TW200633211A - Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer - Google Patents

Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer

Info

Publication number
TW200633211A
TW200633211A TW094106558A TW94106558A TW200633211A TW 200633211 A TW200633211 A TW 200633211A TW 094106558 A TW094106558 A TW 094106558A TW 94106558 A TW94106558 A TW 94106558A TW 200633211 A TW200633211 A TW 200633211A
Authority
TW
Taiwan
Prior art keywords
voltage
field effect
same wafer
low
semiconductor devices
Prior art date
Application number
TW094106558A
Other languages
Chinese (zh)
Inventor
Mourad Chertouk
Original Assignee
Win Semiconductors Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Win Semiconductors Corp filed Critical Win Semiconductors Corp
Priority to TW094106558A priority Critical patent/TW200633211A/en
Publication of TW200633211A publication Critical patent/TW200633211A/en

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A field effect transistor(FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for high voltage operations. The structure and fabrication processes thereof not only provide a reliable way to produce high-voltage FETs, but also allow the integration of conventional low voltage FETs on the same wafer.
TW094106558A 2005-03-04 2005-03-04 Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer TW200633211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094106558A TW200633211A (en) 2005-03-04 2005-03-04 Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094106558A TW200633211A (en) 2005-03-04 2005-03-04 Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer

Publications (1)

Publication Number Publication Date
TW200633211A true TW200633211A (en) 2006-09-16

Family

ID=57809259

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106558A TW200633211A (en) 2005-03-04 2005-03-04 Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer

Country Status (1)

Country Link
TW (1) TW200633211A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254943A (en) * 2011-08-06 2011-11-23 深圳市稳先微电子有限公司 Transistor power device with gate source side table protection and manufacturing method thereof
CN102280483A (en) * 2011-08-06 2011-12-14 深圳市稳先微电子有限公司 Power device with side stage protecting source and gate and manufacture method thereof
US9508843B2 (en) 2013-09-10 2016-11-29 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10236236B2 (en) 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254943A (en) * 2011-08-06 2011-11-23 深圳市稳先微电子有限公司 Transistor power device with gate source side table protection and manufacturing method thereof
CN102280483A (en) * 2011-08-06 2011-12-14 深圳市稳先微电子有限公司 Power device with side stage protecting source and gate and manufacture method thereof
CN102254943B (en) * 2011-08-06 2013-06-19 深圳市稳先微电子有限公司 Transistor power device with gate source side table protection and manufacturing method thereof
US9508843B2 (en) 2013-09-10 2016-11-29 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10084076B2 (en) 2013-09-10 2018-09-25 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10236236B2 (en) 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10468516B2 (en) 2013-09-10 2019-11-05 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10573736B2 (en) 2013-09-10 2020-02-25 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads
US10950524B2 (en) 2013-09-10 2021-03-16 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US11817494B2 (en) 2013-09-10 2023-11-14 Ancora Semiconductors Inc. Semiconductor device having reduced capacitance between source and drain pads
US12062716B2 (en) 2013-09-10 2024-08-13 Ancora Semiconductors Inc. Semiconductor device including source pad region and drain pad region configured to improve current uniformity and reduce resistance

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