JPS6422039A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6422039A
JPS6422039A JP62178498A JP17849887A JPS6422039A JP S6422039 A JPS6422039 A JP S6422039A JP 62178498 A JP62178498 A JP 62178498A JP 17849887 A JP17849887 A JP 17849887A JP S6422039 A JPS6422039 A JP S6422039A
Authority
JP
Japan
Prior art keywords
insulating film
inter
onto
layer
layer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178498A
Other languages
Japanese (ja)
Inventor
Masato Suzuki
Yoshihiko Yasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62178498A priority Critical patent/JPS6422039A/en
Publication of JPS6422039A publication Critical patent/JPS6422039A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent cracks from reaching a substrate by forming a stress relaxation member onto an inter-layer insulating film, shaping a second inter- layer insulating film onto the stress relaxation member and forming a bonding pad onto the second inter-layer insulating film. CONSTITUTION:A field insulating film (such as silicon oxide) 11 is shaped onto a substrate 10, and a stress relaxation member 12 consisting of a metallic layer such as aluminum is formed onto the field insulating film 11. A bonding pad 3 and a second layer wiring 14 are shaped onto the stress relaxation member 12 through an inter-layer insulating film (such as silicon oxide film) 13. Accordingly, even when a crack is generated in the inter-layer insulating film (an oxide film) 13 under the bonding pad 3 and the inter-layer insulating film 13 is moved by a temperature cycle or the curing stress of a sealing resin material such as a resin, the stress relaxation member 12 having plasticity is shaped as the lower layer of the in ter-layer insulating film 13, thus relaxing the transmission of said crack, then preventing the spread of the crack.
JP62178498A 1987-07-17 1987-07-17 Semiconductor device Pending JPS6422039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178498A JPS6422039A (en) 1987-07-17 1987-07-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178498A JPS6422039A (en) 1987-07-17 1987-07-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6422039A true JPS6422039A (en) 1989-01-25

Family

ID=16049509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178498A Pending JPS6422039A (en) 1987-07-17 1987-07-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6422039A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253337A (en) * 1991-01-28 1992-09-09 Mitsubishi Electric Corp semiconductor equipment
JP2008505506A (en) * 2004-07-08 2008-02-21 スパンジョン・リミテッド・ライアビリティ・カンパニー Connection pad structure for copper coating with improved reliability and manufacturing method thereof
JP2008066760A (en) * 2007-11-27 2008-03-21 Seiko Epson Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253337A (en) * 1991-01-28 1992-09-09 Mitsubishi Electric Corp semiconductor equipment
JP2008505506A (en) * 2004-07-08 2008-02-21 スパンジョン・リミテッド・ライアビリティ・カンパニー Connection pad structure for copper coating with improved reliability and manufacturing method thereof
JP2008066760A (en) * 2007-11-27 2008-03-21 Seiko Epson Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS56150830A (en) Semiconductor device
DE3574080D1 (en) Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same
JPS5623759A (en) Resin-sealed semiconductor device and manufacture thereof
JPS6447052A (en) Semiconductor device and manufacture thereof
EP0354056A3 (en) Coated electric devices and methods of manufacturing the same
GB1214200A (en) Improvements in or relating to semiconductor devices
JPS6422039A (en) Semiconductor device
JPS6418248A (en) Manufacture of semiconductor device
KR850002668A (en) Semiconductor device and manufacturing method thereof
JPS5522863A (en) Manufacturing method for semiconductor device
JPS57115850A (en) Chip carrier for semiconductor ic
JPS57207353A (en) Semiconductor integrated circuit
JPS622778Y2 (en)
JPS54975A (en) Semiconductor device
JPS5796542A (en) Semiconductor device
JPS6447055A (en) Manufacture of semiconductor device
JPS55160449A (en) Semiconductor device
JPS5230188A (en) Process for producing smiconductor device
JPS6072250A (en) Resin-sealed type semiconductor device
JPS6473650A (en) Semiconductor device
JPS6481236A (en) Semiconductor integrated circuit device
JPS63193535A (en) Manufacture of hybrid integrated circuit
JPS5642348A (en) Semiconductor device
JPS6482652A (en) Manufacture of semiconductor device
JPS5624956A (en) Resin-sealed semiconductor device