JPS596550A - Semiconductor element fixing device - Google Patents
Semiconductor element fixing deviceInfo
- Publication number
- JPS596550A JPS596550A JP57116074A JP11607482A JPS596550A JP S596550 A JPS596550 A JP S596550A JP 57116074 A JP57116074 A JP 57116074A JP 11607482 A JP11607482 A JP 11607482A JP S596550 A JPS596550 A JP S596550A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- work
- horizontal direction
- workpiece
- collet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
Landscapes
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体素子を加熱j、たワークに圧着させ、
両者をすり合わせることにより共晶合金を生成して接合
する半導体素子固着装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention involves compressing a semiconductor element onto a heated workpiece,
This invention relates to a semiconductor element fixing device that generates a eutectic alloy by rubbing the two together to bond them.
半導体装置の製造工程のうち、いわゆるダイボンディン
グ工程は、400〜500℃の加熱状態で半導体素子を
ワークに圧着させ、その両者をすシ合せることにより金
−シリコンの共晶合金を生成して半導体素子をワークに
固着する工程である。Among the manufacturing processes for semiconductor devices, the so-called die bonding process involves pressing a semiconductor element onto a workpiece under heating at 400 to 500°C, and then bonding the two together to form a gold-silicon eutectic alloy to bond the semiconductor. This is the process of fixing the element to the workpiece.
従来の半導体素子固着装置には、カム方式と超音波方式
の二種類がある。従来のカム方式を第1図囚、(B)に
示す。すなわち、半導体素子1はコレット2に保持され
半導体素子加圧用はね5でワーク4に圧着され、ワーク
4はヒータブロック5にワーククランプ6でクランプさ
れる。モータ駆動で上スクラブカム7を動作させてコレ
ット2を水平方向に振巾運動させ、一方、下スクラブカ
ム8でヒータブロック5を垂直面内で揺動運動させて半
導体素子1とワーク4とをすり合せていた。There are two types of conventional semiconductor device fixing devices: a cam type and an ultrasonic type. The conventional cam system is shown in Figure 1 (B). That is, the semiconductor element 1 is held by the collet 2 and pressed onto the workpiece 4 by the semiconductor element pressurizing spring 5, and the workpiece 4 is clamped to the heater block 5 by the workpiece clamp 6. The upper scrub cam 7 is driven by a motor to move the collet 2 horizontally, while the lower scrub cam 8 swings the heater block 5 in a vertical plane to separate the semiconductor element 1 and workpiece 4. They were rubbing together.
しかしながら、従来のカム方式では、半導体素子1に対
しワーク4が揺動するから、安定した金−シリコン合金
状態を得るだめに両者をその全面で接触させるに至るま
では多大の時間を要し、また半導体素子の大小、すり合
わせ面の状態により安定した金−シリコン合金状態が得
られないという欠点があった。However, in the conventional cam method, since the workpiece 4 swings relative to the semiconductor element 1, it takes a lot of time to bring the two into contact over their entire surfaces in order to obtain a stable gold-silicon alloy state. Another disadvantage is that a stable gold-silicon alloy state cannot be obtained depending on the size of the semiconductor element and the condition of the mating surfaces.
もつとも、従来のカム方式ではコレット2の振巾運動の
速度が遅いことが、安定した金−シリコン合金状態を短
時間で得ることを阻害する原因になっていることもある
のヤ、従来の超音波方式ではこの点の改良がなされてい
る。すなわち、第2回に示すように、発振器9より発生
した超音波を振動子10で振動に変換し、さらにホーン
11で増幅してこれを半導体素子1の上面直上方向から
与えて半導体素子1を振動させると共に、モータ、駆動
により下スクラブカム8でヒータブロック5を垂直面内
で揺動運動させて、半導体素子1とワーク4とをすり合
せていた。However, in the conventional cam system, the slow speed of the swinging motion of the collet 2 may be a cause of preventing a stable gold-silicon alloy state from being obtained in a short time. The sonic method has been improved in this respect. That is, as shown in the second part, the ultrasonic waves generated by the oscillator 9 are converted into vibrations by the vibrator 10, further amplified by the horn 11, and applied from directly above the top surface of the semiconductor element 1 to vibrate the semiconductor element 1. In addition to vibration, the lower scrub cam 8 is driven by a motor to swing the heater block 5 in a vertical plane to rub the semiconductor element 1 and the workpiece 4 together.
しかしながら、従来の超音波方式の場合では、ばね3に
よる加圧方向と超音波振動負荷方向とが同一であるだめ
に、ばね3の加圧力を大きくすると、素子1の破壊値以
上のスクラブエネルギーにな、つだ場合、逃けがないた
め素子そのものが破壊きれるという欠点があった。そこ
で、ばね3の加圧力を小さくすると、素子1とワーク4
との圧着度合が弱くなるから、金−シリコン合金状態が
不安定になるばかりでなく、半導体素子1がコレット2
から外れてしまう等の欠点があった。However, in the case of the conventional ultrasonic method, since the direction of pressure applied by the spring 3 and the direction of the ultrasonic vibration load are the same, if the pressure applied by the spring 3 is increased, the scrubbing energy exceeds the destruction value of the element 1. In the case of Tsuda, there was a drawback that the element itself could be destroyed because there was no escape. Therefore, if the pressing force of the spring 3 is reduced, the element 1 and the workpiece 4
Since the degree of compression between the collet 2 and the gold-silicon alloy becomes weaker, not only will the state of the gold-silicon alloy become unstable, but also the semiconductor element 1 will be attached to the collet 2.
There were some drawbacks such as it falling off.
本発明は前記問題点を解消するもので、ワークの保持テ
ーブル機構を水平方向に振巾運動可能に設置するととも
に、半導体素子保持用コレットをテーブル機構直上の定
位置に股部したことを特徴とするものである。The present invention solves the above-mentioned problems, and is characterized in that the table mechanism for holding the workpiece is installed so as to be able to swing in the horizontal direction, and the collet for holding semiconductor elements is placed at a fixed position directly above the table mechanism. It is something to do.
以下、本発明の一実施例を図によって説明する。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
尚、第1図囚、(B)、第2図と同一の構成部分につい
ては同一符号を付して説明する。Components that are the same as those in FIGS. 1 and 2 will be described with the same reference numerals.
第3図(5)、(B)に示すように、本発明は半導体素
子1を加熱したワーク4に圧着させ、両者をすり合せる
ことにより共晶合金を生成して互いに接合する半導体素
子固着装置において、前記ワーク4の保持テーブル機構
を水平方向に振巾運動可能に設置するとともに、半導体
素子保持用コレット2を保持テーブル機構直上の定位置
に設置したものである。実施例では1.ワーク4の保持
テーブル機構は次の構成となっている。すなわち、基板
12上で水平方向へ摺動するステージ16上に支柱14
を介してヒータブロック5が固定して設置されている。As shown in FIGS. 3(5) and 3(B), the present invention is a semiconductor element fixing device that presses a semiconductor element 1 onto a heated workpiece 4 and rubs them together to generate a eutectic alloy and bond them together. In this case, the holding table mechanism for the workpiece 4 is installed so as to be able to swing in the horizontal direction, and the semiconductor element holding collet 2 is installed at a fixed position directly above the holding table mechanism. In the example, 1. The holding table mechanism for the workpiece 4 has the following configuration. That is, the support 14 is placed on a stage 16 that slides horizontally on the substrate 12.
A heater block 5 is fixedly installed via the.
このヒータブロック5上に、ワーククランプ6で操作し
てワーク4をセットする。また、支柱14にホーン11
を突き合せ、引戻しスプリング13で牽引してその両者
間を密着させる。A workpiece 4 is set onto this heater block 5 by operating a workpiece clamp 6. Also, the horn 11 is attached to the pillar 14.
are brought into contact with each other and pulled by a pullback spring 13 to bring them into close contact.
実施例において、先ずワーククランプ6でワーク4をヒ
ータブロック5にセットし、一方、半導体素子1をはね
ろ及びコレット2で保持してこれをワーク4上面に圧着
する。次いで、発振器9より発生した超音波或いは音波
を振動子10で振動に変換し、これをホーン11で増幅
してステージ13及びヒータブロック5を水平方向に振
巾運動させる。本発明では半導体素子1は水平方向への
動きが規制されており、この素子1に対してワーク4が
水平方向に振巾運動するので、半導体素子1の下面とワ
ーク4の上面とはその全面部分で接触してすり合わされ
、共晶合金が生成されて両者は接合される。また、超音
波によりステージ13及びヒータブロック5を振巾運動
させるならば、これらの水平方向の振巾は小さく、した
がってワーク4に対する半導体素子1の固着位置精度が
向上する。In the embodiment, first, a workpiece 4 is set on the heater block 5 using a workpiece clamp 6, and a semiconductor element 1 is held by a flywheel and a collet 2 and pressed onto the upper surface of the workpiece 4. Next, the ultrasonic waves or sound waves generated by the oscillator 9 are converted into vibrations by the vibrator 10, which is amplified by the horn 11 to cause the stage 13 and the heater block 5 to swing in the horizontal direction. In the present invention, the movement of the semiconductor element 1 in the horizontal direction is restricted, and the workpiece 4 swings in the horizontal direction with respect to the element 1, so that the lower surface of the semiconductor element 1 and the upper surface of the workpiece 4 are separated from each other over the entire surface thereof. They touch and rub together, forming a eutectic alloy and joining the two. Further, if the stage 13 and the heater block 5 are moved in a swinging motion using ultrasonic waves, the swinging width in the horizontal direction thereof is small, and therefore the precision of the fixing position of the semiconductor element 1 to the workpiece 4 is improved.
以上のように、本発明は水平方向への動きを規制して半
導体素子をワークの直上から圧着(、−7だ状態でワー
クを水平方向に振巾運動させるので、半導体素子とワー
クとをその全面部分で面接触によりすり合わさせ接合さ
せるため、半導体素子の大小、裏面状態に拘らず、信頼
性ある金−シリコン合金状態を得ることができる。さら
に、半導体素子に対しワークをその圧着方向と直角方向
に振巾運動させるため、加圧ばねが半導体素子を保護す
ることになり、超音波によりワークを振動させても支障
を来たすことなく、短時間で信頼性のある合金状態を得
ることができるばかりか、素子に対するワークの水平方
向への振巾が少なくなり、その両者の固着位置精度を向
上できる効果を有するものである。As described above, the present invention restricts the movement in the horizontal direction and presses the semiconductor element directly above the workpiece (-7) and moves the workpiece in the horizontal direction, so that the semiconductor element and the workpiece are Since the entire surface is rubbed and bonded by surface contact, a reliable gold-silicon alloy state can be obtained regardless of the size of the semiconductor element or the state of the back surface.Furthermore, the workpiece is pressed against the semiconductor element in the direction of the bonding. Since the swing motion is made in the right angle direction, the pressure spring protects the semiconductor element, and even when the workpiece is vibrated by ultrasonic waves, there is no problem and a reliable alloy state can be obtained in a short time. Not only is this possible, but the horizontal swinging width of the work relative to the element is reduced, which has the effect of improving the accuracy of the fixing position of both.
第1図(4)は従来のカム方式固着装置の正面図、第1
図の)は側面図、第2図は従来の超音波方式固着装置の
正面図、第5図囚は本発明装置の一実施例を示す正面図
、第3図(B)は側面図である。Figure 1 (4) is a front view of the conventional cam type fixing device.
) is a side view, FIG. 2 is a front view of a conventional ultrasonic fixing device, FIG. 5 is a front view showing an embodiment of the device of the present invention, and FIG. 3(B) is a side view. .
Claims (1)
者をすり合せることにより共晶合金を生成して接合する
半導体素子固着装置において、前記ワークの保持テーブ
ル機構を水平方向に振巾運動可能に膜力するとともに、
半導体素子保持用コレットを保持テーブル機構直上の定
位置に設置したことを特徴とする半導体素子固着装置。+11 In a semiconductor element fixing device that presses a semiconductor element onto a heated workpiece and rubs them together to generate a eutectic alloy and bond them together, a film force is applied to a holding table mechanism for the workpiece so that it can swing in the horizontal direction. With,
A semiconductor device fixing device characterized in that a semiconductor device holding collet is installed at a fixed position directly above a holding table mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116074A JPS596550A (en) | 1982-07-02 | 1982-07-02 | Semiconductor element fixing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116074A JPS596550A (en) | 1982-07-02 | 1982-07-02 | Semiconductor element fixing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS596550A true JPS596550A (en) | 1984-01-13 |
Family
ID=14678062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57116074A Pending JPS596550A (en) | 1982-07-02 | 1982-07-02 | Semiconductor element fixing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS596550A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196544A (en) * | 1985-02-25 | 1986-08-30 | Rohm Co Ltd | Die-bonding for semiconductor chip |
-
1982
- 1982-07-02 JP JP57116074A patent/JPS596550A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196544A (en) * | 1985-02-25 | 1986-08-30 | Rohm Co Ltd | Die-bonding for semiconductor chip |
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