JPS6410616A - Method and device for growth of compound semiconductor crystal - Google Patents
Method and device for growth of compound semiconductor crystalInfo
- Publication number
- JPS6410616A JPS6410616A JP16634187A JP16634187A JPS6410616A JP S6410616 A JPS6410616 A JP S6410616A JP 16634187 A JP16634187 A JP 16634187A JP 16634187 A JP16634187 A JP 16634187A JP S6410616 A JPS6410616 A JP S6410616A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- thin film
- reactive gas
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 8
- 239000010409 thin film Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To enhance a characteristic of a device by a method wherein the surface of a substrate is etched by making use of a surface chemical reaction of a reactive gas so that an oxide film and a carbon impurity can be removed at a low temperature and that a good re-growth thin film having a defectless and clean interface can be obtained. CONSTITUTION:A reactive gas is supplied to the surface of a III-V compound semiconductor crystal substrate under a high vacuum of less than 10<-3> Torr while a substrate temperature is set at lower than 500 deg.C. A process to epitaxially grow a semicondcutor crystal thin film on this crystal substrate by using a molecular beam is provided. As an apparatus to realize this method, a substrate preparation chamber 1 which is equipped with substrate holders 10 to heat the substrate 3 and with a gas inlet pipe 4 to introduce the reactive gas and which can maintain an ultrahigh vacuum is installed. A growth chamber 6 which is connected to the substrate preparation chamber and which grows the compound semicondcutor crystal thin film epitaxially by using the molecular beam is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16634187A JPS6410616A (en) | 1987-07-02 | 1987-07-02 | Method and device for growth of compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16634187A JPS6410616A (en) | 1987-07-02 | 1987-07-02 | Method and device for growth of compound semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6410616A true JPS6410616A (en) | 1989-01-13 |
Family
ID=15829573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16634187A Pending JPS6410616A (en) | 1987-07-02 | 1987-07-02 | Method and device for growth of compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410616A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0813232A3 (en) * | 1996-05-15 | 1998-09-02 | Nec Corporation | Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate |
-
1987
- 1987-07-02 JP JP16634187A patent/JPS6410616A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0813232A3 (en) * | 1996-05-15 | 1998-09-02 | Nec Corporation | Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate |
| US5920795A (en) * | 1996-05-15 | 1999-07-06 | Nec Corporation | Method for manufacturing semiconductor device |
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