JPS6472523A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6472523A JPS6472523A JP22817787A JP22817787A JPS6472523A JP S6472523 A JPS6472523 A JP S6472523A JP 22817787 A JP22817787 A JP 22817787A JP 22817787 A JP22817787 A JP 22817787A JP S6472523 A JPS6472523 A JP S6472523A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- ion
- angles
- steps
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005468 ion implantation Methods 0.000 abstract 8
- 229910052796 boron Inorganic materials 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- -1 Boron ions Chemical class 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To change an ion implantation depth with one ion implantation apparatus not only with accelerating energy from said apparatus but also freely, by differentiating ion implantation angles into a wafer at one or more ion implantation steps from implantation angles in other ion implanting steps. CONSTITUTION:When a semiconductor device is manufactured in a semiconductor wafer through tow or more ion implantation steps, ion implanting angles into the semiconductor wafer in one or more ion-implantation steps are made different from ion implantation angles into a semiconductor wafer in other ion implantation steps. For example, when the channel region of an NMOS transistor is formed, a silicon oxide film 12 is formed on a P-type semiconductor silicon substrate 11 so that the film is thin on the channel and thick on the other region. Boron ions are inputted in a direction 13, which is inclined by seven degrees from the vertical direction toward the surface through the film 12. Thus a shallow boron doped channel layer 14 is formed. Then, the boron ions are inputted in the vertical direction 15 toward the silicon surface and a deep boron doped channel layer 16 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22817787A JPS6472523A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22817787A JPS6472523A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6472523A true JPS6472523A (en) | 1989-03-17 |
Family
ID=16872426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22817787A Pending JPS6472523A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6472523A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5238858A (en) * | 1988-10-31 | 1993-08-24 | Sharp Kabushiki Kaisha | Ion implantation method |
| US5436176A (en) * | 1990-03-27 | 1995-07-25 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate |
| US6835988B2 (en) | 2001-09-21 | 2004-12-28 | Renesas Technology Corp. | Semiconductor device having channel cut layers provided at different depths |
| US11830703B2 (en) | 2018-07-18 | 2023-11-28 | Sumitomo Heavy Industries Ion Technology Co, Ltd. | Ion implantation method and ion implanter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178532A (en) * | 1981-04-09 | 1982-11-02 | Ampex | Editting apparatus |
| JPS59208641A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Key entry device |
-
1987
- 1987-09-11 JP JP22817787A patent/JPS6472523A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178532A (en) * | 1981-04-09 | 1982-11-02 | Ampex | Editting apparatus |
| JPS59208641A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Key entry device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5238858A (en) * | 1988-10-31 | 1993-08-24 | Sharp Kabushiki Kaisha | Ion implantation method |
| US5436176A (en) * | 1990-03-27 | 1995-07-25 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate |
| US6835988B2 (en) | 2001-09-21 | 2004-12-28 | Renesas Technology Corp. | Semiconductor device having channel cut layers provided at different depths |
| US11830703B2 (en) | 2018-07-18 | 2023-11-28 | Sumitomo Heavy Industries Ion Technology Co, Ltd. | Ion implantation method and ion implanter |
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