JPS6440817A - Active matrix substrate - Google Patents

Abstract

PURPOSE:To improve the step coverage characteristic of electrodes so as to prevent disconnection and to improve productivity and yield by sloping the end faces of an insulating film in the conductive junctures between the electrodes of active elements and display picture elements. CONSTITUTION:Display electrodes 2 consisting of ITO and gate electrodes 3 consisting of Cr are formed on an insulating substrate 1. A silicon oxynitride film is deposited thereon to form the gate insulating film 4 and a non-doped a-Si film is deposited thereon to form a semiconductor film 5. This semiconductor film and an impurity added semiconductor 6 of P-doped a-Si formed to an island shape. The end faces of the gate insulating film 4 are tapered at the time of forming apertures to the parts on the picture element electrodes of said film. Namely, a photoresist is coated on the film 4 and is patterned to the prescribed shapes, then the resist is dry etched to copy the tapered shape of the resist end face to the end face of the film 4. Cr and Al are then deposited by evaporation to form source electrodes 7 and drain electrodes 8. The film 6 is etched away.