JPS642323A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS642323A
JPS642323A JP15801187A JP15801187A JPS642323A JP S642323 A JPS642323 A JP S642323A JP 15801187 A JP15801187 A JP 15801187A JP 15801187 A JP15801187 A JP 15801187A JP S642323 A JPS642323 A JP S642323A
Authority
JP
Japan
Prior art keywords
film
insulating film
etched
stepping
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15801187A
Other languages
Japanese (ja)
Other versions
JPH012323A (en
Inventor
Yoshiyuki Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15801187A priority Critical patent/JPS642323A/en
Publication of JPH012323A publication Critical patent/JPH012323A/en
Publication of JPS642323A publication Critical patent/JPS642323A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To flatten the surface of an etched insulating film even when a small stepping is generated on the surface after a dummy film has been coated by a method wherein the stepping on the surface of a dummy film for flattening is alleviated by the etching conducted on the exposed insulating film in the intermediate process.
CONSTITUTION: A wiring 2 is formed on a silicon substrate 1, and an insulating film 3 is formed thereon. A stepping (h) caused by the presence of a conductive film 2 remains on the surface of the positive type photoresist film 4 coated on the insulating film 3. Then, using reactive ions 5, dry etching is conducted in the degree that the surface of the raised part 31 of the insulating film 3 over the wiring is etched a little. At this time, as the etching is conducted on the films 3 and 4 at almost equal speed, the stepping (h) is left between the surface of the insulating film 31 and the resist film 4. Then, only the exposed film 31, which is a little higher than the film 4, is etched and the height of the plane surface is made equal. Then, the films 3 and 4 are etched at the equal etching speed, and the dry etching is stopped at the point where the film 4 is removed.
COPYRIGHT: (C)1989,JPO&Japio
JP15801187A 1987-06-25 1987-06-25 Manufacture of semiconductor device Pending JPS642323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15801187A JPS642323A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15801187A JPS642323A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPH012323A JPH012323A (en) 1989-01-06
JPS642323A true JPS642323A (en) 1989-01-06

Family

ID=15662313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15801187A Pending JPS642323A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS642323A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155999A (en) * 1990-05-18 1992-10-20 Nissan Motor Co., Ltd. Intake system for internal combustion engine equipped with supercharger

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155999A (en) * 1990-05-18 1992-10-20 Nissan Motor Co., Ltd. Intake system for internal combustion engine equipped with supercharger

Similar Documents

Publication Publication Date Title
JPS57154855A (en) Manufacture of semiconductor device
JPS642323A (en) Manufacture of semiconductor device
CA2006175A1 (en) Method of forming patterned silicone rubber layer
JPS5629326A (en) Manufacture of semiconductor device
JPS54162490A (en) Manufacture of semiconductor device
JPS5536927A (en) Manufacturing of semiconductor device
JPS5527662A (en) Method of manufacturing semiconductor device
JPS5550642A (en) Preparation of semiconductor device
JPS538082A (en) Production of semiconductor device
JPS5546582A (en) Method of fabricating semiconductor device
JPS5243372A (en) Process for production of semiconductor
JPS6450548A (en) Manufacture of semiconductor device
JPS6419728A (en) Manufacture of semiconductor device
JPS6415951A (en) Manufacture of semiconductor device
JPS5254378A (en) Production of semiconductor device
JPS5267985A (en) Manufacturing process of semiconductor unit
JPS5790940A (en) Manufacture of semiconductor device
JPS52125276A (en) Preparation of semiconductor integrated circuit device
JPS5548950A (en) Manufacturing of semiconductor device
JPS5788732A (en) Preparation of semiconductor device
JPS5516467A (en) Method of patterning of insulating inorganic film
JPS5536926A (en) Manufacturing of semiconductor device
JPS5258476A (en) Method and device for etching
JPS6450560A (en) Manufacture of semiconductor device
JPS51147963A (en) Method of manufacturing a semiconductor device