KR970053552A - 금속배선막 형성방법 - Google Patents

금속배선막 형성방법 Download PDF

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Publication number
KR970053552A
KR970053552A KR1019950062168A KR19950062168A KR970053552A KR 970053552 A KR970053552 A KR 970053552A KR 1019950062168 A KR1019950062168 A KR 1019950062168A KR 19950062168 A KR19950062168 A KR 19950062168A KR 970053552 A KR970053552 A KR 970053552A
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KR
South Korea
Prior art keywords
metal wiring
tungsten nitride
wiring film
forming
film formation
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Application number
KR1019950062168A
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English (en)
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KR0170719B1 (ko
Inventor
박병률
이상인
하정민
고대홍
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950062168A priority Critical patent/KR0170719B1/ko
Publication of KR970053552A publication Critical patent/KR970053552A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 금속배선막 형성방법에 관한 것으로, 장벽금속으로서 텅스텐 질화박막을 사용하는 금속배선막 형성방법에 있어서 텅스텐 질화박막의 형성을 위한 반응가스 중에서 질소 공급원으로 (CH3)HNNH2혹은 (CH3)3CH2N 가스를 사용하는 것을 특징으로 한다. 따라서 본 발명은 500℃ 이하의 증착온도에서도 F원자가 적게 함유된 우수한 텅스텐 질화박막을 얻을 수 있었다.

Description

금속배선막 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 장벽금속으로서 텅스텐 질화박막을 사용하는 금속배선막 형성방법에 있어서,상기 텅스텐 질화박막의 형성을 위한 반응가스 중에서 질소 공급원으로 (CH3)HNNH2혹은 (CH3)3CH2N 가스를 사용하는 것을 특징으로 하는 금속배선막 형성방법.
  2. 제1항에 있어서, 상기 텅스텐 질화박막을 CVD법 혹은 PECVD법으로 이루어지는 것을 특징으로 하는 금속배선막 형성방법.
  3. (CH3)HNNH2/WF6의 압력 분압조성비를 0.1∼100범위로 하고, 증착온도는 200℃∼700℃ 범위로 하며, 반응기내의 증착압력은 0.05∼1.0 Torr 범위내에서 CVD법을 이용하여 텅스텐 질화박막을 형성시키는 것을 특징으로 하는 금속배선막 형성방법.
  4. 제3항에 있어서, 상기 반응기 내부에 환원가스로 NH3와 H2를 넣는 것을 특징으로 하는 금속배선막 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950062168A 1995-12-28 1995-12-28 금속배선막 형성방법 Expired - Fee Related KR0170719B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950062168A KR0170719B1 (ko) 1995-12-28 1995-12-28 금속배선막 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950062168A KR0170719B1 (ko) 1995-12-28 1995-12-28 금속배선막 형성방법

Publications (2)

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KR970053552A true KR970053552A (ko) 1997-07-31
KR0170719B1 KR0170719B1 (ko) 1999-03-30

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KR1019950062168A Expired - Fee Related KR0170719B1 (ko) 1995-12-28 1995-12-28 금속배선막 형성방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100586549B1 (ko) 2004-12-02 2006-06-08 주식회사 하이닉스반도체 포토 마스크 및 이를 이용한 패턴 제조 방법

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