JPS6477967A - Soi type mos semiconductor device - Google Patents

Soi type mos semiconductor device

Info

Publication number
JPS6477967A
JPS6477967A JP62235739A JP23573987A JPS6477967A JP S6477967 A JPS6477967 A JP S6477967A JP 62235739 A JP62235739 A JP 62235739A JP 23573987 A JP23573987 A JP 23573987A JP S6477967 A JPS6477967 A JP S6477967A
Authority
JP
Japan
Prior art keywords
region
drain
source
layer
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62235739A
Other languages
Japanese (ja)
Inventor
Shinji Toyoyama
Katsumasa Fujii
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62235739A priority Critical patent/JPS6477967A/en
Publication of JPS6477967A publication Critical patent/JPS6477967A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enable one side high density diffusion region to impress voltage on a channel region even when a source and a drain are made to operate being shunted, by providing anti-polar high density diffusion regions opposite to a source region and a drain region in polarity in their neighborhoods respectively. CONSTITUTION:High density diffusion regions 8 and 9 are provided on a semiconductor layer 2 on a symmetrical position to the channel region 5 at a fixed distance from the boundary parts of a source region 3 and a drain region 4 respectively. Then, when source voltage is raised in order to operate a source and a drain being shunted, a depletion layer largely spreads out under the source region 3 while the depletion layer does not so much spread out under the drain layer 4 so as to able to electrically connect the channel region 5 and the high density diffusion layer 9 through the lower part of the drain layer 4.
JP62235739A 1987-09-18 1987-09-18 Soi type mos semiconductor device Pending JPS6477967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235739A JPS6477967A (en) 1987-09-18 1987-09-18 Soi type mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235739A JPS6477967A (en) 1987-09-18 1987-09-18 Soi type mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477967A true JPS6477967A (en) 1989-03-23

Family

ID=16990504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235739A Pending JPS6477967A (en) 1987-09-18 1987-09-18 Soi type mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477967A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434979A (en) * 1990-05-30 1992-02-05 Seiko Instr Inc Semiconductor device
JPH05114734A (en) * 1991-10-22 1993-05-07 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434979A (en) * 1990-05-30 1992-02-05 Seiko Instr Inc Semiconductor device
JPH05114734A (en) * 1991-10-22 1993-05-07 Mitsubishi Electric Corp Semiconductor device

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