JPS6424085A - Ceramic thin film structure and process for forming the structure - Google Patents
Ceramic thin film structure and process for forming the structureInfo
- Publication number
- JPS6424085A JPS6424085A JP17963487A JP17963487A JPS6424085A JP S6424085 A JPS6424085 A JP S6424085A JP 17963487 A JP17963487 A JP 17963487A JP 17963487 A JP17963487 A JP 17963487A JP S6424085 A JPS6424085 A JP S6424085A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ceramic thin
- base plate
- compsn
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To form a ceramic thin film structure having high uniformity in the quality of the film by interposing an intermediate layer between a base plate and a ceramic thin film having a compsn. different from the compsn. of the base plate. CONSTITUTION:A ceramic thin film structure is formed by interposing an intermediate layer consisting of one or plural layers between a base plate and a ceramic thin film consisting of atoms or compsn. different from those of the base plate. In this case, a base plate comprising a single crystal of Si, Al, etc., is preferred as the base plate, which is pretreated by several kinds of washing, etc. The intermediate layer has at least one thin film layer having substantially same compsn. as the base plate, and the thickness is regulated to <=about 1,000Angstrom . In some cases, the intermediate layer may be constituted of plural layers comprising alternate ceramic thin film layers which are formed finally. Preferred ceramic thin film is, for example, an oxide or fluoride ceramic thin film having perovskite structure. By this constitution, an improved ceramic thin film useful as dielectric material having high performance is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17963487A JPS6424085A (en) | 1987-07-17 | 1987-07-17 | Ceramic thin film structure and process for forming the structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17963487A JPS6424085A (en) | 1987-07-17 | 1987-07-17 | Ceramic thin film structure and process for forming the structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424085A true JPS6424085A (en) | 1989-01-26 |
Family
ID=16069194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17963487A Pending JPS6424085A (en) | 1987-07-17 | 1987-07-17 | Ceramic thin film structure and process for forming the structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424085A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
-
1987
- 1987-07-17 JP JP17963487A patent/JPS6424085A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
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