TW200520033A - Method of processing substrate and chemical used in the same - Google Patents

Method of processing substrate and chemical used in the same

Info

Publication number
TW200520033A
TW200520033A TW093127840A TW93127840A TW200520033A TW 200520033 A TW200520033 A TW 200520033A TW 093127840 A TW093127840 A TW 093127840A TW 93127840 A TW93127840 A TW 93127840A TW 200520033 A TW200520033 A TW 200520033A
Authority
TW
Taiwan
Prior art keywords
same
processing substrate
chemical used
organic film
film pattern
Prior art date
Application number
TW093127840A
Other languages
English (en)
Other versions
TWI252508B (en
Inventor
Shusaku Kido
Original Assignee
Nec Lcd Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Lcd Technologies Ltd filed Critical Nec Lcd Technologies Ltd
Publication of TW200520033A publication Critical patent/TW200520033A/zh
Application granted granted Critical
Publication of TWI252508B publication Critical patent/TWI252508B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW093127840A 2003-09-18 2004-09-15 Method of processing substrate and chemical used in the same TWI252508B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003326553 2003-09-18
JP2003375975 2003-11-05
JP2004230717A JP2005159294A (ja) 2003-09-18 2004-08-06 基板処理方法及びそれに用いる薬液

Publications (2)

Publication Number Publication Date
TW200520033A true TW200520033A (en) 2005-06-16
TWI252508B TWI252508B (en) 2006-04-01

Family

ID=34317232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127840A TWI252508B (en) 2003-09-18 2004-09-15 Method of processing substrate and chemical used in the same

Country Status (5)

Country Link
US (2) US20050064614A1 (zh)
JP (1) JP2005159294A (zh)
KR (4) KR100713593B1 (zh)
CN (1) CN100347612C (zh)
TW (1) TWI252508B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007041635A2 (en) * 2005-10-03 2007-04-12 Xencor, Inc. Fc variants with optimized fc receptor binding properties
WO2007044616A2 (en) * 2005-10-06 2007-04-19 Xencor, Inc. Optimized anti-cd30 antibodies
WO2007099925A1 (ja) * 2006-03-01 2007-09-07 Nagase Chemtex Corporation 感光性有機膜用現像液組成物
JP2007256666A (ja) * 2006-03-23 2007-10-04 Nec Lcd Technologies Ltd 基板処理方法及びそれに用いる薬液
JP5145654B2 (ja) * 2006-05-29 2013-02-20 日本電気株式会社 基板処理装置及び基板処理方法
KR100796600B1 (ko) * 2006-08-04 2008-01-21 삼성에스디아이 주식회사 박막트랜지스터의 제조 방법
JP5224228B2 (ja) * 2006-09-15 2013-07-03 Ｎｌｔテクノロジー株式会社 薬液を用いた基板処理方法
JP5331321B2 (ja) 2007-08-31 2013-10-30 ゴールドチャームリミテッド 表示装置の製造方法

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
DE3230597C1 (de) * 1982-08-17 1983-12-22 Johannes Josef Edmund 1000 Berlin Martin Roststab fuer Rostbelaege,insbesondere von Feuerungen
US5240878A (en) * 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US5376573A (en) * 1993-12-10 1994-12-27 Advanced Micro Devices, Inc. Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
KR100219562B1 (ko) * 1996-10-28 1999-09-01 윤종용 반도체장치의 다층 배선 형성방법
US5888309A (en) * 1997-12-29 1999-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
US6207583B1 (en) * 1998-09-04 2001-03-27 Alliedsignal Inc. Photoresist ashing process for organic and inorganic polymer dielectric materials
DE60040252D1 (de) 1999-02-19 2008-10-30 Axcelis Tech Inc Verfahren zur Entfernung von Rückständen nach Photoresistveraschung
US6281135B1 (en) * 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6207350B1 (en) * 2000-01-18 2001-03-27 Headway Technologies, Inc. Corrosion inhibitor for NiCu for high performance writers
TW511147B (en) * 2000-06-12 2002-11-21 Nec Corp Pattern formation method and method of manufacturing display using it
TW594444B (en) * 2000-09-01 2004-06-21 Tokuyama Corp Residue cleaning solution
US7045268B2 (en) * 2000-11-29 2006-05-16 E.I. Du Pont De Nemours And Company Polymers blends and their use in photoresist compositions for microlithography
KR20020052842A (ko) * 2000-12-26 2002-07-04 박종섭 플라즈마 애싱을 이용한 포토레지스트패턴 형성방법
US6579666B2 (en) * 2000-12-27 2003-06-17 Intel Corportion Methodology to introduce metal and via openings
JP2002303993A (ja) * 2001-04-04 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR20030058247A (ko) * 2001-12-31 2003-07-07 주식회사 하이닉스반도체 패턴 변형을 방지할 수 있는 반도체 소자 제조 방법
KR20030059872A (ko) * 2002-01-03 2003-07-12 삼성전자주식회사 금속 또는 금속산화물 미세 패턴의 제조방법
KR100451508B1 (ko) * 2002-02-26 2004-10-06 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
US6861365B2 (en) * 2002-06-28 2005-03-01 Hewlett-Packard Development Company, L.P. Method and system for forming a semiconductor device
CN1438544A (zh) * 2003-02-28 2003-08-27 北京大学 多层高深宽比硅台阶深刻蚀方法

Also Published As

Publication number Publication date
US20050064614A1 (en) 2005-03-24
KR20050028890A (ko) 2005-03-23
KR100713593B1 (ko) 2007-05-02
KR20070091077A (ko) 2007-09-07
CN100347612C (zh) 2007-11-07
KR20070080254A (ko) 2007-08-09
KR100778255B1 (ko) 2007-11-22
KR100779887B1 (ko) 2007-11-28
JP2005159294A (ja) 2005-06-16
KR20060093318A (ko) 2006-08-24
CN1605942A (zh) 2005-04-13
US20060273071A1 (en) 2006-12-07
TWI252508B (en) 2006-04-01
KR100837124B1 (ko) 2008-06-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees