JPS6449276A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6449276A
JPS6449276A JP62205135A JP20513587A JPS6449276A JP S6449276 A JPS6449276 A JP S6449276A JP 62205135 A JP62205135 A JP 62205135A JP 20513587 A JP20513587 A JP 20513587A JP S6449276 A JPS6449276 A JP S6449276A
Authority
JP
Japan
Prior art keywords
layer
carrier supply
graded
conductivity type
supply layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62205135A
Other languages
Japanese (ja)
Other versions
JPH0787246B2 (en
Inventor
Masahiko Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62205135A priority Critical patent/JPH0787246B2/en
Publication of JPS6449276A publication Critical patent/JPS6449276A/en
Publication of JPH0787246B2 publication Critical patent/JPH0787246B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To completely eliminate a DX-center-related problem in a carrier supply layer by providing a selectively doped hetero-structure where InGaP is used in the carrier supply layer, GaAs is used in a cap layer and AlGaAs is used in a graded layer bonding these two. CONSTITUTION:An i-type GaAs channel layer 5, an In0.48Ga0.52P carrier supply layer 4' of the conductivity type, an AlxGa1-xAs graded layer 3 of the one conductivity type and a GaAs cap layer 2 of the one conductivity type which are laminated in succession are provided. By adopting this means, a problem related to a DX center is not caused at all in the carrier supply layer; it is extremely easy to control a composition when the graded layer bonding the carrier supply layer and the cap layer is to be formed; because this graded layer has been formed, a source resistance value Rs can be reduced.
JP62205135A 1987-08-20 1987-08-20 Semiconductor device Expired - Fee Related JPH0787246B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205135A JPH0787246B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205135A JPH0787246B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6449276A true JPS6449276A (en) 1989-02-23
JPH0787246B2 JPH0787246B2 (en) 1995-09-20

Family

ID=16502002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205135A Expired - Fee Related JPH0787246B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0787246B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549928A (en) * 2020-04-23 2021-10-26 成都飞机工业（集团）有限责任公司 Aluminum alloy pipe cleaning agent and process method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124771A (en) * 1982-12-30 1984-07-18 Fujitsu Ltd Compound semiconductor device
JPS6086872A (en) * 1983-10-19 1985-05-16 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124771A (en) * 1982-12-30 1984-07-18 Fujitsu Ltd Compound semiconductor device
JPS6086872A (en) * 1983-10-19 1985-05-16 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549928A (en) * 2020-04-23 2021-10-26 成都飞机工业（集团）有限责任公司 Aluminum alloy pipe cleaning agent and process method

Also Published As

Publication number Publication date
JPH0787246B2 (en) 1995-09-20

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees