TW200714930A - Multi-layer reflecting mirror, its production method, optical system, exposure device and production method of elements - Google Patents

Multi-layer reflecting mirror, its production method, optical system, exposure device and production method of elements

Info

Publication number
TW200714930A
TW200714930A TW095137074A TW95137074A TW200714930A TW 200714930 A TW200714930 A TW 200714930A TW 095137074 A TW095137074 A TW 095137074A TW 95137074 A TW95137074 A TW 95137074A TW 200714930 A TW200714930 A TW 200714930A
Authority
TW
Taiwan
Prior art keywords
layer
production method
reflecting mirror
elements
optical system
Prior art date
Application number
TW095137074A
Other languages
English (en)
Other versions
TWI410676B (zh
Inventor
Masayuki Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200714930A publication Critical patent/TW200714930A/zh
Application granted granted Critical
Publication of TWI410676B publication Critical patent/TWI410676B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW095137074A 2005-10-11 2006-10-05 多層膜反射鏡、多層膜反射鏡的製造方法、光學系統、曝光裝置以及元件的製造方法 TWI410676B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005295856 2005-10-11

Publications (2)

Publication Number Publication Date
TW200714930A true TW200714930A (en) 2007-04-16
TWI410676B TWI410676B (zh) 2013-10-01

Family

ID=37942658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137074A TWI410676B (zh) 2005-10-11 2006-10-05 多層膜反射鏡、多層膜反射鏡的製造方法、光學系統、曝光裝置以及元件的製造方法

Country Status (6)

Country Link
EP (1) EP1947682B1 (zh)
JP (1) JP5061903B2 (zh)
KR (1) KR101310525B1 (zh)
CN (1) CN100559551C (zh)
TW (1) TWI410676B (zh)
WO (1) WO2007043414A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9996012B2 (en) 2008-02-15 2018-06-12 Carl Zeiss Smt Gmbh Facet mirror for use in a projection exposure apparatus for microlithography
TWI764614B (zh) * 2021-03-10 2022-05-11 台灣積體電路製造股份有限公司 微影系統及其方法

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DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009029471A1 (de) * 2009-09-15 2011-03-31 Carl Zeiss Smt Gmbh Spiegel zur Verwendung in einer Mikrolithographie-Projektionsbelichtungsanlage
US8526104B2 (en) * 2010-04-30 2013-09-03 Corning Incorporated Plasma ion assisted deposition of Mo/Si multilayer EUV coatings
DE102011005543A1 (de) 2011-03-15 2012-09-20 Carl Zeiss Smt Gmbh Verfahren zur Korrektur der Oberflächenform eines Spiegels
WO2012126954A1 (en) 2011-03-23 2012-09-27 Carl Zeiss Smt Gmbh Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
US9249501B2 (en) 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
CN102681055B (zh) * 2012-05-30 2014-09-17 同济大学 一种硅铝合金/锆极紫外多层膜反射镜及其制备方法
DE102012223669A1 (de) 2012-12-19 2013-11-21 Carl Zeiss Smt Gmbh Wellenfrontkorrektur von beschichteten Spiegeln
DE102013212462A1 (de) 2013-06-27 2015-01-15 Carl Zeiss Smt Gmbh Oberflächenkorrektur von Spiegeln mit Entkopplungsbeschichtung
DE102013222330A1 (de) * 2013-11-04 2015-05-07 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US9581890B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
CN105002466B (zh) * 2015-06-23 2017-10-31 中国科学院国家天文台南京天文光学技术研究所 碳化硅非球面反射镜加工与改性一体化的制备方法
DE102015213249A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegels, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102015224238A1 (de) 2015-12-03 2016-12-15 Carl Zeiss Smt Gmbh Optisches Element, Projektionssystem und EUV-Lithographiesystem damit und Verfahren zur Korrektur einer Oberflächenform
CA3021916A1 (en) * 2016-04-25 2017-11-02 Asml Netherlands B.V. A membrane for euv lithography
US10217729B2 (en) 2016-09-30 2019-02-26 Intel Corporation Apparatus for micro pick and bond
DE102016224113A1 (de) * 2016-12-05 2018-06-07 Carl Zeiss Smt Gmbh Intensitätsanpassungsfilter für die euv - mikrolithographie und verfahren zur herstellung desselben sowie beleuchtungssystem mit einem entsprechenden filter
US20180166294A1 (en) * 2016-12-13 2018-06-14 Intel Corporation Apparatus and methods to achieve uniform package thickness
TWI845677B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
CN116463588B (zh) * 2023-04-23 2023-11-03 有研国晶辉新材料有限公司 一种红外滤光薄膜的制备方法、红外陷波光学元件

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JPS6441155A (en) 1987-08-05 1989-02-13 Mitsubishi Electric Corp Supporting device for electron lens
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
CA2374737C (en) 1999-07-09 2008-02-12 Boehringer Ingelheim Pharmaceuticals, Inc. Novel process for synthesis of heteroaryl-substituted urea compounds
JP2002131487A (ja) * 2000-10-20 2002-05-09 Nikon Corp 多層膜反射鏡およびｅｕｖ露光装置
TW519574B (en) * 2000-10-20 2003-02-01 Nikon Corp Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same
US6664554B2 (en) * 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
JP4320970B2 (ja) * 2001-04-11 2009-08-26 株式会社ニコン 多層膜反射鏡の製造方法
TW561280B (en) * 2001-04-27 2003-11-11 Nikon Corp Multi-layer film reflection mirror and exposure equipment
JP2003014893A (ja) 2001-04-27 2003-01-15 Nikon Corp 多層膜反射鏡及び露光装置
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
JP4460284B2 (ja) * 2001-07-03 2010-05-12 イーユーヴィー リミテッド ライアビリティー コーポレイション 光学要素及びその形成方法
JP2003066195A (ja) * 2001-08-27 2003-03-05 Nikon Corp 多層膜除去加工装置、多層膜反射鏡、その製造方法、軟ｘ線光学系及び露光装置
US20030081722A1 (en) * 2001-08-27 2003-05-01 Nikon Corporation Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
JP4415523B2 (ja) 2001-09-13 2010-02-17 株式会社ニコン 多層膜反射鏡、その製造方法、ｘ線露光装置、半導体デバイスの製造方法及びｘ線光学系
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JP4482400B2 (ja) * 2004-08-17 2010-06-16 エスアイアイ・ナノテクノロジー株式会社 Ｅｕｖｌマスクの多層膜中の振幅欠陥修正方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9996012B2 (en) 2008-02-15 2018-06-12 Carl Zeiss Smt Gmbh Facet mirror for use in a projection exposure apparatus for microlithography
TWI639892B (zh) * 2008-02-15 2018-11-01 卡爾蔡司Ｓｍｔ有限公司 微影中用於投射曝光裝置之組合反射鏡
TWI764614B (zh) * 2021-03-10 2022-05-11 台灣積體電路製造股份有限公司 微影系統及其方法

Also Published As

Publication number Publication date
CN101278376A (zh) 2008-10-01
JP5061903B2 (ja) 2012-10-31
EP1947682A4 (en) 2009-06-24
KR20080056763A (ko) 2008-06-23
CN100559551C (zh) 2009-11-11
JPWO2007043414A1 (ja) 2009-04-16
TWI410676B (zh) 2013-10-01
HK1119487A1 (zh) 2009-03-06
EP1947682B1 (en) 2012-01-18
KR101310525B1 (ko) 2013-09-23
EP1947682A1 (en) 2008-07-23
WO2007043414A1 (ja) 2007-04-19

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