JPS6128443A - Photochemical gaseous phase growing apparatus - Google Patents
Photochemical gaseous phase growing apparatusInfo
- Publication number
- JPS6128443A JPS6128443A JP59148113A JP14811384A JPS6128443A JP S6128443 A JPS6128443 A JP S6128443A JP 59148113 A JP59148113 A JP 59148113A JP 14811384 A JP14811384 A JP 14811384A JP S6128443 A JPS6128443 A JP S6128443A
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- reaction
- substrate
- laminar flow
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007792 gaseous phase Substances 0.000 title 1
- 239000011261 inert gas Substances 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000012495 reaction gas Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 238000007740 vapor deposition Methods 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 abstract description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は、３００ｎｍ以下の紫外光を照射することによ
って、反応ガスを励起せしめ、化学反応を促進させ膜を
成長させる光化学気相成長装置に関す−るものである。Detailed Description of the Invention (Technical Field) The present invention relates to a photochemical vapor deposition apparatus that excites a reactive gas by irradiating it with ultraviolet light of 300 nm or less to promote a chemical reaction and grow a film. It is something.
（従来技術）
集積回路装置を含む半導体装置の製造プロセスの低温化
のために、プラズマ気相成長法と共に光化学気相成長法
が、必須の半導体装置製造技術としである。この光化学
気相成長法として、低圧水銀灯から発光される２５３．
７ｎｍの紫外光を、水銀蒸気を含む反応ガスに照射し先
つ水銀原子を励起し次に励起水銀原子によって反応ガス
分子を励起し膜形成を行なう方法（Ｊ 、Ｗ 、 Ｐｅ
ｔｅｒｓ ： Ｐｒｏｃ。(Prior Art) In order to lower the temperature of the manufacturing process of semiconductor devices including integrated circuit devices, photochemical vapor deposition along with plasma vapor deposition are essential semiconductor device manufacturing techniques. As this photochemical vapor deposition method, 253.
A method in which a reaction gas containing mercury vapor is irradiated with 7 nm ultraviolet light to first excite the mercury atoms, and then the excited mercury atoms excite the reaction gas molecules to form a film (J, W, Pe
ters: Proc.
Ｉｎｔ 、Ｃｏｎｆ 、 ＩＥＥＥ ＩＥＤＭ（１９８
１）２４０ ）、あるいは、同じく低圧水銀灯から発光
される１８４９ｎｍの光によって直接的に反応ガス分子
を励起し膜形成を行なう方法（Ｙ、Ｎｕｍａｓａｗａ、
ｅｔ、ａｌ、 ： Ｊ、Ｊ。Int, Conf, IEEE IEDM (198
1) 240), or a method in which film formation is performed by directly exciting reactive gas molecules with 1849 nm light emitted from a low-pressure mercury lamp (Y, Numasawa,
et, al.: J.J.
Ａ、ＰＪ、ｅｔｔ、２２（１９８３）７９２）が通常と
られている。この様な光化学気相成長を行なう装置にお
いて、光源部と反応が生じる反応部の間は光源から発光
される光を透過する光透過窓によってし切られておシ、
この光透過窓を透過した光によって反応部で化学反応が
進行する。従来の光化学気相成長装置において、反応ガ
スは光透過窓に直接に接しているために、光透過窓上に
おいても化学反応をおこし該光透過窓上にも膜成長が生
じる。通常、半導体装置製造に使用される膜は、３ＱＱ
ｎｍ以下の紫外光に透明でないものが多いため、従来の
光化学気相成長装置を用いた場合、光透過窓上に成長し
た膜が厚くなるに従い光透過窓を通し反応部へ照射され
る紫外光量が減少し、遂には全く遮断され膜成長しなく
なるという問題があった。A, PJ, ett, 22 (1983) 792) is usually taken. In an apparatus for performing such photochemical vapor deposition, the space between the light source section and the reaction section where the reaction occurs is separated by a light transmission window that transmits the light emitted from the light source.
A chemical reaction progresses in the reaction section due to the light transmitted through the light transmission window. In a conventional photochemical vapor deposition apparatus, since the reaction gas is in direct contact with the light transmission window, a chemical reaction occurs on the light transmission window as well, and film growth occurs on the light transmission window as well. Usually, the films used in semiconductor device manufacturing are 3QQ
Since many substances are not transparent to ultraviolet light of nm or less, when using conventional photochemical vapor deposition equipment, as the film grown on the light transmission window becomes thicker, the amount of ultraviolet light irradiated to the reaction area through the light transmission window decreases. There was a problem in that the film growth rate decreased and eventually it was completely blocked and no film growth occurred.
（発明の目的）
本発明の目的は、上記の問題点を解消した光化学気相成
長装置を提供することである８（発明の構成）
本発明の光化学気相成長装置は、光源部と反応部と、□
その両者の中間に位置する、多数の開口部を有する光透
過窓から成シ、該光透過窓に平行な基板直上かつ平行に
反応ガス層流を形成し、該反応ガス層流上かつ平行に不
活性ガス層流を形成し、さらに該不活性ガス層流上かつ
垂直に不活性ガス流を形成することを特徴とする。(Object of the Invention) An object of the present invention is to provide a photochemical vapor deposition apparatus that solves the above-mentioned problems. And □
A laminar flow of reactive gas is formed directly above and parallel to the substrate parallel to the light transmitting window, and a laminar flow of reactive gas is formed above and parallel to the laminar flow of reactive gas. It is characterized by forming an inert gas laminar flow and further forming an inert gas flow above and perpendicular to the inert gas laminar flow.
（発明の作用、効果）
本発明の光化学気相成長装置を用い、多数の開口部を有
する光透過窓を通し、光源部から反応部へ不活性ガス流
を形成することによシ、かつ、基板に平行に流れる反応
ガス流直上平行に不活性ガス層流を形成することによシ
、光透過窓への膜被着を抑止できる。それ故、長時間に
わたって連続膜成長が可能となる。さらに、反応ガス層
流上かつ平行に形成される不活性ガス層流によって、反
応ガス層流の厚さを制御でき、基板上に大きな成長速度
で均一な膜形成が可能となる。(Operations and Effects of the Invention) By using the photochemical vapor deposition apparatus of the present invention and forming an inert gas flow from the light source section to the reaction section through a light transmission window having a large number of openings, and By forming an inert gas laminar flow directly above and parallel to the reactive gas flow flowing parallel to the substrate, film deposition on the light transmission window can be suppressed. Therefore, continuous film growth is possible over a long period of time. Furthermore, the thickness of the laminar flow of the reactant gas can be controlled by the laminar flow of the inert gas formed above and parallel to the laminar flow of the reactant gas, making it possible to form a uniform film on the substrate at a high growth rate.
（実施例）
次に、本発明を実施例に基づき、図面を用いて詳説する
。第１図は、本発明の光化学気相成長装置を説明するた
めの断面図である。本発明の光化学気相成長装置１０１
は光源室１０２と反応室１０３とから成シ、これらは、
合成石英板から成る光透過窓１０４によってし切られて
おシ、かっ該光透過窓１０４には第２図に示す様に、９
．５ｍｍφ、３０００個の開口部１０５が形成されてい
る。(Example) Next, the present invention will be explained in detail based on an example using drawings. FIG. 1 is a cross-sectional view for explaining the photochemical vapor deposition apparatus of the present invention. Photochemical vapor deposition apparatus 101 of the present invention
consists of a light source chamber 102 and a reaction chamber 103, which are
As shown in FIG.
．． 3000 openings 105 each having a diameter of 5 mm are formed.
低圧水銀灯１０６、光反射板１０７は光源室１０２内に
設置され、膜が成長させられる基板１０８ａ、温度制御
できる基板台座１０９上に置かれて、反応室１０３内に
設置されている。反応ガスは反応ガス導入部１１０より
導入され基板１０８直上に反応ガス層流１１４を形成し
排気部１１３から排気され、反応ガス層流１１４上に不
活性ガス層流を形成するための不活性ガスは、不活性ガ
ス導入部１１１１よシ導入され、反応ガス層流′１１４
上平行に不活性ガス層流１１５を形成し排気部１１３か
ら排気され、不活性ガス層流１１５上かつ垂直に不活性
ガス流を形成するための不活性ガスは、不活性ガス導入
部Ｉ［１１２よシ導入され、光透過窓１０４の開口部１
０５を通して、光源室１０２から反応室１０３への不活
性ガス流１１６を形成し排気部１１３よシ排気される。A low-pressure mercury lamp 106 and a light reflection plate 107 are installed in the light source chamber 102, and are placed in the reaction chamber 103 on a substrate 108a on which a film is grown and a substrate pedestal 109 whose temperature can be controlled. The reaction gas is introduced from the reaction gas introduction part 110 to form a reaction gas laminar flow 114 directly above the substrate 108 , and is exhausted from the exhaust part 113 to form an inert gas laminar flow on the reaction gas laminar flow 114 . is introduced through the inert gas introduction part 1111, and the reaction gas laminar flow '114
The inert gas for forming an inert gas laminar flow 115 parallel to the top and being exhausted from the exhaust part 113 and forming the inert gas flow perpendicularly above the inert gas laminar flow 115 is supplied to the inert gas introduction part I [ 112 and the opening 1 of the light transmission window 104
05, an inert gas flow 116 is formed from the light source chamber 102 to the reaction chamber 103 and is exhausted through the exhaust section 113.
この様に、反応ガスおよび不活性ガスの流れを制御する
ことＫよシ、光透過窓への膜被着を抑止でき、長時間に
わたって連続膜成長が可能となる。In this way, by controlling the flow of the reactive gas and the inert gas, it is possible to prevent the film from adhering to the light-transmitting window, and it is possible to continuously grow the film over a long period of time.
第３図は、本発明の光化学気相成長装置の効果を説明す
るためのグラフであシ、モノシランとアンモニアの混合
比ｌ：５の反応ガスｌ Ｑ Ｑ ｓｃｃｍを用い、波長
１８４．９ｎｍ光の光強度を１５ｍＷ／Ｃｍ” 、基板
温度２５０℃で、シリコン窒化膜を成長した場合の、膜
厚と成長時間の関係を示すものである。Ａのグラフは、
不活性ガスを全く流゛さなかりた場合、すなわち、従来
の光化学気相成長装置を用いた場合のグラフであシ、成
長時間とともに膜成長速度が小さくな、Ｄ、３０分以上
では全く膜成長しなくなる。一方、Ｂのグラフは、不活
性ガスとしてアルゴンガスｔ［い％ １０１００５ｃ
（Ｄ核反応ガス層流上平行に４ Ｑ Ｑ ｓｅｃｍ
の不活性ガス層流を形成し、かつ該不活性ガス層流上
垂直に１０００ ｓｅｃｍの不活性ガス流を形成した場
合のグラフであシ、不活性ガスを用いなかった場合Ａに
較べ、膜成長速度が増加し、かつ長時間はぼ一定の速度
で膜成長していることが判る。FIG. 3 is a graph for explaining the effect of the photochemical vapor deposition apparatus of the present invention. Graph A shows the relationship between film thickness and growth time when a silicon nitride film is grown at a light intensity of 15 mW/Cm" and a substrate temperature of 250°C.
This graph shows the case where no inert gas was flowed at all, that is, when a conventional photochemical vapor deposition apparatus was used. D: The film growth rate decreases as the growth time increases.D: No film grows at all after 30 minutes. I won't. On the other hand, graph B shows argon gas t[% 101005c] as an inert gas.
(4 Q Q sec above the laminar flow of D nuclear reaction gas
This is a graph when an inert gas laminar flow of 1000 sec is formed perpendicularly above the inert gas laminar flow. It can be seen that the growth rate increases and the film grows at a nearly constant rate for a long time.
以上、本発明によって、光化学気相成長装置の光透過窓
への膜被着のために基板に膜成長しなくなるという問題
が解決され、半導体装置製造に供しうる光化学気相成長
装置を提供することが可能となる。As described above, the present invention solves the problem that a film does not grow on a substrate due to film adhesion to a light transmission window of a photochemical vapor deposition apparatus, and provides a photochemical vapor deposition apparatus that can be used for manufacturing semiconductor devices. becomes possible.
第１図は本発明による光化学気相成長装置を説明するだ
めの断面図、第２図は、第１図中の光透適過窓の平面図
であシ、第３図は本発明の効果を示すためのグラフであ
る。
なお、図において、１０１・・・・・・光化学気相成長
装置、１０２・・・・・・光源室、１０３・・・・・・
反応室、１０４・・・・・・光透過窓、１０５・・・・
・・開口部、１０６・・・・・・低圧水銀灯、１０７・
・・・・・光反射板、ｉｏｓ・・・・・・基板、１０９
・・・・・・基板台座、１１０・・・・・・反応ガス導
入部、１１１・・・・・・不活性ガス導入部Ｉ、１１２
・・・・・・不活性ガス導入部■、１１３・・・・・・
排気部、１１４・・・・・・反応ガス層流、１１５・・
・・・・不活性ガス層流、１１６・・・・・・不活性ガ
ス流、である。
・５、：：二ン、
ｗ ’””” ”：
代理人 弁理士 内 原 日
“、−
第１ 回
峯２″ｌ￥］FIG. 1 is a cross-sectional view for explaining the photochemical vapor deposition apparatus according to the present invention, FIG. 2 is a plan view of the light transmission window in FIG. 1, and FIG. 3 is a diagram showing the effects of the present invention. This is a graph to show. In the figure, 101... photochemical vapor deposition apparatus, 102... light source chamber, 103...
Reaction chamber, 104...Light transmission window, 105...
...Opening, 106...Low pressure mercury lamp, 107.
・・・・Light reflecting plate, ios・・・・Substrate, 109
......Substrate pedestal, 110...Reactive gas introduction part, 111...Inert gas introduction part I, 112
...Inert gas introduction part ■, 113...
Exhaust section, 114... Reaction gas laminar flow, 115...
... Inert gas laminar flow, 116 ... Inert gas flow.・5,::Two, w '””” ”: Agent Patent Attorney Uchihara Hi”, - 1st Mine2″l￥]
Claims (2)
該光源部から照射される光によって反応ガスを励起し基
板に膜を形成せしめる反応部と、光源部と反応部の間に
位置し、３００ｎｍ以下の波長の少くも一部の波長の光
を透過させる、基板に平行な光透過窓から成る光化学気
相成長装置に於いて、基板直上かつ平行に反応ガス層流
を形成し、該反応ガス層流上かつ平行に不活性ガス層流
を形成し、さらに該不活性ガス層流上かつ垂直に不活性
ガス流を形成することを特徴とする光化学気相成長装置
。(1) A light source unit that irradiates light with a wavelength of 300 nm or less,
A reaction part that excites the reaction gas by the light emitted from the light source to form a film on the substrate, and a reaction part that is located between the light source part and the reaction part and that transmits at least part of the wavelength of 300 nm or less. In a photochemical vapor deposition apparatus consisting of a light transmission window parallel to the substrate, a laminar flow of reactive gas is formed directly above and parallel to the substrate, and a laminar flow of inert gas is formed above and parallel to the laminar flow of reactive gas. , further comprising forming an inert gas flow perpendicularly above the inert gas laminar flow.
過窓に多数の開口部を形成し、不活性ガスを光源部から
反応部へ流す構造とすることを特徴とする特許請求の範
囲第（１）項に記載の光化学気相成長装置。(2) A patent claim characterized in that the above-mentioned formation of the inert gas flow perpendicular to the substrate is achieved by forming a large number of openings in the light-transmitting window and allowing the inert gas to flow from the light source section to the reaction section. The photochemical vapor deposition apparatus according to item (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59148113A JPS6128443A (en) | 1984-07-17 | 1984-07-17 | Photochemical gaseous phase growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59148113A JPS6128443A (en) | 1984-07-17 | 1984-07-17 | Photochemical gaseous phase growing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6128443A true JPS6128443A (en) | 1986-02-08 |
Family
ID=15445539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59148113A Pending JPS6128443A (en) | 1984-07-17 | 1984-07-17 | Photochemical gaseous phase growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6128443A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229081A (en) * | 1988-02-12 | 1993-07-20 | Regal Joint Co., Ltd. | Apparatus for semiconductor process including photo-excitation process |
| US6261372B1 (en) * | 1999-04-15 | 2001-07-17 | Tokyo Electron Limited | Vacuum process system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4726052Y1 (en) * | 1968-09-28 | 1972-08-11 | ||
| JPS5662214A (en) * | 1979-10-27 | 1981-05-28 | Nippon Telegr & Teleph Corp <Ntt> | Connector for connecting submarine optical cable |
| JPS571605A (en) * | 1980-05-31 | 1982-01-06 | Miyano Tekkosho:Kk | Appliance for holding workpiece or product with different diameters in axial direction |
-
1984
- 1984-07-17 JP JP59148113A patent/JPS6128443A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4726052Y1 (en) * | 1968-09-28 | 1972-08-11 | ||
| JPS5662214A (en) * | 1979-10-27 | 1981-05-28 | Nippon Telegr & Teleph Corp <Ntt> | Connector for connecting submarine optical cable |
| JPS571605A (en) * | 1980-05-31 | 1982-01-06 | Miyano Tekkosho:Kk | Appliance for holding workpiece or product with different diameters in axial direction |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229081A (en) * | 1988-02-12 | 1993-07-20 | Regal Joint Co., Ltd. | Apparatus for semiconductor process including photo-excitation process |
| US6261372B1 (en) * | 1999-04-15 | 2001-07-17 | Tokyo Electron Limited | Vacuum process system |
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