TW200633232A - Method of fabricating flash memory device - Google Patents

Method of fabricating flash memory device

Info

Publication number
TW200633232A
TW200633232A TW094121774A TW94121774A TW200633232A TW 200633232 A TW200633232 A TW 200633232A TW 094121774 A TW094121774 A TW 094121774A TW 94121774 A TW94121774 A TW 94121774A TW 200633232 A TW200633232 A TW 200633232A
Authority
TW
Taiwan
Prior art keywords
floating gates
memory device
flash memory
self
prevented
Prior art date
Application number
TW094121774A
Other languages
English (en)
Other versions
TWI272726B (en
Inventor
Seok-Kiu Lee
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200633232A publication Critical patent/TW200633232A/zh
Application granted granted Critical
Publication of TWI272726B publication Critical patent/TWI272726B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW094121774A 2005-03-10 2005-06-29 Method of fabricating flash memory device TWI272726B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050020238A KR100632640B1 (ko) 2005-03-10 2005-03-10 플래쉬 메모리 소자의 제조방법

Publications (2)

Publication Number Publication Date
TW200633232A true TW200633232A (en) 2006-09-16
TWI272726B TWI272726B (en) 2007-02-01

Family

ID=36933993

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121774A TWI272726B (en) 2005-03-10 2005-06-29 Method of fabricating flash memory device

Country Status (6)

Country Link
US (1) US7300843B2 (zh)
JP (1) JP2006253620A (zh)
KR (1) KR100632640B1 (zh)
CN (1) CN100386865C (zh)
DE (1) DE102005030448A1 (zh)
TW (1) TWI272726B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100642650B1 (ko) 2005-09-22 2006-11-10 삼성전자주식회사 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법
KR100854502B1 (ko) * 2007-02-26 2008-08-26 삼성전자주식회사 리세스 채널 영역을 갖는 트랜지스터를 채택하는반도체소자 및 그 제조방법
US7902597B2 (en) 2006-03-22 2011-03-08 Samsung Electronics Co., Ltd. Transistors with laterally extended active regions and methods of fabricating same
KR100771812B1 (ko) * 2006-10-31 2007-10-30 주식회사 하이닉스반도체 플래시 메모리 소자 및 제조방법
TWI343634B (en) * 2007-07-03 2011-06-11 Nanya Technology Corp Method for manufacturing flash memory
KR100998945B1 (ko) 2008-09-05 2010-12-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
WO2010117703A2 (en) * 2009-03-31 2010-10-14 Applied Materials, Inc. Method of selective nitridation
US8291801B2 (en) * 2009-08-26 2012-10-23 Robert Bosch Gmbh Table saw with ratchet mechanism
CN102054841A (zh) * 2009-11-10 2011-05-11 中芯国际集成电路制造(上海)有限公司 一种与非门闪存及其制造方法
CN102332433B (zh) * 2011-07-28 2016-04-13 上海华虹宏力半导体制造有限公司 存储器及其形成方法
US9876019B1 (en) * 2016-07-13 2018-01-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits with programmable memory and methods for producing the same
TWI693766B (zh) * 2018-04-18 2020-05-11 力旺電子股份有限公司 靜電放電防護裝置
CN113764529B (zh) * 2020-06-03 2023-07-04 北方集成电路技术创新中心(北京)有限公司 半导体结构及其形成方法
TWI852393B (zh) * 2023-03-10 2024-08-11 華邦電子股份有限公司 半導體裝置及其形成方法

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JP2867782B2 (ja) * 1992-03-17 1999-03-10 日本電気株式会社 半導体不揮発性記憶装置の製造方法
JP3362970B2 (ja) * 1994-08-19 2003-01-07 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JPH10189920A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP3063705B2 (ja) * 1997-10-14 2000-07-12 日本電気株式会社 半導体装置の製造方法
JP3867378B2 (ja) * 1997-12-09 2007-01-10 ソニー株式会社 半導体不揮発性記憶装置の製造方法
US6200856B1 (en) * 1998-03-25 2001-03-13 Winbond Electronics Corporation Method of fabricating self-aligned stacked gate flash memory cell
US6403421B1 (en) * 1998-04-22 2002-06-11 Sony Corporation Semiconductor nonvolatile memory device and method of producing the same
WO2000051188A1 (en) * 1999-02-23 2000-08-31 Actrans System, Inc. Flash memory cell with self-aligned gates and fabrication process
US6159801A (en) * 1999-04-26 2000-12-12 Taiwan Semiconductor Manufacturing Company Method to increase coupling ratio of source to floating gate in split-gate flash
US6200860B1 (en) * 1999-05-03 2001-03-13 Taiwan Semiconductor Manufacturing Company Process for preventing the reverse tunneling during programming in split gate flash
KR20010003086A (ko) 1999-06-21 2001-01-15 윤종용 플로팅 게이트 형성 방법
JP4068286B2 (ja) * 2000-06-30 2008-03-26 株式会社東芝 半導体装置の製造方法
US20020130357A1 (en) * 2001-03-14 2002-09-19 Hurley Kelly T. Self-aligned floating gate flash cell system and method
US6562681B2 (en) * 2001-06-13 2003-05-13 Mosel Vitelic, Inc. Nonvolatile memories with floating gate spacers, and methods of fabrication
US6911370B2 (en) * 2002-05-24 2005-06-28 Hynix Semiconductor, Inc. Flash memory device having poly spacers
US6743675B2 (en) * 2002-10-01 2004-06-01 Mosel Vitelic, Inc. Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component
US6914291B2 (en) * 2002-11-18 2005-07-05 Ching-Yuan Wu Self-aligned floating-gate structure for flash memory device
KR100685619B1 (ko) * 2002-12-26 2007-02-22 주식회사 하이닉스반도체 플래쉬 메모리 소자 제조 방법
JP2004228421A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
CN100429790C (zh) * 2003-03-19 2008-10-29 富士通株式会社 半导体器件及其制造方法
KR100490301B1 (ko) * 2003-06-30 2005-05-18 주식회사 하이닉스반도체 난드 플래시 메모리 소자의 제조 방법

Also Published As

Publication number Publication date
TWI272726B (en) 2007-02-01
JP2006253620A (ja) 2006-09-21
DE102005030448A1 (de) 2006-09-21
US20060205151A1 (en) 2006-09-14
US7300843B2 (en) 2007-11-27
KR100632640B1 (ko) 2006-10-12
CN100386865C (zh) 2008-05-07
KR20060099179A (ko) 2006-09-19
CN1832147A (zh) 2006-09-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees