JPS6450570A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6450570A
JPS6450570A JP62208455A JP20845587A JPS6450570A JP S6450570 A JPS6450570 A JP S6450570A JP 62208455 A JP62208455 A JP 62208455A JP 20845587 A JP20845587 A JP 20845587A JP S6450570 A JPS6450570 A JP S6450570A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor device
heterojunction
energy gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62208455A
Other languages
Japanese (ja)
Inventor
Masahiko Sasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62208455A priority Critical patent/JPS6450570A/en
Publication of JPS6450570A publication Critical patent/JPS6450570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate the growth of crystal as well as to make the high-speed operation of the title semiconductor device possible by a method wherein a heterojunction, formed by a channel layer consisting of the first semiconductor layer and the second semiconductor layer, having the energy gap and the lattice constant larger than those of the first semiconductor, are provided. CONSTITUTION:The heterojunction, formed by the channel layer 3 consisting of the first semiconductor layer, and the second semiconductor layer 4, having the energy gap and the grating constant larger than those of the first semiconductor, is provided on the title semiconductor device. for example, AlAsSb layers 2B1-2Bn, as a superlattice buffer, and InGaAs layers 2W1-2Wn-1 are alternately grown 20 cycles on a semiinsulative InP substrate 1, and an InxGa1-xAs (x < 0.53) channel layer 3, an n-AlAsySb1-y (y<0.46) electron supply layer 4, and an n-InGaAs contact layer 5 are successively grown on a semiinsulative InP substrate 1. Then, a gate electrode G consisting of an Al layer or a Ti/Pt/Al layer is formed on the electron supply layer 4 located in a recess, the source and drain electrodes S and D consisting of an AuGe/Au layer is formed on the contact layer 5, and an HEMT is constituted.
JP62208455A 1987-08-21 1987-08-21 Semiconductor device Pending JPS6450570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208455A JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208455A JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450570A true JPS6450570A (en) 1989-02-27

Family

ID=16556476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208455A Pending JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450570A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148245A (en) * 1989-07-12 1992-09-15 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
US5223724A (en) * 1990-07-31 1993-06-29 At & T Bell Laboratories Multiple channel high electron mobility transistor
US5266506A (en) * 1990-07-31 1993-11-30 At&T Bell Laboratories Method of making substantially linear field-effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
JP2011166138A (en) * 2010-02-10 2011-08-25 Taiwan Semiconductor Manufacturing Co Ltd Density of state engineered field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148245A (en) * 1989-07-12 1992-09-15 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
US5223724A (en) * 1990-07-31 1993-06-29 At & T Bell Laboratories Multiple channel high electron mobility transistor
US5266506A (en) * 1990-07-31 1993-11-30 At&T Bell Laboratories Method of making substantially linear field-effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
JP2011166138A (en) * 2010-02-10 2011-08-25 Taiwan Semiconductor Manufacturing Co Ltd Density of state engineered field effect transistor

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