JPS641851B2 - - Google Patents
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- Publication number
- JPS641851B2 JPS641851B2 JP9115878A JP9115878A JPS641851B2 JP S641851 B2 JPS641851 B2 JP S641851B2 JP 9115878 A JP9115878 A JP 9115878A JP 9115878 A JP9115878 A JP 9115878A JP S641851 B2 JPS641851 B2 JP S641851B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- cobalt
- hexagonal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000000758 substrate Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 20
- 239000010941 cobalt Substances 0.000 description 17
- 229910017052 cobalt Inorganic materials 0.000 description 17
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 17
- 239000010408 film Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
本発明は磁気テープや磁気デイスク等の磁気記
録媒体の製造方法にかかり、特に高抗磁力の磁性
薄膜を用いて構成された磁気記録媒体の製造方法
を提供しようとするものである。
磁気記録媒体としてコバルト、鉄、ニツケル、
または、少なくともこれらを含む合金で構成され
た高抗磁力の磁性薄膜は、磁性層の厚みδを容易
に薄くすることができるものであるので、磁性層
の厚み損失を少なくすることができ、記録波長λ
を短くする、つまり短波長域まで記録することが
できるものであるため、高密度用記録媒体として
有望視されている。しかし、このような磁性薄膜
を製造する従来の方法について第1図を用いて説
明すると、真空容器1内を10-4〜10-6Torrの真
空度に排気した後、蒸発源バス2にしこまれたコ
バルト、鉄、ニツケル、あるいは少なくともこれ
らを含む合金の溶解物3を溶解させて蒸発させ、
蒸発粒子の入射方向に対して被蒸着面の垂直方向
を角度αだけ傾けて配置した基体4の表面に付着
堆積させていた。このような斜め蒸着法で作られ
た磁性薄膜の磁気特性は前記角度αに依存し、高
抗磁力Hcの特性を得るにはα=90゜近い傾きを必
要とするため、これまでの方法には収率の点で問
題があつた。αが0゜のときと、80゜のときとを単
純な計算で比較してみると明らかなように、
cos0゜/cos80゜≒10であり、基体4をα=80゜に傾
けると、傾けないα=0゜のときに比べて10倍近い
量の溶解物3を使用しなければならない。さら
に、コバルトは資源的に希少なものの一つであ
り、価格的に高価な金属でもあるので、それを浪
費することは経済的に非常に望ましくない。この
ようなことから、従来の斜め蒸着法で磁性薄膜を
得る方法にはコスト的に大きな問題があつた。
本発明は、磁性薄膜の有する高抗磁力の原因に
立脚したものである。例としてコバルトをあげて
説明すると、コバルトは結晶学的には六方晶系で
あり、そのC軸方向を容易方向とした10゜エル
グ/c.c.オーダーの結晶磁気異方性エネルギーを有
している。一方斜め蒸着法で製造された高抗磁力
を有するコバルト膜は、一例としてα=80゜の場
合、CuのKα線を放射線源とし、ASTM規格でX
線回折により調べると(OO2)面からの強度I
(002)と全ての面からの強度和との比I(002)/
ΣI(hkl)(h、k、lは面指数を示す。)の値が
0.2と非常に小さいものである。したがつて、斜
め蒸着法で作られたコバルト膜は、基体の表面に
垂直な方向にC軸成分がきわめて少なく、そのC
軸成分の多くは基体面と平行にあるものである。
磁気特性を調べると磁化され易く、高抗磁力を示
す蒸発粒子の入射方向に平行な方向(C軸方向)
では約1000エルステツドであり、入射方向に直角
な方向と基体の面に垂直な方向では入射方向と平
行な方向の値のほぼ半分の抗磁力しかない。
これに対して、α=0゜つまり基体を蒸発粒子の
入射方向に対して傾けないでコバルト膜を製造す
ると、X線回折の結果によれば、I(002)/ΣI
(hkl)が0.8以上の値を示す。したがつて、α=
0゜ではC軸成分の多くが基体の面に垂直な方向に
向いていると考えられる。磁気特性を調べると、
基体の面に垂直な方向すなわち、C軸方向では約
300エルステツドであり、入射方向と直角な方向
では、基体の面と垂直な方向の値のおおむね半分
の値の抗磁力である。
上記α=0゜、80゜における結晶学的結論と磁気
特性の結果との関係を言うならば、C軸成分が多
く配向された方向に高い抗磁力を有すると考えら
れる。したがつて、コバルトを磁性記録媒体とし
て用いる場合、たとえば磁気テープでは、磁気テ
ープ面と平行な方向の抗磁力を高めるためには、
コバルト膜のC軸成分をテープの長手方向と平行
な方向に配向することが重要なこととなる。
本発明は、支持体上にその面と平行な方向にC
軸成分を多く配向した結晶学的に構造が六方晶系
の非磁性層を特定条件であらかじめ設けておき、
さらにこの非磁性層上に六方晶系の磁性薄膜を形
成することによつて、上述のような特性上、経済
上の問題点を解決することができたものである。
以下、その詳細について説明する。
第2図は本発明にかかる磁気記録媒体の構造の
一例を示す。図において、11は非磁性の支持基
体で、たとえばポリエチレンテレフタレートやポ
リアミド、ポリイミドといつた樹脂、アルミニウ
ム、ステンレススチール、あるいはガラス等で構
成される。12は非磁性層で、支持体11の表面
と平行な方向にC軸成分が多く配向するよう優先
成長させた六方晶系の薄膜である。その構成材料
としてはチタンが有効である。13は六方晶系の
磁性薄膜で、下地の非磁性層12上にα=0゜に近
い角度で積層形成したものである。この磁性薄膜
13の材料としてコバルトが有効であり、そのほ
かの例としてコバルト−鉄やコバルト−ニツケル
といつた六方晶系の合金をあげることができる。
この六方晶系の磁性薄膜13は、支持基体11の
面と平行な方向にC軸が多く配向するよう優先成
長させた六方晶系の非磁性層12の影響を受けて
成長し、支持基体11の面と平行な方向にC軸成
分を多く配向するようになる。
以上の説明では磁性薄膜が単一層である場合を
例に述べて来たが、非磁性中間層を含む多層構造
であつても、この中間層が結晶学的構造に六方晶
系でかつ支持基体の面に対して平行な方向にC軸
成成を多く配向した薄膜であれば、本発明の目的
を達成することができる。
支持基体の面と平行な方向にC軸成分を多く配
向した下地層、さらには中間層を優先成長させる
には、蒸発粒子の入射方向に対して基体の被蒸着
面の垂直方向を傾けて、たとえばチタン膜を積層
させる際、その形成速度が重要なパラメーターと
なつてくる。すなわち、毎分30Åの形成速度の場
合には所望の結晶学的性質をもつチタン膜を得る
ことができず、毎分2000Å以上の形成速度の場合
に、希望する性質をもつたチタン膜を再現性よく
形成することができる。
以下、実施例にもとづいて詳細に説明する。
実施例 1
ソーダガラスからなる非磁性支持基体上に、結
晶学的構造が六方晶系でその面に平行な方向にC
軸成分を多く配向したチタン層を形成させた。多
くのC軸成分が支持基体の面に平行な方向となる
ようチタンの下地層を優先成長させるには、チタ
ンを斜め蒸着法で積層させる。すなわち、ここで
は10-5Torrの真空度の容器中において、入射角
α=70゜、支持基体の温度200℃、蒸着形成速度
2000Å/分の条件の下で、2.5μmの厚さのチタン
層を形成した。このチタン層をCuのKα線を放射
線源にしてX線回折で調べたところ、第3図に示
すように、回折角2θにおいてC軸方向と直交する
(002)面の強度は全く見られなく、つまり支持基
体の表面に対して垂直な方向にはC軸成分がみら
れず、支持基体の表面に対して平行な方向にC軸
成分がきわめて多く配向されていることがわか
る。このようにして得られたチタン層上に、真空
度10-5Torr、α=20゜、蒸着速度1.5Å/分、基体
温度はほぼ室温の条件で、コバルトを蒸着させ、
磁性薄膜を形成した。その抗磁力を第1表に示
す。なお、比較のため、ガラス支持基体上に、チ
タン層を設けることなく、上述と同じ条件でコバ
ルトを蒸着して磁性薄膜を形成し、その抗磁力を
調べた。その比較例の結果も第1表に示す。
The present invention relates to a method of manufacturing a magnetic recording medium such as a magnetic tape or a magnetic disk, and particularly aims to provide a method of manufacturing a magnetic recording medium constructed using a magnetic thin film with high coercive force. Cobalt, iron, nickel, magnetic recording media
Alternatively, a magnetic thin film with high coercive force made of an alloy containing at least these materials can easily reduce the thickness δ of the magnetic layer, thereby reducing the thickness loss of the magnetic layer and recording. wavelength λ
Since it is possible to shorten the wavelength, that is, to record up to a short wavelength range, it is seen as a promising medium for high-density recording. However, to explain the conventional method of manufacturing such a magnetic thin film using FIG . melting and evaporating a melt 3 of cobalt, iron, nickel, or an alloy containing at least these;
The evaporated particles were deposited on the surface of a substrate 4 which was arranged so that the perpendicular direction of the surface to be evaporated was inclined at an angle α with respect to the direction of incidence of the evaporated particles. The magnetic properties of a magnetic thin film made by such an oblique deposition method depend on the angle α, and in order to obtain the characteristics of high coercive force Hc, an inclination of α = close to 90° is required. There was a problem in terms of yield. As is clear from a simple calculation of when α is 0° and when α is 80°,
cos0°/cos80°≒10, and when the substrate 4 is tilted at α=80°, nearly 10 times the amount of melt 3 must be used compared to when α=0° without tilting. Furthermore, since cobalt is one of the rare resources and an expensive metal, it is economically very undesirable to waste it. For this reason, the conventional method of obtaining a magnetic thin film using the oblique vapor deposition method has had a major problem in terms of cost. The present invention is based on the cause of the high coercive force of magnetic thin films. Taking cobalt as an example, cobalt is crystallographically hexagonal and has magnetocrystalline anisotropy energy on the order of 10° ergs/cc with its C-axis direction as the easy direction. On the other hand, a cobalt film with high coercive force manufactured by oblique evaporation method, for example, when α = 80°, uses Kα rays of Cu as a radiation source, and according to the ASTM standard,
When examined by line diffraction, the intensity from the (OO2) plane I
The ratio of (002) to the sum of intensities from all sides I(002)/
The value of ΣI(hkl) (h, k, l indicate surface index) is
It is very small at 0.2. Therefore, a cobalt film made by oblique evaporation has very little C-axis component in the direction perpendicular to the surface of the substrate;
Most of the axial components are parallel to the substrate surface.
When examining magnetic properties, the direction parallel to the direction of incidence of evaporated particles that is easily magnetized and exhibits high coercive force (C-axis direction)
The coercive force in the direction perpendicular to the direction of incidence and in the direction perpendicular to the plane of the substrate is only about half of the value in the direction parallel to the direction of incidence. On the other hand, if α=0°, that is, if a cobalt film is manufactured without tilting the substrate with respect to the incident direction of the evaporated particles, then according to the X-ray diffraction results, I(002)/ΣI
(hkl) indicates a value of 0.8 or more. Therefore, α=
At 0°, most of the C-axis components are considered to be oriented in a direction perpendicular to the plane of the substrate. Examining the magnetic properties,
In the direction perpendicular to the plane of the base, that is, in the C-axis direction, approximately
300 oersted, and the coercive force in the direction perpendicular to the direction of incidence is approximately half the value in the direction perpendicular to the plane of the substrate. Regarding the relationship between the crystallographic conclusion and the magnetic property results at α=0° and 80°, it is considered that the coercive force is higher in the direction in which the C-axis component is oriented more. Therefore, when cobalt is used as a magnetic recording medium, for example in a magnetic tape, in order to increase the coercive force in the direction parallel to the magnetic tape surface,
It is important to orient the C-axis component of the cobalt film in a direction parallel to the longitudinal direction of the tape. The present invention provides C
A nonmagnetic layer with a crystallographic hexagonal structure with many axial components oriented is prepared in advance under specific conditions.
Furthermore, by forming a hexagonal magnetic thin film on this nonmagnetic layer, the above-mentioned problems in terms of characteristics and economy can be solved. The details will be explained below. FIG. 2 shows an example of the structure of a magnetic recording medium according to the present invention. In the figure, reference numeral 11 denotes a non-magnetic supporting substrate, which is made of, for example, resin such as polyethylene terephthalate, polyamide, or polyimide, aluminum, stainless steel, or glass. Reference numeral 12 denotes a nonmagnetic layer, which is a hexagonal thin film grown preferentially so that a large amount of the C-axis component is oriented in a direction parallel to the surface of the support 11. Titanium is effective as its constituent material. Reference numeral 13 denotes a hexagonal magnetic thin film, which is laminated on the underlying nonmagnetic layer 12 at an angle close to α=0°. Cobalt is effective as a material for the magnetic thin film 13, and other examples include hexagonal alloys such as cobalt-iron and cobalt-nickel.
This hexagonal magnetic thin film 13 grows under the influence of the hexagonal non-magnetic layer 12 which is preferentially grown so that many C-axes are oriented in the direction parallel to the surface of the support base 11. Many of the C-axis components are oriented in the direction parallel to the plane of . The above explanation has been based on the case where the magnetic thin film is a single layer, but even if the magnetic thin film has a multilayer structure including a non-magnetic intermediate layer, this intermediate layer has a hexagonal crystallographic structure and a supporting substrate. The object of the present invention can be achieved if the thin film has a large number of C-axis components oriented in a direction parallel to the plane. In order to preferentially grow an underlayer and an intermediate layer in which a large amount of the C-axis component is oriented in a direction parallel to the surface of the supporting substrate, the direction perpendicular to the surface of the substrate to be evaporated is tilted with respect to the direction of incidence of the evaporated particles. For example, when stacking titanium films, the formation speed is an important parameter. In other words, a titanium film with the desired crystallographic properties cannot be obtained at a formation rate of 30 Å per minute, and a titanium film with the desired properties cannot be obtained at a formation rate of 2000 Å per minute or more. It can be formed easily. Hereinafter, a detailed explanation will be given based on examples. Example 1 On a non-magnetic supporting substrate made of soda glass, a crystal with a hexagonal crystal structure and C
A titanium layer with many axial components oriented was formed. In order to preferentially grow the titanium underlayer so that most of the C-axis components are parallel to the plane of the supporting substrate, titanium is laminated by an oblique vapor deposition method. That is, here, in a container with a vacuum of 10 -5 Torr, the incident angle α = 70°, the temperature of the supporting substrate 200°C, and the deposition rate.
A titanium layer with a thickness of 2.5 μm was formed under the conditions of 2000 Å/min. When this titanium layer was examined by X-ray diffraction using Cu's Kα rays as a radiation source, as shown in Figure 3, no intensity was observed in the (002) plane perpendicular to the C-axis direction at a diffraction angle of 2θ. That is, it can be seen that no C-axis component is observed in the direction perpendicular to the surface of the support substrate, and that a large amount of C-axis component is oriented in the direction parallel to the surface of the support substrate. Cobalt was evaporated onto the titanium layer thus obtained under conditions of vacuum degree 10 -5 Torr, α = 20°, evaporation rate 1.5 Å/min, and substrate temperature approximately room temperature.
A magnetic thin film was formed. The coercive force is shown in Table 1. For comparison, cobalt was deposited on a glass support substrate under the same conditions as described above without providing a titanium layer to form a magnetic thin film, and its coercive force was examined. The results of the comparative example are also shown in Table 1.
【表】
第1表における測定方向は、第4図に示す通り
ガラス基体11の長手方向に平行な方向をX1、
基体の幅方向をX2、基体の面と垂直な方向をX3
としたものであり、面磁化に有効な支持基体の長
手方向に沿つた抗磁力は、下地なしの比較例に比
べて3倍程度高められた。
この結果から明らかなように、本発明によれ
ば、六方晶系の非磁性層を下地層として設けない
場合に比べて、X1方向の抗磁力は3倍と大巾に
向上している。
実施例 2
チタン層の厚さを0.1μmとした以外は、実施例
1と同じ条件で、ガラス支持基体上にチタンの下
地層、コバルト磁性薄膜を順次形成した。比較の
ため、六方晶系の非磁性層を形成することなく、
ガラス支持基体上にコバルト磁性薄膜を形成し
た。それぞれについて、実施例1と同様にして抗
磁力を測定した。その結果を第2表に示す。[Table] The measurement direction in Table 1 is the direction parallel to the longitudinal direction of the glass substrate 11 as shown in FIG .
The width direction of the base is X 2 , the direction perpendicular to the surface of the base is X 3
The coercive force along the longitudinal direction of the support substrate, which is effective for planar magnetization, was increased by about three times compared to the comparative example without a base. As is clear from these results, according to the present invention, the coercive force in the X1 direction is greatly improved by three times compared to the case where a hexagonal nonmagnetic layer is not provided as an underlayer. Example 2 A titanium underlayer and a cobalt magnetic thin film were sequentially formed on a glass support substrate under the same conditions as in Example 1 except that the thickness of the titanium layer was 0.1 μm. For comparison, without forming a hexagonal nonmagnetic layer,
A cobalt magnetic thin film was formed on a glass supporting substrate. For each, the coercive force was measured in the same manner as in Example 1. The results are shown in Table 2.
【表】
上表の結果から明らかなように、六方晶系の非
磁性層の厚さが0.1μmオーダーであつても、抗磁
力の大きいコバルト磁性薄膜が得られる。[Table] As is clear from the results in the above table, a cobalt magnetic thin film with a large coercive force can be obtained even if the thickness of the hexagonal nonmagnetic layer is on the order of 0.1 μm.
第1図は斜め蒸着法を説明するための蒸着装置
の概念的な構成を示す図、第2図は本発明にかか
る磁気記録媒体の構造の一例を示す断面図、第3
図はそのチタン下地層のX線回折の一例を示す
図、第4図はコバルト磁性薄膜の抗磁力を測定す
る際の説明図である。
11……支持基体、12……非磁性層、13…
…磁性薄膜。
FIG. 1 is a diagram showing a conceptual configuration of a vapor deposition apparatus for explaining the oblique vapor deposition method, FIG. 2 is a cross-sectional view showing an example of the structure of a magnetic recording medium according to the present invention, and FIG.
The figure shows an example of X-ray diffraction of the titanium underlayer, and FIG. 4 is an explanatory diagram when measuring the coercive force of the cobalt magnetic thin film. 11...Supporting base, 12...Nonmagnetic layer, 13...
...Magnetic thin film.
Claims (1)
晶系であるチタンの蒸発粒子を前記支持基体の面
の垂直方向に対して傾けた角度で2000Å/分以上
の蒸着形成速度により入射させて、前記支持基体
の表面に非磁性層を形成した後、さらにその上に
六方晶系の磁性薄膜を形成することを特徴とする
磁気記録媒体の製造方法。1. On a non-magnetic supporting substrate, evaporated particles of titanium having a hexagonal crystallographic structure are incident on the supporting substrate at an evaporation formation rate of 2000 Å/min or more at an angle inclined to the direction perpendicular to the surface of the supporting substrate. A method for manufacturing a magnetic recording medium, comprising forming a nonmagnetic layer on the surface of the supporting substrate, and then forming a hexagonal magnetic thin film thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9115878A JPS5517881A (en) | 1978-07-25 | 1978-07-25 | Magnetic recording medium and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9115878A JPS5517881A (en) | 1978-07-25 | 1978-07-25 | Magnetic recording medium and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5517881A JPS5517881A (en) | 1980-02-07 |
| JPS641851B2 true JPS641851B2 (en) | 1989-01-12 |
Family
ID=14018686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9115878A Granted JPS5517881A (en) | 1978-07-25 | 1978-07-25 | Magnetic recording medium and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5517881A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175308U (en) * | 1982-05-11 | 1983-11-24 | バブコツク日立株式会社 | Boiler water supply control device |
| JPS5994231A (en) * | 1982-11-22 | 1984-05-30 | Fuji Photo Film Co Ltd | Magnetic recording medium |
| CN102358826B (en) * | 2011-08-19 | 2013-08-07 | 湖南皓志新材料股份有限公司 | A kind of preparation method of aluminum-doped zirconia composite polishing powder |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5361310A (en) * | 1976-11-12 | 1978-06-01 | Matsushita Electric Ind Co Ltd | Production of magnetic recording medium |
-
1978
- 1978-07-25 JP JP9115878A patent/JPS5517881A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5517881A (en) | 1980-02-07 |
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