JPS59201044A - Heat resistant film photoresist laminate - Google Patents
Heat resistant film photoresist laminateInfo
- Publication number
- JPS59201044A JPS59201044A JP7556483A JP7556483A JPS59201044A JP S59201044 A JPS59201044 A JP S59201044A JP 7556483 A JP7556483 A JP 7556483A JP 7556483 A JP7556483 A JP 7556483A JP S59201044 A JPS59201044 A JP S59201044A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer resist
- film
- polymer
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 43
- 229920000642 polymer Polymers 0.000 claims abstract description 33
- 229920001577 copolymer Polymers 0.000 claims abstract description 17
- 229920002587 poly(1,3-butadiene) polymer Polymers 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000003999 initiator Substances 0.000 claims abstract description 10
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 19
- 150000005673 monoalkenes Chemical class 0.000 abstract description 3
- 238000013329 compounding Methods 0.000 abstract 1
- -1 glycerin ester Chemical class 0.000 description 29
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 23
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 239000000049 pigment Substances 0.000 description 9
- 229920000098 polyolefin Polymers 0.000 description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 238000007363 ring formation reaction Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 230000032798 delamination Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000008282 halocarbons Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 3
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- HXIQYSLFEXIOAV-UHFFFAOYSA-N 2-tert-butyl-4-(5-tert-butyl-4-hydroxy-2-methylphenyl)sulfanyl-5-methylphenol Chemical compound CC1=CC(O)=C(C(C)(C)C)C=C1SC1=CC(C(C)(C)C)=C(O)C=C1C HXIQYSLFEXIOAV-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- BVVRPVFKRUVCJX-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)CO Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)CO BVVRPVFKRUVCJX-UHFFFAOYSA-N 0.000 description 2
- 241000233805 Phoenix Species 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- SWHLOXLFJPTYTL-UHFFFAOYSA-N [2-methyl-3-(2-methylprop-2-enoyloxy)-2-(2-methylprop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(COC(=O)C(C)=C)COC(=O)C(C)=C SWHLOXLFJPTYTL-UHFFFAOYSA-N 0.000 description 2
- 150000008062 acetophenones Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 150000001728 carbonyl compounds Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002828 nitro derivatives Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- WTARULDDTDQWMU-RKDXNWHRSA-N (+)-β-pinene Chemical compound C1[C@H]2C(C)(C)[C@@H]1CCC2=C WTARULDDTDQWMU-RKDXNWHRSA-N 0.000 description 1
- WTARULDDTDQWMU-IUCAKERBSA-N (-)-Nopinene Natural products C1[C@@H]2C(C)(C)[C@H]1CCC2=C WTARULDDTDQWMU-IUCAKERBSA-N 0.000 description 1
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- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- YQPDFPOALLAYGO-UHFFFAOYSA-N 1,5-bis(4-azidophenyl)penta-1,4-dien-3-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC(=O)C=CC1=CC=C(N=[N+]=[N-])C=C1 YQPDFPOALLAYGO-UHFFFAOYSA-N 0.000 description 1
- OQZQDGSYKKFLTE-UHFFFAOYSA-N 1-(4-azidophenyl)-3-phenylprop-2-en-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C(=O)C=CC1=CC=CC=C1 OQZQDGSYKKFLTE-UHFFFAOYSA-N 0.000 description 1
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 1
- RJKGJBPXVHTNJL-UHFFFAOYSA-N 1-nitronaphthalene Chemical compound C1=CC=C2C([N+](=O)[O-])=CC=CC2=C1 RJKGJBPXVHTNJL-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
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- UZNOMHUYXSAUPB-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]cyclohexan-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=C(CCC1)C(=O)C1=CC1=CC=C(N=[N+]=[N-])C=C1 UZNOMHUYXSAUPB-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- LTHNHFOGQMKPOV-UHFFFAOYSA-N 2-ethylhexan-1-amine Chemical compound CCCCC(CC)CN LTHNHFOGQMKPOV-UHFFFAOYSA-N 0.000 description 1
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- XFOHWECQTFIEIX-UHFFFAOYSA-N 2-nitrofluorene Chemical compound C1=CC=C2C3=CC=C([N+](=O)[O-])C=C3CC2=C1 XFOHWECQTFIEIX-UHFFFAOYSA-N 0.000 description 1
- LZHCVNIARUXHAL-UHFFFAOYSA-N 2-tert-butyl-4-ethylphenol Chemical compound CCC1=CC=C(O)C(C(C)(C)C)=C1 LZHCVNIARUXHAL-UHFFFAOYSA-N 0.000 description 1
- IKEHOXWJQXIQAG-UHFFFAOYSA-N 2-tert-butyl-4-methylphenol Chemical compound CC1=CC=C(O)C(C(C)(C)C)=C1 IKEHOXWJQXIQAG-UHFFFAOYSA-N 0.000 description 1
- LFIVUPGZYYBPKC-UHFFFAOYSA-N 3,4-dihydro-2h-chromene;1h-indene Chemical compound C1=CC=C2CC=CC2=C1.C1=CC=C2CCCOC2=C1 LFIVUPGZYYBPKC-UHFFFAOYSA-N 0.000 description 1
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- CUARLQDWYSRQDF-UHFFFAOYSA-N 5-Nitroacenaphthene Chemical compound C1CC2=CC=CC3=C2C1=CC=C3[N+](=O)[O-] CUARLQDWYSRQDF-UHFFFAOYSA-N 0.000 description 1
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- SAIKULLUBZKPDA-UHFFFAOYSA-N Bis(2-ethylhexyl) amine Chemical compound CCCCC(CC)CNCC(CC)CCCC SAIKULLUBZKPDA-UHFFFAOYSA-N 0.000 description 1
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- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
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- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- CXNAFLUSDQQXCP-UHFFFAOYSA-N [(2-diazonioimino-1,2-diphenylethylidene)hydrazinylidene]azanide Chemical compound C=1C=CC=CC=1C(=NN=[N-])C(=N[N+]#N)C1=CC=CC=C1 CXNAFLUSDQQXCP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XCPQUQHBVVXMRQ-UHFFFAOYSA-N alpha-Fenchene Natural products C1CC2C(=C)CC1C2(C)C XCPQUQHBVVXMRQ-UHFFFAOYSA-N 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229930006722 beta-pinene Natural products 0.000 description 1
- YMEPVPIIHONYLV-UHFFFAOYSA-N bisbenzimidazo[2,1-b:1',2'-j]benzo[lmn][3,8]phenanthroline-6,9-dione Chemical compound C1=CC=C2N(C(C3=CC=C4C(N5C6=CC=CC=C6N=C5C=5C=CC6=C3C4=5)=O)=O)C6=NC2=C1 YMEPVPIIHONYLV-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000005626 carbonium group Chemical group 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 229920003193 cis-1,4-polybutadiene polymer Polymers 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- HJXBDPDUCXORKZ-UHFFFAOYSA-N diethylalumane Chemical compound CC[AlH]CC HJXBDPDUCXORKZ-UHFFFAOYSA-N 0.000 description 1
- 235000019304 dilauryl thiodipropionate Nutrition 0.000 description 1
- PRAKJMSDJKAYCZ-UHFFFAOYSA-N dodecahydrosqualene Natural products CC(C)CCCC(C)CCCC(C)CCCCC(C)CCCC(C)CCCC(C)C PRAKJMSDJKAYCZ-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- DJLHXXNSHHGFLB-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate;n-methylmethanamine Chemical compound CNC.CCOC(=O)C(C)=C DJLHXXNSHHGFLB-UHFFFAOYSA-N 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- LCWMKIHBLJLORW-UHFFFAOYSA-N gamma-carene Natural products C1CC(=C)CC2C(C)(C)C21 LCWMKIHBLJLORW-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- HTENFZMEHKCNMD-UHFFFAOYSA-N helio brilliant orange rk Chemical compound C1=CC=C2C(=O)C(C=C3Br)=C4C5=C2C1=C(Br)C=C5C(=O)C1=CC=CC3=C14 HTENFZMEHKCNMD-UHFFFAOYSA-N 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- ADFPJHOAARPYLP-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;styrene Chemical compound COC(=O)C(C)=C.C=CC1=CC=CC=C1 ADFPJHOAARPYLP-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KVKFRMCSXWQSNT-UHFFFAOYSA-N n,n'-dimethylethane-1,2-diamine Chemical compound CNCCNC KVKFRMCSXWQSNT-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000191 poly(N-vinyl pyrrolidone) Polymers 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- 150000005691 triesters Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明1は、耐熱性に優れたフィルムホトレジスト積層
物に関する。さらに詳しくは、上層し。DETAILED DESCRIPTION OF THE INVENTION The present invention 1 relates to a film photoresist laminate having excellent heat resistance. For more details, please see above.
シストと下層レジストの密着性が良好な耐熱性フィルム
ホトレジスト積層物に関する。The present invention relates to a heat-resistant film photoresist laminate with good adhesion between cyst and lower resist layer.
従来、プリント配線基板業界において用いられているい
わゆるソルダーレジストは、プリント配線基板回路の半
田付は不要部分を隠蔽し、回路間の半田ブリッヂによる
短絡を防止する役割りを持つと同時に、不要な半田付着
による重量増加を防ぎ、また、その表面被膜は回路の絶
縁保護膜として使用されている。Conventionally, so-called solder resists used in the printed wiring board industry have the role of hiding unnecessary parts of printed wiring board circuits and preventing short circuits caused by solder bridges between circuits, and at the same time, they also serve to prevent unnecessary soldering. It prevents weight increase due to adhesion, and its surface coating is used as an insulating protective film for circuits.
このようなレジストとして、液状レジストとフィルムレ
ジストとが市販されている。前者は、エポキシ樹脂、エ
ポキシ−メラミン樹脂、エポキレー尿素樹脂、アルキッ
ド−メラミン樹脂などの熱硬化型樹脂や感光性のアクリ
レート変性樹脂などが用いられている。As such resists, liquid resists and film resists are commercially available. For the former, thermosetting resins such as epoxy resins, epoxy-melamine resins, epoxy urea resins, alkyd-melamine resins, photosensitive acrylate modified resins, etc. are used.
液状レジストは、厚塗りすることがむすかしく、また、
形成パターンの寸法精度が低いなどの欠点がある。しか
も、回路の間隔が狭くなると、回路間にレジ゛ストを塗
布することが困難となり、高密度のプリント配線基板に
用いることができない。Liquid resist is difficult to apply thickly, and
There are drawbacks such as low dimensional accuracy of the formed pattern. Moreover, as the spacing between the circuits becomes narrower, it becomes difficult to apply resist between the circuits, making it impossible to use it for high-density printed wiring boards.
一方、フィルムレジストは、例えば、日立化成工業(株
)の“日立感光性ソルダーレジストフィルムPhote
c 5R−1000”、デュポン社(Dupont)の
6す、;t、 ) y (Ris−ton) 730F
R”、ダイナケム社(Dynachem )の6ラミナ
ー(Lam1nar ) SM ’などが知られている
。これらは、いずれもアクリレート系重合体、アクリレ
ート系単量体、保存安定剤、染料および光重合開始剤か
らなるものであるが、これらの組成物にはアクリレート
系単量体が多量に混合されているために、それから作製
されるフィルムレジストは、柔らかく、且つ粘着性があ
り、ポリエステルフィルムなどの支持体フィルムとポリ
オレフィンフィルムなどの保護フィルムの間にはさんだ
構造体として取り扱わねばならない。また、これらの組
成物は、このような構造体にしても、長期間高温下に保
管すると、レジスト組成物が支持体フィルムの両側から
はみ出し、フィルムの口開き性および厚み寸法精度が悪
くなるという欠点がある。On the other hand, the film resist is, for example, "Hitachi Photosensitive Solder Resist Film Photo" manufactured by Hitachi Chemical Co., Ltd.
c 5R-1000”, DuPont 6s;t, ) y (Ris-ton) 730F
R'', Dynachem's 6-laminar SM', etc. are known.These are all made from acrylate polymers, acrylate monomers, storage stabilizers, dyes, and photopolymerization initiators. However, since these compositions contain a large amount of acrylate monomer, the film resists produced from them are soft and sticky, and are difficult to bond to support films such as polyester films. The resist composition must be handled as a structure sandwiched between a protective film such as a polyolefin film and a protective film such as a polyolefin film.Also, even in such a structure, if stored at high temperatures for a long period of time, the resist composition will break down into the support. This has the disadvantage that it protrudes from both sides of the film, resulting in poor opening properties and thickness dimensional accuracy of the film.
さらに感光層が粘着性であるため、画像焼付時にホトマ
スクを密着させることができず、支持体フィルムを介し
て焼付けねばならないので、鮮明な画像が得にくいばか
りでなく、光硬化後のフィルムが脆く、画像が欠けやす
いなどの欠点を有している。しかも、ソルダーレジスト
としてもつとも重要な耐熱性が不十分であるという致命
的な欠点がある。Furthermore, since the photosensitive layer is sticky, the photomask cannot be placed in close contact with the photomask during image printing, and printing must be done through a support film, which not only makes it difficult to obtain clear images, but also makes the film brittle after photocuring. , it has drawbacks such as the image being easily chipped. Furthermore, it has the fatal drawback of insufficient heat resistance, which is an important property for solder resists.
発明者らは、これら市販のフィルムホトレジストの欠点
を改良すべく鋭意検討した結果、さきに、(a)特定量
のモノオレフィン系不飽和化合物の重合体もしくは共重
合体、(b)特定量の分子内に光重合性二重結合を少な
くとも2個以上有する多官能光重合性不飽和化合物、(
e)光架橋剤、光増感剤および光重合開始剤から選ばれ
た少くとも1種を必須成分とする組成物からなる上層レ
ジストを、ブタジェン系重合体の環化物を主成分とする
組成物からなる下層レジスト上に積層した構造とするこ
とにより、上記の欠点が解消されることを見い出した。As a result of intensive studies to improve the shortcomings of these commercially available film photoresists, the inventors first discovered that (a) a specific amount of a polymer or copolymer of a monoolefinically unsaturated compound, (b) a specific amount of A polyfunctional photopolymerizable unsaturated compound having at least two or more photopolymerizable double bonds in the molecule, (
e) An upper layer resist consisting of a composition containing at least one selected from a photocrosslinking agent, a photosensitizer, and a photopolymerization initiator as an essential component, and a composition whose main component is a cyclized product of a butadiene-based polymer. It has been found that the above-mentioned drawbacks can be overcome by forming a structure in which the resist layer is laminated on a lower resist layer consisting of the following.
しかし、このフィルムホトレジストは、上層レジストと
下層レジストとの密着性が乏しく、フィルムホトレジス
ト製造時に用いた支持体フィルムおよび保存のために積
層した保護フィルムを剥離しながらこれを固体表面にラ
ミネートする場合、使用条件を誤まると上層レジストと
下層レジストとの間で層間剥離を起こすおそれがあるこ
とが判明した。However, this film photoresist has poor adhesion between the upper layer resist and the lower layer resist, and when laminating it on a solid surface while peeling off the support film used in producing the film photoresist and the protective film laminated for storage, It has been found that if the usage conditions are incorrect, there is a risk of delamination between the upper resist layer and the lower resist layer.
そこで発明者らは、さらに鋭意研究を重ねた結果、前記
フィルムホトレジストに粘着性付与剤を添加することに
より、この問題を解決できることを知見し本発明に到達
した。すなわち、本発明の要旨は、(A)ブタジェン系
重合体の環化物を必須成分とする組成物からなる下層レ
ジストと、(B)(a)モノオレフィン系不飽和化合物
の重合体もしくは共重合体100重量部、(b)分子内
に光重合性二重結合を少なくとも2個以上有する多官能
光重合性不飽和化合物5〜100重量部、(c)光架橋
剤、光増感剤および光重合開始剤より選ばれた少なくと
も1種を含む組成物からなる上層レジストとで構成され
るフィルムホトレジスト積層物の下層レジストおよび/
または上層レジストに粘着性付与剤をブタジェン系重合
体の環化物またはモノオレフィン系不飽和化合物の重合
体もしくは共重合体100重量部に対して0.1〜50
重量部の割合で配合することを特徴とする耐熱性フィル
ムホトレジスト積層物にある。As a result of further extensive research, the inventors discovered that this problem could be solved by adding a tackifier to the film photoresist, and thus arrived at the present invention. That is, the gist of the present invention is to provide (A) a lower resist composed of a composition containing a cyclized product of a butadiene polymer as an essential component, and (B) a polymer or copolymer of (a) a monoolefinically unsaturated compound. 100 parts by weight, (b) 5 to 100 parts by weight of a polyfunctional photopolymerizable unsaturated compound having at least two or more photopolymerizable double bonds in the molecule, (c) photocrosslinking agent, photosensitizer, and photopolymerization A lower layer resist of a film photoresist laminate and/or an upper layer resist made of a composition containing at least one type of initiator.
Alternatively, add a tackifier to the upper resist layer in an amount of 0.1 to 50 parts by weight per 100 parts by weight of the cyclized product of a butadiene polymer or the polymer or copolymer of a monoolefinic unsaturated compound.
The heat-resistant film photoresist laminate is characterized in that it is blended in parts by weight.
上記粘着性付与剤は、下層レジスト中に添加するのが、
最も効果的である。しかし、上層レジスト中に添加して
も十分目的を達することができる。したがって、上層レ
ジストおよび下層レジストの両方に粘着性付与剤を添加
しても何等差支えない。The above tackifier is added to the lower resist layer as follows:
most effective. However, the purpose can be sufficiently achieved even if it is added to the upper resist layer. Therefore, there is no problem even if the tackifier is added to both the upper resist layer and the lower resist layer.
本発明において、粘着性付与剤としては、ロジンおよび
ダンマルなどの天然樹脂、重合ロジンおよび部分水添ロ
ジンなどの変性ロジン、グリセリンエステルロジンおよ
びペンタエリスリットエステルロジンなどのロジンおよ
び変性ロジンの誘導体、α−ピネンまたはβ−ピネンの
重合体ならびにジペンテン重合体などのポリテルペン系
樹脂、テルペン−フェノール共重合体およびα−ピネン
−フェノール共重合体などのテルペン変性重合体、オレ
フィンおよびジオレフィン重合体などの脂肪族系炭化水
素樹脂、シクロペンタジェン樹脂、芳香族系石油樹脂、
アルキルフェノールおよび変性フェノールなどのフェノ
ール系樹i、アルキルフェノール−アセチレン系樹脂、
スチレン系樹脂、キシレン樹脂、クマロン−インデン樹
脂、ビニルトルエン−α−メチルスチレン共重合体樹脂
などが挙げられる。In the present invention, tackifiers include natural resins such as rosin and dammar, modified rosins such as polymerized rosins and partially hydrogenated rosins, derivatives of rosins and modified rosins such as glycerin ester rosins and pentaerythritol ester rosins, α - polyterpene resins such as pinene or β-pinene polymers and dipentene polymers, terpene modified polymers such as terpene-phenol copolymers and α-pinene-phenol copolymers, fats such as olefin and diolefin polymers; family hydrocarbon resins, cyclopentadiene resins, aromatic petroleum resins,
Phenolic resins such as alkylphenols and modified phenols, alkylphenol-acetylene resins,
Examples include styrene resin, xylene resin, coumaron-indene resin, and vinyltoluene-α-methylstyrene copolymer resin.
これら粘着性付与剤のうち、上層レジストまたは下層レ
ジストとの相溶性に特に優れる点から、官能基を持たず
、しかもイソプレン骨格を有しない粘着性付与剤、例え
ばスチレン系樹脂、クマロン−インデン樹脂、芳香族系
石油樹脂などが好ましく、特にクマロン−インデン樹脂
、芳香族系石油樹脂が好ましい。これらの粘着性付与剤
は、単独で使用することができ、また2種以上混合して
使用してもよい。Among these tackifiers, tackifiers that do not have a functional group and do not have an isoprene skeleton, such as styrene resin, coumaron-indene resin, Aromatic petroleum resins are preferred, and coumaron-indene resins and aromatic petroleum resins are particularly preferred. These tackifiers can be used alone or in combination of two or more.
本発明において、上記粘着性付与剤は、ブタジェン系重
合体の環化物またはモノオレフィン系不飽和化合物の重
合体または共重合体100重量部に対して0.1〜50
重量部、好ましくは0.5〜30重量部を下層レジスト
または上層レジストに配合する。粘着性付与剤の配合量
が0.1重量部未満では、層間剥離防止の効果が少なく
、また、添加量が50重量部を越えると、耐熱性、電気
的特性などのソルダーレジストとしての性能が低下する
。In the present invention, the tackifier is 0.1 to 50 parts by weight per 100 parts by weight of the cyclized product of a butadiene polymer or the polymer or copolymer of a monoolefinically unsaturated compound.
Parts by weight, preferably 0.5 to 30 parts by weight, are added to the lower resist or upper resist. If the amount of the tackifier added is less than 0.1 part by weight, the effect of preventing delamination will be small, and if the amount added exceeds 50 parts by weight, the performance as a solder resist such as heat resistance and electrical properties will deteriorate. descend.
本発明に用いる下層レジストは、好ましくは、(1)ブ
タジェン系重合体環化物および(2)光架橋剤、光増感
剤および光重合開始剤より選ばれた少なくとも一種を加
えてなる組成物をフィルム状に形成したフィルムホトレ
ジストである。しかし、ブタジェン系重合体環化物を主
成分とするフィルムホトレジストならば、と(に上記に
限定されるものではない。The lower resist used in the present invention preferably contains a composition containing at least one selected from (1) a cyclized butadiene-based polymer and (2) a photocrosslinking agent, a photosensitizer, and a photopolymerization initiator. This is a film photoresist formed into a film. However, if it is a film photoresist mainly composed of a cyclized butadiene-based polymer, it is not limited to the above.
上記ブタジェン系重合体環化物は特に限定されないが、
原料であるブタジェン重合体もしくはブタジェン共重合
体の分子量、ブタジェン系重合体環化物の環化率および
極限粘度〔η〕が特定の範囲内にあることが望ましい。The above-mentioned butadiene-based polymer cyclized product is not particularly limited, but
It is desirable that the molecular weight of the butadiene polymer or butadiene copolymer as a raw material, the cyclization rate and the intrinsic viscosity [η] of the butadiene-based polymer cyclized product are within specific ranges.
なお、上記ブタジェン共重合体の共重合単量体としては
、スチレン、α−メチルスチレンなどのビニル芳香族化
合物、エチレン、プロピレンなとのモノオレフィン化合
物などを挙げることができる。In addition, examples of the copolymerized monomer of the butadiene copolymer include vinyl aromatic compounds such as styrene and α-methylstyrene, and monoolefin compounds such as ethylene and propylene.
すなわち、原料であるブタジェン重合体もしくはブタジ
ェン共重合体の重量平均分子量は30.000〜300
、000のものがよく、分子量が30,000未満で
はフィルムとして使用したとき、光硬化により得られる
画像が脆くなる欠点があり、また分子量が300 、0
00を越えるとフィルムを基板上ヘラミネートするとき
高温を必要とし、そのため、フィルムが熱かぶりを起す
場合がある。That is, the weight average molecular weight of the raw material butadiene polymer or butadiene copolymer is 30.000 to 300.
, 000 is preferred; if the molecular weight is less than 30,000, when used as a film, the image obtained by photocuring will be brittle;
If it exceeds 00, a high temperature is required when laminating the film on the substrate, which may cause thermal fogging of the film.
またブタジェン系重合体環化物の3Ji(ヒ率をま40
〜70チの範囲が良く、環化率が40−未満ではフリジ
エン系重合体環化物がコ゛ム的性質を示し、保管中に支
持フィルムの両側からはみ出す場合があり、環化率が7
0q6を越えるとフィルムの可撓性が小さくなり、とく
に銅貼積層板へのラミネートに不適当になる。゛
さらにAタジエン系重合体猿化物の極限粘度ルムおよび
その光硬化部が脆く使用に耐えず、〔η))ivx’−
、が0.7を越えるとフィルムの厚みのムラが大きくな
る欠点がある。In addition, 3Ji of butadiene-based polymer cyclized product (with a ratio of 40
A range of 70 to 70 is good; if the cyclization rate is less than 40, the fridien-based polymer cyclized product exhibits comb-like properties and may protrude from both sides of the support film during storage, and if the cyclization rate is less than 70,
If it exceeds 0q6, the flexibility of the film decreases, making it particularly unsuitable for lamination on copper-clad laminates.゛Furthermore, the intrinsic viscosity lume of A-tadiene-based polymer monkey compound and its photocured portion are brittle and cannot withstand use, [η))ivx'-
, exceeds 0.7, there is a drawback that the film thickness becomes uneven.
上記範囲のブタジェン系重合体環化物の中でも、環化物
の環化率(DC)と原料であるブタジェン重合体もしく
はブタジェン共重合体の分子量(MW)が、下記の(I
)〜(II)式を満足するものを用いた場合には、下層
レジストの耐熱性および保存安定性がさらに良好になる
。Among the butadiene-based polymer cyclized products within the above range, the cyclization rate (DC) of the cyclized product and the molecular weight (MW) of the raw material butadiene polymer or butadiene copolymer are as follows (I
) to (II), the heat resistance and storage stability of the lower resist will be even better.
上記ブタジェン系重合体環化物は、ブタジェン重合体も
しくはブタジェン共−合体を芳香族炭化水素などの溶剤
に溶解したのち、有機アルミニウム化合物と有機ハロゲ
ン化物などの触媒で環化することにより得られ、具体的
には特公昭48−29879 、同53−1318.
特開昭48−66684などに記載されている方法な
どにより得られる。The above-mentioned butadiene-based polymer cyclized product is obtained by dissolving a butadiene polymer or a butadiene copolymer in a solvent such as an aromatic hydrocarbon, and then cyclizing it with an organoaluminum compound and a catalyst such as an organohalide. Specifically, Special Publications No. 48-29879 and No. 53-1318.
It can be obtained by the method described in JP-A-48-66684 and the like.
上記のブタジェン系重合体環化物に対して好適に添加さ
れる光架橋剤、光増感剤または光重合開始剤としては、
たとえば次のようなものが挙げられる。光架橋剤として
は2,6−ビス(4′−アジドベンザル)シクロヘキサ
ノン、ビス(4−アジドベンザル)アセトン、4,4′
−ジアジドスチルベン、p−アジドベンザルアセトフェ
ノンのよ5なアジド化合物;光増感剤としては、p、p
’−:Fトラメチルジアミノベンゾフェノン、ベンゾフ
ェノン、アントラキノン、1.2−ベンズアントラキノ
ン、2−メチルアントラキノン、ビオアントロンのよう
なカルボニル化合物、5−ニトロアセナフテン、α−ニ
トロナフタレン、2−ニトロフルオレンのようなニトロ
化合物、2.4−ジメチルチオキサントンのようなチオ
キサントン化合物;光重合開始剤としてはベンゾイン、
ヘンツインメチルエーテル、ペンソインイソグロビルエ
ーテル、ベンゾインジメチルケタールなどのベンゾイン
系化合物、α、α′−ジメトキシα−フェニルアセトフ
ェノン、α、α′−ジェトキシアセトフェノンなどのア
セトフェノン化合物、ジフェニルジスルフィドなどのイ
オウ化合物を挙げることができる。これらの化合物は、
ブタジェン系重合体環化物100重量部に対し、好まし
くは0.1〜10重量部使用するが、0.5〜5重量部
使用するときに最大の効果を示、す。The photocrosslinking agent, photosensitizer, or photopolymerization initiator suitably added to the above-mentioned butadiene-based polymer cyclized product includes:
Examples include: As photocrosslinking agents, 2,6-bis(4'-azidobenzal)cyclohexanone, bis(4-azidobenzal)acetone, 4,4'
-Azide compounds such as diazidostilbene and p-azidobenzalacetophenone; as photosensitizers, p, p
'-: F tramethyldiaminobenzophenone, benzophenone, anthraquinone, 1,2-benzanthraquinone, 2-methylanthraquinone, carbonyl compounds such as bioanthrone, 5-nitroacenaphthene, α-nitronaphthalene, 2-nitrofluorene, etc. nitro compounds, thioxanthone compounds such as 2,4-dimethylthioxanthone; as photopolymerization initiators, benzoin,
Benzoin compounds such as hentin methyl ether, pensoin isoglobil ether, benzoin dimethyl ketal, acetophenone compounds such as α,α′-dimethoxyα-phenylacetophenone, α,α′-jethoxyacetophenone, and sulfur such as diphenyl disulfide. Compounds can be mentioned. These compounds are
It is preferably used in an amount of 0.1 to 10 parts by weight per 100 parts by weight of the cyclized butadiene polymer, but the maximum effect is obtained when it is used in an amount of 0.5 to 5 parts by weight.
さらに下層レジスNCは保存安定剤を添加するのが好ま
しい。保存安定剤としては、たとえば2,2′−メチレ
ンビス(4−メチル−6−t−プチルフェノール)、2
.2’−メチレンビス(4−エチル−6−t−ブチルフ
ェノール)、2,6−ジーt−ブチル−p−クレゾール
のようなアルキルフェノール系化合物;フェニル−β−
ナフチルアミン、ジフェニル−p−フェニレンジアミン
、フェニルイソプロピルフェニレンジアミンなどのよう
な芳香族アミン系化合物;ジラウリルチオジプロピオネ
ート、4,4′−チオビス(6−t−ブチル−m−クレ
ゾール)、2(3゜5−ジ−t−ブチル−4−ヒドロキ
シアニリノ)−4,6−ビス(N−オクチルチオ)−1
,3,5−トリアジンなどのような硫黄系化合物などが
あり、これらは、ブタジェン系重合体環化物100重量
部に対して0.1〜5重量部添加するのが好ましい。Furthermore, it is preferable to add a storage stabilizer to the lower resist NC. Examples of storage stabilizers include 2,2'-methylenebis(4-methyl-6-t-butylphenol), 2,2'-methylenebis(4-methyl-6-t-butylphenol),
.. Alkylphenol compounds such as 2'-methylenebis(4-ethyl-6-t-butylphenol), 2,6-di-t-butyl-p-cresol; phenyl-β-
Aromatic amine compounds such as naphthylamine, diphenyl-p-phenylenediamine, phenylisopropylphenylenediamine, etc.; dilaurylthiodipropionate, 4,4'-thiobis(6-t-butyl-m-cresol), 2( 3゜5-di-t-butyl-4-hydroxyanilino)-4,6-bis(N-octylthio)-1
, 3,5-triazine, etc., and these are preferably added in an amount of 0.1 to 5 parts by weight per 100 parts by weight of the cyclized butadiene polymer.
上層レジストに使用するモノオレフィン系不飽和化合物
の重合体もしくは共重合体(以下オレフィン系重合体と
記す)は、通常の重合反応などで容易に製造することが
できる。これらのものの分子量は特に制限はないが、常
温で液状であるものは、フィルムレジストになりにくい
欠点があること、極端に分子量の高いものは、現像液に
対して溶解が困難となるため、レジストとした場合に高
解像度が得にくいことなどの理由から好ましくない。好
まし入・重量平均分子量は30,000〜1 、000
、000、特に50,000〜800,000である
。The polymer or copolymer of a monoolefin-based unsaturated compound (hereinafter referred to as an olefin-based polymer) used in the upper resist layer can be easily produced by a conventional polymerization reaction. There is no particular restriction on the molecular weight of these substances, but those that are liquid at room temperature have the disadvantage of being difficult to form into a film resist, and those with extremely high molecular weights are difficult to dissolve in a developer, so they cannot be used as resists. This is not preferable because it is difficult to obtain high resolution in this case. Preferably, weight average molecular weight is 30,000 to 1,000
, 000, especially from 50,000 to 800,000.
本発明に用いられるオレフィン系重合体としては、たと
えばポリスチレン、ポリα−メチルスチレン、ポリ(ス
チレン−α−メチルスチレン)などのような芳香族炭化
水素系重合体、ポリ塩化ビニル、ポリ塩化ビニリデン、
ポリ(塩化ビニル−塩化ビニリ“デン)などのハロゲン
化炭化水素系重合体、ポリ酢酸ビニル、ポリプロピオン
酸ビニル、ポリビニルメチルエーテルなどのオキシエス
テル系重合体、ポリアクリル酸、ポリメタクリル酸、ポ
リアクリル酸メチル、ポリメタクリル酸メチル、ポリ(
メタクリル酸メチル−スチレン)などのアクリル酸もし
くはメタクリル酸またはこれらのエステル類からなるア
クリル系重合体、ポリアクリロニトリル、ポリアクリル
アミド、ポリN−ビニルカルバゾール、ポリN−ビニル
ピロリドンなどの含窒素系重合体、ポリエチレン、ポリ
プロピレン、ポリ(エチレン−プロピレン)などを挙げ
ることができる。これらのうち好ましいものはアクリル
系重合体であり、とくに好ましくはポリメタクリル酸メ
チルまたはメタクリル酸メチルを50重量−以上共重合
した共重合体である。Examples of the olefin polymer used in the present invention include aromatic hydrocarbon polymers such as polystyrene, polyα-methylstyrene, poly(styrene-α-methylstyrene), polyvinyl chloride, polyvinylidene chloride,
Halogenated hydrocarbon polymers such as poly(vinyl chloride-vinylidene chloride), oxyester polymers such as polyvinyl acetate, polyvinyl propionate, polyvinyl methyl ether, polyacrylic acid, polymethacrylic acid, polyacrylic Methyl acid, polymethyl methacrylate, poly(
Acrylic polymers made of acrylic acid or methacrylic acid or esters thereof such as methyl methacrylate-styrene); nitrogen-containing polymers such as polyacrylonitrile, polyacrylamide, polyN-vinylcarbazole, and polyN-vinylpyrrolidone; Examples include polyethylene, polypropylene, poly(ethylene-propylene), and the like. Among these, preferred are acrylic polymers, particularly preferred are polymethyl methacrylate or a copolymer obtained by copolymerizing 50 weight or more of methyl methacrylate.
オレフィン系重合体と組合せる多官能光重合性不飽和化
合物としては、分子内圧光重合性二重結合を少なくとも
2個以上有するものであり、たとえばエチレングリコー
ルジアクI)L/−)、エチレングリコールジメタクリ
レートなどのアクリル酸やメタクリル酸のジエステル、
トリメチロールエタントリメタクリレート、トリメチロ
ールエタントリメタクリレートなどのアクリ尤酸やメタ
クリル酸のトリエステル、ペンタエリスリトールテトラ
アクリレートなどのアクリル酸やメタクリル酸のテトラ
エステルを挙げることができる。また、ビスフェノール
Aのアルキレンオキシド付加体のアクリル酸やメタクリ
ル酸のエステル、たとえば2,2−ビス(4−アクリロ
キシエトキシフェニル)プロパン、2,2−ビス(4−
メタクリロキシエトキシフェニル)プロパン、および環
状脂肪族エポキシ樹脂やビスフエ・ノールA−エピクロ
ルヒドリン系のエポキシ樹脂などのエポキシ基を少なく
とも2個含有する化合物とアクリル酸またはメタクリル
酸を反応させた化合物などを挙げることができる。The polyfunctional photopolymerizable unsaturated compound to be combined with the olefinic polymer is one having at least two or more intramolecular pressure photopolymerizable double bonds, such as ethylene glycol diac I) L/-), ethylene glycol diesters of acrylic acid and methacrylic acid, such as dimethacrylate;
Triesters of acrylic acid and methacrylic acid such as trimethylolethane trimethacrylate and trimethylolethane trimethacrylate, and tetraesters of acrylic acid and methacrylic acid such as pentaerythritol tetraacrylate. Also, esters of acrylic acid or methacrylic acid of alkylene oxide adducts of bisphenol A, such as 2,2-bis(4-acryloxyethoxyphenyl)propane, 2,2-bis(4-
Examples include compounds obtained by reacting acrylic acid or methacrylic acid with compounds containing at least two epoxy groups, such as methacryloxyethoxyphenyl) propane, and cycloaliphatic epoxy resins and bisphene-nol A-epichlorohydrin-based epoxy resins. Can be done.
しかし、フィルムホトレジストの粘着性をより低減させ
るために、光重合性不飽和化合物は分子内に光重合性二
重結合を少なくとも3個以上有するものが好ましく、と
くにトリメチロールプロパントリアクリレート、トリメ
チロールプロパントリメタクリレートなどのアクリル酸
もしくはメタクリル酸のトリエステル、テトラメチロー
ルメタンテトラアクリレート、テトラメチロールメタン
テトラメタクリレートなどのアクリル酸もしくはメタク
リル酸のテトラエステルが好ましい。However, in order to further reduce the tackiness of the film photoresist, it is preferable that the photopolymerizable unsaturated compound has at least three or more photopolymerizable double bonds in the molecule, particularly trimethylolpropane triacrylate, trimethylolpropane Triesters of acrylic acid or methacrylic acid such as trimethacrylate, tetraesters of acrylic acid or methacrylic acid such as tetramethylolmethanetetraacrylate, and tetramethylolmethanetetramethacrylate are preferred.
これらの光重合性不飽和化合物は、オレフィン系重合体
100重量部に対して、5〜100重量部、好ましくは
20〜30重量部使用する。These photopolymerizable unsaturated compounds are used in an amount of 5 to 100 parts by weight, preferably 20 to 30 parts by weight, based on 100 parts by weight of the olefin polymer.
さらに、上層レジ2トには、耐熱性を向上させるために
下記一般式で示すアミン化合物2−
R−N −R3
(式中R1、R2,R3は同じでも、また異っていても
よく、各々は水素、アルキル基であるか、またはそれら
の2個以上が一体となもて、アルキレン基の形の縮合環
を形成してもよいが、R1,R2、R3の全てが同時に
水素の場合を除く。)
を添加するのが好ましい。Furthermore, in order to improve heat resistance, the upper resist 2 contains an amine compound 2-R-N-R3 (wherein R1, R2, and R3 may be the same or different, Each is hydrogen or an alkyl group, or two or more of them may be joined together to form a fused ring in the form of an alkylene group, but if R1, R2, and R3 are all hydrogen at the same time ) is preferably added.
上記アミン化合物としては、第1級、第2級、および第
3級のモノアミンやポリアミンを挙げることかできる。Examples of the above amine compounds include primary, secondary, and tertiary monoamines and polyamines.
また、同一分子中に第1級、第2級、および第3級のう
ちから選ばれた2種以上のアミノ基を有するポリアミン
も用いられる。モノアミンとしては、ブトキシプロピル
アミン、2−エチルヘキシルアミン、ラウリルアミン、
エタノールアミンなどの第1級アミン、ジブチルアミン
、ジアリルアミン、ジー2−エチルヘキシルアミンなど
の第2級アミン、トリブチルアミン、トリエタノールア
ミン、トリー2−エチルヘキシルアミンなどの第3級ア
ミンが挙げられる。ポリアミンとしては、トリメチレン
ジアミン、ヘキサメチレンジアミン、などの第1級ジア
ミン、N 、 N’−ジメチルエチレンジアミン、N
、 N’−ジプチルエチレンジアミンなどの第2級ジア
ミン、トリエチレンジアミン、N。Also used are polyamines having two or more types of amino groups selected from primary, secondary, and tertiary in the same molecule. Monoamines include butoxypropylamine, 2-ethylhexylamine, laurylamine,
Examples include primary amines such as ethanolamine, secondary amines such as dibutylamine, diallylamine, and di-2-ethylhexylamine, and tertiary amines such as tributylamine, triethanolamine, and tri-2-ethylhexylamine. Examples of polyamines include primary diamines such as trimethylene diamine and hexamethylene diamine, N,N'-dimethylethylene diamine, and N'-dimethylethylene diamine.
, a secondary diamine such as N'-diptylethylenediamine, triethylenediamine, N.
N+N’、N’−fトラメチルエチレンジアミン、N。N+N', N'-f tramethylethylenediamine, N.
N 、 N’ 、 N’−テトラアリル−1,4−ジア
ミノ)ブタンなどの第3級ジアミンが挙げられる。また
、ジエチレントリアミンなどのトリアミン、トリエチレ
ンテトラミンなどのテトラアミン、α、α′−ジピリジ
ル、1,4−ジアザビシクロ(2,2,2)オクタン、
ヘキサメチレンテトラミン、イミダゾール、ベンゾトリ
アゾールなどの複素環式アミン化合物も挙げられる。さ
らに、ジメチルアミンエチルメタクリラートジエチルア
ミノエチルメタクリラートなどのモノマータイプのアミ
ン化合物も使用することもできる。Examples include tertiary diamines such as N, N', N'-tetraallyl-1,4-diamino)butane. Additionally, triamines such as diethylenetriamine, tetraamines such as triethylenetetramine, α,α′-dipyridyl, 1,4-diazabicyclo(2,2,2)octane,
Also included are heterocyclic amine compounds such as hexamethylenetetramine, imidazole, and benzotriazole. Furthermore, monomeric type amine compounds such as dimethylamine ethyl methacrylate and diethylaminoethyl methacrylate can also be used.
これらのうち好ましくは、モノアミンの第2級、3Rア
ミンであり、とくに好ましくは、モノアミンでは、第3
級アミン、ポリアミンでは第3級ジアミンである。これ
らアミン化合物は、単独で使用できるばかりでな(,2
種以上混合して使用してもよい。Among these, preferable are secondary and 3R amines of monoamines, and particularly preferable are tertiary amines of monoamines.
Class amines and polyamines are tertiary diamines. These amine compounds can not only be used alone (,2
You may use a mixture of more than one species.
上記アミン化合物は、オレフィン系重合体100重量部
に対して、好ましくは5〜50重量部、特に好ましくは
10〜30重量部使用する。The above amine compound is preferably used in an amount of 5 to 50 parts by weight, particularly preferably 10 to 30 parts by weight, per 100 parts by weight of the olefin polymer.
アミン化合物の添加量が5重量部未満では、耐熱性の向
上に効果がない。また、添加量が50重量部を越えると
、レジスト自身の感度が低下する。If the amount of the amine compound added is less than 5 parts by weight, there is no effect on improving heat resistance. Furthermore, if the amount added exceeds 50 parts by weight, the sensitivity of the resist itself decreases.
上層レジストに使用する光架橋剤、光増感剤または光重
合開始剤は、前記の下層レジストに使用するものと同じ
ものを使用できる。すなわち、アジド化合物、カルボニ
ル化合物、ニトロ化合物、チオキサントン系化合物、ベ
ンゾイン系化合物、アセトフェノン化合物、イオウ化合
物などを挙げることができ、これらをオレフィン系重合
体100重量部に対して、0.1〜10重量部使用する
ことが好ましい。The photocrosslinking agent, photosensitizer, or photopolymerization initiator used in the upper resist layer can be the same as that used in the lower resist layer. That is, examples include azide compounds, carbonyl compounds, nitro compounds, thioxanthone compounds, benzoin compounds, acetophenone compounds, sulfur compounds, etc., and these can be added in an amount of 0.1 to 10 parts by weight per 100 parts by weight of the olefin polymer. It is preferable to use 1 part.
上層レジストにも保存安定剤を添加するのが好ましく、
下層レジストに添加する保存安定剤と同様のものを使用
することができる。その添加量は、オレフィン系重合体
100重量部に対し、0、1〜5重量部が好ましい。It is preferable to add a storage stabilizer to the upper layer resist as well.
Storage stabilizers similar to those added to the underlying resist can be used. The amount added is preferably 0.1 to 5 parts by weight per 100 parts by weight of the olefin polymer.
本発明のフィルムホトレジスト積層物は、用途によって
は形成された画像を目視検査することがあるので、見や
すくするためレジストフィルム自体が着色されているこ
とが望ましい。このため、下層レジストおよび/または
上層レジストを着色しておくとよい。Depending on the use of the film photoresist laminate of the present invention, the formed image may be visually inspected, so it is desirable that the resist film itself is colored to make it easier to see. For this reason, it is preferable to color the lower layer resist and/or the upper layer resist.
着色は染料または顔料を用いて行うことができる。染料
、顔料は特に限定されないが、現像後に残る光硬化部の
画像は着色していることが必要である。そのため、一般
に使用されている現像液である1、1.1−)リクロル
エタンのようなハロゲン化炭化水素で抽出されにくいも
のであることが好ましく、これらの現像液に不溶性のも
のが好適に使用される。このようなものとして、C,1
,Pigment Orange 14 (C,1,2
1165)C0工、pigment Red 13 (
C,1,12395)のようなアゾ系化合物、C,1,
Pigment Blue 15 (C,174160
)C,1,Pigment Green 7 (C,1
,74260) のようなフタロシアニン系化合物、C
,1,Vat Orange 3(C,1,59300
)のようなアントラキノン系化合物、C,1,Vat
Orange 7 (C,1,71105)、C,1,
Vat Red15 (C,I 71100 )のよう
なペリノン系化合物、C,1,VatVioret 3
(C,1,73395)のようなインジーf/(ド系
化合物、C,1,Pigment Red 81 (C
。Coloring can be done using dyes or pigments. Although the dye and pigment are not particularly limited, it is necessary that the image of the photocured portion remaining after development is colored. Therefore, it is preferable to use a compound that is difficult to extract with a halogenated hydrocarbon such as 1,1.1-)lichloroethane, which is a commonly used developer, and a compound that is insoluble in these developers is preferably used. Ru. As such, C,1
, Pigment Orange 14 (C, 1, 2
1165) C0 engineering, pigment Red 13 (
C,1,12395), C,1,
Pigment Blue 15 (C, 174160
)C,1,Pigment Green 7 (C,1
, 74260), phthalocyanine compounds such as C
,1,Vat Orange 3(C,1,59300
), anthraquinone compounds such as C,1,Vat
Orange 7 (C,1,71105),C,1,
Perinone compounds such as Vat Red15 (C,I 71100), C,1, VatVioret 3
(C, 1,73395), C, 1, Pigment Red 81 (C
.
1、45160 )のようなカルボニウム系化合物、C
0■、■1olet 19 (C,1,46500)の
ようなキナクリドン系化合物などを挙げることができる
。これらの染料、顔料は好ましくは下層レジストのフタ
ジエン系重合体環化物または上層レジストのオレフィン
系重合体100重量部に対して0.01〜3重量部添加
して使用される。染料および/または顔料の添加量が3
重量部を越えると染料または顔料による光の吸収が大き
く、十分な光硬化が起こりにくい。またo、oi重量部
未満では、着色の効果が十分でない。1,45160), carbonium-based compounds such as C
Examples include quinacridone compounds such as 0■, 1olet 19 (C, 1,46500). These dyes and pigments are preferably added in an amount of 0.01 to 3 parts by weight per 100 parts by weight of the cyclized phtadiene polymer of the lower resist layer or the olefin polymer of the upper resist layer. The amount of dye and/or pigment added is 3
If the amount exceeds 1 part by weight, light absorption by the dye or pigment is large and sufficient photocuring is difficult to occur. Furthermore, if the amount is less than o or oi parts by weight, the coloring effect will not be sufficient.
本発明のフィルムホトレジスト積層物は、次のようにし
て製造される。たとえば、(1)フタジエン系重合体環
化物、(2)粘着性付与剤、(3)光架橋剤、光増感剤
および光重合開始剤の少くとも1種および必要に応じて
使用される他の添加剤を、トルエン、キシレン、テトラ
クロルエチレンなどの溶剤を用いて均一な組成物とした
ものを、ポリテトラフルオロエチレンなどの支持体フィ
ルム、あるいはポリエチレンフイルム、ポリエチレンテ
レフタレートフィルムその他のプラスチックフィルムま
たは紙などに離型処理を施した支持体フィルムの上に塗
布、乾燥し、膜厚5〜200μmのフイルムトスル。The film photoresist laminate of the present invention is manufactured as follows. For example, at least one of (1) a cyclized phtadiene polymer, (2) a tackifier, (3) a photocrosslinking agent, a photosensitizer, and a photoinitiator, and others used as necessary. Additives made into a uniform composition using a solvent such as toluene, xylene, or tetrachloroethylene can be used as a support film such as polytetrafluoroethylene, or as a polyethylene film, polyethylene terephthalate film, or other plastic film or paper. A film tossle with a film thickness of 5 to 200 μm is coated on a support film that has been subjected to a release treatment and dried.
次いで、前記下層レジスト上に、(a)オレフィン系重
合体、(b)光重合性不飽和化合物、(e)光架橋剤、
光増感剤および光重合開始剤の少な(とも1種および必
要に応じて使用される他の添加剤を、トルエン、メチル
エチルケトン、酢酸エチル、トリクロルエチレンなどの
溶媒に溶解して均一な組成物としたものを塗布、乾燥し
、膜厚が5〜200μmの上層レジストを形成し、必要
に応じてさらに保護フィルムをラミネートする。Next, on the lower resist layer, (a) an olefin polymer, (b) a photopolymerizable unsaturated compound, (e) a photocrosslinking agent,
A homogeneous composition is prepared by dissolving a small amount of photosensitizer and photopolymerization initiator (both one type and other additives used as necessary) in a solvent such as toluene, methyl ethyl ketone, ethyl acetate, or trichlorethylene. This is coated and dried to form an upper layer resist having a film thickness of 5 to 200 μm, and a protective film is further laminated as required.
このフィルムホトレジスト積層物の残存溶剤量は、1重
量−以下におさえることが望ましく、またフィルムレジ
スト積層物としての膜厚は、15〜300μmが好まし
い。The amount of residual solvent in this film photoresist laminate is desirably kept at 1 weight or less, and the film thickness of the film resist laminate is preferably 15 to 300 μm.
本発明のフィルムホトレジスト積層物は、支持体フィル
ムを剥したのち、あるいは支持体と保護フィルムを剥し
たのち、下層レジストが被ラミネート物に接するように
重ね、フィルムホトレジスト積層物が変質せずしかも軟
化する温度、すなわち50〜180C1好ましくは80
〜160Cに加熱することにより、容易にラミネートす
ることができる。また被ラミネート物を50〜180C
,好ましくは80〜160Cに加熱しておき、次にフィ
ルムホトレジスト積層物の下層レジストが被ラミネート
物に接するように重ね合わせゴムローラーで加圧するこ
とによってもラミネートすることができる。The film photoresist laminate of the present invention can be stacked so that the lower layer resist is in contact with the object to be laminated after the support film is peeled off, or after the support and protective film are peeled off, the film photoresist laminate does not change in quality and softens. temperature, i.e. 50-180C1, preferably 80
It can be easily laminated by heating to ~160C. Also, the material to be laminated should be heated at 50 to 180C.
The film photoresist laminate can also be laminated by heating it to , preferably 80 to 160 C, and then pressing it with a laminating rubber roller so that the lower resist of the film photoresist laminate comes into contact with the object to be laminated.
本発明のフィルムホトレジスト積層物は、作業性が極め
て良く、特殊な真空ラミネータあるいは加熱プレス等を
用いることなく、通常のラミネータ(例えばデュポン製
A−24ラミネータ)を用いても空気を巻き込まず基板
表面にラミネートでき、さらにレジストを基板表面に良
く密着させることができる。そのうえ半田浴の熱に十分
に耐え、解像度に優れ、電気的特性も非常に優れたフィ
ルムホトレジストを提供することができる。The film photoresist laminate of the present invention has extremely good workability, and can be used without the need for a special vacuum laminator or heating press, and even when using a normal laminator (for example, DuPont's A-24 laminator), the substrate surface does not involve air. The resist can be laminated to the surface of the substrate, and the resist can be made to adhere well to the surface of the substrate. Moreover, it is possible to provide a film photoresist that can sufficiently withstand the heat of a solder bath, has excellent resolution, and has very excellent electrical properties.
本発明のフィルムホトレジスト積層物は、それ自身で十
分な強度をもつフィルムであるため、単独で用いること
ができ、従来のフィルム状レジストのようにラミネート
時に支持体フィルム層およびレジスト層からなる2層構
造をとる必i はない。本発明のフィルムホトレジスト
積層物は、凹凸を有する基板表面、例えばレリーフが形
成されている基板表面、レリーフカ1形成されていない
粗化銅、凹凸面を有する金属板などヘラミネートすると
きにも好適である。とくに上記において凹凸差が30μ
m以上の場合にお(1て、本発明のフィルムホトレジス
ト積層物と市販のそれとをラミネートしてその状態を観
察すると、本発明のフィルムホトレジスト積層物を用い
る方が空気の巻き込みが顕著に少なく優れている。また
本発明のフィルムホトレジスト積層物を用いると、画像
焼付時にホトマスクをレジスト層に密着させることがで
きるためK、鮮明かつ高解像度を有する画像が得られる
二本発明のフィルムホトレジスト積層物は、銅メツキス
ルホール基板上、および半田メッキスルホール基板上に
施した場合、十分なる耐熱性を有する。市販のアクリレ
ート系ソルダーレジストでは、260Cのソルダーがけ
で、1回−b’−限度(約5秒)であるが、本発明のフ
ィルムホトレジスト積層物は、290C,3分間ソルダ
ーカーけしてもレジストフーイルムに変化−h−な(1
゜し力)も、特に□半田メッキスルホール基板上で、市
販のソルダーレジストは、耐熱性が非常に乏しく、満足
やきろ水率の製品がないのが、現状であるが、本発明の
フィルムホトレジスト積層物は、膜厚を薄くしても十分
な耐熱性があるという極めて優れた特長がある。The film photoresist laminate of the present invention is a film with sufficient strength by itself, so it can be used alone, and unlike conventional film resists, it can be laminated into two layers consisting of a support film layer and a resist layer. There is no need to have a structure. The film photoresist laminate of the present invention is also suitable for laminating substrate surfaces with uneven surfaces, such as substrate surfaces with reliefs, roughened copper without relief marks, and metal plates with uneven surfaces. be. Especially in the above case, the unevenness difference is 30 μ
m or more (1) When the film photoresist laminate of the present invention and a commercially available one were laminated and their condition was observed, it was found that the film photoresist laminate of the present invention was superior because it caused significantly less air entrainment. Furthermore, when the film photoresist laminate of the present invention is used, the photomask can be brought into close contact with the resist layer during image printing, so that images with clear and high resolution can be obtained. It has sufficient heat resistance when applied to copper-plated through-hole boards, and solder-plated through-hole boards.With commercially available acrylate solder resists, soldering at 260C can be applied once to the -b'- limit (approximately 5 seconds). ), but the film photoresist laminate of the present invention changes to a resist film even when soldered at 290C for 3 minutes.
Currently, commercially available solder resists have very poor heat resistance and there are no products with satisfactory water resistance, especially on solder-plated through-hole substrates, but the film photoresist of the present invention A laminate has an extremely excellent feature of sufficient heat resistance even when the film thickness is reduced.
また、本発明のフィルムホトレジスト積層物は、14m
レジストと上層レジストの剥離がなく、また室温で粘着
性がなく、支持体を剥した状態で扱うことができ、ネガ
フィルムと密着して露光できるため、市販のフィルムレ
ジストの解像度の低さも解消でき、ネガフィルムに忠実
なパターンを焼付けることができるという特長がある。Moreover, the film photoresist laminate of the present invention has a thickness of 14 m
There is no peeling between the resist and the upper resist, and there is no stickiness at room temperature, so it can be handled with the support removed, and it can be exposed in close contact with the negative film, so it can overcome the low resolution of commercially available film resists. , which has the advantage of being able to print faithful patterns on negative film.
さらに印刷配線板などの凹凸の厚みが150μmのもの
でも真空ラミネータを使用せず、通常のラミネータで十
分ラミネートでき、なおかつ空気の巻き込みなどの原因
による基板との密着性不良がない。Furthermore, even printed wiring boards with unevenness of 150 μm can be laminated with a normal laminator without using a vacuum laminator, and there is no defect in adhesion to the substrate due to air entrainment.
なお、本発明のフィルムホトレジスト積層物の現像液は
特に限定されるものではなく、たとえば1,1.1〜ト
リクロルエタン、1,1.1−トリクロルエチレンなど
のハロゲン化炭化水素などを現像液として使用すること
ができる。Note that the developer for the film photoresist laminate of the present invention is not particularly limited, and for example, halogenated hydrocarbons such as 1,1.1-trichloroethane and 1,1.1-trichloroethylene can be used as the developer. can be used.
本発明のフィルムホトレジスト積層物は、耐熱性が非常
に優れたソルダーレジストであるため、電子産業分野を
始め、微細加工を必要とする工業分野に貢献する新人で
ある。The film photoresist laminate of the present invention is a solder resist with extremely excellent heat resistance, so it is a new product that will contribute to the electronic industry and other industrial fields that require microfabrication.
次に実施例によって本発明をさらに具体的に説明する。Next, the present invention will be explained in more detail with reference to Examples.
実施例1
重量平均分子量58 、000のシス−1,4−ポリブ
タジェンを、トルエン溶媒中でトリクロロ酢酸とジエチ
ルアルミニウムセスキクロリドからなる触媒を用いて環
化し、環化率53%、〔η〕υL== o、43417
’gの環化物を得た。なお、上記の環化率は次式により
求めた値である。Example 1 Cis-1,4-polybutadiene with a weight average molecular weight of 58,000 was cyclized using a catalyst consisting of trichloroacetic acid and diethylaluminium sesquichloride in a toluene solvent, and the cyclization rate was 53%, [η]υL= = o, 43417
A cyclized product of 'g was obtained. Note that the above cyclization rate is a value determined by the following formula.
*:NMRにより測定
次に上記環化物の濃度30重量−のトルエン?g液xo
opに、フタロシアニンクIJ −ン(C,1,741
60) 0.39.2−メチルアントラキノン0.6り
、4,4′−チオビス(6−t−ブチル−m−クレゾー
ル)o、39および、 田麩化学(株)製クマロンーイ
ンデン樹脂(NG−4)1.5gを加え、ボールミルで
均一な組成物とした。この組成物をポリエステルフィル
ム〔藤森工業(株)製DYNASHEET−38E−0
0IC)上に塗布し、80Cで30分乾燥させ、 厚み
15μmの下層レジストを得た。*: Measured by NMR and then toluene with a concentration of the above cyclized product of 30% by weight? g liquid xo
In the OP, phthalocyanine IJ-n (C, 1,741
60) 0.39.2-methylanthraquinone 0.6-di, 4,4'-thiobis(6-t-butyl-m-cresol) o,39, and coumaron-indene resin (NG -4) 1.5 g was added and a uniform composition was prepared using a ball mill. This composition was applied to a polyester film [DYNASHEET-38E-0 manufactured by Fujimori Industries Co., Ltd.].
0IC) and dried at 80C for 30 minutes to obtain a lower layer resist with a thickness of 15 μm.
次に重量平均分子量210,000のポリメタクリル酸
メチルの40重量%メチルエチルケトン溶液100gに
、トリメチロールメタントリアクリラード209、 ト
リブチルアミン4g、2−メチルアントラキノン1.2
9および2,2−メチレンビス(4−メチル−6−t−
ブチルフェノール)0.4gを加えて、均一な組成物と
したものを上記下層レジスト上に塗布し、80Cで30
分乾燥させ、厚み合計56μmのフィルムホトレジスト
積層物を得た。Next, to 100 g of a 40% by weight solution of methyl methacrylate with a weight average molecular weight of 210,000 in methyl ethyl ketone, 209 trimethylolmethane triacrylate, 4 g of tributylamine, and 1.2 g of 2-methylanthraquinone were added.
9 and 2,2-methylenebis(4-methyl-6-t-
A homogeneous composition was prepared by adding 0.4 g of butylphenol) onto the lower resist layer, and the mixture was heated to 80C for 30 minutes.
After drying for 30 minutes, a film photoresist laminate having a total thickness of 56 μm was obtained.
このフィルムホトレジスト積層物を支持体フィルムから
剥離したのち、下層レジストが被ラミネート物に接する
ようにして、110Cに予熱しておいた線幅150μm
、線間が100μm、レリーフの高さが100μmの半
田メッキスルホール基板にラミネートした。1次にスル
ホール部分のレジストを除去するため、最小ランド50
μmのテストパターンホトマスクを密着し、(株)オー
ク製作所製フェニックスー3000両面焼付機を用い、
光強度3000W/m2で20秒間露光したのち、1,
1.1−)リクロルエタンで現像したところ、スルホー
ル部分ににじみのない鮮明な着色画像が得られた。After peeling off this film photoresist laminate from the support film, a line width of 150 μm that had been preheated to 110C was placed so that the lower layer resist was in contact with the object to be laminated.
It was laminated onto a solder-plated through-hole substrate with a line spacing of 100 μm and a relief height of 100 μm. First, in order to remove the resist in the through-hole area, the minimum land size is 50.
A μm test pattern photomask was applied closely, and a Phoenix 3000 double-sided printing machine manufactured by Oak Seisakusho Co., Ltd. was used.
After exposure for 20 seconds at a light intensity of 3000 W/m2, 1,
1.1-) When developed with lychloroethane, a clear colored image with no bleeding in the through hole area was obtained.
次いで、150t:’で60分加熱処理を行なうと、ネ
ガマスクに忠実な寸法精度の優れた画像永久保護膜が得
られた。この永久保護膜を有する基板表面をロジン(サ
ンフ化学工業製フランクスBF−1230)で処理する
ことにより金属部への半田の付着性をよくしたのち、2
90tl;の半田浴へ20秒間づつ9回浸漬しても何ら
変化を受けず、ソルダーレジストとして十分使用可能で
あった。Next, when heat treatment was performed at 150 t:' for 60 minutes, a permanent image protective film with excellent dimensional accuracy faithful to the negative mask was obtained. After improving the adhesion of solder to metal parts by treating the surface of the board with this permanent protective film with rosin (Francs BF-1230 manufactured by Sunf Chemical Industry Co., Ltd.),
Even after being immersed in a 90 tl solder bath nine times for 20 seconds each, no change occurred, and it could be used satisfactorily as a solder resist.
また、耐熱性フィルムホトレジスト積層物の上層レジス
トと下層レジストとの密着性を調べるために種々の方法
で剥離を試みたが、層間剥離の層像が見られず、層間の
密着性が十分であり、固体表面にラミネートする時も、
何ら支障ないことが判明した。In addition, in order to investigate the adhesion between the upper resist layer and the lower resist layer of the heat-resistant film photoresist laminate, various methods were used to peel them off, but no layer image of delamination was observed, indicating that the adhesion between the layers was sufficient. , even when laminating on solid surfaces,
It turned out that there were no problems.
比較例1
実施例1のクマロン−インデン樹脂を除いた以外は、同
様の条件で積層物を製造し、半田メッキスルホール基板
にラミネーションし、半田耐熱性、上層レジストと下層
レジストとの密着性を調べた。この結果、上層レジスト
と下層レジストとの密着がやや弱く、保護フィルムを剥
離しなからラミネーションを行うと一部に上層レジスト
と下層レジストとの間で層間剥離が生じ1、半田メッキ
されたレリーフ上のレジスト表面に浮きが生じ、その部
分に小さな破損がみられた。Comparative Example 1 A laminate was manufactured under the same conditions as in Example 1 except that the coumaron-indene resin was removed, and laminated onto a solder-plated through-hole substrate, and the solder heat resistance and adhesion between the upper layer resist and the lower layer resist were examined. Ta. As a result, the adhesion between the upper layer resist and the lower layer resist is somewhat weak, and if lamination is performed without peeling off the protective film, delamination may occur between the upper layer resist and the lower layer resist in some parts1. Lifting occurred on the resist surface, and small damage was observed in that area.
実施例2〜5
実施例1のクロマン−インデン樹脂の代わりに、表−1
の粘着性付与剤を用いた以外は、実施例1と同様にして
得られたフィルムホトレジスト積層物の半田耐熱性、上
層レジストと下層レジストとの密着性を調べたところ、
結果は、実施例1と同じく、良好であった。Examples 2 to 5 Table 1 was used instead of the chroman-indene resin of Example 1.
The solder heat resistance of the film photoresist laminate obtained in the same manner as in Example 1, except that the tackifier was used, and the adhesion between the upper layer resist and the lower layer resist were examined.
The results were good as in Example 1.
その結果を表−1に示す。The results are shown in Table-1.
実施例6
実施例1のクマロン−インデン樹脂を除いた以外は実施
例1と同様に下層レジストを得た。Example 6 A lower resist was obtained in the same manner as in Example 1 except that the coumaron-indene resin in Example 1 was removed.
次に分子量210,000のポリメタクリル酸メチルの
40重量−メチルエチルケトン溶液100gに、トリメ
チロールメタントリアクリラード209、トリブチルア
ミン29.1,2−ベンズアントラキノン1.29.2
.2−メチレンビス(4−メチル−6−t−ブチルフェ
ノール)0.49、および三井石油化学(株)製芳香族
系石油樹脂(1トロジン”#”80)1.59を加え、
均一な組成物とした(ものを上記下層レジスト上に塗布
し、80Cで30分乾燥させ、厚み合計66μmのフィ
ルムホトレジスト積層物を得た。Next, to 100 g of a 40 weight solution of polymethyl methacrylate having a molecular weight of 210,000 in methyl ethyl ketone, 209 g of trimethylolmethane triacrylate, 29.2 g of tributylamine, and 1.29.2 g of 1,2-benzanthraquinone.
.. Add 0.49 of 2-methylenebis(4-methyl-6-t-butylphenol) and 1.59 of aromatic petroleum resin (1 Trozine "#" 80) manufactured by Mitsui Petrochemicals Co., Ltd.
A uniform composition was coated on the lower resist layer and dried at 80C for 30 minutes to obtain a film photoresist laminate with a total thickness of 66 μm.
このフィルムホトレジスト積層物を支持体フィルムから
剥したのち、下層レジストが被ラミネート物に接するよ
うにして、1xocに予熱しておいた線幅150μm1
線間が100μm。After this film photoresist laminate was peeled off from the support film, a line width of 150 μm1, which had been preheated to 1xoc, was placed so that the lower layer resist was in contact with the object to be laminated.
Line spacing is 100μm.
レリー−)の高さが100μmの半田メッキスルホール
基板にラミネートした。次にスルホール部分のレジスト
を除去するため、最小ランド50μmのテストパターン
ホトマスクを密着し、(株)オーク製作新製フェニック
スー3000両面焼付機を用い、光強度3000W/m
2で20秒間露光したのち、1,1.1−トリクロルエ
タンで現像したところ、スルホール部分ににじみのない
鮮明な着色画像が得られた。It was laminated onto a solder-plated through-hole substrate with a height of 100 μm. Next, in order to remove the resist in the through-hole area, a test pattern photomask with a minimum land of 50 μm was closely attached, and a new Phoenix 3000 double-sided printing machine manufactured by Oak Seisaku Co., Ltd. was used with a light intensity of 3000 W/m.
2 for 20 seconds, and then developed with 1,1,1-trichloroethane, a clear colored image with no bleeding in the throughhole areas was obtained.
次いで、150Cで60分加熱処理を行なうと、ネガマ
スクに忠実な寸法精度の優れた画像永久保護膜が得られ
た。この永久保護膜をサンフ化学工業製フラックス5F
−1230で処理したのち、2901Z”の半田浴へ2
0秒間づつ9回浸漬しても何ら変化を受゛けず、ンルダ
ーレジストとして十分使用可能であった。Next, heat treatment was performed at 150 C for 60 minutes, and a permanent image protective film with excellent dimensional accuracy faithful to the negative mask was obtained. This permanent protective film is coated with Sunf Chemical Industry Flux 5F.
- After processing with 1230, go to 2901Z” solder bath 2
No change was observed even after 9 times of immersion for 0 seconds each, and the resist was sufficiently usable as a primer resist.
また、耐熱性フィルムホトレジスト積層物の上層レジス
トと下層レジストとの密着性を調べるために種々の方法
で剥離を試みたが、層間剥離の現象が見られず、層間の
密着性が十分であり、固体表面にラミネートする時も、
何ら支障ないことが判明した。In addition, in order to investigate the adhesion between the upper resist layer and the lower resist layer of the heat-resistant film photoresist laminate, we tried peeling them using various methods, but no delamination phenomenon was observed, and the adhesion between the layers was sufficient. Even when laminating on solid surfaces,
It turned out that there were no problems.
Claims (1)
成物からなる下層レジストと、(B)、(a)モノオレ
フィン系不飽和化合物の重合体もしくは共重合体100
重量部、(b)分子内に光重合性二重結合を少なくとも
2個以上有する多官能光重合性不飽和化合物5〜100
重量部、(C)光条゛ 橋剤、光増感剤および光重合開
始剤より選ばれた少なくとも1mを含む組成物からなる
上層レジストとで構成されるフィルムホトレジスト積層
物の下層レジストおよび/または上層レジストに、粘着
性付与剤をブタジェン系重合体の環化物またはモノオレ
フィン系不飽和化合物の重合体もしくは共重合体100
重量部に対して0.1〜50重量部の割合で配合する°
ことを特徴とする耐熱性フィルムホトレジスト積層物。(A) a lower resist consisting of a composition containing a cyclized product of a butadiene polymer as an essential component, and (B), (a) a polymer or copolymer of a monoolefinic unsaturated compound 100
Parts by weight, (b) polyfunctional photopolymerizable unsaturated compound having at least two or more photopolymerizable double bonds in the molecule 5 to 100
parts by weight, (C) Photostripe A lower layer resist of a film photoresist laminate and/or an upper layer resist consisting of a composition containing at least 1 m of a photoresist selected from a bridging agent, a photosensitizer, and a photopolymerization initiator. A tackifier is added to the upper resist as a cyclized product of a butadiene polymer or a polymer or copolymer of a monoolefinic unsaturated compound.
Blend at a ratio of 0.1 to 50 parts by weight to parts by weight
A heat-resistant film photoresist laminate characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7556483A JPS59201044A (en) | 1983-04-28 | 1983-04-28 | Heat resistant film photoresist laminate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7556483A JPS59201044A (en) | 1983-04-28 | 1983-04-28 | Heat resistant film photoresist laminate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59201044A true JPS59201044A (en) | 1984-11-14 |
Family
ID=13579799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7556483A Pending JPS59201044A (en) | 1983-04-28 | 1983-04-28 | Heat resistant film photoresist laminate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59201044A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61234593A (en) * | 1985-03-15 | 1986-10-18 | エム アンド テイー ケミカルズ インコーポレーテツド | Printed circuit board having improved attaching property solder mask and metal |
-
1983
- 1983-04-28 JP JP7556483A patent/JPS59201044A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61234593A (en) * | 1985-03-15 | 1986-10-18 | エム アンド テイー ケミカルズ インコーポレーテツド | Printed circuit board having improved attaching property solder mask and metal |
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