JPS6472990A - Crystal growing device by molecular beam of gaseous source - Google Patents

Crystal growing device by molecular beam of gaseous source

Info

Publication number
JPS6472990A
JPS6472990A JP22875987A JP22875987A JPS6472990A JP S6472990 A JPS6472990 A JP S6472990A JP 22875987 A JP22875987 A JP 22875987A JP 22875987 A JP22875987 A JP 22875987A JP S6472990 A JPS6472990 A JP S6472990A
Authority
JP
Japan
Prior art keywords
heated
temp
molecular
introducing pipe
introduction part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22875987A
Other languages
Japanese (ja)
Inventor
Junji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22875987A priority Critical patent/JPS6472990A/en
Publication of JPS6472990A publication Critical patent/JPS6472990A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent a gas introducing pipe from being clogged and to obtain the titled high-purity crystal by constituting the titled device so that the gas introducing pipe in a molecular-beam source cell is divided into a plurality of heating zones and heated at specified temp. and a gaseous material is decomposed and radiated. CONSTITUTION:A gas introducing pipe 21 in a molecular-beam source cell 20 for radiating a molecule is divided into a plurality of heating zones and a first introduction part near to a gaseous raw material source is heated at intermediate temp. with a heater 22 made of Ta and the following second introduction part is heated at temp. lower than the first introduction part and the thermal decomposition part of a wafer 2 side is heated at the highest temp. The gaseous raw material introduced through a gas inlet 26 is decomposed, radiated and subjected to molecular-beam epitaxial growth on a heated wafer 2.
JP22875987A 1987-09-11 1987-09-11 Crystal growing device by molecular beam of gaseous source Pending JPS6472990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22875987A JPS6472990A (en) 1987-09-11 1987-09-11 Crystal growing device by molecular beam of gaseous source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22875987A JPS6472990A (en) 1987-09-11 1987-09-11 Crystal growing device by molecular beam of gaseous source

Publications (1)

Publication Number Publication Date
JPS6472990A true JPS6472990A (en) 1989-03-17

Family

ID=16881382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22875987A Pending JPS6472990A (en) 1987-09-11 1987-09-11 Crystal growing device by molecular beam of gaseous source

Country Status (1)

Country Link
JP (1) JPS6472990A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033228A (en) * 1989-05-30 1991-01-09 Fujitsu Ltd Semiconductor manufacturing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033228A (en) * 1989-05-30 1991-01-09 Fujitsu Ltd Semiconductor manufacturing apparatus

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