JPS6010652A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6010652A JPS6010652A JP58119206A JP11920683A JPS6010652A JP S6010652 A JPS6010652 A JP S6010652A JP 58119206 A JP58119206 A JP 58119206A JP 11920683 A JP11920683 A JP 11920683A JP S6010652 A JPS6010652 A JP S6010652A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- metal
- metal electrode
- semiconductor device
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
- H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は半導体集積回路、特に樹脂封止型集積回路の半
導体チップ上に設けられている金属電極に接する酸化膜
に、金属電極の湿気による腐食を防止する目的で、不純
物であるリンを含まない酸化膜構造を有することを特徴
とする半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an oxide film in contact with a metal electrode provided on a semiconductor chip of a semiconductor integrated circuit, particularly a resin-sealed integrated circuit, for the purpose of preventing corrosion of the metal electrode due to moisture. The present invention relates to a semiconductor device characterized by having an oxide film structure that does not contain phosphorus, which is an impurity.
樹脂封止型集積回路は、半導体チップのパッジベージ、
７技術の進歩によりその耐湿性は著しく向上している。Resin-sealed integrated circuits are packaged semiconductor chips,
7 Due to advances in technology, its moisture resistance has improved significantly.
耐湿性向上を目的として、窒化膜。Nitride film for the purpose of improving moisture resistance.
ＰＳＧ膜（Ｐｈｏｓｐｈｏｒｕｓ ５ｉｌｉｃａｔｅｄ
Ｇｌａｓｓ ）等のパッシベーション膜が用いられ、
更に必要に応じて、種々のコーテイング材が用いられて
いる。しかしながら、半導体チップに設けられている金
属電極は、容器の外部端子と金属細線とにより接続しな
ければならず、パッシベーション膜による保護はされな
いため、金属電極は金属面が封止材料と直接接触するこ
とになる。PSG film (Phosphorus 5ilicated)
A passivation film such as Glass) is used,
Furthermore, various coating materials are used as necessary. However, the metal electrodes provided on the semiconductor chip must be connected to the external terminals of the container and thin metal wires, and are not protected by a passivation film, so the metal surface of the metal electrodes comes into direct contact with the sealing material. It turns out.
一般的に、Ｍ ＯＳ （Ｍｅｔａｌ ０ｘｉｄｅ Ｓｅ
ｍ１ｃｏｎｄｕｃｔｅｒ）型集積回路の金属電極として
は、アルミニウムが使用されており、封止材料としては
エポキシ系樹脂が用いられている。又、ＭＯ８型集積回
路はその拡散工程に於いて、汚れ、不純物イオン等によ
る電気的特性への影響を防ぐため、リンを含んだ雰囲気
中で安定化処理を行ったり、酸化膜の段差による配線金
属の断線を防ぐため、酸化膜にリンをドープし、熱処理
を行い、酸化膜の平滑化を行う。このため配線金属、金
属電極下に直接接触する酸化膜の表面はリンを含んだ酸
化膜となる。Generally, MOS (Metal Oxide Se
Aluminum is used as the metal electrode of the m1conductor type integrated circuit, and epoxy resin is used as the sealing material. In addition, during the diffusion process of MO8 type integrated circuits, in order to prevent dirt, impurity ions, etc. from affecting the electrical characteristics, stabilization treatment is performed in an atmosphere containing phosphorus, and wiring due to steps in the oxide film is stabilized. To prevent metal disconnection, the oxide film is doped with phosphorus and heat treated to smooth the oxide film. Therefore, the surface of the oxide film that is in direct contact with the wiring metal and under the metal electrode becomes an oxide film containing phosphorus.
一方封止材利としてのエポキシ系樹脂は吸水性のあるこ
とが判っておシ、この樹脂によシ刊止された集積回路は
、樹脂表面及び樹脂と外部端子との間より湿気が浸入し
、チップ表面に到達する。On the other hand, epoxy resin used as a sealing material is known to have water absorption properties, and integrated circuits encapsulated with this resin are susceptible to moisture infiltration from the resin surface and between the resin and external terminals. , reaching the chip surface.
チップ表面に到達した湿気は、チップ表面保護膜の欠陥
部を経て、配線金属パターンまで達する。Moisture that reaches the chip surface passes through defects in the chip surface protective film and reaches the wiring metal pattern.
配線金属がアルミニウムの時は化学反応によシアルミニ
ウムが非導電性化合物−水酸化アルミニウムを生体とし
たもの−に変化する。この現象は、アルミ溶け、アルシ
コロージョンと呼ばれている。When the wiring metal is aluminum, sialumium changes into a non-conductive compound - a living body of aluminum hydroxide - through a chemical reaction. This phenomenon is called aluminum corrosion.
特に酸化膜中にリンが含まれている場合には、湿気とリ
ンとの反応によりリン酸が生じ、配線金属であるアルミ
ニウムと化学反応を起こし、顕著なアルミ溶けとなる。In particular, if the oxide film contains phosphorus, the reaction between moisture and phosphorus produces phosphoric acid, which causes a chemical reaction with aluminum, which is the wiring metal, resulting in significant aluminum dissolution.
前述のごとく、金属！極を除くチップ表面はパッシベー
ション膜で覆われており、湿気に対する保護膜の役割を
果しているが、金属電極の部分は全く保護されていない
。As mentioned above, metal! The chip surface except for the electrodes is covered with a passivation film, which acts as a protective film against moisture, but the metal electrodes are not protected at all.
よって本発明は、金属電極部の湿気に対する電極材料の
コロ−ジョンを防止する目的として、金属筒、極下に接
する酸化膜にコロ−ジョンの原因となるリンを含まない
酸化膜構造を有することを特徴とする半導体装置である
。Therefore, in order to prevent corrosion of the electrode material due to moisture in the metal electrode portion, the present invention provides an oxide film structure that does not contain phosphorus, which causes corrosion, in the oxide film in contact with the metal tube and the very bottom. This is a semiconductor device characterized by:
以下図面を参照してこの発明の詳細な説明する。第１図
は従来の構造の断面図であシ、第２図は本発明の実施例
である。拡散工程を経たウェハース基板６上に形成され
たフィールド酸化膜５の表面は安定化処理等によりす／
を含んだ酸化膜２となっており、この上に金属電極３を
形成し、金属電極３を除いた部分を全てパッシベーショ
ン膜４で覆い、更に金属細線１により外部端子との接続
を行う。（第１図）
本発明は第２図に示すごとくフィールド酸化膜５が形成
されたウェハース基板６を安定化処理を実施する際に、
金属電極３が形成される部分を７オトレジストで覆った
状態で処理を実施、又は安定化処理実施後、フォトマス
クを用いて除去する １等の方法を用いて、金属電極３
が直接リンを含んだ酸化膜に接しない構造とし、この部
分に金属電極３を形成し、金属電極３を除いた部分を全
てパッシベーション膜４で覆い、更に金属細線ｌにより
外部端子との接続を行う。（第２図）以上に述べた本発
明を適用した試料により、プレッシャークツカーテスト
（水蒸気加圧試験）を実施し、アルミニウム金属電極の
コロ−ジョンを調査した結果、第３図に示す如〈従来構
造品に比べ、良好な結果が得られた。よって本発明を適
用することにより、アルミニウム金属電極に対する耐湿
性向上が可能となる。The present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view of a conventional structure, and FIG. 2 is an embodiment of the present invention. The surface of the field oxide film 5 formed on the wafer substrate 6 that has undergone the diffusion process is stabilized/
A metal electrode 3 is formed on this oxide film 2, and the entire portion except the metal electrode 3 is covered with a passivation film 4, and furthermore, a connection with an external terminal is made using a thin metal wire 1. (FIG. 1) In the present invention, as shown in FIG. 2, when stabilizing a wafer substrate 6 on which a field oxide film 5 is formed,
The metal electrode 3 is removed using a photomask after the treatment is performed while the part where the metal electrode 3 is to be formed is covered with the photoresist, or after the stabilization treatment is performed.
A metal electrode 3 is formed in this part, and the entire part except the metal electrode 3 is covered with a passivation film 4, and furthermore, connection with an external terminal is made using a thin metal wire l. conduct. (Fig. 2) A pressure test (steam pressurization test) was conducted using the sample to which the present invention described above was applied, and corrosion of the aluminum metal electrode was investigated. As a result, as shown in Fig. 3. Good results were obtained compared to conventionally structured products. Therefore, by applying the present invention, it is possible to improve the moisture resistance of aluminum metal electrodes.
第１図は従来の半導体装置の断面図、第２図は本発明実
施例の半導体装置の断面図、第３図はプレッシャークツ
カーテストによるアルミニウム金属電極のコロ−ジョン
確認試験結果である。
なお図において、ｌ・・・・・・金属細線、２・・・・
・・リンを含んだ酸化膜、３・−・・・・金属電極、４
・・・・・・パッシベーション膜、５・・・・・・フィ
ールド［（ｔＪＣ１６・・・・・・基板、である。
＃卯人葬、、キ 内直 、１、・′て日〉、（シ〈］
＄３０FIG. 1 is a sectional view of a conventional semiconductor device, FIG. 2 is a sectional view of a semiconductor device according to an embodiment of the present invention, and FIG. 3 is a result of a corrosion confirmation test of an aluminum metal electrode by a pressure shoe test. In the figure, l... thin metal wire, 2...
...Oxide film containing phosphorus, 3...Metal electrode, 4
...Passivation film, 5... Field [(tJC16...Substrate. 〈】 $30
Claims (1)
合するために設けられた半導体チップ上の金属電極に接
する酸化膜に、不純物であるリンを含まない酸化膜構造
を有することを特徴とする半導体装置。In a semiconductor integrated circuit, a semiconductor characterized in that an oxide film in contact with a metal electrode on a semiconductor chip provided for connection with an external terminal by a thin metal wire has an oxide film structure that does not contain phosphorus as an impurity. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119206A JPS6010652A (en) | 1983-06-29 | 1983-06-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119206A JPS6010652A (en) | 1983-06-29 | 1983-06-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6010652A true JPS6010652A (en) | 1985-01-19 |
Family
ID=14755555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58119206A Pending JPS6010652A (en) | 1983-06-29 | 1983-06-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010652A (en) |
-
1983
- 1983-06-29 JP JP58119206A patent/JPS6010652A/en active Pending
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