JPS59155935A - プラズマを用いたパタ−ン形成法 - Google Patents
プラズマを用いたパタ−ン形成法Info
- Publication number
- JPS59155935A JPS59155935A JP3051683A JP3051683A JPS59155935A JP S59155935 A JPS59155935 A JP S59155935A JP 3051683 A JP3051683 A JP 3051683A JP 3051683 A JP3051683 A JP 3051683A JP S59155935 A JPS59155935 A JP S59155935A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- pattern
- substrate
- light
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3051683A JPS59155935A (ja) | 1983-02-25 | 1983-02-25 | プラズマを用いたパタ−ン形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3051683A JPS59155935A (ja) | 1983-02-25 | 1983-02-25 | プラズマを用いたパタ−ン形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155935A true JPS59155935A (ja) | 1984-09-05 |
| JPH0526329B2 JPH0526329B2 (2) | 1993-04-15 |
Family
ID=12305969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3051683A Granted JPS59155935A (ja) | 1983-02-25 | 1983-02-25 | プラズマを用いたパタ−ン形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155935A (2) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174639A (ja) * | 1985-01-28 | 1986-08-06 | Semiconductor Energy Lab Co Ltd | 光エツチング方法 |
| JPS6298731A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 表面処理方法およびその装置 |
| JPH03163825A (ja) * | 1989-08-02 | 1991-07-15 | Nec Corp | エッチング方法およびエッチング装置 |
| JP2016514364A (ja) * | 2013-02-26 | 2016-05-19 | ソイテックＳｏｉｔｅｃ | 構造を処理するためのプロセス |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (2) * | 1974-04-01 | 1975-10-15 | ||
| JPS55113329A (en) * | 1979-02-23 | 1980-09-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Light dry etching |
| JPS57181119A (en) * | 1981-05-01 | 1982-11-08 | Agency Of Ind Science & Technol | Forming method for pattern |
-
1983
- 1983-02-25 JP JP3051683A patent/JPS59155935A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (2) * | 1974-04-01 | 1975-10-15 | ||
| JPS55113329A (en) * | 1979-02-23 | 1980-09-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Light dry etching |
| JPS57181119A (en) * | 1981-05-01 | 1982-11-08 | Agency Of Ind Science & Technol | Forming method for pattern |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174639A (ja) * | 1985-01-28 | 1986-08-06 | Semiconductor Energy Lab Co Ltd | 光エツチング方法 |
| JPS6298731A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 表面処理方法およびその装置 |
| JPH03163825A (ja) * | 1989-08-02 | 1991-07-15 | Nec Corp | エッチング方法およびエッチング装置 |
| JP2016514364A (ja) * | 2013-02-26 | 2016-05-19 | ソイテックＳｏｉｔｅｃ | 構造を処理するためのプロセス |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526329B2 (2) | 1993-04-15 |
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