JPS6429821A - Thin film field effect type transistor element array and its production - Google Patents

Thin film field effect type transistor element array and its production

Info

Publication number
JPS6429821A
JPS6429821A JP62185924A JP18592487A JPS6429821A JP S6429821 A JPS6429821 A JP S6429821A JP 62185924 A JP62185924 A JP 62185924A JP 18592487 A JP18592487 A JP 18592487A JP S6429821 A JPS6429821 A JP S6429821A
Authority
JP
Japan
Prior art keywords
electrode
line
film
drain
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62185924A
Other languages
Japanese (ja)
Inventor
Hiroyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62185924A priority Critical patent/JPS6429821A/en
Publication of JPS6429821A publication Critical patent/JPS6429821A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To decreases the masks to be used and to simplify stages by laminating a transparent conductive film as a drain electrode line and the laminated films consisting of a 1st metallic film, semiconductor film, insulating film and 2nd metallic film having an island shape on the transparent conductive film. CONSTITUTION:The drain electrode line 17, a display electrode 15 and a source electrode drawn out of the electrode 15 are formed of ITO which is the transparent conductive film on an insulating substrate 11. A gate line 22 is formed to intersect with the drain line 17 and the source electrode. This gate line is made into the three-layered structure consisting successively of I-type amorphous silicon, silicon nitride and aluminum. The island 21 consisting of the laminated films of chromium, N-type amorphous silicon, I-type amorphous silicon, silicon nitride, and aluminum is formed on the drain line 17. The unnecessary parts of the high-concn. doped N-type semiconductor for ohmic formation are also etched, but the metal on the display electrode is exposed and, therefore, this metal is etched. Two sheets of the masks to be used is thereby necessitated and the wiring resistance of the drain electrode is decreased by about one digit.
JP62185924A 1987-07-24 1987-07-24 Thin film field effect type transistor element array and its production Pending JPS6429821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62185924A JPS6429821A (en) 1987-07-24 1987-07-24 Thin film field effect type transistor element array and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62185924A JPS6429821A (en) 1987-07-24 1987-07-24 Thin film field effect type transistor element array and its production

Publications (1)

Publication Number Publication Date
JPS6429821A true JPS6429821A (en) 1989-01-31

Family

ID=16179260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62185924A Pending JPS6429821A (en) 1987-07-24 1987-07-24 Thin film field effect type transistor element array and its production

Country Status (1)

Country Link
JP (1) JPS6429821A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6435422A (en) * 1987-07-30 1989-02-06 Sharp Kk Thin film transistor array
US5728592A (en) * 1992-10-09 1998-03-17 Fujitsu Ltd. Method for fabricating a thin film transistor matrix device
JP2002033331A (en) * 2000-05-12 2002-01-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
JP2007500452A (en) * 2003-05-20 2007-01-11 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Field effect transistor configuration and method of manufacturing field effect transistor configuration
KR100685945B1 (en) * 2000-12-29 2007-02-23 엘지.필립스 엘시디 주식회사 LCD and its manufacturing method
US8519049B2 (en) 2005-09-27 2013-08-27 Cemedine Co., Ltd. Curable composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179486A (en) * 1985-02-04 1986-08-12 三菱電機株式会社 semiconductor equipment
JPS62500745A (en) * 1984-10-17 1987-03-26 レタ・フランセ・ルプレザント・パ・ル・ミニストル・デ・ペ・テ・テ・（セントル・ナシヨナル・デチユ−ド・デ・テレコミユニカシオン） Method of manufacturing active matrix display screen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500745A (en) * 1984-10-17 1987-03-26 レタ・フランセ・ルプレザント・パ・ル・ミニストル・デ・ペ・テ・テ・（セントル・ナシヨナル・デチユ−ド・デ・テレコミユニカシオン） Method of manufacturing active matrix display screen
JPS61179486A (en) * 1985-02-04 1986-08-12 三菱電機株式会社 semiconductor equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6435422A (en) * 1987-07-30 1989-02-06 Sharp Kk Thin film transistor array
US5728592A (en) * 1992-10-09 1998-03-17 Fujitsu Ltd. Method for fabricating a thin film transistor matrix device
JP2002033331A (en) * 2000-05-12 2002-01-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
KR100685945B1 (en) * 2000-12-29 2007-02-23 엘지.필립스 엘시디 주식회사 LCD and its manufacturing method
JP2007500452A (en) * 2003-05-20 2007-01-11 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Field effect transistor configuration and method of manufacturing field effect transistor configuration
US8519049B2 (en) 2005-09-27 2013-08-27 Cemedine Co., Ltd. Curable composition

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