JPS593955B2 - Method for manufacturing high-strength, heat-resistant silicon compound fired moldings - Google Patents

Method for manufacturing high-strength, heat-resistant silicon compound fired moldings

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Publication number
JPS593955B2
JPS593955B2 JP51070348A JP7034876A JPS593955B2 JP S593955 B2 JPS593955 B2 JP S593955B2 JP 51070348 A JP51070348 A JP 51070348A JP 7034876 A JP7034876 A JP 7034876A JP S593955 B2 JPS593955 B2 JP S593955B2
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JP
Japan
Prior art keywords
powder
sic
compound
organosilicon polymer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51070348A
Other languages
Japanese (ja)
Other versions
JPS52154816A (en
Inventor
秀夫 茅野
統悦 宍戸
守 大森
正昭 浜野
聖使 矢島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKUSHU MUKI ZAIRYO KENKYUSHO
Original Assignee
TOKUSHU MUKI ZAIRYO KENKYUSHO
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Application filed by TOKUSHU MUKI ZAIRYO KENKYUSHO filed Critical TOKUSHU MUKI ZAIRYO KENKYUSHO
Priority to JP51070348A priority Critical patent/JPS593955B2/en
Publication of JPS52154816A publication Critical patent/JPS52154816A/en
Publication of JPS593955B2 publication Critical patent/JPS593955B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は、高強度耐熱性ケイ素化合物焼成成形体の製造
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a high-strength, heat-resistant silicon compound fired molded body.

特に本発明は、SiC,Si3N4,MOSi2などの
耐熱性無機ケイ素化合物の焼成成形体の高温における機
械的強度を大幅に向上せしめた上に耐熱衝撃性をも改良
せしめた新規な無機ケイ素化合物焼成成形体の製造方法
に係るものである。
In particular, the present invention provides a novel inorganic silicon compound sintered molded product that significantly improves the mechanical strength at high temperatures of a sintered molded product of a heat-resistant inorganic silicon compound such as SiC, Si3N4, MOSi2, etc., and also improves thermal shock resistance. This relates to a method of manufacturing a body.

近年、高温ガスタービン用セラミツクス材料の開発に代
表されるように、従来の金属材料では耐えられない苛酷
な条件の下においてセラミツクスを利用しようという試
みが盛んになされている。セラミツクスは一般に高温に
耐え、耐摩耗性に優れているが、金属材料に較べて、脆
いことが最大の欠点であり、高淵高応力構造材料として
は不適当であるとされていたが、最近の開発研究によつ
て、かなりの応力に耐えうるセラミツクスが開発されつ
つある。これらセラミツクスの中でも、SiCやSi3
N4などのケイ素化合物は特に高温強度、耐熱衝撃性、
耐酸化性、耐摩耗性、耐食性等に優れているため、前記
高温高応力構造材料として、あるいは耐熱性耐摩耗性材
料として、最も有望視されており、前記ケイ素化合物に
関する開発研究は数多い。これらケイ素化合物よりなる
成形体は、一般に粉末加圧体の加熱処理により製造され
るが、上記のような高強度材料を得るためにはまずでき
るだけ高密度を有する成形体を製造することが重要であ
るとされ、従来の研究開発もこの目的に沿つた方向で行
なわれて来た。
In recent years, as typified by the development of ceramic materials for high-temperature gas turbines, many attempts have been made to utilize ceramics under harsh conditions that conventional metal materials cannot withstand. Ceramics generally withstand high temperatures and have excellent wear resistance, but their biggest drawback is that they are brittle compared to metal materials, and were considered unsuitable as high-stress structural materials. Through research and development, ceramics that can withstand considerable stress are being developed. Among these ceramics, SiC and Si3
Silicon compounds such as N4 have particularly high temperature strength, thermal shock resistance,
Due to its excellent oxidation resistance, abrasion resistance, corrosion resistance, etc., it is considered to be the most promising material for the above-mentioned high-temperature, high-stress structural material or as a heat-resistant and wear-resistant material, and there are many development studies regarding the silicon compound. Molded bodies made of these silicon compounds are generally produced by heat treatment of pressed powder bodies, but in order to obtain the above-mentioned high-strength materials, it is important to first produce a molded body with as high a density as possible. It is believed that there is, and conventional research and development has been conducted in a direction along with this purpose.

しかしながら、例えばSiCおよびSi3N4は自己焼
結性に極めて乏しいため、これらを高密度化するために
は適切な粘結剤を添加する必要があり、かかる粘結剤の
使用は、製品中に不純物を含有せしめるため、高密度化
は達成しても、この不純物の存在が高温強度を低下させ
る原因となる欠点があつた。
However, for example, SiC and Si3N4 have very poor self-sintering properties, so it is necessary to add an appropriate binder to make them dense, and the use of such a binder introduces impurities into the product. Although high density can be achieved by incorporating these impurities, there is a drawback that the presence of these impurities causes a decrease in high-temperature strength.

例えば上記の事情を従来得られている高密度ケイ素化合
物成形体について、SiCおよびSi,N4を代表例と
して以下に説明すると、SiC成形体の製造にはAl,
Fe,Y,O,,Bなどが粘結剤として使用され、常圧
または真空中での焼結もしくはホツトプレスにより高密
度成形体が得られている。また最近SiCと炭素(0の
混合粉末の高温焼成過程でSi蒸気を滲透させて高密度
成形体を得る方法が開発され、この製品は胛−SiCと
呼ばれている。この成形体は実施例において後述するよ
うに密度が3.109/dと高く、その機械的強度も例
えば1200℃までの抗折力17.6kg/11tdで
あり、前記の他の粘結剤を使用した製品よりも優れてい
る。しかしながら、この製造方法により得られる成形体
中には2〜5重量%の金属Siの残留が不可避であり、
酸化性雰囲気中でこの製品が使用されると、この残留S
iは高温においてSiO2となつて成形体中に存在する
ようになるため、高泥酸化性雰囲気中で長時間使用した
場合はこの成形体の強度を著しく低下せしめる原因とな
る。次に、Sl3NlはMgO,Al2O3,Y!03
,,Y203−A4O,などの粘結剤として用いて主と
してホツトプレス法により高密度化されているが、Mg
Oを使用した成形体中には高温でSiMgO3なるガラ
ス質相ができるため高密度化は達成されるが、高温強度
はこのガラス質相の軟化により著しく低下する欠点を有
している。
For example, the above-mentioned circumstances will be explained below regarding conventionally obtained high-density silicon compound molded bodies using SiC and Si,N4 as representative examples.In the production of SiC molded bodies, Al,
Fe, Y, O, B, etc. are used as binders, and high-density compacts are obtained by sintering or hot pressing at normal pressure or in vacuum. Recently, a method for obtaining a high-density molded body by permeating Si vapor during the high-temperature firing process of a mixed powder of SiC and carbon (0) has been developed, and this product is called 胛-SiC.This molded body is an example of As will be described later, the density is as high as 3.109/d, and its mechanical strength is, for example, a transverse rupture strength of 17.6 kg/11 td up to 1200°C, which is superior to products using other binders mentioned above. However, it is inevitable that 2 to 5% by weight of metallic Si remains in the molded product obtained by this manufacturing method.
When this product is used in an oxidizing atmosphere, this residual S
Since i becomes SiO2 at high temperatures and is present in the molded product, if it is used for a long time in a highly oxidizing atmosphere, it will cause a significant decrease in the strength of the molded product. Next, Sl3Nl is MgO, Al2O3, Y! 03
Mg
In molded products using O, a vitreous phase of SiMgO3 is formed at high temperatures, so high density can be achieved, but the high-temperature strength has the drawback of being significantly reduced due to the softening of this vitreous phase.

またAl2O3を粘結剤として用いた場合は、シアロン
(SIALON)と呼ばれるS!−Al−0ヨ勅)らな
る固溶相が現れ、高密度化は達成されるが、この固溶相
の高温における強度は低いので、実用材料としては不適
当である。また、Y2O3やY2O3−A′203を粘
結剤として用いたホツトプレス成形体は、高温における
強度の向上を目的として製造されているが、いずれも8
00〜1000℃から強度が急速に低下する欠点を改善
しえないのが現状である。以上述べたように、高温強度
に優れた成形体を得るためには、高温における強度低下
の原因となるような相を生じないような基地紛粒体と粘
結剤との好適な組合せを選定しなければならない。
Also, when Al2O3 is used as a binder, S! A solid solution phase consisting of -Al-0) appears and high density is achieved, but the strength of this solid solution phase at high temperatures is low, making it unsuitable as a practical material. In addition, hot press molded products using Y2O3 or Y2O3-A'203 as a binder are manufactured with the aim of improving strength at high temperatures, but both
At present, it is not possible to improve the drawback that the strength rapidly decreases from 00 to 1000°C. As mentioned above, in order to obtain a molded product with excellent high-temperature strength, it is necessary to select a suitable combination of base powder and binder that does not produce phases that would cause a decrease in strength at high temperatures. Must.

本発明は、上記基地紛粒体と粘結剤との好適な選定に基
いて製造される高温機械的性質に優れたケイ素化合物焼
成成形体の製造方法を提供することを目的とするもので
ある。本発明は上記目的を達成するため、上記ケイ素の
粉末との混合体に、ケイ素と炭素を主たる骨格成分とす
る有機ケイ素高分子化合物を粘結剤として添加した混和
物を焼成9て成形体となして、該成形体中の粒界部分に
、前記有機ケイ素高分子化合物から転換生成した500
0A以下のβ−SiC微粒子および前記ケイ素粉末と有
機ケイ素高分子化合物の焼成過程で生成する遊離炭素と
から反応生成した100μm以下のβ−SiCを充填せ
しめたことにより、前記耐熱性ケイ素化合物とSiCか
らなる高温における機械的性質に優れた焼成成形体とす
る製造方法に関し、また、さらに上記焼成成形体に前記
粘結剤として使用した有機ケイ素高分子化合物を含浸さ
せた後焼成することによつて、より高密度で高性能な焼
成成形体となすことに関するものである。
An object of the present invention is to provide a method for producing a silicon compound fired molded body having excellent high-temperature mechanical properties, which is produced based on suitable selection of the above-mentioned base powder and binder. . In order to achieve the above object, the present invention is made by baking a mixture of the above-mentioned silicon powder and adding an organosilicon polymer compound whose main skeleton components are silicon and carbon as a binder to form a molded body. 500, which was converted and produced from the organosilicon polymer compound, was added to the grain boundary portion of the molded body.
By filling β-SiC fine particles of 0A or less and β-SiC of 100 μm or less produced by a reaction between the silicon powder and free carbon produced in the firing process of the organosilicon polymer compound, the heat-resistant silicon compound and SiC 2. A method for producing a fired molded body having excellent mechanical properties at high temperatures, and further comprising: impregnating the fired molded body with the organosilicon polymer compound used as the binder and then firing it. This relates to producing a fired molded product with higher density and higher performance.

次に本発明を詳細に説明する。Next, the present invention will be explained in detail.

本発明の焼成成形体は耐熱性無機ケイ素化合物類から選
ばれる1種または2種以上の紛粒体とその粒界を占める
2種類のβ−SiC粒子とから構成されるので前述した
従来品のように、高温にお米以上のような性質を有する
物質から構成される本発明の焼成成形体の性質は、実施
例において後述するように従来の類似品に比較して極め
て優れたものであり、これらの成形体は、例えば高温ガ
スタービン部品などの高泥材料として使用できるなど?
の適用範囲は極めて広範囲に渉るものと期待される。
The fired compact of the present invention is composed of one or more types of powder particles selected from heat-resistant inorganic silicon compounds and two types of β-SiC particles occupying the grain boundaries, so it is different from the conventional product described above. As will be described later in Examples, the properties of the fired molded product of the present invention, which is composed of a substance that has properties similar to those of rice at high temperatures, are extremely superior compared to conventional similar products. , these compacts can be used as high mud materials, e.g. for high temperature gas turbine components?
The scope of application is expected to be extremely wide.

次に、本成形体の製造方法と製造の過程における種々の
化学的変化等について以下に説明する。
Next, the method for manufacturing the molded article and various chemical changes during the manufacturing process will be described below.

本成形体を製造するための出発原料は、第1表に代表例
として示したような耐熱性無機ケイ素化合物の紛粒と金
属ケイ素粉末、さらに粘結剤として添加されるケイ素と
炭素を主な骨格成分とする有機ケイ素高分子化合物とか
ら主に構成される。耐熱性無機ケイ素化合物としては、
第1表に掲げたものの他に、これらと異る組成を有する
例え昶いて特に機械的強度の低下を招くような相などが
存在しないことが特長である。すなわち、本発明の焼成
成形体は、本来、高温における機械的強度、耐酸化性、
耐摩耗性、耐食性などに優れ、さらに比較的他物質との
反応性の少ない無機ケイ素化合物とSiCとから構成さ
れているため、前記の優れた高温特性がそのまま成形体
全体としても具備されているものである。次に本発明の
焼成成形体を構成する耐熱性無機ケイ素化合物の内、代
表的なものを挙げれば第1表に示す如くである。
The starting materials for producing this molded body mainly consist of heat-resistant inorganic silicon compound powder and metal silicon powder as shown in Table 1 as representative examples, as well as silicon and carbon added as binders. It is mainly composed of an organosilicon polymer compound as a skeleton component. As a heat-resistant inorganic silicon compound,
In addition to those listed in Table 1, a special feature is that there is no phase or the like that has a composition different from these, which would particularly cause a decrease in mechanical strength. That is, the fired molded product of the present invention inherently has mechanical strength at high temperatures, oxidation resistance,
Since it is composed of an inorganic silicon compound and SiC that have excellent wear resistance and corrosion resistance, and have relatively low reactivity with other substances, the molded product as a whole also has the above-mentioned excellent high-temperature properties. It is something. Next, among the heat-resistant inorganic silicon compounds constituting the fired compact of the present invention, representative ones are shown in Table 1.

ばMO2Sl,MO,Si2の如き単体化合物、これら
同志が複合してなる例えばSiC−Si3N4あるいは
SiC−MOSi2のような複合化合物、さらには少量
の他の耐熱性セラミツクスや高融点金属を含有するケイ
素化合物の紛粒を使用することができる。
For example, simple compounds such as MO2Sl, MO, Si2, composite compounds such as SiC-Si3N4 or SiC-MOSi2, and silicon compounds containing small amounts of other heat-resistant ceramics or high-melting point metals. powder can be used.

またこれらのケイ素化合物の紛粒の粒径は、出来る限り
小さい方が、初めからあるいは焼成過程において粒内空
孔をもたらさないので高温強度に優れ、耐熱性大なる成
形体を得るために有利であるが、微粉粒を得るために著
しい経済的不利を生ずる場合はこの限りではない。また
、これら紛粒の化学的純度についても、出来うる限り高
純度のものが望ましいが、上記と同様に、経済的不利を
伴う場合は、比較的低純度のものを使用することもでき
る。また、金属ケイ素粉末についても、上記と同様に微
粒子で高純度のものほど成形体の性能向上に有利である
が、著しく経済的不利を伴う場合は、100Itm以下
の粒子であれば低純度のものも使用することができる。
In addition, it is advantageous for the particle size of these silicon compound powders to be as small as possible, as this will not create intragranular pores from the beginning or during the firing process, resulting in excellent high-temperature strength and heat-resistant molded bodies. However, this does not apply if obtaining fine powder particles would cause a significant economic disadvantage. Furthermore, it is desirable that the chemical purity of these powder particles be as high as possible, but similarly to the above, if it is economically disadvantageous, particles of relatively low purity can also be used. Regarding metallic silicon powder, as mentioned above, the finer the particles and the higher the purity, the more advantageous it is to improve the performance of the molded product, but if there is a significant economic disadvantage, use lower purity particles as long as the particles are 100 Itm or less. can also be used.

以上述べた無機ケイ素化合物および金属ケイ素粉末は市
販のもので充分その目的を達することができ、簡便に入
手可能な原料であるので有利である。次に、炭素とケイ
素を主たる骨格成分とする有機ケイ素高分子化合物より
なる粘結剤について説明する。
The above-mentioned inorganic silicon compounds and metal silicon powders are commercially available and are advantageous because they can sufficiently achieve the purpose and are easily available raw materials. Next, a binder made of an organosilicon polymer compound whose main skeleton components are carbon and silicon will be explained.

本発明に用いるケイ素と炭素とを主な骨格成分*参とす
る有機ケイ素高分子化合物の出発原料として使用するこ
とのできる有機ケイ素化合物は下記(1)〜alの型式
に分類されるものから選ばれる何れか1種または2種以
上からなるものである。
The organosilicon compound that can be used as a starting material for the organosilicon polymer compound whose main skeleton components are silicon and carbon used in the present invention is selected from those classified into the following types (1) to al. It consists of one or more of the following.

(ハ SiC−C結合のみを含む化合物シラ炭化水素(
SilahydrOOarbOn)とよばれるR4S
i,R3Si(R’SiR)NR’SiR2などとその
炭素一官能性誘導体がこれに属する。
(C) Compound silahydrocarbon containing only SiC-C bonds (
R4S called SilahydrOOarbOn)
i, R3Si(R'SiR)NR'SiR2, etc. and their carbon monofunctional derivatives belong to this category.

(2) Si−C結合のほかにSi−H結合をふくむ化
合物モノ一,ジ一,およびトリオルガノシランなどがこ
れに属する。
(2) Compounds containing Si-H bonds in addition to Si-C bonds, such as mono-, di-, and triorganosilanes, belong to this category.

(3) Si−Hal結合を有する化合物モノシランを
除くオルガノハロゲノシランである。
(3) Compounds having Si-Hal bonds Organohalogenosilanes other than monosilane.

例CH2= CHSiF3,C2H5SiHCl2,(
CH3)2( CICH2)SiSi( CH3)2
C1,(C6H,)3SiBr,(4) Si−N結合
を有する化合物シリルアミン等がこれにふくまれる。
Example CH2= CHSiF3, C2H5SiHCl2, (
CH3)2(CICH2)SiSi(CH3)2
This includes C1, (C6H,)3SiBr, (4) silylamine, a compound having an Si--N bond, and the like.

(5) Sl−0Rオルガノアルコキシ(またはアロキ
シ)シランである。
(5) Sl-0R organoalkoxy (or alloxy) silane.

(6) Si−0H結合を有する化合物オルガノシラノ
ール類(7) Si−Si結合をふくむ化合物 (8) Si−0−Si結合を含む化合物オルガノシロ
キサンである。
(6) Compound organosilanols having Si-0H bond (7) Compound containing Si-Si bond (8) Compound organosiloxane containing Si-0-Si bond.

(9)有機ケイ素化合物エステル;シラノールと酸とか
ら形成されると考えられるエステルで、(CH3)2S
1(0C0CH3)2などがこれに属する。
(9) Organosilicon compound ester: An ester thought to be formed from silanol and acid, (CH3)2S
1(0C0CH3)2, etc. belong to this category.

(代)有機ケイ素化合物過酸化物;(CH3)3Siα
℃゜(CH3)3,(CH3)3Si00Si(CH3
)3など。
(S)Organosilicon compound peroxide; (CH3)3Siα
℃゜(CH3)3,(CH3)3Si00Si(CH3
)3 etc.

上記(1)〜(代)の分子構造においてRはアルキル基
、アリール基を示している。出発原料である前記(1)
〜(代)の分類型式に属する有機ケイ素化合物からケイ
素と炭素とを主な骨格成分とする有機ケイ素高分子化合
物を生成させるには、前記(1)〜(自)の分類型式に
属する有機ケイ素化合物を照射、加熱、重縮合用触媒添
加の少なくとも1つを用い重縮合反応させる。上記のよ
うな重縮合反応によつて、前記(1)〜(自)の有機ケ
イ素化合物から得られる有機ケイ素高分子化合物の骨格
構造を例示すれば次の如きものがある。
In the molecular structures of (1) to (sub) above, R represents an alkyl group or an aryl group. The starting material (1) above
In order to produce an organosilicon polymer compound whose main skeleton components are silicon and carbon from organosilicon compounds belonging to the classification types (1) to (1) above, organic silicon compounds belonging to the classification types (1) to (1) must be used The compound is subjected to a polycondensation reaction using at least one of irradiation, heating, and addition of a polycondensation catalyst. Examples of the skeletal structures of organosilicon polymer compounds obtained from the organosilicon compounds (1) to (self) by the polycondensation reaction described above are as follows.

“。“.

−ニ:}V忙ニリ7琳2,。.9,、n=2,ポリ(シ
ルエ千レンシロキサン)(ロ)n;:―芒羊エニレンシ
ロキサン)n=゛1,ポリぐメチレンオキシシロキサン
)n=2,ポリ(エチレンオキシシロキサン)n=6,
ポリ(フエニレンオキシシロキサン)n−Al2,,り
(ジフエニレンオキシシロキサン)(ハ)−Sinn=
1,,リシルメチレン n=2,ポリシルエチレン n=3,ポリシルトリメチレン n=6,ポリシルフエニレン n=12,ポリシルジフエニレン (ニ)前記(イ)〜(ハ)記載の骨格成分を鎖状、環状
および三次元構造のうち少なくとも一つの部分構造とし
て含むもの、またf(X暉→の混合物。
-ni: }V busy niri 7 rin 2,. .. 9,, n = 2, poly(ethylene oxysiloxane) (b) n;: - Enylene siloxane) n = ゛1, polygmethyleneoxysiloxane) n = 2, poly(ethyleneoxysiloxane) n = 6,
Poly(phenyleneoxysiloxane) n-Al2,,ri(diphenyleneoxysiloxane)(c)-Sinn=
1, lysylmethylene n = 2, polysylethylene n = 3, polysyltrimethylene n = 6, polysylphenylene n = 12, polysyldiphenylene (d) the skeleton components described in (a) to (c) above Those containing at least one partial structure among chain, cyclic and three-dimensional structures, and mixtures of f(X暉→).

このようにして製造された有機ケイ素高分子化合物は、
室温において粘稠液あるいは固体として得ることができ
る。さらに、本発明においては、必要により以下に述べ
るような有機金属化合物を前記(1)〜(至)の有機ケ
イ素化合物に0.1〜20重量%添加して、重縮合させ
て、含金属有機ケイ素高分子化合物となし、これをもつ
て、粘結剤とすることもできる。
The organosilicon polymer compound produced in this way is
It can be obtained as a viscous liquid or a solid at room temperature. Furthermore, in the present invention, if necessary, 0.1 to 20% by weight of an organometallic compound as described below is added to the organosilicon compounds of (1) to (to) above, and polycondensation is performed to form a metal-containing organometallic compound. It can also be made into a silicon polymer compound and used as a binder.

前記有機金属化合物としては次の第2表に示すようなも
のを有利に使用することができる。前記有機金属化合物
を0.1〜20重量%前記(1)〜(代)の有機ケイ素
化合物に混合したのち、重縮合反応により、各種の金属
元素を微量成分として骨格に含む有機ケイ素高分子化合
物を製造することができる。
As the organometallic compound, those shown in Table 2 below can be advantageously used. After mixing 0.1 to 20% by weight of the organometallic compound with the organosilicon compounds of (1) to (sub) above, a polycondensation reaction is performed to produce an organosilicon polymer compound containing various metal elements as trace components in the skeleton. can be manufactured.

以上述べたような炭素とケイ素を主たる骨格成分とし、
必要により微量成分として金属元素をその骨格に含有す
る有機ケイ素高分子化合物は、比較的簡便安価な製造方
法により、室温で固体または粘稠液として得られる。
The main skeleton components are carbon and silicon as described above,
An organosilicon polymer compound containing a metal element in its skeleton as a trace component if necessary can be obtained as a solid or a viscous liquid at room temperature by a relatively simple and inexpensive manufacturing method.

本発明においては、これらの固体または粘稠液をそのま
ま粘結剤として用いることができる。すなわち、これら
の粘結剤は、300℃前後の比較的低い加熱により、粘
性の少い液体となるので、耐熱性無機ケイ素化合物およ
び金属ケイ素粉末の混合体からなる基地に添加され混和
されてなる圧粉体が加熱焼成される初期段階には、一旦
低粘性流体となり水素やケイ素を含む有機物は揮発成分
として揮散するが、残存する炭素とケイ素は約800℃
以上から化合して徐々にβ−SiCを形成し、少量残留
する遊離炭素と共に無機ケイ素化合物粉粒およびケイ素
粉末の間隙を充填し始める。さらに温度が上昇して10
00℃以上になると、前記遊離炭素と金属ケイ素粉末が
反応して徐々にSiCを生成する。またさらに1250
℃以上になると、前記有機ケイ素高分子化合物から転換
生成する5000Å以下のβ−SiCおよび遊離炭素と
金属ケイ素粉末から反応生成する100It771以下
のβ−SiCだけで無機ケイ素化合物粉粒の粒界を占め
るようになる。すなわち加熱初期に存在した余分な物質
は飛散して存在しなくなるか、SiC基地中の無機ケイ
素化合物粉粒およびケイ素粉末を全般的に覆うことにな
り、さらに続く高温までの加熱過程で生起する必要な反
応や拡散などを容易ならしめるので、最終的に強着結合
した焼成成形体となすための効果が極めて大きい有利な
粘結剤である。以上述べた出発原料から構成される圧粒
体中において、加熱過程で生じる化学的変化について以
下に説明する。前述したように、加熱初期に粘結剤が低
粘性流体となり、無機ケイ素化合物粉粒および金属ケイ
素粉末を全般的に覆う。さらに加熱温度が上昇すると、
粘結剤である有機ケイ素高分子化合物は熱分解し、主と
してβ−SiCおよび遊離炭素が生成残留し、他は揮散
する。このような加熱過程で無機ケイ素化合物粉粒は粉
粒同志による結合とβ−SlCによる結合とにより強着
結合することになるが、粒界に存在するβ−SiCが無
機ケイ素化合物同志の粗大粒成長を抑止するので、通常
粒成長時に形成される粒内空孔は本発明の成形体中には
ほとんど存在しない。また粒界に存在するβ−SiCで
、有機ケイ素高分子化合物から転換生成したものは、1
500℃以下の加熱では通常30〜500λの微粒子の
凝集体として存在するので粒界領域自体は比較的低密度
な組織となる。しかしながら、前記のような微粒子凝集
体における機械的強度は、このような集合体特有の応力
伝播緩和機構により、極めて優れたものとなるので、比
較的低密度組織であつても成形体全体に何ら悪影響を及
すことなく、むしろ耐熱衝撃性を向上せしめる効果があ
るので好ましい形態である。また金属ケイ素と遊離炭素
から反応生成したSiCは、金属ケイ素と遊離炭素の量
が微量であるため、前記の転換生成β−SiCに比べて
、極く少量しか生成しないが、その粒の大きさは予め添
加した金属ケイ素粉末の粒径に依存する。この粒径は小
さい程遊離炭素との反応が進みやすく有利であるが、生
成したSiC自体は前記の有機ケイ素高分子化合物より
転換生成したSiC微粒子凝集体によつて取り巻かれ強
力な結合をなすので、機械的強度には悪影響を与えるこ
とはない。したがつて、金属ケイ素粉末の粒径は10μ
m以下のものが最も好適ではあるが101tm以上10
0μmまでのものでも有利に使用することができる。ま
た、金属ケイ素粉末の添加量は遊離炭素量との分子量比
が1対1に近いように添加すれば未反応のケイ素もしく
は炭素が成形体に残存する量が少くなり、高温で高強度
な成形体となるので有利である。ただし、前記遊離炭素
の量は有機ケイ素高分子化合物の種類や加熱焼成の条件
等によつて異るが、通常有機ケイ素高分子化合物100
01)に対して0.2〜20重量%の割合で生成し残存
する。したがつて、上記金属ケイ素粉末の添加量は、粘
結剤として添加される有機ケイ素高分子化合物の添加量
、種類、焼成条件などから決定されるが、本発明におい
ては、後述するように有機ケイ素高分子化合物の添加は
、原料粉粒体に対して0.05〜20重量係の範囲で行
なうので、前記金属ケイ素の添加は全体に対して0.0
01〜8重量%の範囲で行なうことになる。本発明にお
いては、前記有機ケイ素高分子化合物よりなる粘結剤を
無機ケイ素化合物およびケイ素の粉末に対して、通常0
.05〜20重量%の範囲で添加し混和する。
In the present invention, these solids or viscous liquids can be used as they are as a binder. That is, these binders become liquids with low viscosity when heated at a relatively low temperature of around 300°C, so they are added to and mixed with a base consisting of a mixture of a heat-resistant inorganic silicon compound and metal silicon powder. At the initial stage when the green compact is heated and fired, it becomes a low-viscosity fluid and the organic matter containing hydrogen and silicon evaporates as volatile components, but the remaining carbon and silicon remain at a temperature of approximately 800°C.
From the above, the mixture gradually forms β-SiC, which begins to fill the gaps between the inorganic silicon compound powder and the silicon powder together with a small amount of remaining free carbon. The temperature further rises to 10
When the temperature reaches 00° C. or higher, the free carbon and metal silicon powder react to gradually generate SiC. Another 1250
When the temperature exceeds ℃, the grain boundaries of the inorganic silicon compound powder are occupied only by β-SiC of 5000 Å or less, which is converted and produced from the organosilicon polymer compound, and β-SiC, which is 100 It771 or less, which is produced by reaction from free carbon and metal silicon powder. It becomes like this. In other words, the excess material that existed at the beginning of heating either scatters and disappears, or it completely covers the inorganic silicon compound powder and silicon powder in the SiC base, and it is necessary to generate it during the subsequent heating process to a high temperature. Because it facilitates reactions and diffusion, it is an extremely advantageous binder that is extremely effective in producing a final, strongly bonded fired molded product. The chemical changes that occur during the heating process in the compacted body made of the above-mentioned starting materials will be explained below. As described above, the binder becomes a low viscosity fluid at the initial stage of heating and completely covers the inorganic silicon compound powder and the metallic silicon powder. As the heating temperature increases further,
The organosilicon polymer compound that is the binder is thermally decomposed, and mainly β-SiC and free carbon are produced and remain, while the others are volatilized. In such a heating process, the inorganic silicon compound powder particles are strongly bonded by the bonds between the powder particles and the bonds by β-SlC, but the β-SiC present at the grain boundaries is Since growth is inhibited, intragranular pores, which are normally formed during grain growth, are hardly present in the molded article of the present invention. In addition, the β-SiC present in grain boundaries, which is converted from organosilicon polymer compounds, is 1
When heated at 500° C. or lower, the particles usually exist as aggregates of particles with a diameter of 30 to 500 λ, so that the grain boundary region itself becomes a relatively low-density structure. However, the mechanical strength of the above-mentioned fine particle aggregates is extremely excellent due to the stress propagation relaxation mechanism unique to such aggregates, so even if the structure has a relatively low density, there will be no damage to the entire compact. This is a preferable form because it has the effect of improving thermal shock resistance without causing any adverse effects. In addition, SiC produced by reaction from metallic silicon and free carbon has a very small amount of metallic silicon and free carbon, so it is produced in an extremely small amount compared to the conversion-produced β-SiC described above, but the size of the particles is small. depends on the particle size of the metallic silicon powder added in advance. The smaller the particle size is, the easier the reaction with free carbon will be, which is advantageous; however, the generated SiC itself is surrounded by SiC fine particle aggregates converted from the above-mentioned organosilicon polymer compound, forming a strong bond. , mechanical strength is not adversely affected. Therefore, the particle size of metal silicon powder is 10μ
m or less is most preferable, but 101tm or more10
Even those down to 0 μm can be used advantageously. In addition, if the amount of metal silicon powder added is such that the molecular weight ratio to the amount of free carbon is close to 1:1, the amount of unreacted silicon or carbon remaining in the molded product will be reduced, and high strength molding at high temperatures will be possible. It is advantageous because it becomes the body. However, the amount of free carbon varies depending on the type of organosilicon polymer compound, heating and firing conditions, etc., but usually the amount of free carbon is 100%.
01) and remains at a ratio of 0.2 to 20% by weight. Therefore, the amount of the metal silicon powder added is determined based on the amount, type, firing conditions, etc. of the organosilicon polymer compound added as a binder. Since the silicon polymer compound is added in an amount of 0.05 to 20% by weight relative to the raw material powder, the amount of metal silicon added is 0.0% to the total weight.
It will be carried out in a range of 0.01 to 8% by weight. In the present invention, the binder made of the organosilicon polymer compound is added to the inorganic silicon compound and the silicon powder, usually at 0%.
.. Add and mix in a range of 0.05 to 20% by weight.

この添加量は、後述するように焼成の方法によつて異る
が、0.05(f)以下ではその添加効果に乏しく、強
結合・高強度な成形体が得難く、20(f)以上では、
粘結剤から転換生成し、粒界を占めるβ−SiCの相の
全体に対する割合がかなり大きくなるので、比較的低密
度な組織の領域が多くなりすぎてかえつて成形体全体の
強度の低下を招く上に、基地の無機ケイ素化合物の特性
を生かした成形体とはなり難い。加圧および焼成を行な
うには、大別すると、出発原料の混和粉粒を、例えば金
型プレス、静水圧プレス、押出しなどの圧粉法により1
00〜50001<g/(1−JモVfの圧力で加圧し、
所定の形状となしたのち、例えば抵抗加熱炉、高周波炉
などを用いる加熱方式により焼成する圧粉後の焼成方法
と、さらに、例えば黒鉛、アルミナ、窒化ホウ素などか
らなる適切な押型に前記混和粉粒を入れ100〜500
01<g/Crilの粉粒加圧を行ないながら焼成する
圧粉と焼成を同時に行なうホツトプレス法とを用いるこ
とができる。
The amount added varies depending on the firing method as described below, but if it is less than 0.05(f), the effect of addition is poor and it is difficult to obtain a molded product with strong bonding and high strength, and if it is more than 20(f) So,
Since the ratio of the β-SiC phase, which is converted from the binder and occupies the grain boundaries, to the whole becomes considerably large, the relatively low-density structure becomes too large, which actually reduces the strength of the entire compact. Moreover, it is difficult to obtain a molded article that takes advantage of the characteristics of the base inorganic silicon compound. In order to perform pressurization and firing, roughly speaking, the mixed powder particles of the starting raw material are pressed into a single powder by a powder compaction method such as die press, isostatic press, extrusion, etc.
00~50001<g/(pressurized at a pressure of 1-J mo Vf,
After forming the powder into a predetermined shape, the powder is fired by a heating method using, for example, a resistance heating furnace or a high frequency furnace. Add grains and add 100 to 500
It is possible to use a hot press method in which pressing and firing of the powder are performed simultaneously while pressing the powder to 01<g/Cril.

上記の焼成における雰囲気としては、真空中、不活性ガ
ス、COガス、水素ガス、有機ケイ素化合物ガスのうち
から選ばれるいずれか1種以上よりなる雰囲気を使用す
る。
As the atmosphere for the above-mentioned firing, an atmosphere consisting of at least one selected from vacuum, inert gas, CO gas, hydrogen gas, and organosilicon compound gas is used.

また、焼成は、無機ケイ素化合物の種類によつて異るが
、1000℃から1800℃までの温度範囲で行なう。
ただし、以上述べた焼成の条件は、基地の無機ケイ素化
合物や金属ケイ素粉末さらには有機ケイ素高分子化合物
に不利な変質などをもたらさないような条件を選んで設
定することが有利であり、例えば無機ケイ素化合物の融
点以下の加熱温度、これらとの反応により他の化合物を
作らないような雰囲気などを選択することが有利である
。本発明において焼成温度は1200〜1500℃の範
囲内がより好適である。
Further, the firing is performed at a temperature ranging from 1000°C to 1800°C, although it varies depending on the type of inorganic silicon compound.
However, it is advantageous to select and set the above-mentioned firing conditions so that they do not cause any disadvantageous alterations to the base inorganic silicon compound, metal silicon powder, or organosilicon polymer compound. It is advantageous to select a heating temperature below the melting point of the silicon compound, an atmosphere that does not create other compounds by reaction with these compounds, and the like. In the present invention, the firing temperature is more preferably within the range of 1200 to 1500°C.

前記有機ケイ素高分子化合物から転換したSiOは加熱
過程で無機ケイ素化合物粉粒と強固に結合するが、この
結合力は1500℃までの加熱過程では徐々に増大する
が、1500℃より高い温度の加熱ではそれほど結合力
の増大を示さず1500℃までの加熱による結合力です
でに充分高強度な成形体を得られる。このように、本発
明の方法における好適な加熱温度が、通常の耐熱性ケイ
素化合物を焼成する温度に較べてより低いことも本発明
の特徴の一つである。かくして得られる焼成成形体に下
記の如き処理を施すことにより、より高い密度を有する
高強度焼成成形体を得ることができる。
The SiO converted from the organosilicon polymer compound is strongly bonded to the inorganic silicon compound powder during the heating process, and this bonding strength gradually increases during the heating process up to 1500°C, but when heated at a temperature higher than 1500°C, In this case, the bonding force does not increase so much, and a molded article with sufficiently high strength can already be obtained with the bonding force generated by heating up to 1500°C. Thus, one of the features of the present invention is that the suitable heating temperature in the method of the present invention is lower than the temperature at which ordinary heat-resistant silicon compounds are fired. By subjecting the thus obtained fired molded product to the following treatments, a high strength fired molded product having higher density can be obtained.

前記焼成成形体に、10]!1H9以下の減圧下におい
て、液状にした前記有機ケイ素高分子化合物あるいは必
要により前記ケイ素金属微粉末を少量添加した有機ケイ
素高分子化合物を含浸させ、さらに、必要により加圧し
て前記含浸の度合いを高めたのち、真空中、不活性ガス
、水素ガス、COガスのうちから選ばれるいずれか少な
くとも1種の雰囲気中で1000℃〜1800℃の温度
範囲で加熱する一連の処理を少なくとも1回施すことに
よつて、より高密度な焼成成形体とすることができる。
前記含浸させる有機ケイ素高分子化合物は液状のものが
必要であるため、これらの化合物が液状で得られる場合
はそのまま、固体状で得られる場合は、比較的低い温度
で加熱することにより液状となし含浸させることができ
る。あるいは必要により、粘性を下げるため少量のベン
ゼン、トルエン、キシレン、ヘキサン、エーテル、テト
ラヒドロフラン、ジオキサン、クロロホルム、メチレン
クロリド、石油エーテル、石油ベンジン、リグロイン、
フロン、DMSO,.DMFlその他有機ケイ素高分子
化合物を可溶する溶媒を用いて溶解したものを使用する
ことができる。前記一連の処理は少くとも1回以上繰り
返し施すことにより、通常の焼成温度より比較的低い温
度で焼成しても、充分高密度な焼成成形体を得ることが
できる。前記含浸と焼成の繰り返しにより得られる成形
体は、上記処理の回数が多い程高密度なものが得られる
10]! Under reduced pressure of 1H9 or less, impregnate with the organosilicon polymer compound in liquid form or the organosilicon polymer compound to which a small amount of the silicon metal fine powder is added if necessary, and further pressurize if necessary to increase the degree of impregnation. After that, a series of treatments of heating in a temperature range of 1000°C to 1800°C in at least one atmosphere selected from inert gas, hydrogen gas, and CO gas in a vacuum is performed at least once. Therefore, a fired molded product with higher density can be obtained.
The organosilicon polymer compound to be impregnated needs to be in liquid form, so if these compounds are obtained in liquid form, they can be obtained as is, or if they are obtained in solid form, they can be heated at a relatively low temperature to turn them into liquid form. Can be impregnated. Alternatively, to reduce viscosity, a small amount of benzene, toluene, xylene, hexane, ether, tetrahydrofuran, dioxane, chloroform, methylene chloride, petroleum ether, petroleum benzine, ligroin,
Freon, DMSO, . It is possible to use a solution obtained by dissolving DMFl or other organosilicon polymer compound using a solvent. By repeating the above-mentioned series of treatments at least once, it is possible to obtain a fired molded product with a sufficiently high density even when firing at a temperature relatively lower than the usual firing temperature. The molded body obtained by repeating the above-mentioned impregnation and firing can have a higher density as the number of times of the above-mentioned treatment increases.

前述したように含浸処理を施す以前の焼成体はその結晶
粒界に比較的低密度な組織を有するSiO微粒子凝集体
を充填しているが、基地ケイ素化合物が粗大成長をして
いないため、この粒界は成形体の表面から内部まで連続
したものとして存在している。この連続した粒界の低密
度部分に含浸液が浸入”し、加熱によりβ−SiCへと
変化する。従つて、含浸および加熱処理の繰り返しによ
り、低密度粒界は徐々に高密度化され、これに伴い基地
セラミツクス粒子と粒界のβ−SiCとの結合力も強力
なものになるので、含浸および加熱処理の繰り返し回数
が多い程高密度・高強度な成形体が得られる。ただし、
成形体がほぼ理論密度に近づいたのちは、上記処理の繰
り返しによる効果はさほど顕著ではなくなる。また、必
要により、含浸した有機ケイ素高分子化合物から遊離す
る炭素と反応せしめるために予め微量の金属ケイ素粉末
を混合したものを含浸することもできる。上記金属ケイ
素粉末としてはできるだけ粒度の小さいものが好ましい
。このように、本発明の製造方法によれば、前記有機ケ
イ素高分子化合物が含浸可能なため、ホツトプレス法を
用いることなく高密度・高強度な成形体を得ることがで
きるので有利である。次に本発明を実施例について説明
する。
As mentioned above, before the impregnation treatment, the fired body has its grain boundaries filled with SiO fine particle aggregates with a relatively low density structure, but this is because the base silicon compound has not grown coarsely. Grain boundaries exist continuously from the surface to the inside of the compact. The impregnating liquid infiltrates into the low-density part of this continuous grain boundary and changes to β-SiC by heating. Therefore, by repeating the impregnation and heat treatment, the low-density grain boundary gradually becomes densified. Along with this, the bonding force between the base ceramic particles and the β-SiC at the grain boundaries becomes stronger, so the more times the impregnation and heat treatment are repeated, the higher the density and strength of the molded product can be obtained.However,
After the compact approaches approximately the theoretical density, the effect of repeating the above treatment becomes less pronounced. Further, if necessary, a small amount of metal silicon powder mixed in advance may be impregnated in order to react with carbon liberated from the impregnated organosilicon polymer compound. The metal silicon powder preferably has a particle size as small as possible. As described above, according to the manufacturing method of the present invention, since the organosilicon polymer compound can be impregnated, a molded article having high density and high strength can be obtained without using a hot pressing method, which is advantageous. Next, the present invention will be explained with reference to examples.

実施例 1 ドデカメチルシクロヘキサシランをオートクレーブに入
れ、Ar雰囲気中で450℃で30時間熱処理し、固体
状ポリカルボシランを得た。
Example 1 Dodecamethylcyclohexasilane was placed in an autoclave and heat treated at 450° C. for 30 hours in an Ar atmosphere to obtain solid polycarbosilane.

このポリカルボシランの平均分子量は1700であつた
。純度99.5%以上で800メツシユ以下のSiC粉
末に重量比で10(:f)にあたる上記ポリカルボシラ
ンと純度99.99(:f)以上で800メツシユ以下
のSi粉末を約1.4重量%添加し、充分に混捏した後
、金型プレスを用いて、約2500k9/(1−JモV1
の圧力で加圧し、10X10×40mdの角柱状加圧体
を製造した。この加圧体を1気圧のAr雰囲気中で13
00℃まで100をC/Hrの昇温速度で加熱し、1時
間保持して焼成成形体を得た。この成形体と気孔率がは
ぼ同じ従来品であるS!3N4結合SiC成形体との性
質の比較を第4表に示す。上表から、本発明品の抗折力
は従来品に比較して著しく高い上に、その高温特性も極
めて優れていることが判る。
The average molecular weight of this polycarbosilane was 1,700. SiC powder with a purity of 99.5% or more and 800 meshes or less and the above polycarbosilane with a weight ratio of 10 (:f) and about 1.4 weight of Si powder with a purity of 99.99 (:f) or more and 800 meshes or less. After adding % and kneading thoroughly, use a mold press to make approximately 2500k9/(1-JMo V1).
A prismatic pressurized body of 10×10×40 md was manufactured. This pressurized body was placed in an Ar atmosphere of 1 atm for 13
The sample was heated to 00° C. at a heating rate of C/Hr and held for 1 hour to obtain a fired molded body. S! is a conventional product with almost the same porosity as this molded body! Table 4 shows a comparison of properties with the 3N4 bonded SiC molded body. From the above table, it can be seen that the transverse rupture strength of the product of the present invention is significantly higher than that of the conventional product, and its high-temperature properties are also extremely excellent.

このものを走査型電子顕微鏡で組織観察したところ、図
に破断面を写真で示した如く、基地のSiC粒子は10
〜25μm直径の大きさであり、粗大成長粒は見られず
また粒内には空孔が殆んど見られなかつた。さらに粒界
にはケイ素粉末と遊離炭素が反応して生成し1ψ−Sl
C粒と、ポリカルボシランが転換した低密度組織を有す
る5000A以下のβ型微結晶SiCとが存在し、これ
らは基地のSiCと密着結合をなしていることが判明し
た。また、遊離炭素の存在は検知されなかつた。本例の
ように、SiCを基地とした場合は、成形体にはSiC
のみが存在し、他の不純物の存在しない高純度SiC成
形体を得ることができるので、本発明によつて製造され
た成形体は、高温強度に優れた材料として使用される以
外に、高純度製品として電子工業の分野においても使用
されることが期待できる新規な材料である。実施例 2 前記実施例1で用いたポリカルボシランを粉砕したもの
に粒径2μm以下のSi微粉末を重量比で5係添加し、
混合したものを、同じく実施例1で得た焼成成形体とと
もにオートクレープに入れた。
When the structure of this material was observed using a scanning electron microscope, it was found that the SiC particles of the base were 10
The diameter was ~25 μm, no coarsely grown grains were observed, and almost no pores were observed within the grains. Furthermore, silicon powder and free carbon react to form 1ψ-Sl at the grain boundaries.
It was found that there were C grains and β-type microcrystalline SiC of 5000 A or less having a low-density structure converted from polycarbosilane, and these formed a tight bond with the base SiC. Also, the presence of free carbon was not detected. As in this example, when SiC is used as the base, the molded body contains SiC
Since it is possible to obtain a high-purity SiC molded body in which only SiC is present and no other impurities are present, the molded body manufactured by the present invention can be used as a material with excellent high-temperature strength, and can also be used as a high-purity SiC molded body without any other impurities. It is a new material that can be expected to be used as a product in the electronic industry. Example 2 Five parts by weight of Si fine powder with a particle size of 2 μm or less was added to the pulverized polycarbosilane used in Example 1,
The mixture was placed in an autoclave together with the fired compact obtained in Example 1.

これを10−2m1H9の減圧にした後、約350℃に
加熱し1時間保持し、さらにArlOO気圧を入れ30
分間保持して含浸処理を施した。この含浸後の成形体を
とり出しAr雰囲気中で1300℃まで8時間かけて加
熱し、1時間保持して新たな含浸後加熱処理成形体を得
た。このものの密度は−2.959/CTdであり、理
論密度の91.6%に達した。このものに更に、上記と
同様な条件でポリカルボシランの含浸と加熱処理を行な
つた。このような含浸後加熱処理を合計5回繰り返し、
各回毎に密度と抗折力を測定したものを第5表に示す。
4上表から明らかなように、含浸後加熱処理を繰返す回
数が多い程、密度と強度は増大する。
After reducing the pressure to 10-2 m1H9, it was heated to about 350°C and held for 1 hour, and then ArlOO air pressure was added and the pressure was increased to 30°C.
Impregnation treatment was performed by holding for a minute. The impregnated molded body was taken out, heated to 1300° C. over 8 hours in an Ar atmosphere, and held for 1 hour to obtain a new post-impregnated heat-treated molded body. The density of this material was -2.959/CTd, reaching 91.6% of the theoretical density. This material was further impregnated with polycarbosilane and heat treated under the same conditions as above. Such post-impregnation heat treatment was repeated a total of 5 times,
Table 5 shows the density and transverse rupture strength measured each time.
4 As is clear from the above table, the density and strength increase as the number of times the post-impregnation heat treatment is repeated.

含浸後加熱処理を5回施して得られた成形体について抗
折力の温度依存性を測定したところ、室温から1400
℃までほぼ一定で38.4kg/M7lを示し、150
0℃では35.7kg/m1!、1600℃では31.
6kg/7n21!であり、この成形体が高温強度にも
極めて優れていることが判明した。本例のように、有機
ケイ素高分子化合物の含浸および加熱処理を繰り返すこ
とで比較的高い密度を有する成形体を容易に得ることが
できる。実施例 3 ジメチルジクロロシランから得た固体状ポリカルボシラ
ンを、純度99.501)で800メツシユ以下のSl
3N4粉末と純度99.99(f)で粒度5μm以下の
Si粉末との混合物に、添加した混捏したものに2t0
n/Crilの金型によるプレスを施し、10×10×
407ndの加圧体とした。
When the temperature dependence of the transverse rupture strength was measured for the molded product obtained by applying heat treatment five times after impregnation, it was found that the temperature dependence of the transverse rupture strength was
It shows a constant value of 38.4 kg/M7l up to 150°C.
35.7kg/m1 at 0℃! , 31. at 1600℃.
6kg/7n21! It was found that this molded product also has excellent high-temperature strength. As in this example, by repeating impregnation with an organosilicon polymer compound and heat treatment, a molded article having a relatively high density can be easily obtained. Example 3 A solid polycarbosilane obtained from dimethyldichlorosilane was prepared with a purity of 99.501) and an Sl of 800 mesh or less.
2t0 was added to the mixture of 3N4 powder and Si powder with a purity of 99.99 (f) and a particle size of 5 μm or less.
Pressed with n/Cril mold, 10×10×
A 407nd pressure body was used.

前記加圧体中のポリカルボシランとSi粉末の重量百分
比率はそれぞれ7.0%と1.0(:flとなるよう調
合した。
The weight percentages of polycarbosilane and Si powder in the pressurized body were adjusted to be 7.0% and 1.0 (:fl), respectively.

この加圧体を1気圧のAr雰囲気中で1300℃まで1
20をC/Hrの昇温速度で加熱し、1時間保持して焼
成成形体を得た。このものの性質と従来のSi3N4ホ
ツトプレス成形体の性質とを第6表に示す。
This pressurized body was heated to 1300℃ in an Ar atmosphere of 1 atm.
20 was heated at a temperature increase rate of C/Hr and held for 1 hour to obtain a fired molded body. Table 6 shows the properties of this product and those of a conventional Si3N4 hot press molded product.

第6表のように、本発明による成形体は、従来のSi3
N4−MgO系ホツトプレス成形体に比較すると、室温
から約1000℃までの強度は少し劣るが、1000℃
以上では、逆に本成形品の方が高強度になり、しかもこ
の高強度は15000C以上の高温まではぼ維持される
As shown in Table 6, the molded body according to the present invention is different from the conventional Si3
Compared to N4-MgO hot press molded products, the strength from room temperature to about 1000℃ is slightly inferior, but at 1000℃
In contrast, the molded product has higher strength, and this high strength is maintained up to a high temperature of 15000C or higher.

この高特性は、本成形品中には、従来品に含まれるMg
SiO3のような高温で強度の低下を招くガラス質相を
含まず、Si3N4を主として他は微結晶SiCからな
る相のみが存在することに起因する。従つて、本成形体
は少なくとも1500℃まで使用できる新規の高強度耐
熱材料である。実施例 4 ポリシラン約93重量%とジカルボニル・シフタジエン
・モリブデナム(MOC,OHl2O2)約7重量%よ
りなる混合物をオートクレープ中で450℃で24時間
反応させて、MO元素を約3重量%含む固体状ポリカル
ボシランを得た。
This high property is due to the fact that this molded product contains Mg, which is contained in conventional products.
This is due to the fact that it does not contain a glassy phase such as SiO3, which causes a decrease in strength at high temperatures, and only a phase consisting of mainly Si3N4 and other microcrystalline SiC is present. Therefore, this molded article is a new high-strength heat-resistant material that can be used up to at least 1500°C. Example 4 A mixture consisting of about 93% by weight of polysilane and about 7% by weight of dicarbonyl siftadiene molybdenum (MOC, OHl2O2) was reacted in an autoclave at 450°C for 24 hours to form a solid containing about 3% by weight of the MO element. A polycarbosilane was obtained.

純度99.5%のMOSi2の800メツシユ以下の粉
末に、純度99.9901)の粒度1μm以下の金属S
i粉末を重量比で0.5#)添加してなる混合体に、上
記MO元素を含むポリカルボシランを5重量%添加して
混捏したのち、黒鉛製ホツトプレス押型中に設置し、1
気圧のAr雰囲気中で、約300k9/Cdの圧力を加
えながら、1400℃に達するまで5時間かけたのち、
30分間保持して15φ刈5Lm1Lのホツトプレス成
形体を得た。このものの性質と比較のための従来品の性
質を第7表に示した。一般に遷移金属のケイ化物は、炭
化物あるいはホウ化物に比較して耐酸化性は優れている
ものの耐熱衝撃性に数段劣るため耐熱材料としての使用
には制限があつたが、本実施例に示したMOSi2の粒
界にβ−SiCを稠密に充填した成形体は、1200℃
から水焼入れして破断に至る平均回数は20回以上であ
り、従来のMOSi2のみからなる成形体の9回にくら
べると、著しく耐熱衝撃性が向上したことが判明した。
また、本成形体は、耐酸化性、耐摩耗性および耐食性と
もに優れた性質を有しているので、従来のMOSi2が
使用されていた抵抗発熱体材料あるいはルツボ材料とし
てのみならず種々の構造材料としても広範囲に使用でき
る新規な材料である。なお、上記実施例においては代表
的な耐熱性無機ケイ素化合物の焼成成形体およびその製
造方法について数列を示したが、これ以外の種々の耐熱
性無機ケイ素化合物についても全く同様に優れた高強度
焼成成形体となすことができる。
Metal S with a purity of 99.9901) and a particle size of 1 μm or less is added to a powder of 800 mesh or less of MOSi2 with a purity of 99.5%.
After adding 5% by weight of polycarbosilane containing the above MO element to a mixture obtained by adding i powder (0.5 # by weight ratio) and kneading, the mixture was placed in a graphite hot press mold, and 1
After applying a pressure of approximately 300k9/Cd in an Ar atmosphere at atmospheric pressure for 5 hours until the temperature reached 1400°C,
After holding for 30 minutes, a hot press molded product having a diameter of 15 mm and a size of 5 Lm1 L was obtained. The properties of this product and those of the conventional product for comparison are shown in Table 7. In general, silicides of transition metals have superior oxidation resistance compared to carbides or borides, but their thermal shock resistance is several orders of magnitude lower, which limits their use as heat-resistant materials. The molded body in which the grain boundaries of MOSi2 were densely filled with β-SiC was heated at 1200°C.
The average number of times the molded product was water quenched to break was more than 20 times, which was 9 times for the conventional molded body made only of MOSi2, and it was found that the thermal shock resistance was significantly improved.
In addition, this molded product has excellent properties in terms of oxidation resistance, wear resistance, and corrosion resistance, so it can be used not only as a resistance heating element material or crucible material for which conventional MOSi2 has been used, but also as a variety of structural materials. It is a new material that can be used in a wide range of applications. In addition, in the above examples, a series of typical heat-resistant inorganic silicon compound fired compacts and their manufacturing methods are shown, but other heat-resistant inorganic silicon compounds can also be used to produce similarly excellent high-strength fired products. It can be made into a molded body.

以上述べたところにより、本発明によれば金属ケイ素粉
末を添加した基地ケイ素化合物に粘結剤として、ケイ素
と炭素を主たる骨格成分とする有機ケイ素高分子化合物
を用いることにより高強度な焼成成形体となすことがで
き、さらにこのものに前記有機ケイ素化合物を含浸させ
たのち焼成することにより高密度で高強度な焼成成形対
となすことができ、このような焼成成形体は、航空宇宙
工業、金属冶金工業、船舶自動車工業、石油化学工業、
セラミツクス工業、電子工業、電気化学工業、原子カ工
業その他高強度耐熱性成形体材料が必要とされる種々の
分野において極めて有効に使用されることが期待できる
As described above, according to the present invention, a high-strength fired molded product is obtained by using an organosilicon polymer compound whose main skeleton components are silicon and carbon as a binder in a base silicon compound to which metal silicon powder is added. Furthermore, by impregnating this material with the organosilicon compound and firing it, a high-density and high-strength fired molded body can be obtained.Such fired molded bodies are used in the aerospace industry, Metal metallurgy industry, ship and automobile industry, petrochemical industry,
It can be expected that it will be extremely effectively used in the ceramics industry, electronics industry, electrochemical industry, nuclear industry, and other various fields where high-strength, heat-resistant molded material is required.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の焼成成形体の走査型電子顕微鏡写真である
The figure is a scanning electron micrograph of the fired compact of the present invention.

Claims (1)

【特許請求の範囲】 1 耐熱性無機ケイ素化合物紛粒体と金属ケイ素紛末と
の混合物に、炭素とケイ素を主な骨格成分とする有機ケ
イ素高分子化合物を添加、混和してなる混和物を加工成
形する工程と真空中、不活性ガス、COガス、水素ガス
、有機化合物ガスのうちから選ばれる何れか少なくとも
1種からなる雰囲気中で1000〜1800℃の温度範
囲内で前記混合物の加工成形体を加熱焼成する工程とを
包含してなる前記紛粒体のそれぞれの粒子の粒界が実質
的に下記(イ)、(ロ)の2種類のSiC粒子により緻
密に充填されてなる高温強度に優れた耐熱性無機ケイ素
化合物焼成形体の製造方法。 (イ)有機ケイ素高分子化合物から生成される5000
Å以下のβ−SiC微粒子。 (ロ)金属ケイ素紛末と前記有機ケイ素高分子化合物か
ら生成される遊離炭素とから反応生成される100μm
以下のβ−SiC粒子。 2 耐熱性無機ケイ素化合物紛粒と金属ケイ素紛末との
混合物に、炭素とケイ素を主な骨格成分とする有機ケイ
素高分子化合物を添加、混和してなる混合物を加工成形
する工程と、真空中、不活性ガス、COガス、水素ガス
、有機化合物ガスのうちから選ばれる何れか少なくとも
1種からなる雰囲気中で1000〜1800℃の温度範
囲内で前記混和物の加工成形体を加熱焼成する工程によ
り製造される焼成成形体に、前記有機ケイ素高分子化合
物、あるいは金属ケイ素微紛末を混和した有機ケイ素高
分子化合物を含浸させたのち、真空中、不活性ガス、C
Oガス、水素ガス、有機化合物ガスのうちから選ばれる
少なくとも1種からなる雰囲気中で1000〜1800
℃の温度範囲内で加熱する前記含浸と加熱との一連の処
理を1回もしくは2回以上施してなる焼成成形体の粒子
の粒界が実質的に下記(イ)、(ロ)の2種類のSiC
粒子により緻密に充填されてなる耐熱性無機ケイ素化合
物焼成成形体の製造方法。 (イ)有機ケイ素高分子化合物から生成される5000
Å以下のβ−SiC微粒子。 (ロ)金属ケイ素紛末と前記有機ケイ素高分子化合物か
ら生成される遊離炭素とから反応生成される100μm
以下のβ−SiC粒子。
[Claims] 1. A mixture obtained by adding and mixing an organosilicon polymer compound whose main skeleton components are carbon and silicon to a mixture of heat-resistant inorganic silicon compound powder and metal silicon powder. Processing and forming the mixture in vacuum, in an atmosphere consisting of at least one selected from inert gas, CO gas, hydrogen gas, and organic compound gas within a temperature range of 1000 to 1800°C. The grain boundaries of each particle of the powder body are substantially densely filled with the following two types of SiC particles (a) and (b), and the high-temperature strength is obtained by heating and firing the body. A method for producing a heat-resistant inorganic silicon compound sintered compact. (a) 5000 produced from organosilicon polymer compounds
β-SiC fine particles of Å or less. (b) 100 μm produced by reaction between metal silicon powder and free carbon produced from the organosilicon polymer compound.
The following β-SiC particles. 2 Processing and molding a mixture obtained by adding and mixing an organosilicon polymer compound whose main skeleton components are carbon and silicon to a mixture of heat-resistant inorganic silicon compound powder and metal silicon powder, and , a step of heating and firing the processed molded product of the mixture within a temperature range of 1000 to 1800°C in an atmosphere consisting of at least one selected from inert gas, CO gas, hydrogen gas, and organic compound gas. After impregnating the fired molded body produced by the method with the organosilicon polymer compound or an organosilicon polymer compound mixed with metal silicon fine powder, the fired molded body is heated in vacuum with an inert gas, C.
1000 to 1800 in an atmosphere consisting of at least one selected from O gas, hydrogen gas, and organic compound gas.
The grain boundaries of the particles of the fired compact obtained by applying the series of impregnation and heating processes once or twice or more within the temperature range of ℃ are substantially of the following two types (a) and (b). SiC
A method for producing a heat-resistant inorganic silicon compound fired molded body densely filled with particles. (a) 5000 produced from organosilicon polymer compounds
β-SiC fine particles of Å or less. (b) 100 μm produced by reaction between metal silicon powder and free carbon produced from the organosilicon polymer compound.
The following β-SiC particles.
JP51070348A 1976-06-17 1976-06-17 Method for manufacturing high-strength, heat-resistant silicon compound fired moldings Expired JPS593955B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51070348A JPS593955B2 (en) 1976-06-17 1976-06-17 Method for manufacturing high-strength, heat-resistant silicon compound fired moldings

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51070348A JPS593955B2 (en) 1976-06-17 1976-06-17 Method for manufacturing high-strength, heat-resistant silicon compound fired moldings

Publications (2)

Publication Number Publication Date
JPS52154816A JPS52154816A (en) 1977-12-22
JPS593955B2 true JPS593955B2 (en) 1984-01-26

Family

ID=13428822

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS593955B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55116667A (en) * 1979-02-28 1980-09-08 Asahi Glass Co Ltd Silicon carbide sintered body
US4737327A (en) * 1983-02-07 1988-04-12 Kurosaki Refractories Co., Ltd. Process for producing silicon carbide sintered product
JPS62283872A (en) * 1986-05-29 1987-12-09 黒崎窯業株式会社 Silicon nitride base sintered body and manufacture
JPS62288170A (en) * 1986-06-05 1987-12-15 黒崎窯業株式会社 Silicon nitride base sintered body and manufacture
JP4136319B2 (en) 2000-04-14 2008-08-20 日本碍子株式会社 Honeycomb structure and manufacturing method thereof
JP4307781B2 (en) * 2001-03-30 2009-08-05 日本碍子株式会社 Silicon carbide based porous material and method for producing the same

Also Published As

Publication number Publication date
JPS52154816A (en) 1977-12-22

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