JPS60234351A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60234351A
JPS60234351A JP59089439A JP8943984A JPS60234351A JP S60234351 A JPS60234351 A JP S60234351A JP 59089439 A JP59089439 A JP 59089439A JP 8943984 A JP8943984 A JP 8943984A JP S60234351 A JPS60234351 A JP S60234351A
Authority
JP
Japan
Prior art keywords
semiconductor chip
package
radiating member
heat
wavy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59089439A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Sato
和善 佐藤
Hiroshi Hososaka
細坂 啓
Kanji Otsuka
寛治 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59089439A priority Critical patent/JPS60234351A/en
Publication of JPS60234351A publication Critical patent/JPS60234351A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/774Pistons, e.g. spring-loaded members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To expand the contact surface between a radiating member and a semiconductor chip or a package by holding the sides of radiating member with wavy spring. CONSTITUTION:A substrate 10 and a semiconductor chip 11 are bonded together through the intermediary of a solder bump electrode 12 while the upper end of a radiating member 13 made of a material with high thermal conductivity is provided with bumps 13a to expand the radiating surface. The inside diameter side of a doughnut type spring 14 wavy-formed in the radial direction is fixed on the sides of radiating member 13 while the outside diameter side is fixed on a cover 15. The force exerted on the semiconductor chip 11 may be controlled in the three directions of X, Y, Z by means of said doughnut type spring 14 wavy- formed in the radial direction. Through these procedures, the force exerted on the semiconductor chip 11 may be equalized even if the interface between said chip 11 and the radiating material 13 is flattened. Resultantly any thermal resistance at the contact surface between the semiconductor chip 11 and the radiating member 13 may be reduced since the contact surface may be expanded.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、半導体装置に係り、特に、低熱抵抗を必要と
する高密度実装のL S I (Large 5cal
e工ntegrat、ed C1rcuit)等の集積
回路装置に適用して有効な技術に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to semiconductor devices, and in particular to high-density packaging LSI (Large 5cal) devices that require low thermal resistance.
The present invention relates to a technology that is effective when applied to integrated circuit devices such as e-engineering (integrat, edcluit), etc.

〔背景技術〕[Background technology]

従来の低熱抵抗を必要とする高密度実装のLSIは、第
1図に示すように、例えば、基板1上に設けられた半導
体チップ2と、カバー5にスプリング4を介して保持さ
れているピストン等のヒートシンク(放熱用部材)3と
を常に接触させたピストン構造となっている(たとえば
、雑誌r E 1ecjronicsJ Junel 
6 、1 9 8 2 、PL43〜146) 。
A conventional high-density-packaged LSI that requires low thermal resistance, as shown in FIG. It has a piston structure that is always in contact with a heat sink (heat dissipation member) 3 such as
6, 1982, PL43-146).

しかしながら、本発明者の検討によれば前記従来の方式
では、次のような問題がある。前記半導体チップ2とピ
ー1ヘシンク3とを常に接触させる必要があり、かつ、
半導体チップ2に加わる重量を均一にするために、ヒー
トシンク3の先端を丸くする必要がある。そのため半導
体チップ2との接触面積が小さくなるので、熱抵抗が大
きくなす放熱効率が悪くなる。また、半導体チップ2に
加わる重量を精度良くスプリング4て制御しなけ扛ばな
らない。
However, according to the studies of the present inventors, the conventional system has the following problems. It is necessary that the semiconductor chip 2 and the P1 sink 3 are always in contact with each other, and
In order to make the weight applied to the semiconductor chip 2 uniform, the tip of the heat sink 3 needs to be rounded. Therefore, the contact area with the semiconductor chip 2 becomes smaller, and the heat dissipation efficiency, which is caused by increased thermal resistance, becomes worse. Further, the weight applied to the semiconductor chip 2 must be accurately controlled by the spring 4.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、半導体チップ又はパッケージ内で発生
した熱をヒートシンク等の放熱用部材で放熱するように
した半導体装置において、前記半導体チップ又はパッケ
ージと放熱用部材との接触面積を大きくするとともに、
半導体チップ又はパッケージに加わる重量を均一・にす
る技術手段を提供することにある。
An object of the present invention is to provide a semiconductor device in which heat generated within a semiconductor chip or package is dissipated by a heat dissipating member such as a heat sink, in which the contact area between the semiconductor chip or package and the heat dissipating member is increased, and
The object of the present invention is to provide a technical means for uniformizing the weight applied to a semiconductor chip or package.

本発明の他の目的は、前記放熱用部材の上部に自由に放
熱手段、例えば、水、空気等による強制冷却手段及び放
熱面積の拡大加工手段等を設けることが可能な技術手段
を提供することにある。
Another object of the present invention is to provide a technical means that can freely provide a heat radiating means, for example, a forced cooling means using water, air, etc., a means for enlarging the heat radiating area, etc. on the upper part of the heat radiating member. It is in.

本発明の前記ならびにその他の目的と新規な特徴は1本
明細書の記述及び添付図面によって明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち、代表的なものの概
要を説明す、lItば、下記のどおりである。
A summary of typical inventions disclosed in this application is as follows.

すなわち、半導体チップ又はパッケージ内で発生した熱
をヒートシンク等の放熱用部材で放熱するようにした半
導体装置において、前記放熱用部材の側部を波状スプリ
ングで保持することにより、半導体チップ又はパッケー
ジと放熱用部材との接触面積を大ぎくするとともに、半
導体チップ又はパッケージに加わる重量を均一にする。
That is, in a semiconductor device in which heat generated within a semiconductor chip or package is dissipated by a heat dissipating member such as a heat sink, by holding the sides of the heat dissipating member with a wavy spring, heat is dissipated from the semiconductor chip or package. To make the contact area with a member for use as large as possible and to make the weight applied to a semiconductor chip or package uniform.

また、水。Also, water.

空気等による強制冷却手段及び放熱面積の拡大加工手段
等を設けることを可能にしたものである。
This makes it possible to provide forced cooling means using air or the like, means for enlarging the heat dissipation area, etc.

以下、本発明の構成について、実施例とともに説明する
。なお、実施例の全図において、同一のものは同一の符
号をイ」け、その繰り返しの説明は省略する。
Hereinafter, the configuration of the present invention will be explained along with examples. In all the figures of the embodiment, the same parts are denoted by the same reference numerals, and repeated explanations thereof will be omitted.

〔実施例■〕[Example ■]

第2図乃至第4図(A)、(B)、(C)は、本発明を
低熱抵抗を必要とする高密度実装のフリップチップ方式
のL S Iに適用した実施例Iの構成を説明するため
の図であり、第2図は、その要部の平面図、第3図は、
第2図のX−X切断線における断面図、第4図(A)、
(B)、(c)は、第2図に示す放熱用部材の放熱断面
の平面図である。
Figures 2 to 4 (A), (B), and (C) illustrate the configuration of Example I in which the present invention is applied to a high-density mounting flip-chip type LSI that requires low thermal resistance. Figure 2 is a plan view of the main part, Figure 3 is a diagram for
A sectional view taken along the line XX in FIG. 2, FIG. 4(A),
(B) and (c) are plan views of heat dissipation cross sections of the heat dissipation member shown in FIG. 2;

第2図及び第3図において、10は基(反、11は半導
体チップ、12は半田バンプ電極、13は高熱伝導率の
材料からなる放熱用部材(ピー1〜シンク)である。こ
の放熱用部材13の上端面は、その放熱効率を」二げる
ために、第4図(A)、(B)。
In FIG. 2 and FIG. 3, 10 is a base, 11 is a semiconductor chip, 12 is a solder bump electrode, and 13 is a heat dissipation member (P1 to sink) made of a material with high thermal conductivity. The upper end surface of the member 13 is arranged as shown in FIGS. 4(A) and 4(B) in order to increase its heat dissipation efficiency.

(C)に示すよに、凹凸13Aを伺けて放熱面積を拡大
している。14はその半径方向が波状に形成されたドー
ナツ形スプリングであり、その内径部は前記放熱用部材
13の側部に固定され、その外径部はカバー15に固定
されている。
As shown in (C), the heat dissipation area is expanded due to the unevenness 13A. Reference numeral 14 designates a donut-shaped spring having a wavy shape in the radial direction, and its inner diameter part is fixed to the side part of the heat dissipation member 13, and its outer diameter part is fixed to the cover 15.

このような構造にすることにより、半導体チップ11に
加わる力は、前記その半径方向が(12払に形成された
ドーナツ形スプリング14の作用て、x、y、zの3方
向における制御が可能である、これにより、半導体チッ
プ11ど放熱用部材13との境界面を平担にしても、半
導体チップ11に加わる力を均一にすることが容易にで
きる。したがって、前記半導体チップ11と放熱用部材
13との接触面を大きくすることができるので、その接
触面での熱抵抗を低減できる3、 〔実施例■〕 第5図は、本発明を低熱抵抗を必要とする高密度実装の
多ビン方式のLS丁に適用した実施例Hの構成を説明す
るための要部断面図である。
With this structure, the force applied to the semiconductor chip 11 can be controlled in the three directions x, y, and z due to the action of the donut-shaped spring 14 formed in the radial direction. As a result, even if the interface between the semiconductor chip 11 and the heat dissipation member 13 is made flat, the force applied to the semiconductor chip 11 can be easily made uniform. Since the contact surface with 13 can be increased, the thermal resistance at the contact surface can be reduced. FIG. 4 is a sectional view of a main part for explaining the configuration of Example H applied to the LS unit of the system.

第5図において、16はパッケージ、17はリー1−(
ピン)である。
In FIG. 5, 16 is a package, 17 is a 1-(
pin).

本実施例nは、@5図に示すように、前記実施例fと同
様にその半径方向に波状のドーナツ形スプリング14を
用いたものであるが、発熱源が半導体チップ11てなく
、パッケ−ジ】6の場合である。
As shown in Figure @5, this embodiment n uses a donut-shaped spring 14 which is wavy in the radial direction like the embodiment f, but the heat generation source is not the semiconductor chip 11 and the package This is the case of 6.

このように、直接半導体チップを冷却しなくてパッケー
ジ16を冷却した場合ついても、実施例Iの場合と同様
の効果が得られる。
In this way, even when the package 16 is cooled without directly cooling the semiconductor chip, the same effects as in Example I can be obtained.

〔実施例■〕[Example ■]

本実施例■は、第6図に示すように、前記実施例■の放
熱用部材13の上端部を強制冷却するための冷却手段1
8を設けたものである。該冷却手段18は、前記放熱用
部材13.その半径方向が波状に形成されているドーナ
ツ形スプリング14゜カバー15及び管状部材18Aに
よって冷却用管を形成し、その冷却用管の中に水又は空
気を強制的に矢印方向に流すようになっている。このよ
うに構成することにより、半導体チップ11で発生され
た熱の放熱効率を一層向上させることができる。
In the present embodiment (2), as shown in FIG.
8. The cooling means 18 includes the heat radiation member 13. A cooling pipe is formed by the donut-shaped spring 14° cover 15 whose radial direction is wave-shaped and the tubular member 18A, and water or air is forced to flow into the cooling pipe in the direction of the arrow. ing. With this configuration, the efficiency of dissipating heat generated by the semiconductor chip 11 can be further improved.

〔実施例■〕[Example ■]

本実施例■は、前記実施例■と同様に放熱用部材13の
上端部に冷却手段18を設けたものであるが、該冷却手
段を、第7図に示すように、別の冷却用管19を設け、
該冷却用管19の側面に穴をあけ、その穴の中に放熱用
部材13の上端部を挿入し、その両者間をパツキン19
Aによって気密に封止している。そして、前記冷却用管
19の中に水又は空気を強制的に矢印方向に流すように
なっている。このように構成することにより、半導体チ
ップ11で発生された熱の放熱効率を一層向上させとか
できる。
In the present embodiment (2), a cooling means 18 is provided at the upper end of the heat dissipation member 13 as in the above-mentioned embodiment (2), but the cooling means is provided with a separate cooling pipe as shown in FIG. 19,
A hole is made in the side surface of the cooling tube 19, the upper end of the heat radiation member 13 is inserted into the hole, and a gasket 19 is inserted between the two.
It is hermetically sealed by A. Water or air is forced to flow into the cooling pipe 19 in the direction of the arrow. With this configuration, the efficiency of dissipating heat generated by the semiconductor chip 11 can be further improved.

〔効果〕〔effect〕

以上説明したように、本願で開示した新規な技術手段に
よれば、次のような効果を得ることができる。
As explained above, according to the novel technical means disclosed in this application, the following effects can be obtained.

(1)前記放熱用部材の側部を波状スプリングで保持し
たことにより、半導体チップ又はパッケージに加わる力
をX、Y、Zの方向における制御が可能である。これに
より、半導体チップ又はパッケージと放熱用部材との接
触面を平担にすることができ、その接触面積を大きくす
ることができる。
(1) By holding the side portions of the heat dissipation member with wave-shaped springs, it is possible to control the force applied to the semiconductor chip or package in the X, Y, and Z directions. Thereby, the contact surface between the semiconductor chip or package and the heat dissipation member can be made flat, and the contact area can be increased.

(2)前記(1)により、半導体チップ又はパッケージ
に加わる重量を均一にすることができる。
(2) According to (1) above, the weight applied to the semiconductor chip or package can be made uniform.

(3)前記放熱用部材の側部を波状スプリングで保持し
たことにより、放熱用部材の上端部に水、空気等による
強制冷却手段及び放熱面積の拡大加工手段等を設けるこ
とを可能にすることができる。
(3) By holding the side portions of the heat dissipation member with wave-shaped springs, it is possible to provide forced cooling means using water, air, etc., means for expanding the heat dissipation area, etc. at the upper end of the heat dissipation member. I can do it.

(4)前記(1)乃至(3)により、半導体チップ又は
パッケージで発生する熱を効率よく放熱することができ
るので、半導体装置の寿命及び信頼性を向上させること
ができる。
(4) According to (1) to (3) above, the heat generated in the semiconductor chip or package can be efficiently dissipated, so that the life and reliability of the semiconductor device can be improved.

以上、本発明を実施例に基づいて具体的に説明したが、
本発明は、前記実施例に限定されることなく、その要旨
を逸脱しない範囲において種々変更可能であることは言
うまでもない。例えば、前記半径方向が波状に形成され
ているドーナツ形スプリングは、放熱用部材の側面に対
して垂直方向に波状になっているものであればどのよな
形状でもよい。
The present invention has been specifically described above based on examples, but
It goes without saying that the present invention is not limited to the embodiments described above, and can be modified in various ways without departing from the spirit thereof. For example, the donut-shaped spring having a wavy shape in the radial direction may have any shape as long as it is wavy in a direction perpendicular to the side surface of the heat dissipation member.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、低熱抵抗を必要とする高密度実装LSIの問
題点を説明するための図。 第2図乃至第4図(A、)、(B)、(C)は、本発明
を高密度実装のフリップチップ方式のLSIに適用した
実施例■の構成を説明するための図であり、第2図は、
その要部の平面図、 第3図は、第2図のX−X切断線における断面図。 第4図(A)、(B)、(C)は、第2図に示す放熱用
部材の放熱断面の平面図 第5図は、本発明を低熱抵抗を必要とする高密度実装の
多ピン方式のLSIに適用した実施例■の構成を説明す
るための要部断面図、 第6図は、本発明の実施例■を説明するための要部断面
図、 第7図、本発明の実施例■を説明するための要部断面図
である。 図中、10・・・基板、11・・・半導体チップ、12
・・・半田バンプ電極、13・・・放熱用部材、14・
・半径方向が波状に形成されたドーナツ形スプリング、
15・・カバー、16・・パッケージ、17・・・リー
ド、18・冷却手段、18A・・・管状部材、19・・
冷却用管。 第 1 図 第 2 図 ノ4 第 4 図
FIG. 1 is a diagram for explaining the problems of high-density packaging LSIs that require low thermal resistance. FIGS. 2 to 4 (A, ), (B), and (C) are diagrams for explaining the configuration of Example (2) in which the present invention is applied to a flip-chip type LSI with high-density packaging. Figure 2 shows
FIG. 3 is a sectional view taken along line XX in FIG. 2; 4(A), (B), and (C) are plan views of the heat dissipation cross section of the heat dissipation member shown in FIG. 2. FIG. FIG. 6 is a sectional view of essential parts for explaining the configuration of embodiment (2) applied to an LSI according to the present invention. FIG. 6 is a sectional view of essential parts for explaining embodiment (2) of the present invention. FIG. 3 is a sectional view of a main part for explaining example (2). In the figure, 10...substrate, 11... semiconductor chip, 12
... solder bump electrode, 13 ... heat dissipation member, 14.
・Doughnut-shaped spring with wavy radial direction,
15...Cover, 16...Package, 17...Lead, 18.Cooling means, 18A...Tubular member, 19...
Cooling tube. Figure 1 Figure 2 Figure No. 4 Figure 4

Claims (1)

【特許請求の範囲】 18半導体チップ又はパッケージ内で発生した熱を放熱
用部材で放熱するようにした半導体装置において、前記
放熱用部材の側部を波状スプリングで保持したことを特
徴とする半導体装置。 2、前記波状スプリングを、その半径方向が波状に形成
されたドーナツ形スプリングにしたことを特徴とする特
許請求の範囲第1項記載の半導体装置。 3、前記放熱用部材の半導体チップ又はパッケージと接
触する端部と反対側の端部に、凹凸を設けて表面積を拡
大したことを特徴とする特許請求の範囲第1項及び第2
項記載の半導体装置。 4、前記放熱用部材の半導体チップ又はパッケージと接
触する端部と反対側の端部に、強制冷却手段を設けたこ
とを特徴とする特許請求の範囲第1項乃至第3項記載の
半導体装置
[Claims] 18. A semiconductor device in which heat generated within a semiconductor chip or package is radiated by a heat radiating member, characterized in that a side portion of the heat radiating member is held by a wavy spring. . 2. The semiconductor device according to claim 1, wherein the wavy spring is a donut-shaped spring whose radial direction is wave-shaped. 3. Claims 1 and 2, characterized in that the end of the heat dissipating member opposite to the end that contacts the semiconductor chip or package is provided with unevenness to enlarge the surface area.
1. Semiconductor device described in Section 1. 4. The semiconductor device according to any one of claims 1 to 3, characterized in that a forced cooling means is provided at an end of the heat dissipating member opposite to the end that contacts the semiconductor chip or package.
JP59089439A 1984-05-07 1984-05-07 Semiconductor device Pending JPS60234351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59089439A JPS60234351A (en) 1984-05-07 1984-05-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59089439A JPS60234351A (en) 1984-05-07 1984-05-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS60234351A true JPS60234351A (en) 1985-11-21

Family

ID=13970708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089439A Pending JPS60234351A (en) 1984-05-07 1984-05-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS60234351A (en)

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WO2026009667A1 (en) * 2024-07-02 2026-01-08 株式会社日立製作所 Electric power converting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3138563A1 (en) * 2022-07-27 2024-02-02 Safran Electronics & Defense THERMAL DRAIN FOR AN ELECTRONIC CARD
WO2026009667A1 (en) * 2024-07-02 2026-01-08 株式会社日立製作所 Electric power converting device

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