JPS60187046A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To enable to reduce the interval between the adjoining lead terminals of a ceramic package by a method wherein the lead terminals are formed using a metal which withstands the sintering to be performed on a ceramic substrate, and a part of said metal is implanted into the substrate. CONSTITUTION:A wiring 2a, with which the bottom face of a semiconductor chip A will be earthed and led out, and a plurality of wirings 2b which will be used to lead out the circuit of the chip A are provided on a ceramic insulated substrate 1a, and the wirings 2a and 2b are connected to the through hole 3 located on the substrate 1a. A lead terminal 5a consists of a high melting point metal and it is inserted into the through hole 3. Before the performance of sintering of the substrate 1a, the terminal 5a is inserted after a conductive substance has been filled in the through hole 3, and the terminal 5a is fixed by performing a sintering under the above-mentioned state. As the terminal 5a is formed using a metal of high melting point, no deterioration is generated therein. According to this constitution, the interval between the adjoining lead terminals of the ceramic package can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION fa) Technical Field of the Invention The present invention relates to a semiconductor device, and particularly to a lead-out structure for external lead terminals in a bin grid array type ceramic package on which a semiconductor chip is mounted, and a manufacturing method thereof.

(bl Technology background) Recently, many semiconductor devices are packaged in molds due to improvements in passivation technology for semiconductor chips, but devices that require high reliability or are used in special environments are still packaged in metal packages. Semiconductor devices that are hermetically sealed using ceramic packages, etc., occupy an important position.In particular, semiconductor devices with a high degree of integration and used in large-scale computers, etc. have a large number of lead-out terminals, and semiconductor chips In order to shorten the length of the conductor wires from the pin grid array type ceramic package used in the semiconductor device according to the present invention, the mainstream is a ceramic package in which the terminals are led out from the periphery of a rectangular shape.
A package in which lead terminals are arranged in a matrix and led out approximately perpendicularly from the bottom surface of a square package body,
As semiconductor chips become more highly integrated, it is desired that the package be made smaller or have an increased number of lead terminals.

(C) Prior art and problems Figure 1 is a side view (a) of an example of a semiconductor device using a conventional bin grid array type ceramic package, and a side sectional view (b) showing its structure. insulating base,
11 to 13 are insulating layers, 2a and 2b are wiring, 3 is a through hole, 4 is a terminal seat, 5 is a lead terminal, 6 is a fixing material, 7 is a lid, A is a semiconductor chip, B is a wire, pl is a terminal pinch are shown respectively.

The structure of the pancage in the semiconductor device shown in FIG. 3(a) is approximately as follows. That is, in Figure (b1 illustration),
The ceramic insulating substrate l has a wiring 2a that leads the bottom surface of the semiconductor chip A to ground and a plurality of wirings 2 that lead out the circuit of A.
b, and each wiring 2a, 2b is individually connected to a conductive terminal seat 4 disposed at a lead-out position of a lead terminal 5 around the bottom surface of the insulating base 1 via a through hole 3. It has become. The details of this part are shown in the figure (
c) As shown in the figure, a wire lead terminal 5 made of, for example, Kovar or 42 alloy (42% nickel-iron) is attached to the terminal seat 4 so as to be led out approximately perpendicularly to the bottom surface of the insulating base 1. , for example, is fixed with a conductive fixing material 6 such as silver solder, and the exposed conductor portion is plated with, for example, gold.

Here, the insulating base 1 initially has three insulating layers 11 to 13.
The wiring 2a and the terminal seat 4 are printed on 11, and the wiring 2b is printed on 12 with a conductive material such as tungsten paste, and a hole is made at the position of the through hole 3. It is made by filling a similar conductive material and then laminating and firing them into one piece.

The configuration of the semiconductor device is that semiconductor chip A is placed in this package.
are fixed by wire bonding, the ends of the wiring 2b and the terminals on the surface of the semiconductor chip A are connected by wire B by wire bonding, and the lid 7 is covered and sealed.

When this semiconductor device is mounted, the terminals 5 are inserted into holes in connection lands of a printed wiring board, for example, and fixed connections are usually made with solder. Therefore, in the package, it is necessary that the adhesion strength of the lead terminals 5 to the insulating substrate 1 be sufficiently large.

Since the lead terminal 5 is fixed to the terminal seat 4, it needs to be large enough to fit the terminal seat 4, and reducing the interval between adjacent lead terminals 5, that is, the terminal pinch, Limited by size.

Therefore, in a semiconductor device using a package with this configuration, the terminal pitch pl is usually 100 mils (2.5 mils).
4mm), but due to the above circumstances, this terminal pitch p1
It is difficult to make it extremely small, and it has the drawback that miniaturization or an increase in the number of lead terminals, which is desired as the degree of integration of semiconductor chips increases, is restricted.

ldl OBJECTS OF THE INVENTION In view of the above-mentioned conventional drawbacks, an object of the present invention is to provide a semiconductor device having a structure capable of reducing the distance between adjacent lead terminals of a bin grid array type ceramic package, and a method for manufacturing the same. be.

te+ Structure of the Invention The above object is such that the insulating base of a package on which a semiconductor chip is mounted is made of ceramic, and the lead terminal led out from the base is made of a metal that can withstand the firing of the ceramic base, and a part of the insulating base is made of ceramic. is implanted in the substrate, and prior to firing of the ceramic substrate of the package carrying the semiconductor depth,
It is characterized by having the step of connecting to the internal wiring of the base body, filling a hole bored in the base body with a conductive substance, inserting a part of the lead terminal, and then firing the base body together with the conductive substance. This is achieved by a method of manufacturing a semiconductor device.

Since the lead terminal is partially implanted in the base, it has sufficient adhesion strength relative to the base, and does not require the terminal seat in the conventional example, so It is possible to make the interval between the lead terminals extremely small.

(fl Embodiments of the Invention Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same reference numerals indicate the same objects throughout the drawings.

FIG. 2 is a side view (a) of an embodiment of a semiconductor device using a bin grid array type ceramic package according to the structure of the present invention, and side sectional views (b) and (C) showing the structure, where 1a is an insulating substrate. , 5a are lead terminals, and pl is the terminal pitch.

The structure of the package in the semiconductor device shown in FIG. is semiconductor chip A
A wiring 2a for grounding the bottom surface of the circuit A and a plurality of wirings 2b for leading out the circuit A are provided, and each of the wirings 2a and 2b is individually arranged at the lead-out position of the lead terminal 5a around the insulating base 1a. It is connected to through hole 3. The details of this part are as shown in FIG. The conductor is led out approximately perpendicularly to the bottom surface of the conductor, and the exposed conductor portion is plated with, for example, gold.

Here, the insulating substrate 1a is a green sheet that is initially divided into three insulating layers 11 to 13, substantially the same as the insulating substrate 1 shown in FIG. The wiring 2b is printed with an S conductive material, such as tungsten paste, and the holes made at the positions of the through holes 3 are filled with a similar conductive material, and then the layers are laminated and fired to form an integrated structure. The lead terminals 5a are first inserted into the through holes 3 and fired in this state, thereby fixing the lead terminals 5a at the same time. This firing is performed at a high temperature (approximately 1500°C), but the lead terminal 5
A is made of tungsten, so it will not deteriorate.

The structure of the semiconductor device is similar to that shown in FIG. 1, in which the semiconductor chip A is fixed to this puff cage by hard bonding, and the ends of the wiring 2b and the terminals on the surface of the semiconductor depth A are connected with wires B by wire bonding. They are connected, covered with a lid 7, and sealed.

In a semiconductor device using a bin grid array type puff cage having this configuration, the thickness of the lead terminal 5a is set to 0.
．． If you set it to 2fi, the terminal pitch p2 will be 25 mils (0,6
35 m), and when 160 lead terminals 5a are arranged in two rows around the insulating base 1a,
The size of the insulating substrate 1a may be approximately 15 square meters. Incidentally, as mentioned above, if the terminal pitch p1 is 100 mils (2.54 mm) in the configuration shown in FIG. Approximately 33 dragon angles are required, and if the terminal pitch p1 is set to 50 mils (1,2
7), it will be about 16 angles, and the size of the insulating base l will be almost similar to the above, but the number of lead terminals will be only half.

However, since the lead terminals 5a are fixed at the same time as the firing, there is an advantage that the manufacturing process is simpler than the conventional method.

(g) Effects of the Invention As explained above, the configuration according to the present invention provides a semiconductor device having a structure in which the interval between adjacent lead terminals of a pin grid array type ceramic package can be reduced, and its manufacture. We can provide a method,
This has the effect of making it possible to reduce the size or increase the number of lead terminals, which is desired as semiconductor chips become highly integrated, and to simplify the manufacturing process of the package.

[Brief explanation of the drawing]

Figure 1 is a side view (a) of an example of a semiconductor device using a conventional pin grid array type ceramic package, and a side sectional view (bl tc+) showing its structure; Figure 2 is a side view (a) of an example of a semiconductor device using a conventional pin grid array type ceramic package; A side view (a) of an embodiment of a semiconductor device using a ceramic package and a side sectional view (bl tc+) not showing its structure. In the drawings, 1 and la are insulating substrates, 11 to 13 are insulating layers, and 2a , 2b is wiring, 3 is a through hole, 4 is a terminal seat, 5.5a is a lead terminal, 6 is a fixing material, 7 is a lid, A is a semiconductor chip, B is a wire, pl and pl are terminal pitches, respectively. Leather/Figure 7 Grass Z figure

Claims (2)

[Claims] (1) The insulating base of the package on which the semiconductor chip is mounted is made of ceramic, and the lead terminals led out from the base are made of a metal that can withstand the firing of the ceramic base, and a part of the lead terminals are made of a metal that can withstand the firing of the ceramic base. A semiconductor device characterized by: (2) Prior to firing the ceramic base of the pancage on which the semiconductor chip is mounted, a conductive material is filled into the hole bored in the base by connecting it to the internal wiring of the base, and a part of the lead terminal is inserted, and then a part of the lead terminal is inserted. . A method for manufacturing a semiconductor device, comprising the step of firing the base together with the conductive material.