JPS6381867U - - Google Patents
Info
- Publication number
- JPS6381867U JPS6381867U JP17460286U JP17460286U JPS6381867U JP S6381867 U JPS6381867 U JP S6381867U JP 17460286 U JP17460286 U JP 17460286U JP 17460286 U JP17460286 U JP 17460286U JP S6381867 U JPS6381867 U JP S6381867U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- halogen lamps
- crystal manufacturing
- melting method
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000004857 zone melting Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施の態様の模式図であつ
て、同図イはその正面図、第２図は浮遊帯域溶融
法の説明図である。 １……原料多結晶、２……成長結晶、３……加
熱コイル、４……反射板、５……ハロゲンランプ
、６……種結晶、７……導軸、８……溶融域、９
……電流調節器。
て、同図イはその正面図、第２図は浮遊帯域溶融
法の説明図である。 １……原料多結晶、２……成長結晶、３……加
熱コイル、４……反射板、５……ハロゲンランプ
、６……種結晶、７……導軸、８……溶融域、９
……電流調節器。
Claims (1)
- 浮遊帯域溶融法による結晶製造装置において、
結晶育成時の成長結晶の周囲に１個または２個以
上の出力調整可能のハロゲンランプを配設すると
ともに、該ハロゲンランプの背後に反射板を設け
てなる結晶製造装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17460286U JPS6381867U (ja) | 1986-11-12 | 1986-11-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17460286U JPS6381867U (ja) | 1986-11-12 | 1986-11-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6381867U true JPS6381867U (ja) | 1988-05-30 |
Family
ID=31113141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17460286U Pending JPS6381867U (ja) | 1986-11-12 | 1986-11-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381867U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150013299A (ko) * | 2012-08-02 | 2015-02-04 | 실트로닉 아게 | 용융 영역에서의 단결정의 결정화에 의한 상기 단결정의 제조 장치 |
-
1986
- 1986-11-12 JP JP17460286U patent/JPS6381867U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150013299A (ko) * | 2012-08-02 | 2015-02-04 | 실트로닉 아게 | 용융 영역에서의 단결정의 결정화에 의한 상기 단결정의 제조 장치 |
| CN104540984A (zh) * | 2012-08-02 | 2015-04-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
| JP2015522518A (ja) * | 2012-08-02 | 2015-08-06 | ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ | 溶融領域における単結晶の結晶化により単結晶を製造するための装置 |
| US9932690B2 (en) | 2012-08-02 | 2018-04-03 | Siltronic Ag | Device for producing a monocrystal by crystallizing said monocrystal in a melting area |
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