JPS62108202A - color filter - Google Patents

Abstract

PURPOSE:To obtain the titled filter having a deposited red coloring layer which has excellent properties of thermal resistance solvent resistance, adhesion against a substrate, and spectral characteristics by forming the layer contg. a red coloring matter deposited a specific perinone type coloring matter on a substrate. CONSTITUTION:The positive type resist is coated on the substrate 1 and then a prescribed resist pattern 2 is formed by irradiating light or an electron beam to it to form a mask. The coloring matter layer 3 is formed by depositing the coloring matter contg. perinone or its derivative shown by formula I or II using said mask. The layer 4 contg. the red coloring matter of the stripe pattern type is formed by removing the resist pattern 2 and the layer 3 thereon, by dipping said substrate in a solvent which does not dissolve the coloring matter to obtain the titled filter. The titled filter may be provided with a protective layer.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a color filter, and particularly to a color filter suitable for image color separation in color imaging elements, color sensors, color displays, etc. be.

[Conventional technology]

Conventionally, as a color filter, ceratin,
A dyed color filter is known in which a mordant layer made of a hydrophilic polymeric substance such as casein, gryu, or polyvinyl alcohol is provided, and the mordant layer is dyed with a dye to form a colored layer.

With this type of dyeing method, many dyes can be used, and it is relatively easy to meet the spectral characteristics required for the filter. Wet method 1, which is difficult to control due to immersion
However, it has the drawback that the yield is low because it has a complicated process of providing an intermediate layer for resist dyeing for each color. Also, the heat resistance of dyeable pigments is 1
The temperature is relatively low, about 50° C. or less, and it is difficult to use the filter if it requires thermal treatment.

On the other hand, a vapor deposition method is known in which a thin film of dye or pigment is formed as a colored layer by a vapor deposition method such as vapor deposition (Japanese Patent Laid-Open Publication No. 146406/1983).

According to this method, the colored layer can be formed from the dye itself, so the colored layer is formed thinner than in a dyeing method that uses a mordant layer.Color Filter-7i! It can be made into m-type, and since it is a non-aqueous process, it is easy to manage and control the process. Further, vapor-deposited dye layers generally have good heat resistance due to the patents for dyes having vapor-deposit properties, and can be used in processes that require thermal treatment. Furthermore, it also has the advantage that a photolithography process can be directly applied as one of the methods for patterning the colored layer.

On the other hand, when looking at color filters from the perspective of the dyes that form them, color filter dyes are required to have the following properties. First of all, it must have predetermined spectral characteristics as a color separation filter.

In addition, from the perspective of the manufacturing method of color filters, even if the dye has excellent spectral characteristics, if it lacks manufacturing stability or requires a special processing process, the yield will decrease, and in the end, the color filter Therefore, as a dye for color filters, it is necessary to select an optimal dye that is well-balanced from both the viewpoints of spectroscopic patents and manufacturing.

[Problem that the invention seeks to solve]

When forming color filters by vapor deposition, the dye used must be heat resistant and easily evaporated, as well as be resistant to solvent treatment in the photolithography process. Color filters formed by the vapor deposition method have not become widespread, despite the various advantages mentioned above compared to the dyeing method, because of strong restrictions and the dyes that can be used are limited.

That is, there is a limit to the dyes that can be vapor deposited, and even if a color filter is formed using a dye that can be vapor deposited, it is often not possible to obtain predetermined color separation characteristics in the color filter. In addition, even if the dyes that can be vapor-deposited have good color separation properties, the solvent treatment and heating steps used in resist coating and development when patterning the vapor-deposited layer of the dye,
In addition, during each process such as the solvent treatment and heating process for coating and curing the polymer resin when forming the protective layer of the vapor-deposited dye layer, and the various solvent treatment and heating processes necessary for making color filter devices. , cracking or peeling of the pigment film, or 3.
In many cases, a vapor deposition pattern layer having the desired quality could not be obtained due to the occurrence of a solution phenomenon.

For example, when trying to form a red colored layer by vapor deposition, many perylene dyes have conventionally been used; Because it is extremely stable both physically and thermally, it has excellent vapor deposition and solvent resistance, but its spectral properties have unnecessary transmission characteristics for light in the 400 to 450 nm range, and it also does not interact well with the substrate. Due to its density, it often lacks stability during the manufacturing process, and it has not always been a satisfactory dye for forming a deposited layer.

The present invention was made in view of these problems, and particularly when forming a red colored layer of a color filter by a vapor deposition method, it is an object of the present invention to find a suitable pigment that is well-balanced in terms of both spectral characteristics and manufacturing. It was completed by this.

An object of the present invention is to provide a color filter having a colored layer formed by a vapor deposition method from a dye that has excellent heat resistance, solvent resistance, and adhesion to a substrate, and also has excellent spectral characteristics. Particularly, the object of the present invention is to provide a color filter that can obtain excellent optical characteristics for a red colored layer, which conventionally has been difficult to obtain predetermined spectral characteristics and furthermore lacks stability with respect to the substrate.

[Means for solving problems]

The color filter of the present invention is characterized by having a red dye layer formed by vapor-depositing a perinone dye.

That is, the color filter of the present invention has vapor deposition properties, heat resistance,
It has a colored layer formed by vapor deposition from a dye that has excellent solvent resistance and adhesion to the substrate, and also has excellent spectral characteristics.
In particular, since the red dye layer is formed from a vapor-deposited layer of perinone-based dye, it has excellent vapor deposition properties, heat resistance, solvent resistance, and adhesion to the substrate, and is a red color with excellent spectral characteristics as a red color. It has layers.

Examples of the dye that can form the red colored layer of the color filter of the present invention include the following structural formula (1
) or (II) or its derivatives can be mentioned.

In the above formula, R represents H1OC2Hh or C1.

The dye used in the vapor deposition method must inherently have excellent heat resistance. In general, organic dyes vary depending on their chemical structure, but many are thermally unstable and easily decompose.

On the other hand, the perinone dye that can form the red dye layer of the color filter of the present invention is extremely thermally stable due to its conjugated planar structure.
It has the property of being easily vapor-deposited at a predetermined temperature or higher without being decomposed by heating, and is extremely suitable for forming a dye layer by vapor deposition. It remains stable even after undergoing processes such as buttering and heat treatment, and its spectral characteristics do not change or deteriorate.

Further, the above-mentioned perinone dye exhibits excellent spectral characteristics as a red color, as shown in Examples described in detail later.

Furthermore, the vapor deposition layer of the above-mentioned perinone dye formed by vapor deposition has a carbonyl group (OC.0) and a tertiary amine (N-) in its chemical structure. As a result, hydrogen bonds are formed between molecules or with the substrate, and as a result, it is extremely dense, and its adhesion to the substrate is also improved compared to conventional ones, and it has an excellent ing.

The layer thickness of the red dye layer of the color filter of the present invention is determined depending on the desired spectral characteristics, and is usually 500 mm.
It is desirable that the number be ~10,000 people.

Next, the patterning of the vapor-deposited dye layer when forming the color filter of the present invention will be explained.

Typical buttering techniques for vapor-deposited dye layers include:
There are try-etching method and lift-off method.

In the dry etching method, a resist pattern with a shape corresponding to the pattern to be formed is provided on a vapor-deposited dye layer provided on a substrate such as glass, and the vapor-deposited dye layer is etched using plasma or ion etching using the resist pattern as a mask. A dye pattern is formed by removing parts of the substrate other than those covered by the mask. (Unexamined Japanese Patent Publication No. 58
-34961 etc.). This method does not require the formation of an intermediate layer as in the dyeing method, but instead a resist mask remains on the dye pattern. Moreover, since it is extremely difficult to remove this mask without causing any damage to the dye layer, the result is either a resist mask that is essentially optically unnecessary, or a two-layer structure laminated on top of the dye layer. .

On the other hand, in the lift-off method, for example, a resist pattern having a shape corresponding to the pattern to be formed is first formed on a substrate using a substance that can be dissolved in a developer, such as a resist, and then this resist pattern is A dye layer is deposited onto the provided substrate. In this way, a resist pattern is formed on the substrate below the dye layer to be removed. The substrate is then treated with a developer solution, during which the resist pattern is dissolved or released and removed from the substrate. At this time, the resist pattern and the dye layer on the resist pattern are also removed from the substrate, and the portion of the dye layer directly laminated on the substrate is left on the substrate, and the vapor-deposited dye layer is patterned. Therefore, according to the lift-off method, unnecessary portions of the vapor-deposited dye layer can be physically removed from the substrate without any direct effect on the vapor-deposited dye layer on the substrate.

The resist used for patterning the dye layer by the lift-off method may be either negative or positive type as long as it can be peeled off or dissolved from the substrate during subsequent removal treatment from the substrate using a developer. However, in the case of a negative type, crosslinking generally progresses when exposed to radiation, and a solvent with strong dissolving power is required to dissolve it.

Therefore, it is not preferable because it tends to damage or dissolve the dye layer.

In this regard, with positive type resists, especially if the entire surface is irradiated with radiation after the resist pattern is formed, the resist becomes soluble in the developer, so compared to negative type resists, it is possible to select a solvent that is less likely to dissolve the dye, making it suitable for lift-off. It is. Further, positive resists also have a wide variety of resin components, and various solvents are used for coating and developing them. It is desirable to select a positive resist that can use a solvent that is less reactive to the dye; examples include FPM 210°F8MIIO and F8M +20 (both trade names manufactured by Daikin Industries).

The C1 vapor-deposited dye layer is patterned using the patterning technique described above, and the formation of the vapor-deposited dye layer and its patterning are repeated for each color of the color filter, thereby forming a pattern of dyes in a predetermined plurality of colors. After forming the layers, it is desirable to provide a protective film on these dye layers. This is to prevent defects in the dye layer such as adhesion of dust and scratches, and to protect the dye layer from various environmental conditions. Various known methods can be used to form this protective film.

Materials that can form a protective film for the dye layer include:
For example, organic resins such as polyurethane, polycarbonate, silicone, acrylic polyvaraxylylene, Si, N4
．． Examples include inorganic films such as Sin, Sin, A12J, Ta703, etc., and a protective layer is formed on the vapor-deposited dye layer using a coating method such as suton coating, dipping, roll coater, or vapor deposition method using a material appropriately selected from these. can be formed. For forming this protective layer, it is also possible to use various photosensitive resins, such as various resists.

The patterning of the vapor-deposited dye layer as explained above can be carried out on a suitable substrate, and the substrate to be used is one that allows vapor deposition of the dye and the formed color filter has a predetermined function. It is not particularly limited.

For example, specifically, the following can be used as a substrate. A glass plate, an optical resin plate, a resin film or plate such as ceratin, polyvinyl alcohol, hydro-diethyl cellulose, methyl methacrylate, polyester, butyral, polyamide, or a patterned dye layer is integrated with those applied as a color filter. It is also possible to form Examples of substrates in this case include cathode ray tube display surfaces, image pickup tube light receiving surfaces, CGD,
880. Examples include wafers on which solid-state imaging devices such as CID and BASIS are formed, liquid crystal display surfaces of two image sensors using thin film semiconductors, photoreceptors for color electrophotography, and the like.

If it is necessary to further increase the adhesion between the vapor-deposited dye layer and the underlying substrate, such as glass, apply a thin layer of polyurethane resin, polycarbonate resin, silane coupling agent, etc. to the glass substrate, etc. before applying the vapor-deposited dye. Forming a layer is even more effective.

Hereinafter, a typical method for forming a color filter of the present invention will be described with reference to the drawings, taking as an example the case of forming a red stripe filter.

First, a positive resist is spin-coated onto a desired substrate using a spinner. After drying, the resist layer is prebaked under appropriate temperature conditions. Next, the resist layer is exposed to light or an electron beam having resist sensitivity through a mask having a predetermined pattern shape corresponding to the pattern to be formed (stripe pattern), and this is further developed to form a resist pattern. form. If necessary, pre-treatment for the purpose of alleviating distortion of the resist film before development,
A rinsing treatment may be performed to prevent development and to suppress swelling of the film. If the remaining resist film and residue, so-called scum, cannot be removed even after development, they can be removed by plasma ashing.

Through the above steps, the resist pattern 2 shown in FIG. 1 is formed on the substrate 1. Next, as shown in FIG. 2, the entire surface of the resist pattern 2 is irradiated with light or an electron beam having resist sensitivity. This is to facilitate the subsequent dissolution and removal of the resist pattern by cutting and decomposing the main chain of the resist, but it can be omitted. If it is omitted, it is necessary to use a solvent with stronger solubility.

Next, as shown in FIG. 3, on the surface of the substrate 1 on which the resist pattern is provided, perinone or a derivative thereof as mentioned above is deposited by vacuum evaporation to form a dye layer 3.

The thickness of the dye layer 3 is determined depending on the desired spectral characteristics, but is usually about 500 to 10,000.

Next, the substrate on which the dye layer 3 is provided is removed without dissolving the dye in order to remove the resist pattern 2 under the dye layer.
Further, the resist pattern is immersed in a solvent that dissolves or peels only the resist pattern from the substrate without damaging the spectral characteristics.

Removal of the resist pattern simultaneously removes the overlying dye layer, and to assist in this removal, it is also effective to apply ultrasonic energy during dipping. In this way, the red dye layer 4 in a striped pattern as shown in FIG. 4 can be formed, and the color filter of the present invention can be obtained.

In addition, when forming the color filter of the present invention consisting of two or more colors, the steps from FIG. 1 to FIG. It is possible to form a color filter consisting of three colored layers 4.5 and 6 of different colors as shown in FIG. 5, for example, by repeating the process using the corresponding dyes.

Further, the color filter of the present invention may have a protective layer 7 formed from the above-mentioned materials on the top of the filter, as shown in FIG.

(Example) Examples of the present invention are shown below.

Example 1 A positive resist 0DOR+013 (manufactured by Tokyo Ohka Chemical Co., Ltd.) was applied to a film thickness of 1.0 .mu.m on a glass substrate by a stochastic coating method. Next, the resist layer was exposed to deep ultraviolet light through a pattern mask corresponding to the shape of the pattern to be formed. After exposure, the resist layer on the substrate was treated with a resist developer and a lysis solution to form a resist pattern on the substrate. Next, the entire surface of this resist pattern was irradiated with far-ultraviolet light so that it would be easily dissolved in the developer when the resist pattern was subjected to a lift-off treatment using a developer later.

Next, a glass substrate on which a resist pattern was formed and a permanent dye TG-02 (trade name, manufactured by Hoechst Co., Ltd., C, 1, No. 7, which is a perinone-based dye according to the present invention)
A molybdenum evaporation boat filled with 1100) was placed at a predetermined position in a vacuum chamber for vacuum evaporation, and the inside of the vacuum chamber was evacuated. A permanent red vapor deposition layer was formed on the substrate on which the resist pattern had been formed to a thickness of about 3000 by heating to 400 to 450° C. under a vacuum degree of 105 to IQ 6 torr.

Finally, the red dye layer on the substrate is removed by immersing the glass substrate after vapor deposition in the previously used resist developer and stirring to dissolve the resist pattern while removing unnecessary parts of the vapor deposited dye layer from the substrate. The color filter of the present invention was obtained by buttering into stripes.

Even through these series of steps, the vapor-deposited dye layer on the substrate did not suffer any damage, and almost no deterioration in the spectral characteristics of the vapor-deposited dye layer was observed.

The spectral time ゛i of the obtained red dye layer is expressed as the song Sj! in Figure 7. 8
Shown below. As shown in this figure, excellent red spectral characteristics were obtained.

Example 2 First, a green stripe pattern was formed on a glass substrate as the first color, and copper octa 4.5- was used as the dye for forming the vapor-deposited dye layer.
Using phenyl phthalocyanine, it was formed at a predetermined position in the same manner as in Example 1. This copper octa 4.5-
The deposition layer of phenyl phthalocyanine was formed by setting the degree of vacuum in the vacuum chamber to 10-10 degrees tarr, heating the deposition boat to 450-550°C, and making the layer thickness about 3000.

Next, on the glass substrate on which the green stripe pattern was formed, a resist layer was exposed as a second color using a pattern mask corresponding to the shape of the blue stripe pattern, and further as a dye for forming the vapor-deposited dye layer. A blue stripe pattern was formed at a predetermined position on a substrate in the same manner as in Example 1 except that Cu phthalocyanine was used.

The vapor deposition layer made of Cu phthalocyanine was formed by setting the degree of vacuum in the vacuum chamber to 10-' to 10'' torr, heating the vapor deposition boat to 450 to 550°C, and forming the layer to a thickness of about 50°C.
00 people (this was carried out).

Furthermore, on the substrate on which the green and blue stripe patterns have been formed in this way, the resist is exposed as a third color using a pattern mask corresponding to the shape of the red stripe pattern, and as in Example 1. to form a red stripe strip at a predetermined position on the substrate, and
A cloth pattern with three color stripes of (red), G (&J), and B (blue) was obtained.

In the above colored pattern formation process, not only the green and blue dye layers but also the red dye layer do not dissolve at all during the development process, and even during the heat treatment process, these dye layers do not crack, peel, or deteriorate. This did not occur, and the spectral characteristics were not impaired.

Finally, commercially available negative resist 0 is used as a protective film for rubber resin.
DURNOWR (trade name, manufactured by Tokyo Ohka Chemical Co., Ltd.) was applied onto the three-color stripe colored pattern formed as described above, and this was cured by burihake and full-surface exposure.
A three-color stripe color filter of the present invention was completed.

The spectral characteristics of the three-color filter thus formed are shown in FIG.

Example 3 A color liquid crystal display element was manufactured in the following manner using a thin film transistor as a substrate and forming the color filter of the present invention on the substrate.

First, as shown in FIG. 9(a), a glass substrate (product name:
7059, manufactured by Corning Corporation) 1.90 soil with a layer thickness of 1000 people. After forming the T, 0 pixel electrode 91 into a desired pattern by a photolithography process, 100% of A1 is further applied to this surface.
A gate electrode 92 as shown in FIG. 9(b) was formed by vacuum evaporating the film to a thickness of 0.05 mm, and patterning this evaporated layer into a desired shape by a photolithography process.

Next, photosensitive polyimide (product name: Semicofine,
(manufactured by Toshisha Co., Ltd.) on the surface of the substrate 90 on which the electrodes are provided to form an insulating layer 93, and through pattern exposure and development processing to form through holes 94 that constitute contact portions between train electrodes 98 and pixel electrodes 91. It was formed as shown in FIG. 9(C).

Here, the substrate 90 is set at a predetermined position in the deposition tank,
SiH,+ diluted with H2 is introduced into the deposition tank, and a-Si with a thickness of 2,000 layers is deposited on the entire surface of the substrate 90 on which the electrodes 91 and 92 and the insulating layer 93 are provided by a glow discharge method in a vacuum. A photoconductive layer (intrinsic layer) 95 consisting of
After depositing the photoconductive layer 95, an N4 layer 96 having a thickness of 1,000 layers is formed on the photoconductive layer 95 by the same operation as shown in FIG.
Lamination was performed as shown in d). This substrate 90 was taken out from the deposition bath, and the N1 layer 96 and the photoconductive layer 95 were each patterned in the desired shape by dry etching in this order as shown in FIG. 9(e).

Next, on the substrate surface on which the photoconductive layer 95 and the N1 layer 96 are provided, AI is vacuum-deposited to a thickness of 1,000 layers, and then this AI-deposited layer is butter-thinned into a desired shape by a photolithography process. Thus, a source electrode 97 and a train electrode 98 as shown in FIG. 9(f) were formed.

Finally, three colored patterns of red, blue and green are formed as shown in FIG. 9 (9) in the same manner as in Example 2, corresponding to each of the pixel electrodes 91, and then the substrate surface is A polyimide resin serving as an insulating film 99 imparted with an orientation function was applied to a thickness of t+200 on the entire surface, and the resin was cured by heat treatment at 250° C. for 1 hour to produce a thin film transistor with an integrated color filter.

A color liquid crystal display element was further formed using the thus produced thin film transistor with a color filter.

That is, 1000 people were coated on the negative side of a glass substrate (trade name: 7059, manufactured by Corning Inc.) in the same manner as described above. T and O electrode layers were formed, and an insulating layer of 1200 layers thick made of polyimide resin with an orientation function was further formed on the electrode layer, and between this substrate and the previously formed thin film transistor with color filter. A color liquid crystal display element was obtained by enclosing a liquid crystal into the glass and fixing the entire structure.

The color liquid crystal display element thus formed had good functionality, and the same effects as in Examples 1 and 2 were obtained in forming the color filter.

Example 4 Instead of providing a three-color filter on the pixel electrode,
A color liquid crystal display element having a color filter of the present invention was obtained in the same manner as in Example 3 except that it was provided on the counter electrode.

The color liquid crystal display element thus formed had good functionality, and the same effects as in Examples and 2 were obtained in forming a color filter.

Example 5 A wafer on which C(I) (charge, coupled, device) was formed was used as a substrate, and each colored pattern of the color filter was distributed so as to correspond to each light receiving cell of the COD. A color solid-state imaging device having a color filter of the present invention was formed in the same manner as in Example 2, except that a three-color stripe color filter was formed.

The color solid-state imaging device thus formed had good functionality, and nine results similar to those of Examples 1 and 2 were obtained in forming color filters.

Example 6 The color filter formed in Example 2 was placed on a wafer on which a COD (charge, coupled, device) was formed, and each colored pattern of the color filter was colored in correspondence with each light receiving cell of the CCD. A color solid-state image sensor was formed by aligning and pasting the film so that it would be distributed.

The color solid-state imaging device thus formed had good functionality, and the same effects as in Examples 1 and 2 were obtained in forming the color filter.

Example 7 A color photocessor array having the color filter of the present invention as shown in the partial plane diagram of FIG. 10 was formed as follows according to the steps shown in FIG. 11.

First, a photoconductive layer (intrinsic layer) consisting of an a-3i (amorphous silicon) layer was formed on a glass substrate (trade name: 7059, manufactured by Corning Inc.) 110 by a glow discharge method, as shown in FIG. 11(a). It was set up like this.

That is, SiH diluted to 10% by volume with H2 was heated at a gas pressure of 0.50 Torr and RF (Radio Freq).
A photoconductive layer 111 with a thickness of 0.7 scale was obtained by depositing the photoconductive layer on the substrate for 2 hours at a power of 10 W and a substrate temperature of 250°C.

Subsequently, an n'' layer 112 was provided on this photoconductive layer 111 by a glow discharge method as shown in FIG. 11(b).

That is, SiH+ diluted to 10% by volume with H2,
PH3 diluted to 110 pm with H2
The N4 layer 112 having a layer thickness of 01-01 was provided in succession to the photoconductive layer 111 using the gas mixed in step 1 as a raw material and using the same conditions as the previous deposition conditions for the photoconductive layer.

Next, as shown in FIG. 11(c), AI was deposited to a thickness of 0.3 scales on the N4 layer 112 by electron beam evaporation, and a conductive layer 113 was laminated. As shown in Figure (d), a portion of the conductive layer +13 corresponding to the portion that will become the light conversion portion was removed.

In other words, positive microposite + 300-27
(Product name, manufactured by 5hipley) After forming a photoresist pattern in the desired shape using photoresist,
The exposed areas (where the resist pattern is formed) are etched using an etching solution containing phosphoric acid (85% aqueous solution), nitrous N (60% aqueous solution), glacial acetic acid, and water in a ratio of 16:I:2.1. The portions of the conductive layer 113 (the portions not covered) were removed from the substrate, and a common electrode 115 and individual electrodes 114 were formed.

Next, layer 04+12 of the part that will become the light conversion part is shown in Figure 11 (
This was removed as shown in e).

That is, the above-mentioned Microposit+300-277 photoresist was peeled off from the substrate and etched with RF power using a plasma etching method (also known as reactive ion etching method) using a parallel plate type plasma etching device EM-451 (manufactured by Nichiden Anelva Co., Ltd.). 120W, gas pressure 0. I
Dry etching was performed using CF4 gas at Torr for 5 minutes to remove exposed portions of the n'' layer 112 and the surface layer of the photoconductive layer 111 from the substrate.

In this example, a polysilicon sputtering target (8 inch,
(purity 99.999%), place the sample on top of it, cover the exposed part of the cathode material SUS with a Teflon sheet cut out in a donut shape, and perform etching with the 303 side barely exposed to plasma. I did it. Thereafter, a heat treatment was performed at 200° C. for 60 minutes in an oven in which a fluorine gas was flowed at a rate of 3 A/min.

Next, a protective layer was formed on the surface of the photosensor array thus created in the following manner.

That is, a silicon nitride layer 116 as a protective layer was formed on the photosensor array by a glow discharge method.

That is, a mixed gas of SiH,+ diluted to 10% by volume with H7 and 100% NHat I mixed at a flow rate ratio of 4 was used, and the other conditions were the same as in the previous formation of the a-Si layer. Silicon nitride with a layer thickness of .5μm (
A-SiNH) layer 116 was formed as shown in FIG. 11(f).

Furthermore, using this protective layer 116 as a substrate, a color filter consisting of colored batts in three colors, blue 5, green 4, and red 6, was formed in the same manner as in Example 2, as shown in FIG. 10.
A color photosensor array was formed in which colored filters were disposed on each photosensor.

Even in the color photosensor array formed in this example, the color filters were formed in the same way as in Examples 1 and 2.
It is possible to obtain the same effect as in
A color photo sensor with an excellent color filter is obtained. Therefore, the reading accuracy of the color 7 sensor is improved, and since the adhesion with the protective layer is good, the occurrence of bit defects due to cracks, cracks, etc. is reduced, and the yield is improved.

Example 8 A color photosensor array was formed by pasting the color filter formed in Example 2 onto the photosensor array formed in Example 7 using an adhesive.

The color photosensor formed in this example also had good functionality, similar to that formed in Example 7.

[Effects of the Invention] According to the present invention, the colored layer has excellent heat resistance, solvent resistance, and adhesion resistance.
Since it is formed by vapor deposition of a dye that is excellent in 1 and also excellent in spectroscopy, it is difficult to form a dye layer by vapor deposition, patterning of the vapor-deposited dye layer, etc., and the optical function of the formed color filter. We were able to provide an excellent color filter from this point of view as well. In particular, by using a perinone dye with a strong molecule n and molecule-substrate bond ``i'' in the red dye layer, which conventionally lacked stability in terms of adhesion to the substrate, the adhesion and spectral properties can be improved by vapor deposition. A color filter having an excellent red dye layer could be obtained.

Therefore, in the reading sensor having the color filter of the present invention, the reading accuracy is greatly improved. Furthermore, since the color filter of the present invention has good adhesion, when the color filter of the present invention is installed in an element that handles a large number of parts (for example, a photo sensor, a thin film transistor, a COD, etc.), bits due to cracks or cracks can be prevented. Defect generation is reduced and yield is improved.

[Brief explanation of drawings]

Figures 1 to 6 are process diagrams for explaining the manufacturing method of the color filter of the present invention, and Figure 7 is the spectral transmission of the red pigment layer of the color filter of the present invention obtained in Example 1. FIG. 8 is a graph showing the spectral transmittance of the dye layer of the color filter of the present invention obtained in Example 2, and FIGS. 9(a) to (h) are graphs showing the spectral transmittance of the color filter of the present invention obtained in Example 2. The manufacturing process diagram and detailed IO diagram of a color liquid crystal display element having a color filter are a schematic plan partial view of a color photosensor array having a color filter of the present invention, and the 11th
Figures (a) to (9) are process diagrams for forming the color photosensor array shown in Figure 11. 1, 90.110: Substrate 2 resist pattern 3: Dye layer 4.5.6: Patterned dye layer 7/protective layer 8. Spectral characteristics of red pigment layer 9:
Spectral characteristics of green dye layer 10: Spectral characteristics of blue dye layer 95, III: Photoconductive layer 96,112·n′″ layer 1
13 ・Conductive layer 114 Individual electrode 115
Common electrode 116: Protective layer 91: Pixel electrode
92: Gate electrode 93, 99° twill layer 94, through hole 97, source electrode 98 co-drain electrode.

Claims (9)

[Claims] (1) A color filter characterized by having a red dye layer formed by vapor-depositing a perinone dye. (2) The color filter according to claim 1, wherein the perinone dye is perinone or a derivative thereof represented by the following structural formula (I) or (II). ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(II) (In the above formula, R represents H, OC_2H_5, or Cl, etc.) (3) The color filter according to claim 1 or 2, wherein the red dye layer is a patterned red dye layer provided on a substrate. (4) After the perinone-based dye is vapor-deposited on the substrate in which the red dye layer has a resist pattern, the portion of the dye vapor-deposited layer provided on the resist pattern is removed from the substrate together with the resist pattern. Claim 3, which is a patterned red dye layer formed by
Color filter as described in section. (5) The color filter according to claim 3 or 4, wherein the substrate is a display section of a display device. (6) The color filter according to claim 3 or 4, wherein the substrate is a solid-state image sensor. (7) The color filter according to claim 3 or 4, wherein the substrate is a light receiving surface of an image sensor. (8) A color photosensor array in which a color filter consisting of a colored pattern having a red dye layer is provided on the photosensor array, characterized in that the red dye layer is formed by vapor-depositing a perinone dye. color photo sensor array. (9) The color photosensor array according to claim 8, wherein the perinone dye is perinone or a derivative thereof represented by the following structural formula (I) or (II). ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(II) (In the above formula, R represents H, OC_2H_5, or Cl, etc.)