KR920703197A - 마이크로파 플라즈마발생장치 및 그것을 이용하는 다이어몬드막의 제조방법 - Google Patents

마이크로파 플라즈마발생장치 및 그것을 이용하는 다이어몬드막의 제조방법

Info

Publication number
KR920703197A
KR920703197A KR1019920701273A KR920701273A KR920703197A KR 920703197 A KR920703197 A KR 920703197A KR 1019920701273 A KR1019920701273 A KR 1019920701273A KR 920701273 A KR920701273 A KR 920701273A KR 920703197 A KR920703197 A KR 920703197A
Authority
KR
South Korea
Prior art keywords
microwave
plasma
irradiation means
discharge space
timing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019920701273A
Other languages
English (en)
Korean (ko)
Inventor
료헤이 아타타니
토시오 이소자끼
나리유끼 하야시
Original Assignee
홍고오 므쯔미
이데미쯔세끼유가가꾸 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 홍고오 므쯔미, 이데미쯔세끼유가가꾸 가부시기가이샤 filed Critical 홍고오 므쯔미
Publication of KR920703197A publication Critical patent/KR920703197A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/12—Processes employing electromagnetic waves
    • B01J2219/1203—Incoherent waves
    • B01J2219/1206—Microwaves
    • B01J2219/1287—Features relating to the microwave source
    • B01J2219/129—Arrangements thereof
    • B01J2219/1296—Multiple sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Plasma Technology (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1019920701273A 1990-10-01 1991-10-01 마이크로파 플라즈마발생장치 및 그것을 이용하는 다이어몬드막의 제조방법 Abandoned KR920703197A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-263447 1990-10-01
JP2263447A JPH04144992A (ja) 1990-10-01 1990-10-01 マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法
PCT/JP1991/001318 WO1992005867A1 (en) 1990-10-01 1991-10-01 Device for generating microwave plasma and method of making diamond film utilizing said device

Publications (1)

Publication Number Publication Date
KR920703197A true KR920703197A (ko) 1992-12-17

Family

ID=17389640

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920701273A Abandoned KR920703197A (ko) 1990-10-01 1991-10-01 마이크로파 플라즈마발생장치 및 그것을 이용하는 다이어몬드막의 제조방법

Country Status (6)

Country Link
EP (1) EP0503082A4 (2)
JP (1) JPH04144992A (2)
KR (1) KR920703197A (2)
CA (1) CA2069942A1 (2)
TW (1) TW208108B (2)
WO (1) WO1992005867A1 (2)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2693619B1 (fr) * 1992-07-08 1994-10-07 Valeo Vision Dispositif pour le dépôt de polymère par l'intermédiaire d'un plasma excité par micro-ondes.
DE4340652C2 (de) * 1993-11-30 2003-10-16 Widia Gmbh Verbundwerkstoff und Verfahren zu seiner Herstellung
US6087778A (en) * 1996-06-28 2000-07-11 Lam Research Corporation Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna
DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
US6039834A (en) * 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
DE19740792A1 (de) * 1997-09-17 1999-04-01 Bosch Gmbh Robert Verfahren zur Erzeugung eines Plasmas durch Einstrahlung von Mikrowellen
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
WO2003096749A1 (en) * 2002-05-08 2003-11-20 Dana Corporation Plasma-assisted heat treatment
DE102008062619B8 (de) * 2008-12-10 2012-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrowellenplasmaquelle und Verfahren zur Bildung eines linear langgestreckten Plasmas beiAtmosphärendruckbedingungen
DE202010015818U1 (de) * 2010-08-27 2011-02-17 Hq-Dielectrics Gmbh Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
DE102010035593B4 (de) * 2010-08-27 2014-07-10 Hq-Dielectrics Gmbh Verfahren und Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
DE102011111884B3 (de) * 2011-08-31 2012-08-30 Martin Weisgerber Verfahren und Vorrichtung zur Erzeugung von thermodynamisch kaltem Mikrowellenplasma
JP5955520B2 (ja) * 2011-09-09 2016-07-20 東京エレクトロン株式会社 マイクロ波処理装置およびその制御方法
DE102012200878B4 (de) * 2012-01-23 2014-11-20 Forschungsverbund Berlin E.V. Verfahren und Vorrichtung zum Erzeugen von Plasmapulsen
JP6037281B2 (ja) * 2012-03-29 2016-12-07 本田技研工業株式会社 カーボンナノチューブ合成装置
GB201410703D0 (en) * 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
JP6775771B2 (ja) * 2015-09-10 2020-10-28 国立研究開発法人産業技術総合研究所 マイクロ波プラズマｃｖｄ装置及びそれを用いたダイヤモンドの合成方法
US10692742B2 (en) 2015-11-05 2020-06-23 Industrial Technology Research Institute Operating method of microwave heating device and microwave annealing process using the same
CN112281136B (zh) * 2020-10-27 2023-08-18 曾一 一种制备超纳米金刚石薄膜的方法
CN113942996B (zh) * 2021-11-06 2023-09-19 云南华谱量子材料有限公司 一种无污染生物质微波无氧碳化生产碳材料的方法及装置
WO2023238826A1 (ja) 2022-06-08 2023-12-14 国立研究開発法人産業技術総合研究所 マイクロ波プラズマｃｖｄ装置
CH720592A1 (de) * 2023-03-08 2024-09-13 Microwave Solutions Gmbh System und verfahren zur behandlung der oberfläche einer komponente auf kohlenstoffbasis
CN117457465A (zh) * 2023-10-30 2024-01-26 上海铂世光半导体科技有限公司 基于多个微波源叠加的等离子体反应装置及加强方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054996A (ja) * 1983-09-07 1985-03-29 Natl Inst For Res In Inorg Mater ダイヤモンドの合成法
JPH0666268B2 (ja) * 1986-06-18 1994-08-24 日本電気株式会社 マイクロ波プラズマｃｖｄ装置
JP2792558B2 (ja) * 1987-12-07 1998-09-03 株式会社日立製作所 表面処理装置および表面処理方法
DE3830249A1 (de) * 1988-09-06 1990-03-15 Schott Glaswerke Plasmaverfahren zum beschichten ebener substrate
JP2906239B2 (ja) * 1988-11-07 1999-06-14 富士通株式会社 プラズマ化学気相成長法
JPH03111577A (ja) * 1989-09-26 1991-05-13 Idemitsu Petrochem Co Ltd マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法

Also Published As

Publication number Publication date
EP0503082A4 (en) 1993-02-03
WO1992005867A1 (en) 1992-04-16
JPH04144992A (ja) 1992-05-19
EP0503082A1 (en) 1992-09-16
CA2069942A1 (en) 1992-04-02
TW208108B (2) 1993-06-21

Similar Documents

Publication Publication Date Title
KR920703197A (ko) 마이크로파 플라즈마발생장치 및 그것을 이용하는 다이어몬드막의 제조방법
KR960010157A (ko) 플라즈마가공방법 및 플라즈마발생장치
US6647088B1 (en) Production of a dense mist of micrometric droplets in particular for extreme UV lithography
KR900013595A (ko) 플라즈마 에칭방법 및 장치
IE841438L (en) Etching and plating processes
ATE158384T1 (de) Elektronzyklotronresonanz-ionentriebwerk
KR0137124B1 (en) Pattern forming method
ATE40626T1 (de) Einrichtung zum erzeugen von kurzdauernden, intensiven impulsen elektromagnetischer strahlung im wellenlaengenbereich unter etwa 100 nm.
EP1179381A3 (en) Surface treatment apparatus
ATE107153T1 (de) Vorrichtung zum aussenden von laserstrahlen.
KR970068751A (ko) 마이크로파 플라즈마 처리 장치 및 방법(Microwave Plasma Processing Apparatus and Method Therefor)
KR970013540A (ko) 배선기판의 레이저가공방법, 배선기판의 레이저가공장치 및 배선기판 가공용의 탄산가스 레이저발진기
FR2797372B1 (fr) Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma
KR970030240A (ko) 중성 입자 비임 조사 장치
EP0212924A3 (en) Plasma processing apparatus
IL51282A (en) Method of feedback control of electron beam lasers
JPS6471045A (en) Method and apparatus for creating electrons by utilizing electric field coupling and photoelectric effect
JPS6459750A (en) Defect inspection and correction device for electron beam pattern
KR100273959B1 (ko) 가스레이저 가공기
JP2781712B2 (ja) プラズマ処理方法
KR960042845A (ko) 연속발진 레이저를 이용한 필드 에미터의 표면개질 시스템
KR970063436A (ko) 그리드형 가스 분사를 이용한 유도결합 플라즈마 발생장치
DE69630746D1 (de) Festkörpervorrichtung zur Erzeugung elektromagnetischer Terahertzwellen
JPH04356384A (ja) レーザー照射装置
JPS57177922A (en) Bolt

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19920530

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19920530

Comment text: Request for Examination of Application

PG1501 Laying open of application
PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested