SG98002A1 - Thin film deposition apparatus for semiconductor - Google Patents

Thin film deposition apparatus for semiconductor

Info

Publication number
SG98002A1
SG98002A1 SG200007424A SG200007424A SG98002A1 SG 98002 A1 SG98002 A1 SG 98002A1 SG 200007424 A SG200007424 A SG 200007424A SG 200007424 A SG200007424 A SG 200007424A SG 98002 A1 SG98002 A1 SG 98002A1
Authority
SG
Singapore
Prior art keywords
gas
thin film
reactor
deposition apparatus
film deposition
Prior art date
Application number
SG200007424A
Other languages
English (en)
Inventor
Choi Won-Sung
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd filed Critical Ips Ltd
Publication of SG98002A1 publication Critical patent/SG98002A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200007424A 1999-12-17 2000-12-13 Thin film deposition apparatus for semiconductor SG98002A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990058541A KR100330749B1 (ko) 1999-12-17 1999-12-17 반도체 박막증착장치

Publications (1)

Publication Number Publication Date
SG98002A1 true SG98002A1 (en) 2003-08-20

Family

ID=19626555

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200007424A SG98002A1 (en) 1999-12-17 2000-12-13 Thin film deposition apparatus for semiconductor

Country Status (8)

Country Link
US (1) US6740166B2 (de)
EP (1) EP1108468B1 (de)
JP (1) JP3481586B2 (de)
KR (1) KR100330749B1 (de)
AT (1) ATE268217T1 (de)
DE (1) DE60011215T2 (de)
SG (1) SG98002A1 (de)
TW (1) TW466565B (de)

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US20070031991A1 (en) * 2003-03-21 2007-02-08 Forschungszentrum Julich Gmbh Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
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Also Published As

Publication number Publication date
KR100330749B1 (ko) 2002-04-03
JP3481586B2 (ja) 2003-12-22
US6740166B2 (en) 2004-05-25
JP2001217232A (ja) 2001-08-10
TW466565B (en) 2001-12-01
EP1108468A1 (de) 2001-06-20
DE60011215T2 (de) 2005-07-07
KR20010056876A (ko) 2001-07-04
EP1108468B1 (de) 2004-06-02
ATE268217T1 (de) 2004-06-15
DE60011215D1 (de) 2004-07-08
US20020134307A1 (en) 2002-09-26

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