JPS6473745A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6473745A
JPS6473745A JP23182187A JP23182187A JPS6473745A JP S6473745 A JPS6473745 A JP S6473745A JP 23182187 A JP23182187 A JP 23182187A JP 23182187 A JP23182187 A JP 23182187A JP S6473745 A JPS6473745 A JP S6473745A
Authority
JP
Japan
Prior art keywords
interconnection
film
high temperature
semiconductor device
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23182187A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Kiyoshi Watabe
Takenori Hario
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23182187A priority Critical patent/JPS6473745A/en
Publication of JPS6473745A publication Critical patent/JPS6473745A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To protect a lower metal interconnection against a thermal shock by a method wherein a high melting metal film is formed on the lower metal interconnection. CONSTITUTION:An interlaminar insulating film 12 is formed on a semiconductor substrate 11. Next, an Al interconnection 13 is formed on the film 12. Then, a high melting metal film 14 is formed so as to prevent the interconnection 13 from being heated it high temperature. An interlaminar insulating film 15 is formed on the film 14. An Al interconnection 16 is built on the film 15. A high melting metal film 17 is formed on the interconnection 16 to prevent it from being heated at a high temperature. The semiconductor provided with a multilayer interconnection is formed in the processes as mentioned above. By these processes, a lower Al interconnection can be protected against a thermal shock. And a sputtering method performed at a high temperature can be applied, so that a multilayer interconnection used for a power source or the like of a semiconductor device high in integration and density and large in scale can be formed into a required shape.
JP23182187A 1987-09-16 1987-09-16 Semiconductor device and manufacture thereof Pending JPS6473745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23182187A JPS6473745A (en) 1987-09-16 1987-09-16 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23182187A JPS6473745A (en) 1987-09-16 1987-09-16 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6473745A true JPS6473745A (en) 1989-03-20

Family

ID=16929546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23182187A Pending JPS6473745A (en) 1987-09-16 1987-09-16 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6473745A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235753A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH04264729A (en) * 1990-10-25 1992-09-21 Hyundai Electron Ind Co Ltd Flattening and formation method of metal thin film
JPH06318590A (en) * 1993-05-10 1994-11-15 Nec Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235753A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH04264729A (en) * 1990-10-25 1992-09-21 Hyundai Electron Ind Co Ltd Flattening and formation method of metal thin film
JPH06318590A (en) * 1993-05-10 1994-11-15 Nec Corp Manufacture of semiconductor device

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