TW200715565A - Making organic thin film transistor array panels - Google Patents

Making organic thin film transistor array panels

Info

Publication number
TW200715565A
TW200715565A TW095131904A TW95131904A TW200715565A TW 200715565 A TW200715565 A TW 200715565A TW 095131904 A TW095131904 A TW 095131904A TW 95131904 A TW95131904 A TW 95131904A TW 200715565 A TW200715565 A TW 200715565A
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
electrode
organic thin
drain electrode
Prior art date
Application number
TW095131904A
Other languages
English (en)
Other versions
TWI429084B (zh
Inventor
Keun-Kyu Song
Tae-Young Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200715565A publication Critical patent/TW200715565A/zh
Application granted granted Critical
Publication of TWI429084B publication Critical patent/TWI429084B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
TW095131904A 2005-09-30 2006-08-30 製作有機薄膜電晶體陣列面板 TWI429084B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050091862A KR101197053B1 (ko) 2005-09-30 2005-09-30 유기 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200715565A true TW200715565A (en) 2007-04-16
TWI429084B TWI429084B (zh) 2014-03-01

Family

ID=37959354

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131904A TWI429084B (zh) 2005-09-30 2006-08-30 製作有機薄膜電晶體陣列面板

Country Status (5)

Country Link
US (1) US7569851B2 (zh)
JP (1) JP5497976B2 (zh)
KR (1) KR101197053B1 (zh)
CN (1) CN1941398B (zh)
TW (1) TWI429084B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090204A1 (en) * 2007-03-26 2010-04-15 Takashi Chuman Organic semiconductor element and manufacture method thereof
KR101475097B1 (ko) * 2007-04-25 2014-12-23 메르크 파텐트 게엠베하 전자 디바이스의 제조 방법
JP5256676B2 (ja) * 2007-09-21 2013-08-07 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
GB0722750D0 (en) * 2007-11-20 2008-01-02 Cambridge Display Technology O Organic thin film transistors active matrix organic optical devices and emthods of making the same
US8471988B2 (en) * 2008-08-27 2013-06-25 Sharp Kabushiki Kaisha Electrode contact structure, liquid crystal display apparatus including same, and method for manufacturing electrode contact structure
JP5455010B2 (ja) * 2009-03-13 2014-03-26 富士フイルム株式会社 樹脂成形体の製造方法、インクジェットヘッド、及び電子機器
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP2011035037A (ja) * 2009-07-30 2011-02-17 Sony Corp 回路基板の製造方法および回路基板
KR101073562B1 (ko) * 2009-08-21 2011-10-17 삼성모바일디스플레이주식회사 패드부, 이를 포함하는 유기전계발광표시장치 및 유기전계발광표시장치의 제조방법
CN111326435B (zh) * 2010-04-23 2023-12-01 株式会社半导体能源研究所 半导体装置的制造方法
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
CN102800629B (zh) * 2012-07-23 2014-06-11 京东方科技集团股份有限公司 一种有机薄膜晶体管阵列基板制作方法
CN104576658B (zh) * 2014-12-30 2017-11-14 天马微电子股份有限公司 一种阵列基板及其制作方法及显示器
GB2567897A (en) * 2017-10-31 2019-05-01 Flexenable Ltd Source-drain conductors for organic TFTS
GB2584898B (en) * 2019-06-20 2024-05-08 Flexenable Tech Limited Semiconductor devices

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2735070B2 (ja) * 1996-04-15 1998-04-02 日本電気株式会社 アクティブマトリクス液晶表示パネル
EP0940797B1 (en) 1997-08-21 2005-03-23 Seiko Epson Corporation Active matrix display
CN100530759C (zh) * 1998-03-17 2009-08-19 精工爱普生株式会社 薄膜构图的衬底及其表面处理
JP2000269504A (ja) 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP2001244467A (ja) 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
JP4841751B2 (ja) 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
EP1405356B1 (en) * 2001-07-09 2013-07-31 Plastic Logic Limited Solution influenced alignment
JP4269134B2 (ja) 2001-11-06 2009-05-27 セイコーエプソン株式会社 有機半導体装置
JP4095830B2 (ja) 2002-01-29 2008-06-04 統寶光電股▲ふん▼有限公司 有機ｌｅｄデバイスおよびその製造方法
JP2003249658A (ja) 2002-02-26 2003-09-05 Seiko Epson Corp 有機半導体装置
US6972261B2 (en) * 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment
JP4085420B2 (ja) * 2002-07-02 2008-05-14 ソニー株式会社 電界効果半導体装置及びその製造方法
JP4723787B2 (ja) * 2002-07-09 2011-07-13 シャープ株式会社 電界効果型トランジスタ、その製造方法及び画像表示装置
JP4618990B2 (ja) 2002-08-02 2011-01-26 株式会社半導体エネルギー研究所 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置
JP4434563B2 (ja) * 2002-09-12 2010-03-17 パイオニア株式会社 有機ｅｌ表示装置の製造方法
JP4713818B2 (ja) * 2003-03-28 2011-06-29 パナソニック株式会社 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法
TWI238449B (en) * 2003-06-06 2005-08-21 Pioneer Corp Organic semiconductor device and method of manufacture of same
JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
JP4969041B2 (ja) * 2004-01-26 2012-07-04 株式会社半導体エネルギー研究所 表示装置の作製方法
CN100504553C (zh) * 2004-02-06 2009-06-24 三星电子株式会社 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器
JP4729855B2 (ja) * 2004-03-15 2011-07-20 セイコーエプソン株式会社 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101078360B1 (ko) * 2004-11-12 2011-10-31 엘지디스플레이 주식회사 폴리형 액정 표시 패널 및 그 제조 방법

Also Published As

Publication number Publication date
KR101197053B1 (ko) 2012-11-06
CN1941398B (zh) 2010-12-29
TWI429084B (zh) 2014-03-01
CN1941398A (zh) 2007-04-04
US7569851B2 (en) 2009-08-04
KR20070036876A (ko) 2007-04-04
US20070158651A1 (en) 2007-07-12
JP5497976B2 (ja) 2014-05-21
JP2007103931A (ja) 2007-04-19

Similar Documents

Publication Publication Date Title
TW200614855A (en) Organic thin film transistor array and manufacturing method thereof
TW200715565A (en) Making organic thin film transistor array panels
TW200629563A (en) Thin film transistor array panel and method for manufacturing the same
TWI370312B (zh)
TW200500702A (en) Thin film transistor array panel and manufacturing method thereof
TW200640013A (en) Thin film transistor panel
TW200641496A (en) Organic thin film transistor array panel and method of manufacturing the same
TW200703735A (en) Organic thin film transistor array panel and method of manufacturing the same
TW200727492A (en) Organic thin film transistor array panel
EP1890334A3 (en) Thin-film transistor substrate, method of manufacturing the same and display apparatus having the same
EP1909327A3 (en) Thin film transistor panel and manufacturing method thereof
TW200638548A (en) Thin film transistor array panel and manufacturing method thereof
EP1865558A3 (en) Thin film transistor array panel and method of manufacturing the same
TW200610206A (en) Organic thin film transistor and substrate including the same
TW200703656A (en) Organic thin film transistor array panel and manufacturing method thereof
TW200734780A (en) Display device and manufacturing method therefor
TW200624971A (en) Thin film transistor array panel and manufacturing method thereof
TW200619794A (en) Thin film transistor array panel with improved connection to test lines
TW200802892A (en) TFT array substrate, its manufacturing method, and display device
TW200629568A (en) Thin film transistor array panel
TW200640015A (en) TFT substrate and display device having the same
TW200743213A (en) Muti-channel thin film transistor
TW200736786A (en) Thin film transistor array substrate and electronic ink display device
TW200619790A (en) Thin film transistor array panel
TW200611440A (en) Organic thin film transistor array panel and manufacturing method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees