JPS648719A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS648719A
JPS648719A JP16467187A JP16467187A JPS648719A JP S648719 A JPS648719 A JP S648719A JP 16467187 A JP16467187 A JP 16467187A JP 16467187 A JP16467187 A JP 16467187A JP S648719 A JPS648719 A JP S648719A
Authority
JP
Japan
Prior art keywords
voltage
base
signal
drive current
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16467187A
Other languages
Japanese (ja)
Inventor
Hidetaka Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16467187A priority Critical patent/JPS648719A/en
Publication of JPS648719A publication Critical patent/JPS648719A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To eliminate the limit of a load resistor and to minimize the drive current by connecting a collector and a base of a bipolar transistor(TR) to a gate and a source of an N-channel MOS TR respectively. CONSTITUTION:In switching a high voltage AC signal being an AC signal superimposed on an offset voltage. A threshold voltage of the N-channel MOS TR 2 is set in the specific range. In applying the voltage being the upper limit or over in the specified range between the collector and the emitter of the bipolar TR 1, the TR 2 is turned on. Then it is equivalent to the state of short- circuited base and emitter of the TR 1 and no negative characteristic is caused. Moreover, in setting the lower limit of a threshold voltage to a minimum voltage of a high voltage AC signal and in applying a drive current to the base of the TR 1, if the high voltage AC signal reaches the threshold voltage or below, the TR 2 is turned off and the drive current flows to the base.
JP16467187A 1987-06-30 1987-06-30 Semiconductor integrated circuit Pending JPS648719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16467187A JPS648719A (en) 1987-06-30 1987-06-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16467187A JPS648719A (en) 1987-06-30 1987-06-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS648719A true JPS648719A (en) 1989-01-12

Family

ID=15797618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16467187A Pending JPS648719A (en) 1987-06-30 1987-06-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS648719A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676846A3 (en) * 1994-04-09 1996-06-12 Telefunken Microelectron Switch made with bipolar transistor as the first switching element.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676846A3 (en) * 1994-04-09 1996-06-12 Telefunken Microelectron Switch made with bipolar transistor as the first switching element.

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