JPS6417478A - Semiconductor storage cell - Google Patents

Semiconductor storage cell

Info

Publication number
JPS6417478A
JPS6417478A JP62174123A JP17412387A JPS6417478A JP S6417478 A JPS6417478 A JP S6417478A JP 62174123 A JP62174123 A JP 62174123A JP 17412387 A JP17412387 A JP 17412387A JP S6417478 A JPS6417478 A JP S6417478A
Authority
JP
Japan
Prior art keywords
film
substrate
region
nitride film
tunnel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62174123A
Other languages
Japanese (ja)
Inventor
Tsuneo Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP62174123A priority Critical patent/JPS6417478A/en
Publication of JPS6417478A publication Critical patent/JPS6417478A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce a band gap of a tunnel region and to reduce writing/erasing voltages by forming the tunnel region between a nitride film to be injected with charge and a substrate of a 2-layer structure of the nitride film in contact with the substrate and an oxide film. CONSTITUTION:A first nitride film 13 in contact with a silicon substrate 1 is formed over between a source region S and a drain region D on the substrate 1, a second nitride film 15 is formed through a first oxide film 15 on the film 13, and a control gate 6 is formed through the film 12 on the film 15. Thus, when a tunnel region between the film 15 to be injected with charge and the substrate 1 is formed of a 2-layer structure of the films 13, 14, the band gap of energy in the tunnel region can be reduced. As a result, writing/erasing voltages can be reduced.
JP62174123A 1987-07-13 1987-07-13 Semiconductor storage cell Pending JPS6417478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62174123A JPS6417478A (en) 1987-07-13 1987-07-13 Semiconductor storage cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62174123A JPS6417478A (en) 1987-07-13 1987-07-13 Semiconductor storage cell

Publications (1)

Publication Number Publication Date
JPS6417478A true JPS6417478A (en) 1989-01-20

Family

ID=15973052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62174123A Pending JPS6417478A (en) 1987-07-13 1987-07-13 Semiconductor storage cell

Country Status (1)

Country Link
JP (1) JPS6417478A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1637339A1 (en) 2004-09-21 2006-03-22 Ricoh Company, Ltd. Thermal recording material
JP5196500B2 (en) * 2007-05-24 2013-05-15 独立行政法人産業技術総合研究所 Storage element and reading method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206077A (en) * 1981-06-12 1982-12-17 Nec Corp Non volatile memory device
JPS59188977A (en) * 1983-04-12 1984-10-26 Citizen Watch Co Ltd Manufacture of semiconductor non volatile memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206077A (en) * 1981-06-12 1982-12-17 Nec Corp Non volatile memory device
JPS59188977A (en) * 1983-04-12 1984-10-26 Citizen Watch Co Ltd Manufacture of semiconductor non volatile memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1637339A1 (en) 2004-09-21 2006-03-22 Ricoh Company, Ltd. Thermal recording material
US7476643B2 (en) 2004-09-21 2009-01-13 Ricoh Company, Ltd. Thermal recording material and thermal recording label
JP5196500B2 (en) * 2007-05-24 2013-05-15 独立行政法人産業技術総合研究所 Storage element and reading method thereof

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