SE386299B - Integrerat kondensatorminne - Google Patents
Integrerat kondensatorminneInfo
- Publication number
- SE386299B SE386299B SE6905711A SE571169A SE386299B SE 386299 B SE386299 B SE 386299B SE 6905711 A SE6905711 A SE 6905711A SE 571169 A SE571169 A SE 571169A SE 386299 B SE386299 B SE 386299B
- Authority
- SE
- Sweden
- Prior art keywords
- integrated capacitor
- capacitor memory
- memory
- integrated
- capacitor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Software Systems (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6805704.A NL162500C (nl) | 1968-04-23 | 1968-04-23 | Geintegreerd condensatorgeheugen. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE386299B true SE386299B (sv) | 1976-08-02 |
Family
ID=19803412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE6905711A SE386299B (sv) | 1968-04-23 | 1969-04-22 | Integrerat kondensatorminne |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS509515B1 (de) |
| AT (1) | AT301908B (de) |
| BE (1) | BE731974A (de) |
| CH (1) | CH511496A (de) |
| DE (2) | DE1966847A1 (de) |
| DK (1) | DK131253B (de) |
| ES (2) | ES366285A1 (de) |
| FR (1) | FR2011816A1 (de) |
| GB (2) | GB1271155A (de) |
| NL (1) | NL162500C (de) |
| SE (1) | SE386299B (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574083B2 (ja) * | 2008-08-01 | 2014-08-20 | アンタイス エス.エイ. | 高い残留性及び容量を与える高い能力を有する注入可能なヒドロゲル |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356860A (en) * | 1964-05-08 | 1967-12-05 | Gen Micro Electronics Inc | Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation |
-
1968
- 1968-04-23 NL NL6805704.A patent/NL162500C/xx active
-
1969
- 1969-04-17 DE DE19691966847 patent/DE1966847A1/de not_active Withdrawn
- 1969-04-17 DE DE1919507A patent/DE1919507C3/de not_active Expired
- 1969-04-18 DK DK214469AA patent/DK131253B/da unknown
- 1969-04-21 CH CH600269A patent/CH511496A/de not_active IP Right Cessation
- 1969-04-21 ES ES366285A patent/ES366285A1/es not_active Expired
- 1969-04-21 AT AT383569A patent/AT301908B/de not_active IP Right Cessation
- 1969-04-22 SE SE6905711A patent/SE386299B/xx unknown
- 1969-04-23 JP JP44031055A patent/JPS509515B1/ja active Pending
- 1969-04-23 GB GB3691/71A patent/GB1271155A/en not_active Expired
- 1969-04-23 FR FR6912840A patent/FR2011816A1/fr not_active Withdrawn
- 1969-04-23 GB GB20743/69A patent/GB1271154A/en not_active Expired
- 1969-04-23 BE BE731974D patent/BE731974A/xx unknown
-
1970
- 1970-12-31 ES ES386979A patent/ES386979A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES366285A1 (es) | 1971-05-01 |
| DE1919507B2 (de) | 1979-12-06 |
| DK131253C (de) | 1975-11-17 |
| FR2011816A1 (de) | 1970-03-13 |
| DE1966847A1 (de) | 1974-09-19 |
| DK131253B (da) | 1975-06-16 |
| DE1919507C3 (de) | 1982-06-09 |
| GB1271154A (en) | 1972-04-19 |
| AT301908B (de) | 1972-09-25 |
| CH511496A (de) | 1971-08-15 |
| NL162500C (nl) | 1980-05-16 |
| ES386979A1 (es) | 1973-12-01 |
| NL6805704A (de) | 1969-10-27 |
| DE1919507A1 (de) | 1969-11-20 |
| BE731974A (de) | 1969-10-23 |
| NL162500B (nl) | 1979-12-17 |
| GB1271155A (en) | 1972-04-19 |
| JPS509515B1 (de) | 1975-04-14 |
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