ (number of secondary electrons/number of J-order electrons) becomes [1 (full value is 2350 V with respect to the cathode).
Set it to impact the target with the child beam. As a result, the potential of the storage surface (3) on the surface of the substrate +IJ becomes 2350V, which is the same as the potential of the collector electrode (2). Next, in order to obtain an erase potential difference of V8, the potential of the collector electrode (2) is set to a voltage lower than the first voltage difference, for example, to the cathode, and the voltage is set to 0~+15V.
)! ! The storage surface (3) is set to the selected +IUV and bombarded with an electron beam again to bring the storage surface (3) to the same potential as the cathode. As a result, an erase potential difference of ]OV is generated between the storage surface (3) and the collector electrode +21. Next, in order to write a signal to the storage target, set the collector voltage @(2) to 1m [Yth] crossing potential higher than the original @] to OkV, and selectively write the signal to the storage target according to the beam signal. to project. As a result, the sinking part (beam impact part) appears as a cathode, and for example, 999
]V (-9V for collector electrode +21), and the non-written part has an erase potential difference of 10V from JOkv. 19 for 2)
A charge bump of V and -10V is formed. Next, at the time of reading, for example, +51C is set to the collector electrode (2) and the negative electrode. As a result, the potential of the written part is 14V with respect to the cathode, and the potential of the non-written part is 't
The JL level is -5V (with respect to the cathode). Now, when raster scanning is performed with an unmodulated electron beam with the beam cutoff voltage at the target being 15V, the electron beam will reach the +'-4V indented area and reach the -5V non-written area. The electron beam does not reach them, making it possible to distinguish between them and read them. In the method described above, if the erase potential difference V8 is set to a large value,! The capture rate of secondary electrons or electron-hole pairs generated during writing becomes 2 (increased), and as a result, the writing speed becomes faster. ) The variation in the cutoff voltage during accent removal that occurs based on
If VF is set to a large value, the variation in cutoff voltage during reading will inevitably increase. Therefore, there is a limit to the magnitude of the erase potential difference V8, and there is also a limit to the improvement in writing speed by setting the erase potential difference V8 large. The problems mentioned above are caused by accumulation on glass substrates, 5xOx, etc.
A similar problem occurs when forming ffj. OBJECTS OF THE INVENTION It is an object of the present invention to provide a scan converting type storage tube which can achieve an improvement in the charging speed and the ease of Vc. SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a scan conversion type storage tube in which an electric signal is written to the storage target by deflecting an electron beam and projecting the electron beam onto the storage target. crystal. A plurality of collector electrodes electrically insulated and separated, preferably made of polycrystalline, amorphous, etc., and having a resistivity of 0 Ω,
The present invention relates to a scan conversion type storage tube characterized in that means is provided for applying different voltages to the collector electrodes of the decimal numbers. According to the above invention, the electrically isolated decimal number (7)
Near V Y electrodes are provided, these are arranged parallel to each other, and different voltages can be applied. Therefore, when different voltages are applied to adjacent collector electrodes during writing, the difference between adjacent collector electrodes A potential difference occurs, and 2
It becomes possible to efficiently capture secondary electrons and/or electron-hole pairs, and it becomes possible to obtain a high writing speed 2 even when the erase potential difference v8 is zero or a low value. Embodiments Next, embodiments of the present invention will be described with reference to the drawings. The storage target +41 related to Example 1 is a sapphire single crystal substrate (5+), which is an insulating single crystal, on a flat raw surface of 10,000, and the collector electrodes of MJ & (6) and the second electrode are electrically isolated from each other. The collector has a pole (71).Since the single crystal substrate (5) is an electrical insulator, if the first and second collector electrodes (6117) are placed separately, they will be electrically ] and the second collector electrode +61
(71 is metal such as chromium (('r)) thickness 0.05
It is coated to a thickness of .mu.m to several .mu.m and formed into a comb shape using photoresist technology, and has a linear portion with a width of approximately 0.5 to 50 .mu.m. (6a) of the collector electrode (6)
) of the second collector electrode (7).
a) The pattern is striped. Each striated portion (6a) (7
There is a filament accumulation surface (8), that is, a single crystal substrate (
A part of the surface of the accumulation region (9) consisting of 5) is led out. Note that the distance between the linear portions C6a) and (7a), that is, the pitch, is smaller than the diameter of the electron beam, ranging from several μm to several hundred.
It is set to μm. FIG. 5 shows the accumulated target layer 1'+ shown in FIGS. 3 and 4.
This figure shows a scan conversion type storage tube with a built-in 41' f. This storage tube is constructed by sequentially arranging an electron gun αD, a deflection thread U21, a collimation thread U21, and a storage target (4) in a vacuum enclosure (1(1)). The baskets Vcuυ are sequentially arranged on the cathode side, and on the control electrode u.
9. Consists of an accelerating electrode (171), an astigmatism electrode (171), and an electron beam directed toward the target (4).A deflection thread (12+ is a pair of wires arranged along the beam bath) It consists of a vertical deflection system consisting of a vertical deflection plate and a horizontal deflection thread end consisting of a pair of horizontal deflection plates, which deflects the electron beam in two orthogonal directions, the vertical and horizontal directions.The collimation system consists of a wall electrode. The function of the collimation lens is to make the low-energy electron beam incident perpendicularly to the target (4) during reading and reading. are the first and second collector electrodes (61F71 K - the first as means for applying different voltages) and the second lead member 231 (24
1 are connected, and these are each led out to the outside of the enclosure uO1O. The j-th lead member (c) is a resistor (5) and a switch circuit (F).
26J, the prime power supply 127) and the erase power supply (c). The first one is selectively connected to the one for writing and the one for reading. The second lead member □□□ is connected to the second writing type C; It is connected and the same potential as that of the J-th lead member 123) is applied. To operate the storage tube of FIG. 5, for example,
The 'cathode' side has a voltage of -1 kV, the control 'electrode (15) has a voltage of about 0 to -75 V based on the cathode field, and the accelerating electrode (16
1 is OV (+] kV based on cathode a4I)
, the voltage is optimally adjusted according to the amount of electron beam, and the wall electrode system D is used for focusing the polar α7j and astig electrodes.
OV (+] kV for the cathode U slope), 3 kV (+] kV for the field mesh electrode (2 kV for the cathode IJ41),
．． 3 kV). When obtaining an erased state prior to writing an electrical signal to this target (4), first the switch circuit (c)
By turning on the contact a'r of the switch circuit c3 and the contact e of the switch circuit c3, the third and second collector electrodes +
6) Connect t7) to (27) of the prime mold and set the collector electrode (potential of 61 (7) above the cross potential, for example) 350V (cathode t'l'JL"'C2350'V)
VC sky is set, and the entire effective scanning area of the target (4) is bombarded with an unmodulated electron beam. This ensures that all accumulation surfaces (8) have the same 135
0V (2350V with respect to the cathode). Next, switch circuit c! 6) The contact point is not turned on. From the erasing electrode (c) to the first and second collector electrodes (6
) A voltage below the first crossing potential, for example -990 V [+] OV with respect to the cathode, is applied to (7), and the entire surface of the target (4) is scanned with the unmodulated electronic beam. As a result, the potential of the storage surface f81 becomes the cathode (1] kV (OV relative to the cathode), which is the same as 141, and an erase potential difference V8 of Vc]OV is generated between the storage surface +81 and the collector electrode t61 +7J.Next, the signal When writing data into the control room, the first collector electrode +61 and the second collector electrode are connected to the control room.
) Copper electrode (7) and several volts to several] 00 volts) V
Different voltages are supplied so that a range of potential differences occurs. That is, the switch circuit (contact CV of 261 is turned on)
The writing type c! Collector electrodes (6th to 91st)
1 to the first crossing potential of the secondary electron emission characteristic curve 1/;I
For example, a voltage of 9 kV (0 kV relative to the cathode) is applied. In addition, the contact f of the switch circuit 6B is turned on, and a voltage of 9.1 kV (for example, 0.1 kV with respect to the cathode) is applied from the second writing die 2 to the second collector electrode (
7I stamp. When a potential difference VW=10'0 is applied between the first collector electrode (6) and the second collector electrode (7), an erase voltage is applied between the storage surface (8) and the collector electrode (61 (7)). A potential difference (60V) is obtained by adding the mode voltages.As described above, the storage surface (8) and the collector electrode 161 (7)
target +41 while increasing the potential difference between
'2 When selectively bombarded with an electron beam, secondary electrons and electron-hole pairs are generated, one of the secondary electrons is collected at +71 K at the collector electrode with a large assembly effect, and the other electron-hole pair is are separated, and the electrons move toward the collector electrode (7) at a large drift speed. Therefore, the ratio of 8 bonds of electron-hole pairs decreases, and the borrowing rate increases. Since it is almost inversely proportional to VW, the collector-to-collector potential difference VW
If you give it a try, the writing speed will improve to a certain degree. That is, when an electron beam is applied in a state where there is an erase potential difference VF and a collector potential difference VW, an electromagnetic hole-hole pair is generated in the solid, and the electron and hole are separated. Electrons are captured at the collector electrode (7) with a large drift velocity based on the large drift electric field due to the erase potential difference VF and the potential difference VW between the collector, and the holes with a relatively slow drift velocity are captured at the accumulation surface ( 8), the negative charges are neutralized and the potential of the storage surface (8) is increased. This increases the write speed by %. %
& (If 5J is used as an amorphous product such as glass or S
In the case of a polycrystalline insulator such as +02, the nuisance effect due to secondary electron emission becomes more hybrid than the electron-hole illusion effect in the solid. Even when writing is performed mainly by the secondary electron emission effect in this way, by providing a potential difference vw between the collectors, the secondary electron capture efficiency can be improved and the enrichment speed can be improved. I can do it. In +41, the part that is not bombarded by the electron beam (the non-written part) remains in its original state, so the part whose potential has increased due to writing and the part which has not been written and is kept at its original potential. A charge slam occurs due to the exposed parts. 4F @ reading of the charge button is based on the collector potential difference V mentioned above. Alternatively, it is possible to change the potential of the collector electrode (61In) to a potential near the cut-off with another arbitrary voltage deviation. +61
(We will discuss the case where the same potential is applied to 7F. Now, for the read mode, switch circuit (J6)
For example, from the contact d' (+- is turned on, and the contact e=i7 of the switch circuit 6υ is turned on for face removal m!w% (to)) to the first and second collectors 16+ +71, -
When a pressure of 995V (+5V to the cathode) is applied, the potential of the accumulation surface (8) in the non-soaked part becomes -]005
V (-5V to the cathode), collector 11 pole 16
1 (If you use 71'r4 leather, the Vx = 10
Only V is low. On the other hand, since the potential of the writing part rosette surface (8) has increased due to the writing, the non-writing accumulation surface (8)
), for example, -1004V (14cm with respect to the cathode), and the collector electrode t61 [71
Based on this, it becomes -9V. Now, the cutoff voltage Vc
If the voltage is -5V with respect to the cathode, then the potential of the collector electrode near the storage surface (8) of 14■ in the writing part becomes a voltage higher than the cutoff, and the electron beam reaches the collector electrode. . On the other hand, the non-written part has a 5V accumulation surface (8
) can be read by scanning the entire surface of the target +41 with a cut-off current, distinguishing between written and non-written parts. Note that the potential of the collector electrode +61 (1) during reading is a cut-off voltage (■) determined in relation to the erase potential difference vF. is set near . This cutoff voltage ■. is a potential that is positive with respect to the cathode, is lower than the erase potential, and is a potential that prevents the beam from flowing into the non-written portion. As is clear from the above, even without increasing the erase potential difference v8, by generating the collector-collector potential difference VW during writing, it is possible to improve the writing speed, and a writing speed of about 5000 div/μsec can be easily achieved. I can do it. Also. Erasing potential difference v]! Since there is no need to increase the collector electrode (61 (71) pattern), it is possible to minimize the variation in the cutoff voltage V in the same target due to processing errors in the pattern of the collector electrode (61 (71), and improve the stocking speed. If the fluctuation is small, the readout output can be obtained with a good signal-to-noise ratio.Also, even if the potential difference VB is zero, the collector voltage constant V
Signals can be written using the effect of w. Therefore, in this case, the operation of applying the erase potential difference V8 becomes uncomfortable. Second Embodiment 1 (Fig. 6) The scan conversion type storage target (4a) shown in Fig. 6 has a collector electrode (61t7J batons arranged in a grid pattern).
. be. For this reason, after the first collector poles (6) are provided in a lattice shape on the seven-layer single crystal substrate (5), the -th collector poles (6) are placed outside the effective scanning area. The part is covered with an insulating layer, and an M2 collector electrode (7
7 are arranged in a grid pattern to form a multilayer wiring structure. Even with this configuration, since the linear portions (6a) (7aJ) are alternately arranged in parallel within the target effective area, the same effect as in the j-th embodiment can be obtained. Third embodiment ( (Fig. 7, Fig. 8) The target (4b) shown in Fig. 7 and Fig. 8 is a sapphire single crystal substrate (5
J] and second collector electrodes (6) (71) are provided in a comb-like shape, and a third collector electrode 141 is provided in a meandering manner between the two. The width of the striated portion (6m) (7a) (34a) is 0.5 pm
~50ttm. The pitch of these is several μm to several 100 μm. In this way three collector electrodes +61 +7) +34
1, in the target effective area, each striated portion (
6a)+7a)(34a) are arranged in parallel to each other, forming a stripe shape as a whole, so it can be used in the same way as the target t41 in FIG. 3. That is, this target C4b) is the target (
Similar to 4j, it is used by being incorporated into a storage tube as shown in FIG. When assembling the storage tube, three collector electrodes 16 + [71 round lead members are drawn out independently from the vacuum enclosure, and the collector electrodes +61 +
The structure is such that it is possible to apply a voltage to the terminal 71-. Although various write and read operation methods are possible using this target, one typical operation will be described below. First, when erasing, three collector electrodes + 61
(The same voltage is applied to the collector electrodes 16 and 77-, and the same voltage is applied to each collector electrode 16.
1 t7J If you apply power to C141, it will be single! Since it can be regarded as a pole, VC can be erased in exactly the same way as in FIG. Next, when writing, the same voltage (for example, 9 kV) is applied to the first and second collector electrodes +61 to +77. Between the third collector and the first and second collectors
! +61 (7) Higher voltage (e.g. 9.]kV
), and the beam shock is applied as in the case of the second embodiment. As a result, writing can be performed in exactly the same way as in the case of the second embodiment. That is,! Writing can be performed in a state where there is a potential difference VwY between electrodes, and the same effect as in the second embodiment can be obtained. When removing welts, for example, No.], No. 2. The same voltage is applied to the third collector electrode (61 (71) (341), and the same voltage is applied to the third collector electrode (341), and the same voltage is applied to the third collector electrode (61 (71) (341), and the same voltage is applied to There is no problem in applying a different voltage to each electrode (64 (73C341) and projecting a writing beam as another writing method for (4b) of the target laser in Fig. 6. In this case, , ] collector electrode 167 [flj eh 9k
Apply a voltage of 9.3 kV to the third collector electrode (the next highest example is 9.3 kV), and apply a voltage of 9.3 kV to the third collector electrode.
)Vcit/It is also high, for example, 9.2 kV'r is applied. Due to this. It becomes possible to give a potential difference vw of 100 V between each electrode, and writing becomes possible VC in exactly the same way as in the j-th embodiment. Fourth Example 1 (Figure 9) The target (4c) shown in Figure 9 is one in which the third collector electrode is provided in a lattice shape. , Mass, No. 317) CoV vectors are provided in a grid pattern, and an insulating layer 43 is provided outside the effective scanning area.
fil is provided and the J-th and second collector electrodes (6
1 (71'Y < L. Even if formed in this way, the linear portion 16a of the '?!r electrode) [7
Since the a-bars 34a) are arranged parallel to each other in the effective scanning area, the same effect as that of Kugela (4b) in FIG. 7 can be obtained. Modifications Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and for example, the following modifications are possible. (A) Figure 10 [As shown, the striated portion [6aJ(
7a) (34a) It is also possible to arrange them in the following manner. The target (4d) shown in Fig. 10 is the target (4C) shown in Fig. 9.
), an insulating layer (3) is placed on the third collector electrode (3).
6+V is provided, and a second collector electrode (6+V) is provided on top of this.
) (7), but the striated portion (6a
) The arrangement of C7a) (34a) is different from that in FIG. That is, No. J, No. 3. Second striated portion (6aJ (34a
J (7aJ), and the first filament portion (6
a) and the third striated portion ta4a) and the second accumulated surface (8a) between the third striated portion (34a) and the second striated portion (7a). The width of the accumulation surface (8b) is the second striated portion

The width is set smaller than the width of the third accumulation surface (8C) between [7a) and the ]th linear portion (6a). In addition, in the target (4) having two collector electrodes as shown in FIG. They may be arranged alternately. B) As shown in Figure 31, there is a back chamber* on the back of the board (5).
8nj may be provided and an appropriate voltage may be applied. (As shown in FIG. 12, a 510W layer with a polycrystalline structure may be provided on top of the silicon layer, and this Si layer 13 may be used as an insulator accumulation layer.) l A sapphire single crystal substrate ( 5) Instead of Mg
O. caF'2. An insulating single crystal substrate such as MgF2 may also be used. Substrate (5) An amorphous insulator such as glass may be used. [F]) Den a (67 (77 (34J beg Cr, AI
It may be formed of a single layer or a composite layer of , Ni, Mo, ALI, etc. Alternatively, transparent material such as 5no2 may be used as the pole. (In the zero valley embodiment, the extending direction of the filament portion (68) [78/34a) was made to coincide with the horizontal scanning direction of the beam. They may be arranged so that they are perpendicular to each other. (2) In the storage tube of FIG. 5, a collimation system a:1 is provided between the WAR) L/electrode and the filled mesh electrode, but a configuration may be adopted in which two of these are omitted. (Il It is of course applicable not only to writing in the hourglass shape 2 but also to writing digital signals. (Jl It is also possible to have a structure in which an insulating material storage layer is provided on an alumina substrate or the like.

[Brief explanation of drawings]

Figure 1 is a plan view showing the principle of targeting I7E rice.
Fig. 2 is a sectional view taken along the line II-II of the target in Fig. 1, Fig. 3 is a plan view showing the principle of the target of Embodiment 1 of the present invention, and Fig. 4 is a cross-sectional view of the target in Fig. 3b). +V-
tV line cross-sectional view; FIG. 5 is a cross-sectional view showing the principle of the storage tube incorporating the target of FIG. 3; FIG. 6 is a plan view showing the principle of the storage target of the second embodiment. , FIG. 7 is a plan view showing the principle of the target of the third embodiment, and FIG. 8 is a plan view showing the principle of the target in FIG. 7.
tn line sectional view, FIG. 9 is a plan view showing the principle of the target of the fourth embodiment, and FIG. 0 is a target 'Y of a modified example.
A plan view showing the principle, and FIGS. 13 and 12 are cross-sectional views showing the target 'Y of another modification. (4)...Storage target, (5)...Substrate, (
6j...First collector electrode, (7F...Second collector electrode, (8)...Storage surface, (9J...Storage area. Agent: Noriyuki Takano, Commissioner of the Japan Patent Office)
Kazuo Wakasugi 1. Indication of the case 1982 Patent Application No. 212375 2, Title of the invention: Conversion type storage tube 3, Person making the amendment Relationship to the case: Applicant 4, Agent (11 Specification, page 7, line 1) , "-20VJ 1--1
Correct to 0VJ. (2) "Kore" on page 13, line 5 of the specification is changed to "kore"
Correct to. (3) "Collector potential difference V8" on page 19, line 1O of the specification is corrected to "collector potential difference VwJ."

Claims (1)

[Scope of Claims] (11) In a scan converting storage tube of a type in which an electron beam is deflected and projected onto a storage target to write an electric signal to the storage target VC, A scan conversion type storage tube comprising a plurality of collector electrodes, and a means for applying different voltages to the plurality of collector electrodes. (2) The storage substrate is insulated. (3) The scan conversion type storage tube according to claim 1, wherein the storage substrate is an amorphous insulator substrate. (4) The scan conversion type storage tube according to claim 1, wherein the storage substrate is a multi-connected and insulating substrate. The scan converting storage tube according to item 3, wherein the Jth and second collector electrodes have a range of percentage corrections. 6. The scanning device according to claim 5, wherein the linear portion of the first collector electrode and the linear portion of the second collector electrode are arranged parallel to each other. Conversion type storage tube. (7) The collector electrode of the above number is at least J
, 2nd. and a third collector electrode, the first, second . 2. A scan conversion type storage tube according to claim 1, wherein the third collector electrode has a plurality of linear portions arranged in parallel to each other. (81 The J, second, and third collector electrodes are the Jth, second, and third collector electrodes); the linear portion of the second collector electrode; and the linear portion of the third collector electrode. part, the first part of the second collector is the striated part of the pole,
%IV!, in which the first collector is arranged repeatedly in the order of the striated portions of the poles. T-Claim No. 7
Scan-converting storage tube as described in Section 1. (91) The means for applying the different voltages f: IJ is a circuit that applies a voltage that causes a VC voltage difference between the plurality of collector electrodes when the signal is convolved with the target by the electron beam. A scan converting storage tube according to claim 1.