JPS6029187B2 - electronic microscope - Google Patents

electronic microscope

Info

Publication number
JPS6029187B2
JPS6029187B2 JP55130832A JP13083280A JPS6029187B2 JP S6029187 B2 JPS6029187 B2 JP S6029187B2 JP 55130832 A JP55130832 A JP 55130832A JP 13083280 A JP13083280 A JP 13083280A JP S6029187 B2 JPS6029187 B2 JP S6029187B2
Authority
JP
Japan
Prior art keywords
lens
magnification
objective lens
electron
excitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55130832A
Other languages
Japanese (ja)
Other versions
JPS5757460A (en
Inventor
彬 米沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOKUSAI SEIKO KK
Original Assignee
KOKUSAI SEIKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOKUSAI SEIKO KK filed Critical KOKUSAI SEIKO KK
Priority to JP55130832A priority Critical patent/JPS6029187B2/en
Publication of JPS5757460A publication Critical patent/JPS5757460A/en
Publication of JPS6029187B2 publication Critical patent/JPS6029187B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/21Means for adjusting the focus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Description

【発明の詳細な説明】 本発明は電子顕微鏡、特に高倍率から比較的低い倍率に
至るまで対物レンズのフオーカス励磁をほぼ一定に保つ
ことを可能にした電子顕微鏡に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron microscope, and particularly to an electron microscope that makes it possible to keep the focus excitation of an objective lens substantially constant from high magnification to relatively low magnification.

電子顕微鏡の対物レンズのフオーカス励磁は倍率を可変
してもほぼ一定に保つことが操作上等の上から望ましい
From operational standpoints, it is desirable to keep the focus excitation of the objective lens of an electron microscope almost constant even when the magnification is varied.

従来の電子顕微鏡においては、通常制限視野倍率によっ
てのみこの条件が満足されており、この制限視野倍率を
用いることのできる倍率範囲は通常数千倍から数十万倍
であるが、かかる従来の制限視野倍率を用いた一例が第
1図に示してある。第1図は、対物レンズ3と制限視野
絞り4と中間レンズ5,6と投影レンズ8とを備えた電
子顕微鏡において、比較的高倍率の像を得るために作ら
れた電子経路を示す図である。
In conventional electron microscopes, this condition is usually satisfied only by selected area magnification, and the range of magnification that can be used with this selected area magnification is usually from several thousand times to hundreds of thousands of times. An example using field magnification is shown in FIG. FIG. 1 is a diagram showing an electron path created to obtain a relatively high magnification image in an electron microscope equipped with an objective lens 3, a selected area diaphragm 4, intermediate lenses 5 and 6, and a projection lens 8. be.

これにおいて、試料1から散乱された電子線2は、対物
レンズ3で屈折されて制限視野絞り4面に像9として一
日結像される。数千倍乃至数十万倍という中高倍率範囲
では、中間レンズ5の物面が制限視野絞り4の面と一致
するように中間レンズ5,6および投影レンズ8の励磁
を変化させて像10の倍率を可変するため、この倍率可
変を行っても対物レンズのフオーカス励磁をほぼ一定に
保つことができる。ところが、上記と同様、制限視野絞
り4位置に結像させて、数千倍よりも低い倍率の像10
を得ることは可能であるが、このような像を得るには中
間レンズ6等を使って数段階にわたり像を縮小しなけれ
ばならないため、大きな軸外収差を発生し易い。そこで
従来の電子顕微鏡においては、数千倍以下の低倍率の像
を得るには、第2図に示すように対物レンズ3の励磁を
変え、中間レンズ5及び投影レンズ8の励磁によって投
影面上に低倍率像10を結像させていた。これによれば
、試料1により散乱された電子線2は、対物レンズ3と
中間レンズ5とによって厩折され、中間レンズ5の後方
で投影レンズ8の物面に結像された後、投影レンズ8を
通って後面13に隊10を作っている。
In this case, the electron beam 2 scattered from the sample 1 is refracted by the objective lens 3 and is imaged as an image 9 on the selected area diaphragm 4 surface. In the medium and high magnification range from several thousand times to hundreds of thousands of times, the excitation of the intermediate lenses 5 and 6 and the projection lens 8 is changed so that the object plane of the intermediate lens 5 coincides with the surface of the selected area diaphragm 4, and the image 10 is Since the magnification is varied, the focus excitation of the objective lens can be kept almost constant even when the magnification is varied. However, similar to the above, when the image is formed at the selected area diaphragm 4 positions, the image 10 has a magnification lower than several thousand times.
However, in order to obtain such an image, it is necessary to reduce the image in several stages using the intermediate lens 6 or the like, which tends to cause large off-axis aberrations. Therefore, in conventional electron microscopes, in order to obtain images with a low magnification of several thousand times or less, the excitation of the objective lens 3 is changed as shown in FIG. A low magnification image 10 was formed. According to this, the electron beam 2 scattered by the sample 1 is refracted by the objective lens 3 and the intermediate lens 5, and after being imaged on the object surface of the projection lens 8 behind the intermediate lens 5, the electron beam 2 is 8 and forming squad 10 on the rear flank 13.

しかしながら、この方法では対物レンズ3の結像面が制
限視野絞り4面になく、この面から比較的大きな距離離
れた位贋にあるため、対物レンズ3のフオーカス励磁は
、制限視野倍率を用いる場合のフオーカス励磁に対して
数パーセント異なった値に設定される。このため、電子
顕微鏡の倍率切換操作を行い前者の制限視野倍率から後
者の低倍率へと移行した際、フオーカス励磁の再調整を
行う必要がある上、非点補正を再調整する必要が生じ、
操作が煩雑であるという問題があった。さらに対物レン
ズ3にC.0.レンズ(コンデンサ・オブジェクテイブ
レンズ)のような強励磁レンズを用いたような場合には
、対物レンズ3のフオーカス励磁を変化させると好まし
くない照射条件の変化をひきおこすという問題があった
。本発明は上記した従来技術の問題点に鑑みなされたも
ので、その目的は、対物レンズと制限視野絞りとの間に
おいて、上記対物レンズの直後に別の電子レンズを配置
し、数千倍以下の低倍率像を得たい時は、この電子レン
ズの励磁を変化させ、当該電子レンズの励磁変化前より
も対物レンズ寄りの位置に試料の結像面を設定すること
により、対物レンズの励磁をほぼ一定に保つたままでも
より一層低倍率の像が得られるようにした電子顕微鏡を
提供することである。即ち、本発明においては、上記の
如く対物レンズの直後に電子レンズを追加設置しておい
て、高倍率観察時には対物レンズを所定の強さに励磁す
る一方、上記電子レンズをゼロ又は極めて低い励磁強さ
に設定する。
However, in this method, the imaging plane of the objective lens 3 is not on the selected area aperture 4 surface, but is located at a relatively large distance from this plane, so the focus excitation of the objective lens 3 is difficult when using the selected area magnification. is set to a value that differs by a few percent for the focus excitation of . Therefore, when switching the magnification of the electron microscope and moving from the former limited field magnification to the latter low magnification, it is necessary to readjust the focus excitation and also readjust the astigmatism correction.
There was a problem that the operation was complicated. Furthermore, the objective lens 3 has a C. 0. When a strongly excitation lens such as a condenser objective lens is used, there is a problem in that changing the focus excitation of the objective lens 3 causes an undesirable change in the irradiation conditions. The present invention was made in view of the problems of the prior art described above, and its purpose is to place another electron lens immediately after the objective lens between the objective lens and the selected area diaphragm, and to When you want to obtain a low-magnification image, you can change the excitation of this electron lens and set the imaging plane of the sample at a position closer to the objective lens than before the excitation change of the electron lens. An object of the present invention is to provide an electron microscope capable of obtaining an image at a lower magnification even when the magnification is kept almost constant. That is, in the present invention, an electron lens is additionally installed immediately after the objective lens as described above, and while the objective lens is excited to a predetermined strength during high magnification observation, the electron lens is not excited at zero or extremely low. Set to strength.

これにより、対物レンズの後方の所定の位置にて試料の
対物レンズ結像が行われ、更に中間レンズ、投影レンズ
による結像が行われて試料の高倍率観察像が得られる。
次に、低倍率観察を行う時は、対物レンズの励磁強さを
上記強さそ同じに保つたまま電子レンズの励磁を増大変
化させる。すると、上記対物レンズ結像位置よりも対物
レンズ寄りの位置において試料の対物レンズ結像が行わ
れ、次いで中間レンズ、投影レンズによる結像が行われ
て試料の低倍率観察像が得られるのである。このため、
数千倍よりも低位の倍率から数十方情の高倍率に至るま
での広い倍率範囲にわたって対物レンズのフオーカス励
磁をほとんど変化させなくて済み、低倍率操作への切換
えに際しての非点収差の発生と照射条件の悪化とを防止
することができる。以下、本発明の実施例を添付の図面
に基き詳細に説明する。
As a result, the sample is imaged by the objective lens at a predetermined position behind the objective lens, and further imaged by the intermediate lens and the projection lens to obtain a high-magnification observation image of the sample.
Next, when performing low magnification observation, the excitation of the electron lens is increased while keeping the excitation strength of the objective lens the same as above. Then, the sample is imaged by the objective lens at a position closer to the objective lens than the above-mentioned objective lens image formation position, and then imaged by the intermediate lens and projection lens to obtain a low-magnification observation image of the sample. . For this reason,
Over a wide magnification range from low magnifications of several thousand times to high magnifications of several tens of times, there is almost no need to change the focus excitation of the objective lens, and the occurrence of astigmatism when switching to low magnification operation is avoided. and deterioration of irradiation conditions can be prevented. Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

第3図及び第4図は本発明の一実施例を示す図である。FIG. 3 and FIG. 4 are diagrams showing an embodiment of the present invention.

このうち、第3図は、制限視野倍率を使った試料の嫁観
察状態を示し、電子顕微鏡における高倍率観察法の一例
である。この実施例に係る電子顕微鏡は、試料1面の後
方に配置された対物レンズ3と、対物レンズ3の後方に
配置された制限視野絞り4、中間レンズ5,6及び投影
レンズ8を有する点については上記従来からの電子顕微
鏡と同様である。しかし従来例と異なり、対物レンズ3
と制限視野絞り4との間には、対物レンズ3や中間レン
ズ5,6等とは別に電子レンズ12が配置され、試料1
の対物レンズ3結像電子線を屈折させることができるよ
うになっている。この電子レンズ12は、対物レンズ3
の後方に配置され対物レンズ3や中間レンズ5,6等と
は独立して電気的にオン・オフ操作できるように構成さ
れ、オン操作時は、対物レンズ3を通過した電子線を更
に屈折させることができる。そして高倍率観察をするた
め制限視野倍率を使う場合には電子レンズ12はオフ操
作され、低倍率観察をする場合には電子レンズ12はオ
ン操作される。したがってこの発明による電子顕微鏡で
は、数千倍から数十方情の倍率範囲で電子顕微鏡を使用
する時は電子レンズ12は励磁されず、試料1から出た
電子線2は、第1図に示したのと同機に、対物レンズ3
で屈折されて制限視野絞り4の面上の点14に結像し、
その後中間レンズ5,6によって像7を作り、投影レン
ズ8を通った後像記録面13に像10を作る。
Of these, FIG. 3 shows a sample observation state using selected field magnification, and is an example of a high magnification observation method in an electron microscope. The electron microscope according to this embodiment has an objective lens 3 disposed behind the surface of the sample 1, a selected area diaphragm 4 disposed behind the objective lens 3, intermediate lenses 5 and 6, and a projection lens 8. is similar to the conventional electron microscope described above. However, unlike the conventional example, the objective lens 3
An electron lens 12 is arranged between the diaphragm 4 and the selected area diaphragm 4, in addition to the objective lens 3, intermediate lenses 5, 6, etc.
The objective lens 3 is capable of refracting the imaged electron beam. This electron lens 12 includes an objective lens 3
It is arranged behind the objective lens 3, intermediate lenses 5, 6, etc., and is configured to be electrically turned on and off independently of the objective lens 3, intermediate lenses 5, 6, etc., and when turned on, further refracts the electron beam that has passed through the objective lens 3. be able to. When using selected field magnification for high magnification observation, the electronic lens 12 is turned off, and when low magnification observation is performed, the electronic lens 12 is turned on. Therefore, in the electron microscope according to the present invention, when the electron microscope is used in a magnification range from several thousand times to several tens of times, the electron lens 12 is not excited, and the electron beam 2 emitted from the sample 1 is transmitted as shown in FIG. On the same machine as Tano, objective lens 3
is refracted at and focused on a point 14 on the surface of the selected area diaphragm 4,
Thereafter, an image 7 is formed by intermediate lenses 5 and 6, and an image 10 is formed on an image recording surface 13 after passing through a projection lens 8.

また倍率変化は、中間レンズ5,6や投影レンズ8の励
磁を可変して行われる。他方、試料1を低倍率で観察す
るときは、対物レンズ3や中間レンズ5,6等と共に電
子レンズ12もまたオン操作されて励磁される。このた
め、試料1から出た電子線2は、対物レンズ3と電子レ
ンズ12とによって屈折され、当該電子レンズ12と制
限視野絞りとの間の点15に結像し像16を作る。この
場合、対物レンズ3の励磁は上記制限視野倍率における
励磁と同じであり、電子線2は対物レンズ3を通過した
後、第4図中点線17で示すように点14の方向に進む
。そして電子レンズ12を適当な大きさに励磁すること
により、像16を電子レンズ12と制限視野絞り4との
間の所定の位置に作る。一方、中間レンズ5,6および
投影レンズ8については、低倍率領域内で倍率可変して
も、中間レンズ5の物面が常に像16の結像点15に来
るよう上記中間レンズ5,6および投影レンズ8の励磁
が設定される。かかる励磁設定を行うことにより中間レ
ンズ5の物面が制限視野絞り面上の点14位置から点1
5位置へと対物レンズ3側へ移動するため、中間レンズ
5,6及び投影レンズ8による綾拡大率が制限視野倍率
の場合よりも低下し、低倍率像10が得られる。上述の
説明においては、電子レンズ12を、第3図に示した制
限視野倍率においてはオフ、第4図に示した低倍率にお
いてはオンしたが、前者においてもオンしてもよい。す
なわち、制限視野倍率において、電子レンズ12の励磁
を比較的弱励磁にして対物レンズ3と電子レンズ12に
より、制限視野絞り4面上に第1の像を結ばせ、低倍率
においては、電子レンズ12の励磁を増して、藤面を制
限視野絞り4の前方の点15に移動させてもよい。こう
して、数百倍から数千倍に至る倍率が得られるが、この
倍率範囲内における倍率変更の間、対物レンズ3のフオ
ーカス励磁は、中間レンズ5,6のヒステリシスの影響
を受けて若干変化することが考えられるが、制限視野倍
率におけるフオーカス励磁とはほとんど変らない。
Further, the magnification is changed by varying the excitation of the intermediate lenses 5 and 6 and the projection lens 8. On the other hand, when observing the sample 1 at low magnification, the electron lens 12 is also turned on and excited together with the objective lens 3, intermediate lenses 5, 6, etc. Therefore, the electron beam 2 emitted from the sample 1 is refracted by the objective lens 3 and the electron lens 12, and is focused on a point 15 between the electron lens 12 and the selected area aperture to form an image 16. In this case, the excitation of the objective lens 3 is the same as the excitation at the selected field magnification, and after passing through the objective lens 3, the electron beam 2 advances in the direction of a point 14 as shown by a dotted line 17 in FIG. Then, by exciting the electron lens 12 to an appropriate size, an image 16 is created at a predetermined position between the electron lens 12 and the selected area diaphragm 4. On the other hand, the intermediate lenses 5, 6 and the projection lens 8 are arranged so that the object surface of the intermediate lens 5 is always at the focal point 15 of the image 16 even if the magnification is varied within the low magnification region. The excitation of the projection lens 8 is set. By performing such excitation settings, the object surface of the intermediate lens 5 changes from the point 14 position on the selected area aperture plane to the point 1.
5 toward the objective lens 3 side, the traverse magnification by the intermediate lenses 5 and 6 and the projection lens 8 is lower than in the case of limited field magnification, and a low magnification image 10 is obtained. In the above description, the electronic lens 12 was turned off at the selected field magnification shown in FIG. 3 and turned on at the low magnification shown in FIG. 4, but it may be turned on in the former case as well. That is, at selected area magnification, the excitation of the electron lens 12 is relatively weakly excited so that the objective lens 3 and the electron lens 12 form a first image on the selected area aperture 4, and at low magnification, the electron lens 12 may be increased to move the wisteria surface to a point 15 in front of the selected area diaphragm 4. In this way, magnification ranging from several hundred times to several thousand times is obtained, but during the magnification change within this magnification range, the focus excitation of the objective lens 3 changes slightly due to the influence of the hysteresis of the intermediate lenses 5 and 6. However, it is almost the same as focus excitation at selected field magnification.

第2図に示した従来の低倍率結像法では、対物レンズ励
磁は倍率に応じて変化していたのに対して、本発明の電
子顕微鏡では、高倍率領域だけでなく低倍率領域でも対
物レンズ励磁を不変にすることができる。以上説明した
ように、本発明によれば、数百倍から数十方倍までにわ
たる広い倍率範囲にわたって対物レンズのフオーカス励
磁をほとんど変化させる必要がなく、また、このフオー
カス励磁の変化に伴なう非点の変化も殆ど生じないから
再調整する必要がなくなる。そして倍率を変えた場合の
フオーカスの調整幅を最小にすることができ、操作上非
常に簡便な電子顕微鏡にすることができる。さらにまた
、C.0.レンズのような、強励磁電子レンズを対物レ
ンズとして使用する電子顕微鏡に本発明を適用すれば、
対物レンズを励磁変化させることによる、試料より集東
レンズ側の対物レンズ磁場可変に伴って生じる試料照射
条件の変化がなくなり、良好な像観察が可能となる等の
効果が得られる。
In the conventional low-magnification imaging method shown in Fig. 2, the excitation of the objective lens changes depending on the magnification, whereas in the electron microscope of the present invention, the objective lens excitation is changed not only in the high-magnification region but also in the low-magnification region. Lens excitation can be made constant. As explained above, according to the present invention, there is almost no need to change the focus excitation of the objective lens over a wide magnification range from several hundred times to several tens of times, and Since there is almost no change in astigmatism, there is no need for readjustment. The range of focus adjustment when changing the magnification can be minimized, making it possible to provide an electron microscope that is extremely simple to operate. Furthermore, C. 0. If the present invention is applied to an electron microscope that uses a strongly excited electron lens like a lens as an objective lens,
By changing the excitation of the objective lens, there is no change in the sample irradiation conditions that occurs due to the variation of the objective lens magnetic field on the focusing lens side from the sample, and effects such as good image observation can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の電子顕微鏡を制限視野倍率にて作動さ
せている状態を示す図である。 第2図は、従来の電子顕微鏡に低倍率結像させるために
作動させている状態を示す図である。第3図は、本発明
による電子顕微鏡を制限視野倍率にて作動させている状
態を示す図である。第4図は、本発明による電子顕微鏡
を使って低倍率結像させている状態を示す図である。1
・・…・試料、2・…・・電子線、3・・・・・・対物
レンズ、4・・・…制限視野絞り、5,6…・・・中間
レンズ、8・・・・・・投影レンズ、12・・・・・・
電子レンズ。 第1図第2図 第3図 第4図
FIG. 1 is a diagram showing a state in which a conventional electron microscope is operated at selected field magnification. FIG. 2 is a diagram showing a state in which a conventional electron microscope is operated to form a low-magnification image. FIG. 3 is a diagram showing the electron microscope according to the present invention being operated at selected field magnification. FIG. 4 is a diagram showing a state in which low magnification images are formed using the electron microscope according to the present invention. 1
...Sample, 2...Electron beam, 3...Objective lens, 4...Selected area aperture, 5, 6...Intermediate lens, 8... Projection lens, 12...
electronic lens. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 1 対物レンズと、対物レンズの後方に配置された制限
視野絞り及び中間レンズと、中間レンズ後方に配置され
た投影レンズとを有する電子顕微鏡において、対物レン
ズと制限視野絞りとの間に励磁可変の電子レンズを配置
し、高倍率による観察時は、対物レンズと上記電子レン
ズによる試料の結像面を、対物レンズ後方の所定の位置
に設定する一方、低倍率による観察時は、この電子レン
ズを、高倍率観察時における強度とは異なつた強度に励
磁変化させ、対物レンズと上記電子レンズとによる試料
の結像面を上記電子レンズの励磁変化前よりも対物レン
ズ寄りで、上記電子レンズと制限視野絞りとの間の位置
に設定すると共に、更に中間レンズ及び投影レンズによ
り像記録面に結像することにより、高倍率から低倍率に
至る倍率範囲において対物レンズのフオーカス励磁をほ
ぼ一定に保ち得るようにしたことを特徴とする電子顕微
鏡。
1. In an electron microscope that has an objective lens, a selected area diaphragm and an intermediate lens placed behind the objective lens, and a projection lens placed behind the intermediate lens, an excitation variable An electron lens is placed, and when observing at high magnification, the imaging plane of the sample by the objective lens and the electron lens is set at a predetermined position behind the objective lens, while when observing at low magnification, this electron lens is , the excitation is changed to a different intensity from the intensity during high-magnification observation, and the imaging plane of the sample by the objective lens and the above-mentioned electron lens is closer to the objective lens than before the excitation change of the above-mentioned electron lens and is limited to the above-mentioned electron lens. By setting it at a position between the field stop and further forming an image on the image recording surface using an intermediate lens and a projection lens, the focus excitation of the objective lens can be kept almost constant in the magnification range from high magnification to low magnification. An electron microscope characterized by:
JP55130832A 1980-09-22 1980-09-22 electronic microscope Expired JPS6029187B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130832A JPS6029187B2 (en) 1980-09-22 1980-09-22 electronic microscope

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Application Number Priority Date Filing Date Title
JP55130832A JPS6029187B2 (en) 1980-09-22 1980-09-22 electronic microscope

Publications (2)

Publication Number Publication Date
JPS5757460A JPS5757460A (en) 1982-04-06
JPS6029187B2 true JPS6029187B2 (en) 1985-07-09

Family

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JP55130832A Expired JPS6029187B2 (en) 1980-09-22 1980-09-22 electronic microscope

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Country Link
JP (1) JPS6029187B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119146A (en) * 1982-01-11 1983-07-15 Jeol Ltd Electron microscope
JPS60182043A (en) * 1984-02-29 1985-09-17 Hitachi Ltd Cassette loader
WO2018189850A1 (en) * 2017-04-13 2018-10-18 株式会社 日立ハイテクノロジーズ Electron microscope

Also Published As

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JPS5757460A (en) 1982-04-06

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