JPS6311732Y2 - - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to a storage container for semiconductor devices, and is an improvement of a conductive resin storage container mainly intended for MOS type semiconductor devices.

In MOS semiconductor devices, static electricity is easily charged between the semiconductor substrate and metal electrodes, and this builds up to a fairly high voltage, which often instantly destroys the functionality of the semiconductor device.

Conventionally, in order to prevent such destruction, a method has been adopted in which the leads of a MOS structure semiconductor device are inserted into a conductive sponge to establish electrical continuity between the leads.

However, the above-mentioned conductive sponge is made of synthetic sponge rubber or the like with fine powder of a conductive substance such as carbon C or iron Fe permeated or deposited into the porous structure of the sponge. When plugged and unplugged, the fine powder of the conductive material is scattered and often gets into the tester or socket, causing failure or malfunction.

As a countermeasure to this problem, attempts have been made to mold conductive resin to create containers for housing semiconductor devices. The problem was that there were a lot of problems and the costs were high.

The present invention has been made to solve these problems, and an object of the present invention is to provide a versatile conductive resin semiconductor device storage container that does not cause scattering of conductive fine powder.

A feature of the present invention is that, in a storage container for a semiconductor device having a plurality of lead terminals, a groove is formed with a width gradually narrowing from both sides of the surface toward the bottom, and the bottom has a width large enough to tighten the lead terminals.
The conductive resin is molded so that the lead terminals are arranged in parallel at the shortest pitch.

The details of the present invention will be explained below with reference to the drawings.

FIG. 1 is a perspective view of essential parts of an embodiment of the present invention. The semiconductor device storage container 1 is made of conductive resin, and grooves 2 are provided in parallel on the entire surface with a pitch p. In this example, the pitch p was set to 2.54 mm. Further, the width of the top portion 4 of the groove 2 is wider than the width of the bottom portion 3.

The reason why the grooves 2 are arranged in parallel at a pitch of 2.54 mm in this embodiment as described above is as follows.

Semiconductor devices, such as integrated circuits and transistor arrays, which have a large number of terminals and whose terminal leads are inserted and fixed into holes on a printed circuit board, must be manufactured so that the arrangement of the terminal leads matches the arrangement of the holes on the printed circuit board. It is being A typical printed circuit board has holes at a pitch of 2.54 mm both vertically and horizontally. In other words, as shown in FIG. 2, two sets of parallel lines Ai (i=
1, 2, . . . , n) and Bj (j=1, 2, . . . , m) are orthogonally crossed, the intersection point AiBj of the two becomes the position of the hole in the printed circuit board. The position of the lead of the semiconductor device corresponds to the position of the hole of the printed circuit board, that is, any position of the intersection AiBj in FIG. 2.

Therefore, the intersection point shown in Figure 2 is formed on the entire surface of the conductive resin plate.
By making a hole at a position corresponding to AiBj, the leads of the semiconductor device can be housed by inserting them into the hole. However, in this case, it is necessary to align the leads of the semiconductor device with the holes, which is complicated. Therefore, if one of the two groups of parallel lines in FIG. 2, for example, the portion corresponding to the group of parallel lines Bj, is made into a groove, it is convenient to avoid the complexity of positioning when storing the semiconductor device.

FIG. 3 shows an example of the state in which an integrated circuit is housed in the embodiment of FIG. 1, which was manufactured for the purpose described above. The storage container 1 is manufactured by molding conductive resin, and has grooves 2 arranged in parallel at a pitch of 2.54 mm. Leads 6 and 7 of a dual-in-line type integrated circuit (hereinafter abbreviated as DIT IC) 5 are inserted into the groove 2. The depth of groove 2 is
Since the lead length is made shallower than the length of the leads below the bottom surface 8 of the base of the DIT IC 5, the tips of the leads 6 and 7 are tightened to the bottom 3 of the groove 2, creating electrical continuity between the leads and preventing the IC from being destroyed. I'm here. As for the arrangement of the leads, since the distance between leads 6 and 7 is 5.08 mm, they fit exactly into two grooves 2 pitches apart as shown in the figure. Furthermore, when storing the DIT IC, the width of the top 4 of the groove 2 is wide, making it easy to insert the lead.

4 shows the bottom of another type of integrated circuit, in which the leads 6 are arranged in two rows on the four sides. In this case, the spacing between adjacent leads and the spacing between the inner and outer leads are both 2.54 mm. It is therefore clear that this case can also be housed in the housing of the embodiment shown in FIG. 1.

FIG. 6 is a perspective view of the storage container of the embodiment shown in FIG. 1 in which various semiconductor devices 10 and 20 are stored. The semiconductor device 10 is a DIT type, and the semiconductor device 20 is a 4
This type has multiple lead terminals on each side. In the storage container 1 of this embodiment, the grooves 2 are provided at a pitch p of 2.54 mm (100 mil), which is the shortest distance between lead terminals, so that any type of semiconductor device can be accommodated. The IC 10 has lead terminals arranged at a pitch p, and the IC 20 has lead terminals arranged at a pitch p between adjacent lead terminals, and a pitch 5 p between lead terminals on opposing sides. Of course, an IC with leads arranged as shown in Fig. 4 can also be accommodated.

FIG. 5 is a cross-sectional view of the semiconductor storage container shown in FIGS. 1, 3, and 6 in a direction perpendicular to the groove direction. In this embodiment, the width of the bottom 3 of the groove 2 is made narrower than the thickness of the lead. When a lead is inserted into this groove 2 and pressed from the top, the tip of the lead bites into the bottom 3 and is firmly held, ensuring complete continuity between each lead and preventing it from falling out even with slight vibration, making it easy to handle. It becomes more convenient.

Furthermore, if the lead spacing becomes narrower due to the miniaturization of integrated circuits or the increase in the degree of integration, the storage container according to the present invention can be made by matching the pitch of the grooves to the lead spacing.

As explained above, according to the storage container of the present invention, the electrostatic countermeasure function for protecting MOS type semiconductor devices is not impaired, and conductive fine powder does not scatter as dust, thereby preventing device failures and malfunctions. We were able to make it possible and have versatility.

[Brief explanation of drawings]

FIG. 1 is a perspective view of essential parts showing an embodiment of the present invention;
Fig. 2 is a drawing for explaining the relationship between the position of the groove of the present invention and the position of the lead of the semiconductor device, and Fig. 3 is a diagram showing the state when the embodiment of Fig. 1 is used in a DIT IC. FIG. 4 is a lead arrangement diagram of an integrated circuit of a different type from DIT IC, FIG. 5 is a cross-sectional view of the semiconductor storage container of the present invention in a direction perpendicular to the groove direction, and FIG. 6 is a diagram showing various types of integrated circuits. FIG. 1... conductive resin semiconductor device storage container, 2...
...Groove, 3...Bottom of the groove, 4...Top of the groove, p...
The pitch of the groove.

Claims (1)

[Scope of utility model registration request] In a storage container for a semiconductor device having a plurality of lead terminals, a groove whose width is gradually narrowed from both sides of the surface toward the bottom, and whose bottom part has a width enough to tighten the lead terminals is the shortest distance between the lead terminals. A storage container for semiconductor devices characterized by being formed by molding a conductive resin so that they are arranged in parallel at a pitch.