JPS6463832A - Semiconductor pressure transducer and manufacture thereof - Google Patents

Semiconductor pressure transducer and manufacture thereof

Info

Publication number
JPS6463832A
JPS6463832A JP22017387A JP22017387A JPS6463832A JP S6463832 A JPS6463832 A JP S6463832A JP 22017387 A JP22017387 A JP 22017387A JP 22017387 A JP22017387 A JP 22017387A JP S6463832 A JPS6463832 A JP S6463832A
Authority
JP
Japan
Prior art keywords
bonded
base
base stage
seat
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22017387A
Other languages
Japanese (ja)
Inventor
Masayuki Ozawa
Kiyoshi Kanai
Hisanobu Okamura
Takashi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22017387A priority Critical patent/JPS6463832A/en
Publication of JPS6463832A publication Critical patent/JPS6463832A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To secure airtightness and to enhance accuracy, by bonding an insulator seat and a metal base stage through Au or Sn solder at a suitable applied voltage in heating at specified temperature. CONSTITUTION:A diffused strain gage is bonded on the upper surface of a silicon diaphragm 1. An insulator seat 4 comprising Pylex glass is bonded to the lower surface. A metal base stage 7 is bonded to the opposite surface of the seat 4 with respect to the surface, to which the silicon diaphragm 1 is bonded, through an Au-Su based high-melting-point solder layer 6 under the application of a voltage of 500-3,000V in heating at 150-350 deg.C. The base stage 7 is bonded to a base 10. A lead pin 8 for leading out a signal is embedded in the base 10 with a hermetic sealing material 9. A can 13 is bonded and fixed on the base 10.
JP22017387A 1987-09-04 1987-09-04 Semiconductor pressure transducer and manufacture thereof Pending JPS6463832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22017387A JPS6463832A (en) 1987-09-04 1987-09-04 Semiconductor pressure transducer and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22017387A JPS6463832A (en) 1987-09-04 1987-09-04 Semiconductor pressure transducer and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6463832A true JPS6463832A (en) 1989-03-09

Family

ID=16747029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22017387A Pending JPS6463832A (en) 1987-09-04 1987-09-04 Semiconductor pressure transducer and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6463832A (en)

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