TW200633143A - Method of fabricating flash memory device - Google Patents

Method of fabricating flash memory device

Info

Publication number
TW200633143A
TW200633143A TW094120676A TW94120676A TW200633143A TW 200633143 A TW200633143 A TW 200633143A TW 094120676 A TW094120676 A TW 094120676A TW 94120676 A TW94120676 A TW 94120676A TW 200633143 A TW200633143 A TW 200633143A
Authority
TW
Taiwan
Prior art keywords
flash memory
gate
film
memory device
semiconductor substrate
Prior art date
Application number
TW094120676A
Other languages
English (en)
Other versions
TWI306647B (en
Inventor
Keun-Woo Lee
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200633143A publication Critical patent/TW200633143A/zh
Application granted granted Critical
Publication of TWI306647B publication Critical patent/TWI306647B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW094120676A 2005-03-10 2005-06-21 Method of fabricating flash memory device TWI306647B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050020227A KR100635201B1 (ko) 2005-03-10 2005-03-10 플래쉬 메모리 소자의 제조방법

Publications (2)

Publication Number Publication Date
TW200633143A true TW200633143A (en) 2006-09-16
TWI306647B TWI306647B (en) 2009-02-21

Family

ID=36994281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120676A TWI306647B (en) 2005-03-10 2005-06-21 Method of fabricating flash memory device

Country Status (4)

Country Link
JP (1) JP2006253622A (zh)
KR (1) KR100635201B1 (zh)
CN (1) CN100399546C (zh)
TW (1) TWI306647B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100953050B1 (ko) * 2007-10-10 2010-04-14 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그의 제조 방법
CN101635278B (zh) * 2008-07-22 2011-11-30 中芯国际集成电路制造(上海)有限公司 Dram中存储单元的离子掺杂方法
KR102031174B1 (ko) 2012-11-16 2019-10-11 삼성전자주식회사 반도체 소자, 반도체 소자의 제조 방법 및 기판 가공 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100255512B1 (ko) * 1996-06-29 2000-05-01 김영환 플래쉬 메모리 소자 제조방법
CN1099705C (zh) * 1998-06-24 2003-01-22 台湾积体电路制造股份有限公司 快闪存储单元的制造方法
US6153906A (en) * 1998-12-08 2000-11-28 United Microelectronics Corp. Flash memory
JP2000311992A (ja) * 1999-04-26 2000-11-07 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory
JP4819215B2 (ja) * 2000-07-24 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその製造方法
CN1290197C (zh) * 2001-03-12 2006-12-13 株式会社日立制作所 用于制造半导体集成电路器件的方法
KR100414562B1 (ko) * 2001-06-29 2004-01-07 주식회사 하이닉스반도체 비휘발성 메모리 셀의 제조 방법
JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN1832145A (zh) 2006-09-13
JP2006253622A (ja) 2006-09-21
CN100399546C (zh) 2008-07-02
TWI306647B (en) 2009-02-21
KR100635201B1 (ko) 2006-10-16
KR20060099171A (ko) 2006-09-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees