TW200719081A - Photolithography scattering bar and method - Google Patents

Photolithography scattering bar and method

Info

Publication number
TW200719081A
TW200719081A TW095135270A TW95135270A TW200719081A TW 200719081 A TW200719081 A TW 200719081A TW 095135270 A TW095135270 A TW 095135270A TW 95135270 A TW95135270 A TW 95135270A TW 200719081 A TW200719081 A TW 200719081A
Authority
TW
Taiwan
Prior art keywords
photolithography
feature
design feature
parallel
scattering bar
Prior art date
Application number
TW095135270A
Other languages
English (en)
Other versions
TWI293719B (en
Inventor
Yung-Sung Yen
Kuei-Shun Chen
Chien-Wen Lai
Cherng-Shyan Tsay
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200719081A publication Critical patent/TW200719081A/zh
Application granted granted Critical
Publication of TWI293719B publication Critical patent/TWI293719B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
TW095135270A 2005-11-14 2006-09-22 Photolithography scattering bar and method TWI293719B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/273,140 US20070111109A1 (en) 2005-11-14 2005-11-14 Photolithography scattering bar structure and method

Publications (2)

Publication Number Publication Date
TW200719081A true TW200719081A (en) 2007-05-16
TWI293719B TWI293719B (en) 2008-02-21

Family

ID=38041249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135270A TWI293719B (en) 2005-11-14 2006-09-22 Photolithography scattering bar and method

Country Status (3)

Country Link
US (1) US20070111109A1 (zh)
CN (1) CN1959528A (zh)
TW (1) TWI293719B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
CN104749896B (zh) * 2013-12-27 2016-10-05 中芯国际集成电路制造(上海)有限公司 光学邻近修正方法
CN105226007B (zh) * 2014-06-13 2018-10-16 中芯国际集成电路制造(上海)有限公司 金属互连结构的制作方法
JP7117242B2 (ja) * 2016-01-11 2022-08-12 ケーエルエー コーポレイション ホットスポット及び処理窓監視
TW201831985A (zh) * 2017-02-18 2018-09-01 力晶科技股份有限公司 30078 新竹科學工業園區力行一路12號 光罩及其製造方法
US11099478B2 (en) * 2018-08-14 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask having recessed region
CN109116675A (zh) * 2018-08-15 2019-01-01 上海华力集成电路制造有限公司 提高热点工艺窗口的opc修正方法
CN113970875A (zh) * 2020-07-22 2022-01-25 泉芯集成电路制造(济南)有限公司 一种光掩模及其制作方法
CN114660889B (zh) * 2022-02-28 2026-02-03 上海华力集成电路制造有限公司 Opc修正中添加散射条的方法
CN119620526A (zh) * 2024-12-23 2025-03-14 重庆芯联微电子有限公司 一种辅助图形添加方法、系统及终端

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
TW447082B (en) * 2000-09-07 2001-07-21 United Microelectronics Corp Method for increasing the line width window in a semiconductor process
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
DE60202230T2 (de) * 2001-03-14 2005-12-15 Asml Masktools B.V. Naheffektkorrektur mittels nicht aufgelöster Hilfsstrukturen in Form von Leiterstäben
KR100498441B1 (ko) * 2001-04-17 2005-07-01 삼성전자주식회사 광근접 효과의 보정을 위한 마스크와 그 제조 방법
DE10143723B4 (de) * 2001-08-31 2006-09-28 Infineon Technologies Ag Verfahren zur Optimierung eines Layouts für eine Maske zur Verwendung bei der Halbleiterherstellung
US6787272B2 (en) * 2002-03-01 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Assist feature for random, isolated, semi-dense, and other non-dense contacts
KR100472412B1 (ko) * 2002-08-02 2005-03-10 삼성전자주식회사 반도체 장치의 패턴 형성방법 및 이에 사용되는 포토 마스크
US6983444B2 (en) * 2003-08-01 2006-01-03 Macronix International Co., Ltd. Mask for reducing proximity effect
US7087350B2 (en) * 2003-11-24 2006-08-08 Taiwan Semiconductor Manufacturing Co. Ltd. Method for combining via patterns into a single mask
US20050205961A1 (en) * 2004-03-22 2005-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Model-based insertion of irregular dummy features

Also Published As

Publication number Publication date
TWI293719B (en) 2008-02-21
CN1959528A (zh) 2007-05-09
US20070111109A1 (en) 2007-05-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees