KR970054582A - 제2고조파 발생소자 - Google Patents

제2고조파 발생소자 Download PDF

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Publication number
KR970054582A
KR970054582A KR1019950069312A KR19950069312A KR970054582A KR 970054582 A KR970054582 A KR 970054582A KR 1019950069312 A KR1019950069312 A KR 1019950069312A KR 19950069312 A KR19950069312 A KR 19950069312A KR 970054582 A KR970054582 A KR 970054582A
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KR
South Korea
Prior art keywords
harmonic generating
generating element
substrate
harmonic
present
Prior art date
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Application number
KR1019950069312A
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English (en)
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KR0166907B1 (ko
Inventor
진용성
윤두협
Original Assignee
구자홍
Lg 전자주식회사
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Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019950069312A priority Critical patent/KR0166907B1/ko
Publication of KR970054582A publication Critical patent/KR970054582A/ko
Application granted granted Critical
Publication of KR0166907B1 publication Critical patent/KR0166907B1/ko
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Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Optical Head (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

본 발명은 제2고조파 발생소자에 관한 것으로, 제2고조파 발생효율을 증가시킴으로써 고밀도 초소형 광픽업장치의 광원으로 사용이 적합하도록 한 것이다.
본 발명에 따른 제2고조파 발생소자는 분극반전층이 형성된 기판위의 광도파로위에 굴절율이 큰 클래드층이 형성된 구성으로 되어 있다.

Description

제2고조파 발생소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명에 따른 제2고조파 발생소자의 개략도.

Claims (2)

  1. 분극반전층이 형성된 기판위의 광도파로위에 기판보다 굴절율이 큰 클래드층이 형성된 것을 특징으로 하는 제2고조파 발생소자.
  2. 제1항에 있어서, 상기 클래드층은 Al2O3또는 리튬탄탈레이트중 1종으로 형성된 것을 특징으로 하는 제2고조파 발생장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950069312A 1995-12-30 1995-12-30 제 2 고조파 발생소자 Expired - Fee Related KR0166907B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069312A KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069312A KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Publications (2)

Publication Number Publication Date
KR970054582A true KR970054582A (ko) 1997-07-31
KR0166907B1 KR0166907B1 (ko) 1999-01-15

Family

ID=19448407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950069312A Expired - Fee Related KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Country Status (1)

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KR (1) KR0166907B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190097940A (ko) 2018-02-13 2019-08-21 효성화학 주식회사 난연성이 개선된 폴리케톤 복합 조성물

Also Published As

Publication number Publication date
KR0166907B1 (ko) 1999-01-15

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