SG163544A1 - Impurity introducing apparatus and impurity introducing method - Google Patents

Impurity introducing apparatus and impurity introducing method

Info

Publication number
SG163544A1
SG163544A1 SG201004689-4A SG2010046894A SG163544A1 SG 163544 A1 SG163544 A1 SG 163544A1 SG 2010046894 A SG2010046894 A SG 2010046894A SG 163544 A1 SG163544 A1 SG 163544A1
Authority
SG
Singapore
Prior art keywords
mixed
impurity introducing
impurities
mixing
semiconductor substrate
Prior art date
Application number
SG201004689-4A
Other languages
English (en)
Inventor
Bunji Mizuno
Ichiro Nakayama
Yuichiro Sasaki
Tomohiro Okumura
Cheng-Guo Jin
Hiroyuki Ito
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of SG163544A1 publication Critical patent/SG163544A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG201004689-4A 2005-03-30 2006-03-29 Impurity introducing apparatus and impurity introducing method SG163544A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005099150 2005-03-30

Publications (1)

Publication Number Publication Date
SG163544A1 true SG163544A1 (en) 2010-08-30

Family

ID=37073337

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201004689-4A SG163544A1 (en) 2005-03-30 2006-03-29 Impurity introducing apparatus and impurity introducing method

Country Status (8)

Country Link
US (3) US20090140174A1 (fr)
EP (1) EP1865537A1 (fr)
JP (1) JP5116466B2 (fr)
KR (1) KR101133090B1 (fr)
CN (1) CN101151707B (fr)
SG (1) SG163544A1 (fr)
TW (1) TWI383438B (fr)
WO (1) WO2006106779A1 (fr)

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CN102737969A (zh) * 2011-04-13 2012-10-17 刘莹 一种在晶体硅表面以激光制备超浅结的设备
JP2012234960A (ja) * 2011-04-28 2012-11-29 Ulvac Japan Ltd 半導体デバイスおよび半導体デバイスの製造方法
US9190290B2 (en) * 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
CN104241450B (zh) * 2014-09-29 2016-08-17 白茹 一种晶体硅太阳能电池的扩散制结方法
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems

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Also Published As

Publication number Publication date
KR20070114768A (ko) 2007-12-04
US7622725B2 (en) 2009-11-24
CN101151707B (zh) 2012-08-29
JPWO2006106779A1 (ja) 2008-09-11
US7626184B2 (en) 2009-12-01
TWI383438B (zh) 2013-01-21
US20080210167A1 (en) 2008-09-04
US20090140174A1 (en) 2009-06-04
CN101151707A (zh) 2008-03-26
TW200710959A (en) 2007-03-16
WO2006106779A1 (fr) 2006-10-12
KR101133090B1 (ko) 2012-04-04
EP1865537A1 (fr) 2007-12-12
US20080166861A1 (en) 2008-07-10
JP5116466B2 (ja) 2013-01-09

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