JPS6450573A - Manufacture of semiconductor radiation-ray detection element - Google Patents

Abstract

PURPOSE:To obtain the element having a low leak current and excellent reproducibility by a method wherein, using the gas containing hydrogen gas, an amorphous semiconductor layer is deposited on the surface of a single crystal semiconductor substrate without exposing said surface to the plasma generated by the electric discharge after a hydrogen treatment, in which the surface of the single crystal semiconductor substrate is exposed to the plasma generated by the above-mentioned gas, has been conducted. CONSTITUTION:When an amorphous semiconductor layer 2 is going to be formed on a single crystal semiconductor substrate 1 using a CVD method, a hydrogen treatment, in which the surface of the single crystal semiconductor substrate 1 will be exposed to the plasma generated by the electric discharge of the gas, is conducted using the introduction gas at least containing hydrogen gas before the deposition of the amorphous semiconductor layer 2. Subsequently, an amorphous semiconductor layer 2 is deposited on the single crystal semiconductor substrate 1 without exposing the substrate 1 to the surrounding air. For example, after the single crystal Si substrate 1 has been set in a high frequency plasma CVD device, hydrogen gas is introduced, hydrogen plasma is generated, and a hydrogen treatment is conducted. Then, the introduction gas is charged to SiH4 and CH4, and amorphous SiC of 300mm is deposited as the amorphous semiconductor layer 2. Subsequently, a metal electrode 3 and the rear surface metal electrode 4 are formed by vapor-depositing Al and conducting patterning.